JP2767517B2 - Power semiconductor module - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module, and more particularly to an improvement in conductive terminals formed on upper and lower surfaces of a power semiconductor chip mounted on a substrate.

[0002]

2. Description of the Related Art Conventionally, as this type of power semiconductor module, for example, a power semiconductor module having a structure shown in FIG. 3 is known.
That is, a metal substrate 21 made of iron, aluminum, copper, or the like.
Ceramic insulating layers 22 and 23 of alumina, aluminum nitride or the like are formed on the upper surface by soldering, and conductive terminals 24 and 25 are formed on the ceramic insulating layers 22 and 23 by soldering. And this conductive terminal 2
Power semiconductor chips 26 and 27 are soldered on 4 and 25, respectively. The power semiconductor chips 26, 2
The conductive terminals 28 and 29 are soldered to the upper part of the chip 7. The conductive terminals 28 formed on one power semiconductor chip 26 and the conductive terminals 25 formed on the other ceramic insulating layer 23 have their tips 28a and 25b.
Are soldered together. Thereafter, the case frame 31 is placed around the substrate 21, and silicone rubber is injected into the case and cured to cure the silicone rubber layer 3.
2 is formed, and an epoxy resin is further injected thereon and cured to form an epoxy resin layer 33. Then, a cover 34 is put on the epoxy resin layer 33, the conductive terminals 24, 25, and 29 are inserted into holes formed in the cover in advance, and the tip is pulled out to the upper surface of the cover, bent, and a nut embedded in the cover is inserted. (Not shown) and external connection terminals 24a, 25
a, 29a. Reference numerals 35 and 36 are mounting holes for mounting the power semiconductor module to fins or the like.

[0003]

The conventional power semiconductor module has the above-described structure, and has one conductive terminal 28 on the power semiconductor chip and the other conductive terminal 25 on the ceramic insulating layer. The tips must be inserted into each other and soldered, and there is a problem that workability is reduced.

[0004]

SUMMARY OF THE INVENTION The present invention has been obtained as a result of a study to solve the above-mentioned problems of the conventional power semiconductor module. That is, the present invention requires at least 2
An electric circuit is provided on an insulating layer provided on the surface of a metal substrate capable of supporting two power semiconductor chips, and first and second electric circuits having conductive terminals partially drawn out on the electric circuit.
A power semiconductor chip is mounted on the first and second conductive supports, and a third terminal having a conductive terminal on the power semiconductor chip is partially drawn out. And a fourth conductive support, and then a synthetic resin layer is formed in a case comprising the substrate and a frame surrounding the substrate, and the power semiconductor module is housed. Or one of the third and fourth conductive supports is constituted by an integral support,
An object of the present invention is to provide a power semiconductor module in which one of control terminals of a power semiconductor chip mounted on the conductive support is connected to the electric circuit.

[0005]

According to the present invention, when one power semiconductor chip is soldered to the first conductive support on the ceramic insulating layer, the control terminal together with the other main surface is directly mounted on the electric circuit on the ceramic insulating layer. Because I tried to solder,
One of the conductive terminals on the power semiconductor chip and the conductive terminal on the other ceramic insulating layer as in the conventional power semiconductor module shown in FIG. Since the operation can be omitted, the working process in assembling the power semiconductor module can be further simplified.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to FIGS. FIG. 1 is a sectional view showing an assembly structure of a power semiconductor module according to the present invention.
FIG. 2 is a plan view showing an electric circuit provided on an insulating layer on a substrate. In the figure, 1 is a metal substrate on which two power semiconductor chips are mounted, and 2 is an insulating layer formed on the metal substrate 1 and made of ceramics such as alumina or aluminum nitride. The electrically conductive circuits 3, 4, and 5 are formed on the insulating layer 2 as shown in FIG. Reference numeral 6 denotes a first conductive support soldered to the electric circuit 3 on the insulating layer 2, and reference numeral 7 denotes a second conductive support soldered to the electric circuit 4 on the insulating layer 2. One end edge extends upright to form a conductive terminal 7a.

Reference numeral 8 denotes a support connecting the first conductive support 6 and the second conductive support 7. The support 8 may be integrally formed with the first conductive support 6 and the second conductive support 7. Reference numeral 9 denotes a conductive control terminal support which is soldered on the electric circuit 5 on the insulating layer 2, and one end of the support extends upright to form a control terminal 9a. Power semiconductor chips 10 and 11 are mounted on the first conductive support 6 and the second conductive support 7, respectively, by soldering directly or via a thermal buffer such as Mo or W. .

Although not shown, the power semiconductor chip 10 has a control terminal, which is soldered to the control terminal support 9. Numerals 12 and 13 denote third and fourth conductive supports respectively attached to the main surfaces of the power semiconductor chips 10 and 11 by soldering directly or via a heat buffer such as Mo or W, respectively. On the other hand, the edge portion extends upright and the conductive terminal 12a,
13a.

Reference numeral 14 denotes a conductive control terminal support soldered to the control terminal of the power semiconductor chip 11,
On the other hand, the edge portion extends upright to form a conductive terminal 14a.

After assembling the members as described above,
A frame is provided around the substrate, and after sealing with resin, a lid is put on the upper part. At this time, each terminal extending upward is pulled out from each hole of the lid to the outside, and as shown in FIG. The power semiconductor module is obtained by folding the upper surface.

The power semiconductor module according to the present invention has the above-mentioned structure, and when the power semiconductor chip is attached to the electric circuit on the insulating layer by soldering, the control terminal is connected to one main surface together with the electric circuit. Therefore, workability in the assembling process can be further simplified.

In the above embodiment, the first on the electric circuit 3
The state in which the conductive support and the second conductive support on the electric circuit 4 are separated from each other and are connected to each other by 8 supports is shown. The two conductive supports may be composed of one support. In the above embodiment, the power semiconductor chip 11 also has a control terminal.
A power semiconductor chip without a control terminal such as a diode may be used. Furthermore, all the control terminals may be soldered to a control terminal support soldered to the electric circuit so that the obtained power semiconductor module can be applied to a three-phase half-wave rectifier circuit. Although FIG. 1 shows an example in which two power semiconductor chips are mounted, three power semiconductor chips can be used, and six power semiconductor chips can be used for a six-phase half-wave rectifier circuit.

[0013]

As described above, according to the power semiconductor module of the present invention, when the power semiconductor chip is soldered to the conductive support attached to the electric circuit on the insulating layer provided on the metal substrate, the control is performed. By attaching the terminal support to the electric circuit on the insulating layer by direct soldering at the same time, the tip of one conductive terminal on the conventional power semiconductor chip and the tip of the conductive terminal on the other insulating layer are This can eliminate the troublesome operation of inserting and soldering the components into each other, and has a great effect that the working process in assembling the power semiconductor module can be further simplified.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an assembly structure of a power semiconductor module of the present invention.

FIG. 2 is a plan view showing an electric circuit provided on an insulating layer of a metal substrate in the power semiconductor module of the present invention.

FIG. 3 is a sectional view showing the structure of a conventional power semiconductor module.

[Explanation of symbols]

 Reference Signs List 1 metal substrate 2 ceramic insulating layer 3 electric circuit 4 electric circuit 5 electric circuit 6 first conductive support 7 second conductive support 9 control terminal support 10 power semiconductor chip 11 power semiconductor chip 12 third conductivity Support 13 Fourth conductive support 14 Conductive control terminal support

Continuation of the front page (72) Inventor Mineyoshi Iwamoto 2-14-3 Awaji, Higashiyodogawa-ku, Osaka-shi, Osaka Inside Sansha Electric Manufacturing Co., Ltd. (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 25 / 04

Claims (1)

(57) [Claims] 1. A metal substrate capable of supporting at least two power semiconductor chips, and a first substrate provided on an insulating layer provided on a surface of the metal substrate.
A third and a third electric circuit, a first and a second conductive support provided on the first and the second electric circuits, respectively, and at least one of which has a conductive terminal partially drawn out to the outside; At least two power semiconductor chips respectively mounted on the first and second conductive supports, and third and third power terminals respectively provided on the power semiconductor chips and having conductive terminals partially drawn out. A fourth conductive support, and a support for electrically connecting the first and second conductive supports, further comprising one of the two power semiconductor chips.
A power semiconductor module having one control terminal connected to a third electric circuit.