JPH05335480A - Power supply semiconductor module - Google Patents
Power supply semiconductor moduleInfo
- Publication number
- JPH05335480A JPH05335480A JP17026092A JP17026092A JPH05335480A JP H05335480 A JPH05335480 A JP H05335480A JP 17026092 A JP17026092 A JP 17026092A JP 17026092 A JP17026092 A JP 17026092A JP H05335480 A JPH05335480 A JP H05335480A
- Authority
- JP
- Japan
- Prior art keywords
- conductive
- power semiconductor
- electric circuit
- semiconductor module
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は電力用半導体モジュー
ルに係り、基板上に搭載される電力用半導体チップの
上、下面に形成される導電端子の改良に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module, and more particularly to improvement of conductive terminals formed on the upper and lower surfaces of a power semiconductor chip mounted on a substrate.
【０００２】[0002]
【従来の技術】従来、この種の電力用半導体モジュール
としては例えば図３に示す構造のものが知られている。
即ち、鉄、アルミニウム、銅などからなる金属基板２１
の上面にアルミナ、窒化アルミニウムなどのセラミック
ス絶縁層２２、２３を半田接着により形成し、このセラ
ミックス絶縁層２２、２３上に導電端子２４、２５が半
田付けにより形成されている。そして、この導電端子２
４、２５上には電力用半導体チップ２６、２７が半田付
けされている。また、この電力用半導体チップ２６、２
７の上部には導電端子２８、２９が半田付けされてい
る。なお、一方の電力用半導体チップ２６上に形成した
導電端子２８と、他方のセラミックス絶縁層２３上に形
成した導電端子２５とは、それらの先端２８ａと２５ｂ
を相互に嵌挿したうえ半田付けされている。その後、基
板２１の周囲にケース枠体３１を載置し、ケース内にシ
リコーンゴムを注入し、硬化させてシリコーンゴム層３
２を形成し、さらにその上にエポキシ樹脂を注入し、硬
化させてエポキシ樹脂層３３を形成する。そしてエポキ
シ樹脂層３３の上に蓋３４を被せ、予め蓋に形成してあ
る孔に導電端子２４、２５、２９を挿通してその先端を
蓋の上面に引き出して折り曲げ、蓋に埋め込まれたナッ
ト（図示せず）とともに外部接続用端子２４ａ、２５
ａ、２９ａとして使用される。なお、３５、３６は、こ
の電力用半導体モジュールをフィンなどに取り付けるた
めの取付孔である。2. Description of the Related Art Conventionally, as this type of power semiconductor module, for example, one having a structure shown in FIG. 3 has been known.
That is, the metal substrate 21 made of iron, aluminum, copper or the like
Ceramics insulating layers 22 and 23 made of alumina, aluminum nitride or the like are formed on the upper surface by solder bonding, and conductive terminals 24 and 25 are formed on the ceramic insulating layers 22 and 23 by soldering. And this conductive terminal 2
Power semiconductor chips 26 and 27 are soldered on the wirings 4 and 25. In addition, the power semiconductor chips 26, 2
Conductive terminals 28 and 29 are soldered to the upper portion of 7. The conductive terminals 28 formed on the one power semiconductor chip 26 and the conductive terminals 25 formed on the other ceramic insulating layer 23 have their tips 28a and 25b.
Are mutually inserted and soldered. Then, the case frame 31 is placed around the substrate 21, and silicone rubber is injected into the case and cured to cure the silicone rubber layer 3
2 is formed, an epoxy resin is further injected thereon, and cured to form an epoxy resin layer 33. Then, the epoxy resin layer 33 is covered with the lid 34, the conductive terminals 24, 25 and 29 are inserted into the holes formed in the lid in advance, and the tips thereof are pulled out to the upper surface of the lid and bent, and the nut embedded in the lid. External connection terminals 24a, 25 together with (not shown)
a, 29a. Reference numerals 35 and 36 are mounting holes for mounting the power semiconductor module on a fin or the like.
【０００３】[0003]
【発明が解決しようとする課題】従来の電力用半導体モ
ジュールは、上記したような構造であり、電力用半導体
チップ上の一方の導電端子２８とセラミックス絶縁層上
の他方の導電端子２５の夫々の先端は相互に挿入して半
田付けを行わねばならず、作業性が低下するという問題
があった。The conventional power semiconductor module has the structure as described above, and each of the one conductive terminal 28 on the power semiconductor chip and the other conductive terminal 25 on the ceramic insulating layer is provided. The tips have to be inserted into each other for soldering, which causes a problem that workability is deteriorated.
【０００４】[0004]
【課題を解決するための手段】この発明は上記した従来
の電力用半導体モジュールの問題点を解決すべく検討の
結果得られたものである。即ち、この発明は少くとも２
つの電力用半導体チップを支持し得る金属基板表面に設
けた絶縁層上に電気回路を設け、この電気回路上に一部
が外部に引き出される導電端子を有する第１および第２
の導電性支持体を形成し、この第１および第２の導電性
支持体上に電力用半導体チップを搭載し、該電力用半導
体チップ上に一部が外部に引き出される導電端子を有す
る第３および第４の導電性支持体を形成し、次いで上記
基板と基板周囲の枠体とよりなるケース内に合成樹脂層
を形成してハウジングした電力用半導体モジュールであ
って、上記第１と第２の導電性支持体、または第３と第
４の導電性支持体の何れかが一体の支持体で構成され、
上記導電性支持体上に搭載した電力用半導体チップの制
御端子の一つが前記電気回路に接続してなる電力用半導
体モジュールを提供するものである。The present invention has been obtained as a result of studies for solving the problems of the conventional power semiconductor module described above. That is, this invention is at least 2
An electric circuit is provided on an insulating layer provided on the surface of a metal substrate capable of supporting two power semiconductor chips, and first and second electrically conductive terminals, a part of which is drawn out to the outside, on the electric circuit.
A conductive support body is formed, a power semiconductor chip is mounted on the first and second conductive support bodies, and a conductive terminal is provided on the power semiconductor chip, a part of which is pulled out to the outside. And a fourth conductive support, and then a synthetic resin layer is formed in a case made up of the substrate and a frame surrounding the substrate to form a housing, and the power semiconductor module comprises the first and second Or a third conductive support or a fourth conductive support is formed of an integral support,
The present invention provides a power semiconductor module in which one of the control terminals of a power semiconductor chip mounted on the conductive support is connected to the electric circuit.
【０００５】[0005]
【作用】この発明は、一方の電力用半導体チップをセラ
ミックス絶縁層上の第１導電性支持体に半田付けする際
に、他方の主表面とともに制御端子をセラミックス絶縁
層上の電気回路上に直接半田付けするようにしたので、
従来の図３に示す電力用半導体モジュールにおけるよう
な電力用半導体チップ上の一方の導電端子と他方のセラ
ミックス絶縁層上の導電端子とをそれらの先端を相互に
挿入して半田付けするという面倒な操作を省略すること
ができるので、電力用半導体モジュール組立てにおける
作業工程をより簡素化することができるのである。According to the present invention, when one of the power semiconductor chips is soldered to the first conductive support on the ceramic insulating layer, the control terminal together with the other main surface is directly placed on the electric circuit on the ceramic insulating layer. I decided to solder it,
It is troublesome to insert one conductive terminal on the power semiconductor chip and the other conductive terminal on the other ceramic insulating layer by inserting their tips into each other and soldering them together. Since the operation can be omitted, the work process in assembling the power semiconductor module can be further simplified.
【０００６】[0006]
【実施例】以下、この発明をその一実施例を示す図１お
よび図２を参照して説明する。図１はこの発明になる電
力用半導体モジュールの組立構造を示す断面図であり、
図２は基板上の絶縁層に設けた電気回路を示す平面図で
ある。図において、１は２つの電力用半導体チップを搭
載する金属基板、２はこの金属基板１上に形成したアル
ミナまたは窒化アルミニウムなどのセラミックスからな
る絶縁層である。そしてこの絶縁層２には図２に示すよ
うに導電性電気回路３、４、５が形成されている。６は
絶縁層２上の電気回路３に半田付けされた第１導電性支
持体であり、７は絶縁層２上の電気回路４に半田付けさ
れた第２導電性支持体であって、その一方の端縁部は直
立状に延びて導電端子７ａが形成されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to FIGS. 1 and 2 showing an embodiment thereof. FIG. 1 is a sectional view showing an assembly structure of a power semiconductor module according to the present invention,
FIG. 2 is a plan view showing an electric circuit provided on the insulating layer on the substrate. In the figure, 1 is a metal substrate on which two power semiconductor chips are mounted, and 2 is an insulating layer formed on the metal substrate 1 and made of ceramics such as alumina or aluminum nitride. Conductive electric circuits 3, 4, and 5 are formed on the insulating layer 2 as shown in FIG. 6 is a first conductive support soldered to the electric circuit 3 on the insulating layer 2, and 7 is a second conductive support soldered to the electric circuit 4 on the insulating layer 2. One end edge portion extends in an upright shape to form a conductive terminal 7a.
【０００７】８は第１導電性支持体６と第２導電性支持
体７を繋ぐ支持体である。この支持体８は、第１導電性
支持体６、第２導電性支持体７と一体成型させてもよ
い。９は絶縁層２上の電気回路５上に半田付けされてい
る導電性の制御端子支持体であり、その一方の端縁部は
上方に直立状に伸びて制御端子９ａを形成している。ま
た、第１導電性支持体６および第２導電性支持体７の上
部には夫々電力用半導体チップ１０、１１が直接または
Ｍｏ、Ｗなどの熱緩衝材を介して半田付けによって搭載
されている。Reference numeral 8 is a support for connecting the first conductive support 6 and the second conductive support 7. The support 8 may be integrally molded with the first conductive support 6 and the second conductive support 7. Reference numeral 9 is a conductive control terminal support which is soldered onto the electric circuit 5 on the insulating layer 2, and one edge portion thereof extends upward in an upright state to form a control terminal 9a. Further, power semiconductor chips 10 and 11 are mounted on the first conductive support 6 and the second conductive support 7 by soldering directly or via a thermal buffer material such as Mo or W, respectively. ..
【０００８】そして、電力用半導体チップ１０には図示
されていないが、制御端子を有しており、これは制御端
子支持体９に半田付けされている。１２および１３は電
力用半導体チップ１０および１１の主表面に夫々直接ま
たはＭｏ、Ｗなどの熱緩衝材を介して半田付けによって
取り付けられた第３および第４の導電性支持体であっ
て、夫々一方端縁部は直立状に延びて導電端子１２ａ、
１３ａを形成している。Although not shown, the power semiconductor chip 10 has a control terminal, which is soldered to the control terminal support 9. Reference numerals 12 and 13 denote third and fourth conductive supports attached to the main surfaces of the power semiconductor chips 10 and 11 directly or by soldering via a thermal buffering material such as Mo or W, respectively. On the other hand, the edge portion extends in an upright shape and extends to the conductive terminal 12a,
13a is formed.
【０００９】１４は、電力用半導体チップ１１の制御端
子に半田付けされた導電性の制御端子支持体であって、
一方端縁部は直立状に延びて導電端子１４ａを形成して
いる。Reference numeral 14 is a conductive control terminal support body soldered to the control terminal of the power semiconductor chip 11,
On the other hand, the edge portion extends upright to form the conductive terminal 14a.
【００１０】以上のようにして各部材を組立てた後は、
基板の周囲に枠体を設け、樹脂封止を行ったのち上部に
蓋体を被せ、その際に上部に延びている各端子を蓋体の
各孔から外部へ引出し、図３のように蓋上面に折り曲げ
ることによって電力用半導体モジュールが得られる。After assembling each member as described above,
A frame is provided around the board, and after sealing with resin, a lid is placed on the top. At that time, each terminal extending to the top is pulled out from each hole of the lid to the outside as shown in FIG. A power semiconductor module is obtained by bending the upper surface.
【００１１】この発明の電力用半導体モジュールは、上
記のような構造であり、電力用半導体チップを絶縁層上
の電気回路に半田にて取り付ける際に、一方の主表面と
ともに制御端子を夫々電気回路に半田付けすることがで
きるので、組立工程における作業性を一段と簡略化する
ことができるのである。The power semiconductor module of the present invention has the above-mentioned structure, and when the power semiconductor chip is attached to the electric circuit on the insulating layer by soldering, the control terminals are provided together with one main surface on the electric circuit. Since it can be soldered to, the workability in the assembly process can be further simplified.
【００１２】なお、上記実施例では電気回路３上の第１
導電性支持体と電気回路４上の第２導電性支持体とが分
離していて、それらの間を８の支持体で繋いだ状態を示
しているが、この第１導電性支持体と第２導電性支持体
を一枚の支持体で構成してもよい。また、上記実施例で
は電力用半導体チップ１１も制御端子を有しているが、
ダイオードのように制御端子のない電力用半導体チップ
を用いてもよい。さらに、得られる電力用半導体モジュ
ールを３相半波整流回路に適用できるよう制御端子をす
べて電気回路に半田付けされた制御端子支持体に半田付
けするようにしてもよい。また、図１では電力用半導体
チップを２個搭載した例を示したが、これを３個とする
こともでき、さらに６相半波整流回路用として６個とす
ることもできる。In the above embodiment, the first circuit on the electric circuit 3 is used.
Although the conductive support and the second conductive support on the electric circuit 4 are separated and are shown to be connected to each other by the support 8, the first conductive support and the first conductive support are separated from each other. The two conductive supports may be composed of one support. Further, although the power semiconductor chip 11 also has a control terminal in the above embodiment,
A power semiconductor chip without a control terminal such as a diode may be used. Further, all the control terminals may be soldered to the control terminal support body soldered to the electric circuit so that the obtained power semiconductor module can be applied to the three-phase half-wave rectifier circuit. Although FIG. 1 shows an example in which two power semiconductor chips are mounted, the number of power semiconductor chips may be three, or six for a six-phase half-wave rectifier circuit.
【００１３】[0013]
【発明の効果】以上説明したように、この発明の電力用
半導体モジュールは、金属基板に設けた絶縁層上の電気
回路に取り付けた導電性支持体に電力用半導体チップを
半田付けする時に、制御端子支持体を絶縁層上の電気回
路に同時に直接半田付けにて取り付けるようにしたこと
によって、従来の電力用半導体チップ上の一方の導電端
子の先端と他方の絶縁層上の導電端子の先端とを相互に
挿入して半田付けするような面倒な操作を省略すること
ができ、電力用半導体モジュール組立てにおける作業工
程を一段と簡略化できるという大きな効果を奏するので
ある。As described above, according to the power semiconductor module of the present invention, when the power semiconductor chip is soldered to the conductive support attached to the electric circuit on the insulating layer provided on the metal substrate, the control is performed. By attaching the terminal support to the electric circuit on the insulating layer by direct soldering at the same time, the tip of one conductive terminal on the conventional power semiconductor chip and the tip of the conductive terminal on the other insulating layer It is possible to omit the troublesome operation of inserting and soldering each other, and it is possible to further simplify the work process in assembling the power semiconductor module, which is a great effect.
【図１】この発明の電力用半導体モジュールの組立構造
を示す斜視図である。FIG. 1 is a perspective view showing an assembly structure of a power semiconductor module of the present invention.
【図２】この発明の電力用半導体モジュールにおける金
属基板の絶縁層上に設けた電気回路を示す平面図であ
る。FIG. 2 is a plan view showing an electric circuit provided on an insulating layer of a metal substrate in the power semiconductor module of the present invention.
【図３】従来の電力用半導体モジュールの構造を示す断
面図である。FIG. 3 is a sectional view showing a structure of a conventional power semiconductor module.
１ 金属基板 ２ セラミックス絶縁層 ３ 電気回路 ４ 電気回路 ５ 電気回路 ６ 第１導電性支持体 ７ 第２導電性支持体 ９ 制御端子支持体 １０ 電力用半導体チップ １１ 電力用半導体チップ １２ 第３導電性支持体 １３ 第４導電性支持体 １４ 導電性制御端子支持体 1 Metal Substrate 2 Ceramics Insulation Layer 3 Electric Circuit 4 Electric Circuit 5 Electric Circuit 6 First Conductive Support 7 Second Conductive Support 9 Control Terminal Support 10 Power Semiconductor Chip 11 Power Semiconductor Chip 12 Third Conductivity Support 13 Fourth conductive support 14 Conductive control terminal support
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岩本 峰吉 大阪府大阪市東淀川区淡路２丁目14番３号 株式会社三社電機製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mineyoshi Iwamoto 2-14-3 Awaji, Higashiyodogawa-ku, Osaka City, Osaka Prefecture Sansha Electric Co., Ltd.
Claims (1)
支持し得る金属基板表面に設けた絶縁層上に電気回路を
設け、この電気回路上に一部が外部に引き出される導電
端子を有する第１および第２の導電性支持体を形成し、
この第１および第２の導電性支持体上に電力用半導体チ
ップを搭載し、該電力用半導体チップ上に一部が外部に
引き出される導電端子を有する第３および第４の導電性
支持体を形成し、次いで上記基板と基板周囲の枠体とよ
りなるケース内に合成樹脂層を形成してハウジングした
電力用半導体モジュールであって、上記第１と第２の導
電性支持体、または第３と第４の導電性支持体の何れか
が一体の支持体で構成され、上記導電性支持体上に搭載
した電力用半導体チップの制御端子の一つが前記電気回
路に接続してなる電力用半導体モジュール。1. An electric circuit is provided on an insulating layer provided on a surface of a metal substrate capable of supporting at least two power semiconductor chips, and a first and a part of the electric circuit are provided with conductive terminals which are drawn out to the outside. Forming a second conductive support,
Power semiconductor chips are mounted on the first and second conductive supports, and third and fourth conductive supports are provided on the power semiconductor chips, each of which has a conductive terminal. A semiconductor module for electric power, which is formed and then formed by housing a synthetic resin layer in a case composed of the substrate and a frame surrounding the substrate, wherein the first and second conductive supports or the third conductive support are provided. And a fourth conductive support body are integrally formed as a support body, and one of the control terminals of the power semiconductor chip mounted on the conductive support body is connected to the electric circuit. module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4170260A JP2767517B2 (en) | 1992-06-03 | 1992-06-03 | Power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4170260A JP2767517B2 (en) | 1992-06-03 | 1992-06-03 | Power semiconductor module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05335480A true JPH05335480A (en) | 1993-12-17 |
| JP2767517B2 JP2767517B2 (en) | 1998-06-18 |
Family
ID=15901647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4170260A Expired - Fee Related JP2767517B2 (en) | 1992-06-03 | 1992-06-03 | Power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2767517B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365965B1 (en) | 1998-11-26 | 2002-04-02 | Samsung Electronics Co., Ltd. | Power semiconductor module with terminals having holes for better adhesion |
| US20140218871A1 (en) * | 2013-02-07 | 2014-08-07 | Samsung Electronics Co., Ltd. | Substrate and terminals for power module and power module including the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616849A (en) * | 1984-06-01 | 1986-01-13 | ブラウン・ボバリ・ウント・シー・アクチエンゲゼルシヤフト | Method of producing power semiconductor module |
-
1992
- 1992-06-03 JP JP4170260A patent/JP2767517B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616849A (en) * | 1984-06-01 | 1986-01-13 | ブラウン・ボバリ・ウント・シー・アクチエンゲゼルシヤフト | Method of producing power semiconductor module |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365965B1 (en) | 1998-11-26 | 2002-04-02 | Samsung Electronics Co., Ltd. | Power semiconductor module with terminals having holes for better adhesion |
| KR100343150B1 (en) * | 1998-11-26 | 2002-10-25 | 페어차일드코리아반도체 주식회사 | Power semiconductor module with metal terminal, metal terminal manufacturing method of power semiconductor module, and power semiconductor module manufacturing method |
| US20140218871A1 (en) * | 2013-02-07 | 2014-08-07 | Samsung Electronics Co., Ltd. | Substrate and terminals for power module and power module including the same |
| US9853378B2 (en) * | 2013-02-07 | 2017-12-26 | Samsung Electronics Co., Ltd. | Substrate and terminals for power module and power module including the same |
| US10193250B2 (en) | 2013-02-07 | 2019-01-29 | Samsung Electronics Co., Ltd. | Substrate and terminals for power module and power module including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2767517B2 (en) | 1998-06-18 |
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