JP3371631B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a conductive portion composed of a polysilicon film formed on a semiconductor substrate via an insulating film and a metal film or a metal compound film formed on the polysilicon film. The present invention also relates to a manufacturing method thereof, and more particularly to a MOS field effect transistor (MOSFET), a semiconductor device suitable for manufacturing the same, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor device of this type, N
Composed of both channel MOSFET (NMOSFET) and P-channel MOSFET (PMOSFET)
Complementary MOS transistors (CMOS) are known. Since CMOS has the characteristics of low power consumption and high speed, it is widely used as many LSI constituent devices including memory logic. Also these MO
The gate length of SFET is becoming finer and finer with the high integration of LSI. Currently, the gate length is 0.1μ.
Room temperature operation of MOSFETs of m or less has also been confirmed.

By the way, conventionally, the gate electrode of the PMOSFET has a simple process, and since it is a buried channel type, it has a high performance.
The N ⁺ type was used as well. However, it is difficult to suppress the short channel effect in the buried channel type after the deep submicron generation, and therefore the PMOS
It is considered effective to use a P ⁺ type which is a surface channel type for the gate electrode of the FET.

In order to manufacture a CMOS in which the gate electrode of the NMOSFET is of the N ⁺ type and the gate electrode of the PMOSFET is of the P ⁺ type, that is, CMOS of different conductivity type gate electrodes on the same semiconductor substrate, An N-type impurity such as arsenic (As) or phosphorus (P) is ion-implanted into an N ⁺ -type portion of a film for forming an electrode, for example, a Poly-Si film,
Boron parts having the P ⁺ -type (B) or boron difluoride (B
Usually, ion implantation is performed separately, such as ion implantation of P-type impurities such as F ₂ ).

Further, for example, the gate electrode, tungsten silicide (WSi _X), which is formed with silicon (Si) of polysilicon formed on the substrate 50 on (Poly-Si) film 53 to the upper layer as shown in FIG. 3 film W- consisting of 54
In the case of a polycide structure, conventionally, the ion implantation is performed after the WSi _X film 54 is formed. In this case, NM
The Poly-Si film 53 in the OSFET formation planned region 55 is heavily doped with an N-type impurity (for example, phosphorus), and P
P is formed on the Poly-Si film 53 in the MOSFET formation region 56.
Highly doped with a type impurity (for example, boron).
Then, after that, the doped phosphorus and boron are removed by high-temperature heat treatment such as annealing for activating impurities in the source region and the drain region (hereinafter, referred to as source / drain regions) (not shown) formed on the Si substrate 50. It is diffused in the Poly-Si film 53 in each region 55, 56.

It should be noted that the Si substrate 50 shown in FIG.
A field oxide film 51 is formed so as to surround each of the NMOSFET formation planned region 55 and the PMOSFET formation planned region 56, and the S of each of the regions 55 and 56 is formed.
A gate oxide film 52 is formed on the surface of the i substrate 50.

[0007]

However, in the conventional method of manufacturing a semiconductor device, the gate electrode is made of Poly-Si.
When a structure (polycide structure) in which a film and a metal silicide film such as WSi _X are laminated or a structure in which a Poly-Si film and a metal film are laminated is used, N-type or P-type in the metal film or the metal silicide film is used. Since the diffusion rate of impurities is much faster than that in Si or silicon oxide (SiO ₂ ) (diffusion coefficient is about 4 orders of magnitude higher), it is distributed at high concentration in the Poly-Si film by high temperature heat treatment after ion implantation. The N-type and P-type impurities that are present are mutually diffused.

For example, in the case of FIG. 3 in which the gate electrode has a W-polycide structure, N-type phosphorus is sucked up from the Poly-Si film 53 to the WSi _X film 54, and further, the WSi _X film 54.
Is diffused in the direction of arrow A in FIG. 3 toward the Poly-Si film 53 side where the P-type gate electrode is formed. At the same time, the diffusion P-type boron from Poly-Si film 53 is sucked to the WSi _X film 54, further WSi _X film 54 in FIG. 3 in the direction of arrow B toward the Poly-Si53 side of the gate electrode forming part of the N-type To do. As a result, the phosphorus and boron doped in the Poly-Si film 53 compensate each other. When this phenomenon occurs, the Poly-Si film 53 of the gate electrode
Since the impurity concentration in the inside of the poly-Si film 53 is reduced,
Fermi level fluctuates or the gate electrode is depleted when the gate voltage is applied, which causes a change in the threshold voltage (Threshold Voltage; Vth),
The device characteristics of the OSFET are degraded.

When the gate electrode has a W-polycide structure, high temperature heat treatment performed after forming the gate electrode
Impurities such as phosphorus and boron doped in the Poly-Si film 53 are precipitated in the crystal grain boundaries of the Poly-Si film 53 and in the WSi _X film 54, and as a result, the impurity concentration in the Poly-Si film 53 decreases. However, in the obtained gate structure, the gate electrode is depleted when a gate voltage is applied. Furthermore W
If the Si _x film 54 is formed by CVD using a source gas containing fluorine, the formed WS
The i _X film 54 contains fluorine. Therefore, in the W-polycide structure including such a WSi _X film 54, the boron doped in the Poly-Si film 53 by the accelerated diffusion due to the influence of fluorine is converted into the gate oxide film 52.
Penetrates the Si substrate 50 and diffuses
There is also a problem that the FET characteristics deteriorate.

In order to prevent the impurities diffused in the WSi _X film from diffusing into the Poly-Si film in different conductivity type regions, a diffusion stopper layer is provided at the interface between the WSi _X film and the Poly-Si film. It is effective to provide them. For example, it has been reported that by using a poly-Si film having a large grain size as a diffusion stopper layer, the fluctuation of the threshold voltage due to the mutual diffusion of impurities can be suppressed (“Gojo, et al., IEICE Tech. SDM93”). -148 "). That is, since the grain size is large, the Poly-Si film having few crystal grain boundaries is replaced with the WSi _X film and the Poly-Si film.
By providing it at the interface with the film, it is intended to suppress the grain boundary diffusion of impurities and to suppress the diffusion of impurities into the underlying Poly-Si film.

However, in practice, even when a large grain size Poly-Si film is used as the diffusion stopper layer, it is difficult to sufficiently suppress the impurity diffusion at the crystal grain boundaries, and therefore it is difficult to suppress the impurity diffusion at the crystal grain boundaries. There is a strong demand for the development of a diffusion stopper layer that can sufficiently suppress the impurity diffusion of the above and has a high effect of suppressing the impurity diffusion into the underlying Poly-Si film. The present invention has been made to solve the above problems, and is a conductive film formed of a polysilicon film formed on a semiconductor substrate via an insulating film and a metal film or a metal compound film formed on the polysilicon film. It is an object of the present invention to provide a semiconductor device having parts and a method of manufacturing the same, in which mutual diffusion of impurities having different conductivity types, penetration of boron, and the like can be suppressed, and which has good device characteristics.

[0012]

According to a first aspect of the present invention, there is provided a semiconductor device, wherein a polysilicon film formed on a semiconductor substrate with an insulating film interposed therebetween is a first polysilicon film formed on the insulating film. A second polysilicon film formed on the upper layer, the second polysilicon film having a crystal grain size larger than that of the first polysilicon film, and
The solution of the above problems is to contain nitrogen at a concentration of 1 × 10 ¹⁹ cm ⁻³ or more and 1 × 10 ²¹ cm ⁻³ or less .

According to the present invention, since the second polysilicon film has a large crystal grain size and therefore a small number of crystal grain boundaries, when a heat treatment is performed when manufacturing this semiconductor device,
Impurities can be suppressed from diffusing at the crystal grain boundaries and precipitating at the crystal grain boundaries. It is also reported that nitrogen has the effect of reducing the diffusion rate of impurities that diffuse at grain boundaries,
In the above-mentioned invention, since the second polysilicon film contains nitrogen having such an action, this also suppresses the crystal grain boundary diffusion and precipitation of impurities during the heat treatment. Therefore, according to the semiconductor device of the present invention, even if the metal film or the metal compound film formed on the second polysilicon film contains fluorine, the fluorine is diffused into the polysilicon film during the heat treatment during the manufacturing process. Since boron is introduced into the polysilicon film and the insulating film is the gate oxide film, penetration of boron into the gate oxide film due to accelerated diffusion of fluorine was prevented. Will be things.

According to a third aspect of the present invention, in the above invention, the second polysilicon film contains phosphorus in place of nitrogen contained in the second polysilicon film. Also in this invention, since the second polysilicon film has a large crystal grain size and thus has few crystal grain boundaries, the same effect as that of the above-described invention can be obtained. Further, it has been reported that when the polysilicon film contains phosphorus, the diffusion of fluorine at the crystal grain boundaries of the polysilicon film is suppressed (“JCHsieh, et.al. IEEE Electron Dev. Lett.
Vol.14, No.5 p.222 (1993) "). Therefore, since the second polysilicon film contains phosphorus having such an action, even if the metal film or the metal compound film contains fluorine, the fluorine diffuses into the polysilicon film at the grain boundaries during the heat treatment. Since boron is introduced into the polysilicon film and the insulating film is a gate oxide film,
The penetration of boron into the gate oxide film is prevented.

In the above two inventions, for example, the semiconductor device includes a first semiconductor element and a second semiconductor element, and the conductive portion is the first conductive portion of the first semiconductor element. , And the second conductive portion of the second semiconductor element having a different conductivity type from the first conductive portion, the first conductive portion and the second conductive portion of the second conductive portion may be respectively subjected to heat treatment during manufacturing of the semiconductor device. The 2 polysilicon film suppresses the diffusion of the impurities diffused in the metal film or the metal compound film into the polysilicon film of the conductive portion having the different conductivity type.
Therefore, mutual diffusion of impurities of different conductivity types is suppressed, and the first and second conductive portions in which the impurity concentration in the polysilicon film is maintained at a high concentration can be obtained.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a polysilicon film composed of a first film and a second film is formed on a semiconductor substrate via an insulating film, and a metal film or a metal compound film is formed on the polysilicon film. When forming the conductive portion, first, in the first step, a first polysilicon film and an amorphous silicon film are formed in this order on the insulating film. Second then
Nitrogen or phosphorus is ion-implanted into the amorphous silicon film in the process, and the amorphous silicon film is crystallized by heat treatment in the third process to 1 × 10 ¹⁹ cm ⁻³ or more 1
Containing nitrogen or phosphorus at a concentration of × 10 ²¹ cm ^-3 or less
That forming the second polysilicon film. Then, in the fourth step, nitrogen or phosphorus in the second polysilicon film is segregated in the crystal grain boundaries of the second polysilicon film by heat treatment in the fourth step, and in the fifth step, the metal film or the metal film is formed on the second polysilicon film. Forming a metal compound film is a means for solving the above problems.

According to the present invention, after the amorphous silicon film is formed, nitrogen or phosphorus is ion-implanted into the amorphous silicon film, so that the crystallinity of the amorphous silicon film becomes more amorphous. Therefore, in the heat treatment of the third step, the amorphous silicon film is the first layer of the lower layer.
Crystallization is performed to have a grain size larger than that of the polysilicon film, and a second polysilicon film having few crystal grain boundaries can be obtained. Further, the heat treatment in the fourth step segregates nitrogen or phosphorus in the crystal grain boundaries of the second polysilicon film, so that the second polysilicon film in which the diffusion of impurities in its own crystal grain boundaries is suppressed is formed.

Further, in the method of manufacturing a semiconductor device according to the sixth aspect, after performing the same step as the first step of the above-mentioned method of the present invention, the amorphous silicon film is crystallized by the heat treatment in the second step and the second poly is formed. A silicon film is formed. Then, in the third step, the second polysilicon film is exposed to 1 × 10 ¹⁹ cm ^−3.
Nitrogen or phosphorus is introduced so that the concentration is 1 × 10 ²¹ cm ⁻³ or less, and heat treatment is performed in the fourth step to remove nitrogen or phosphorus in the second polysilicon film from the crystal grains of the second polysilicon film. Segregate in the field. Then, performing the same process as the fifth process of the above-mentioned invention method is the means for solving the above-mentioned problems.

According to this invention, since the amorphous silicon film is crystallized by the heat treatment in the second step,
A second polysilicon film composed of crystals having a grain size larger than that of the lower first polysilicon film and having few crystal grain boundaries can be obtained. Further, since the nitrogen or phosphorus is segregated in the crystal grain boundaries of the second polysilicon film by the heat treatment in the fourth step, the second polysilicon film in which the impurity diffusion in its own crystal grain boundaries is suppressed is formed as in the above invention. It

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a semiconductor device and a method of manufacturing the same according to the present invention will be described below. FIG. 1 is a diagram for explaining a first embodiment of the method of the present invention. The method of the present invention is applied to an NMOSFET (first semiconductor element) and a PMOSFE.
It is a figure which shows an example at the time of applying to manufacture of CMOS comprised with T (2nd semiconductor element). In order to form the CMOS in this embodiment, first, as shown in FIG. 1A, L is formed on the Si substrate 1 which is the semiconductor substrate of the present invention.
By the OCOS method, for example, wet oxidation at 950 ° C., N
A field oxide film 2 is formed so as to surround a MOSFET formation-scheduled region (hereinafter referred to as an NMOS formation-scheduled region) 3 and a PMOSFET formation-scheduled region (hereinafter referred to as a PMOS formation-scheduled region) 4.

Next, the Si substrate 1 in the region 3 where the NMOS is to be formed
Then, ion implantation for forming a P-well region, ion implantation for forming a buried layer for the purpose of preventing punch-through of a transistor, and ion implantation for adjusting a threshold value are performed to form an NMOS channel region 5. To do. Similarly, ion implantation for forming an N well region, ion implantation for forming a buried layer for preventing punch through of a transistor, and threshold value adjustment are performed on the Si substrate 1 in the PMOS formation planned region 4. Ion implantation,
A PMOS channel region 6 is formed. Subsequently, for example, by the pyrogenic oxidation under the condition of using hydrogen and oxygen and the temperature of 850 ° C., the NMOS formation planned region 3 is formed.
A gate oxide film 7 serving as an insulating film according to the present invention is formed on the surface of the Si substrate 1 in the region 4 and the region where the PMOS is to be formed 8n, respectively.
It is formed to a film thickness of about m.

Next, as shown in FIG. 1 (b), the Si substrate 1 is formed by a low pressure CVD method using silane (SiH ₄ ) gas as a source gas and a deposition temperature of 610 ° C.
The gate oxide film 70 and the field oxide film
After depositing the Poly-Si film 8, an amorphous silicon (a-Si) film is formed on the first Poly-Si film 8 by a low pressure CVD method under the conditions that the deposition temperature is 550 ° C. using SiH ₄ gas as a source gas. 9 is deposited to a thickness of about 50 nm (first step).

Next, nitrogen is ion-implanted into the surface layer side of the a-Si film 9. This ion implantation uses a-Si as described later.
The conditions are such that the concentration of nitrogen in the second Poly-Si film 12 formed by crystallizing the film 9 is in the range of 1 × 10 ¹⁹ cm ⁻³ to 1 × 10 ²¹ cm ⁻³ . Here, for example, the ion implantation is performed under the condition that the ion energy is 10 keV and the dose amount is 5 × 10 ¹⁵ cm ⁻² (second step). Nitrogen is introduced into the a-Si film 9 by the ion implantation, and a-
The crystallinity of the Si film 9 becomes more amorphous, and a-
When crystallizing the Si film 9, the crystal grain size can be increased.

The concentration of nitrogen in the second Poly-Si film 12 obtained by crystallization of the a-Si film 9 is 1 × 10 ¹⁹ c.
The range of m ⁻³ to 1 × 10 ²¹ cm ⁻³ is 1 × 10 ¹⁹
If the concentration is less than cm ⁻³ , the second Poly-Si film 12
This is because the effect of containing nitrogen is not obtained, that is, the effect of reducing the diffusion rate of impurities diffusing in the second Poly-Si film 12 cannot be obtained as described later. If the concentration exceeds 1 × 10 ²¹ cm ⁻³ , nitrogen is an N-type impurity, so that P-type impurities introduced into the PMOS formation planned region 4 in the next step are depleted by compensating with nitrogen. This is because it brings about a harmful effect.

Then, using a resist (not shown) patterned by lithography as a mask, a-Si is used.
Phosphorus ions (P ⁺ ) are ion-implanted into only the region 3 where the NMOS is to be formed in the film 9 under the conditions of an ion energy of 10 keV and a dose amount of 5 × 10 ¹⁵ cm ⁻² ,
As shown in FIG. 1C, an N ⁺ type gate region 10 is formed. Similarly, using a resist (not shown) patterned by lithography in the same manner as a mask, boron ions (B ⁺ ) are added only to the PMOS formation planned region 4 of the a-Si film 9, for example, the ion energy is 5 keV and the dose is 5 ×. Ion implantation under the condition of 10 ¹⁵ cm ^-2 , P
^{A +} type gate region 11 is formed.

Thereafter, low temperature long-time annealing is performed for 1 hour to 10 hours at a predetermined temperature within the range of 550 ° C. to 700 ° C. to crystallize the a-Si film 9 (third step). Here, for example, the a-Si film 9 is solid-phase grown under a condition of 600 ° C. for 10 hours in a nitrogen gas atmosphere to crystallize the a-Si film 9. As a result, the second Poly-Si film 1 made of crystals having a grain size larger than that of the lower first Poly-Si film 8 is formed.
2 is formed, and the first Poly-Si film 8 and the second
A Poly-Si film 15 including the Poly-Si film 12 is obtained. The temperature range of the first heat treatment is 550 ° C to 700 ° C.
The reason is that if the temperature is lower than 550 ° C., the a-Si film 9 does not grow, and if the temperature exceeds 700 ° C., the nucleation is too fast and the a-Si film 9 is too fast.
This is because the film 9 does not grow into a large grain size. The treatment time was set in the range of 1 hour to 10 hours because if it was shorter than 1 hour, the crystal grain size was not sufficient, and if it was longer than 10 hours, the crystal growth was saturated. is there.

Next, as heat treatment, for example, 1000 ° C., 1
Rapid thermal anneal under 0 second condition
l; RTA) is performed to diffuse phosphorus or boron doped in the second Poly-Si film 12 into the entire Poly-Si film 15, and at the same time, to remove nitrogen doped in the surface layer side of the second Poly-Si film 12 2 Poly-Si film 12 is segregated at the crystal grain boundaries (fourth step). The heat treatment also activates the previously formed NMOS channel region 5 and PMOS channel region 6.

Next, as shown in FIG. 1 (d), for example, by using a low pressure CVD method under the conditions that tungsten hexafluoride (WF ₆ ) gas and SiH ₄ gas are used as source gases and the deposition temperature is 380 ° C. On the 2Poly-Si film 12, a WSi _x film 13 serving as a metal compound film of the present invention is deposited to a thickness of about 70 nm (fifth step). Further on this layer, for example, S
A SiO ₂ film (offset oxide film) 14 having a thickness of 150 nm was deposited by a CVD method using iH ₄ gas and oxygen gas as source gases and a deposition temperature of 420 ° C.
A W-polycide layer with an offset oxide film 14 composed of the film 8, the second Poly-Si film 12 and the WSi _X film 13 is formed.

Subsequently, anisotropic etching is performed using the resist patterned by the lithography method as a mask,
The polycide layer is formed in a pattern of a first gate electrode 16a serving as the first conductive portion of the present invention and a second gate electrode 16b serving as the second conductive portion of the present invention. In the anisotropic etching, for example, for the offset oxide film 14, a fluorocarbon-based gas is used as an etching gas and W
-For the polycide layer, chlorine gas and oxygen gas are used as etching gases.

After that, arsenic ions (As ⁺ ) are ion-implanted into the region 3 where the NMOS is to be formed on the Si substrate 1 under the conditions of, for example, an ion energy of 20 keV and a dose amount of 5 × 10 ¹³ cm ^-2 . As shown in e), Si substrate 1
On both sides of the first gate electrode 16a of the N-type LDD region 1
Form 7. Further, boron difluoride ions (BF ₂ ⁺ ) are ion-implanted into the PMOS formation region 4 of the Si substrate 1 under the conditions of, for example, an ion energy of 20 keV and a dose amount of 2 × 10 ¹³ cm ⁻² . P-type LDD regions 18 are formed on both sides of the second gate electrode 16b. Further, by a low pressure CVD method, a SiO ₂ film of about 150 nm is deposited on the entire surface of the Si substrate 1 so as to cover the first gate electrode 16a and the second gate electrode 16b, and then the SiO ₂ film is etched back by anisotropic etching. Sidewalls 19 are formed on the side walls of the first gate electrode 16a and the second gate electrode 16b.

Next, arsenic ions are applied to the region 3 where the NMOS is to be formed on the Si substrate 1, for example, ion energy is 20 ke
Ions are implanted under the conditions of V and a dose amount of 3 × 10 ¹⁵ cm ⁻² to form N type source / drain regions 20 in the Si substrate 1 in the region 3. Further, boron difluoride ions are ion-implanted into the PMOS formation region 4 of the Si substrate 1 under the conditions of, for example, an ion energy of 20 keV and a dose amount of 3 × 10 ¹⁵ cm ^-2. A source / drain region 21 of the mold is formed. Then, by RTA under the conditions of 1000 ° C. and 10 seconds, the source /
The impurities doped in the drain regions 20 and 21 are activated. Through the above steps, NMOSFET 22 and P
A CMOS 24 which is a first embodiment of the device of the present invention, which is composed of a MOSFET 23, is manufactured.

In the method of the above embodiment, after the a-Si film 9 is formed, nitrogen is ion-implanted into the a-Si film 9, so that the crystallinity of the a-Si film 9 is made more amorphous. You can Therefore, in the subsequent heat treatment of the third step, the a-Si film 9 can be crystallized to have a larger grain size than the grain size of the lower first Poly-Si film 8, and the second Poly- having less grain boundaries can be crystallized. The Si film 12 can be obtained. Further, as a heat treatment for crystallization of the a-Si film 9, a low temperature long-time annealing optimum for crystallizing the a-Si film 9 is performed.
Can be formed. Moreover, the heat treatment in the fourth step segregates nitrogen, which has a function of reducing the diffusion rate of the impurities that diffuse into the grain boundaries, into the crystal grain boundaries of the second Poly-Si film 12, so that the diffusion of the impurities in the crystal grain boundaries can be suppressed. The suppressing second Poly-Si film 12 can be formed.

As a result, when the RTA for activating the impurities of the source / drain regions 20 and 21 is performed thereafter, the phosphorus diffused into the Poly-Si film 15 by the second Poly-Si film 12 is performed. since or boron can be prevented from diffusing into the WSi _X film 13, phosphorus diffuses the WSi _X film 13 as compared with the conventional method described above, it is possible to reduce the amount of boron. Even if phosphorus or boron is W
Even if the Si _x film 13 is diffused toward the second Poly-Si film 12 side in the region of different conductivity type, the second Poly-Si film 12 prevents phosphorus and boron from diffusing into the lower first Poly-Si film 8. Can be suppressed. Further, during the RTA, phosphorus and boron diffused in the Poly-Si film 15 by the second Poly-Si film 12 are absorbed by the second Poly-Si film 12 and W.
It is possible to suppress precipitation at the crystal grain boundaries of the Si _x film 13.

Further, the WSi _X film 13 contains fluorine because it is formed by using WF ₆ gas.
At the time of A, the nitrogen segregated in the second Poly-Si film 12 lowers the diffusion rate of this fluorine, and thus the grain boundary diffusion of fluorine can be suppressed. Boron diffused in the film 15 can be prevented from penetrating the gate oxide film 7.

Therefore, according to the method of the above embodiment, it is possible to suppress the interdiffusion of phosphorus and boron, the precipitation of boron and phosphorus at the crystal grain boundaries of the Poly-Si film 15, and the penetration of boron into the gate oxide film 7. Therefore, the CMOS including the highly reliable gate oxide film 7 having the first gate electrode 16a and the second gate electrode 16b in which the phosphorus concentration and the boron concentration in the Poly-Si film 15 are maintained at a high concentration is possible.
24 can be manufactured. Therefore, in the CMOS 24 manufactured in this way, the fluctuation of the Fermi level in the Poly-Si film 15 and the first gate electrode 1 when the gate voltage is applied are applied.
6a and the second gate electrode 16b can be suppressed from being depleted, so that the threshold voltage fluctuation is small and the gate oxide film 7 has excellent reliability and excellent MOSFET characteristics.

[0036] In the above embodiment, WSi _X film 13 after depositing the offset oxide film 14 on, since the ion implantation for source / drain regions 20 and 21 formed, WSi _X during this ion implantation Since it is possible to prevent impurities from being introduced into the film 13, this also reduces the amount of impurities diffused in the WSi _x film 13 during the subsequent heat treatment. In addition, in the above-described embodiment, the metal compound film in the present invention is the WSi _X film 13, so that self-aligned salicidation (Self Aligned Silicidat) is performed.
It is possible to form the first gate electrode 16a and the second gate electrode 16b having low resistance without causing a thin line effect such as ion; salicidation).

In the above embodiment, the case where the conductive portion in the present invention is the gate electrode 16 has been described, but the present invention is not limited to this and may be a wiring layer. Although the WSi _X film is formed as the metal compound film in the present invention, other refractory metal silicide film or the like may be used, and the metal compound may be replaced with the metal film.

Further, in the above-mentioned embodiment, a-S is used in the second step.
Although nitrogen is ion-implanted into the i film 9, phosphorus may be ion-implanted instead of nitrogen. Hereinafter, a case where phosphorus is ion-implanted instead of nitrogen to manufacture a CMOS will be described with reference to FIG. 2 as a second embodiment of the method of the present invention. In this embodiment, first, a step similar to the first step in the above-described embodiment is performed to form the first Poly-Si film 8 and a on the Si substrate 1 via the gate oxide film 7 as shown in FIG. -Si
The film 9 is formed.

Then, for example, under the same conditions as in the above-described embodiment, phosphorus is ion-implanted only into the NMOS formation planned region 3 of the a-Si film 9, and the N ⁺ type gate region 10 is formed as shown in FIG. 2B. To form. Further, boron is ion-implanted only in the PMOS formation planned region 4 of the a-Si film 9 to form the P ⁺ type gate region 11, and then the region 4 of the a-Si film 9 is formed.
Is replaced with nitrogen, that is, phosphorus for grain boundary diffusion suppression is ion-implanted. This ion implantation is performed under conditions such that the concentration of phosphorus in the second Poly-Si film 12 formed by crystallizing the a-Si film 9 is in the range of 1 × 10 ¹⁹ cm ⁻³ to 1 × 10 ²¹ m ^−3. Done in. Here, for example, the ion energy is 10
keV and a dose of 1 × 10 ¹⁵ cm ⁻² under the condition of a−
Phosphorus is ion-implanted into the PMOS formation region 4 of the Si film 9 (second step). By the ion implantation, the crystallinity of the a-Si film 9 in the PMOS formation planned region 4 becomes more amorphous, and when the a-Si film 9 is crystallized, the crystal grain size can be increased.

The phosphorus concentration in the second Poly-Si film 12 obtained by crystallization of the a-Si film 9 is 1 × 10 ¹⁹ c.
The reason why the range is m ⁻³ to 1 × 10 ²¹ cm ⁻³ is for the same reason as in the case of nitrogen. Further, here, phosphorus ion implantation for grain boundary diffusion suppression is performed after boron ion implantation into the PMOS formation planned region 4, but boron ion implantation may be performed after grain boundary diffusion suppression phosphorus ion implantation. Good.

Then, a step similar to the third step in the above-described embodiment is performed to crystallize the a-Si film 9 to form the second Po.
The ly-Si film 12 is obtained (third step), and then, for example, 100
RTA is performed at 0 ° C. for 10 seconds to remove phosphorus and boron doped in the second Poly-Si film 12 from Poly-Si.
At the same time as being diffused in the entire film 15, phosphorus doped on the surface layer side of the second Poly-Si film 12 in the PMOS formation planned region 4 is segregated at the crystal grain boundaries of the second Poly-Si film 12 (fourth step). The heat treatment also activates the previously formed NMOS channel region 5 and PMOS channel region 6. After that, as shown in FIG.
The same steps as those shown in (d) and (e) are performed to perform CM
The OS 24 is manufactured.

In the method of the above-described embodiment, as in the above-described embodiment, the second poly-Si film 12 made of crystals having a large grain size and few crystal grain boundaries can be formed by the heat treatment in the third step. Then, when RTA is performed thereafter, mutual diffusion of phosphorus and boron and precipitation of boron and phosphorus at the crystal grain boundaries of the Poly-Si film 15 can be suppressed.

Further, by ion implantation of phosphorus for suppressing grain boundary diffusion, the second Poly-
The Si film 12 can be formed to have a large grain size, and
By the heat treatment in the fourth step, the second Poly in the region 4 is
Since phosphorus is segregated at the crystal grain boundaries of the -Si film 12, PM
In the OS formation planned region 4, the second Poly-Si film 12 in which phosphorus is segregated in a few crystal grain boundaries can be formed. Therefore, at the time of the above RTA, the fluorine contained in the WSi _x film 13 causes the second Poly- in the region 4 where the PMOS is to be formed.
Even if it diffuses to the Si film 12 side, the second Poly-Si film 12
The diffusion rate of fluorine is reduced by the phosphorus segregated in the area, and the grain boundary diffusion of fluorine can be suppressed by this. Therefore, due to the accelerated diffusion of fluorine, the fluorine in the Poly-Si film 15 in the PMOS formation planned region 4 is It is possible to suppress the diffused boron from penetrating the gate oxide film 7.

Therefore, according to the method of the above embodiment, Po
The first gate electrode 16a and the second gate electrode 1 in which the phosphorus concentration and the boron concentration in the ly-Si film 15 are kept high.
It is possible to manufacture the CMOS 24 having the gate oxide film 7 having 6b and high reliability. Also in the CMOS 24 manufactured in this way, it is possible to suppress the fluctuation of the Fermi level in the Poly-Si film 15 and the depletion of the first gate electrode 16a and the second gate electrode 16b at the time of applying the gate voltage. The variation of the value voltage is small, and the gate oxide film 7 has excellent reliability and excellent MOSFET characteristics.

Although nitrogen or phosphorus is introduced into the a-Si film by ion implantation in this embodiment, nitrogen or phosphorus is introduced into the a-Si film by another method such as vapor phase diffusion. It can also be introduced. In this case, the a-Si film is first crystallized by heat treatment and then the second
After forming a Poly-Si film, nitrogen or phosphorus can be introduced into the second Poly-Si film by a method such as a vapor phase diffusion method. For example, using the vapor phase diffusion method, the second Poly-
An example of conditions for introducing phosphorus into the Si film is shown below. Diffusion species and flow rate: POCl ₃ atmosphere temperature: 830 ° C. Processing time: 70 min With this method as well, a semiconductor device having the same effect as that of the above-described embodiment can be manufactured.

[0046]

As described above, according to the semiconductor device of the first aspect, there are few crystal grain boundaries between the first polysilicon film and the metal film or the metal compound film, and the grain boundary diffusion of impurities is suppressed. 1 × 10 ¹⁹ cm ^-3 or more for 1 × 10 ²¹ cm ^-3
Since the second polysilicon film containing the following concentration of nitrogen is provided, impurities are diffused in the crystal grain boundaries of the second polysilicon film when heat treatment is performed in manufacturing this semiconductor device. It is possible to suppress the precipitation of the grains on the grain boundaries. Therefore, even if the metal film or the metal compound film formed on the second polysilicon film contains fluorine, it is possible to suppress the grain boundary diffusion of fluorine into the polysilicon film during the heat treatment during manufacturing. Therefore, even if boron is introduced into the polysilicon film and the insulating film is the gate oxide film, the penetration of boron into the gate oxide film due to the accelerated diffusion of fluorine is prevented.

According to the semiconductor device of the third aspect,
In the invention according to claim 1, 1 × for suppressing grain boundary diffusion of impurities in place of nitrogen contained in the second polysilicon film
Since phosphorus is contained at a concentration of 10 ¹⁹ cm ^-3 or more and 1 × 10 ²¹ cm ^-3 or less , in the present invention also, impurities diffuse in the crystal grain boundaries of the second polysilicon film during the heat treatment during manufacturing. In addition, it is possible to suppress the precipitation of this crystal grain boundary, the metal film or the metal compound film, and to prevent the penetration of boron into the gate oxide film. Also above 2
According to another aspect of the invention, a semiconductor device includes a first semiconductor element and a second semiconductor element, and a conductive portion has a conductivity type different from that of the first conductive portion of the first semiconductor element. If it is composed of the second conductive portion of the second semiconductor element,
At the time of manufacturing, the second polysilicon films of the first and second conductive portions suppress the mutual diffusion of impurities of different conductivity types, so that the impurity concentration in the polysilicon film is kept high. , And has a second conductive portion. Therefore, the semiconductor device of the present invention is, for example, M
In the case of an OSFET, fluctuations in the Fermi level in the polysilicon film and depletion of the gate electrode when a gate voltage is applied are suppressed, so that fluctuations in the threshold voltage are small and the reliability of the gate oxide film is high. Therefore,
It has excellent device characteristics.

According to the method of manufacturing a semiconductor device of the fifth aspect, after the amorphous silicon film is formed, nitrogen is ion-implanted into the amorphous silicon film. 1 × 10 ¹⁹ cm ⁻³ or more consisting of crystals with few crystal grain boundaries 1
Containing nitrogen or phosphorus at a concentration of × 10 ²¹ cm ^-3 or less
It is possible to form the second polysilicon film that. Moreover, the heat treatment in the fourth step segregates nitrogen or phosphorus in the crystal grain boundaries of the second polysilicon film, so that it is possible to form the second polysilicon film that suppresses the diffusion of impurities in the crystal grain boundaries of itself.

According to the semiconductor device manufacturing method of the present invention, since the amorphous silicon film is crystallized by the heat treatment in the second step, the amorphous silicon film is made of a crystal having a large grain size and few grain boundaries. 2 Polysilicon film can be formed. Moreover, the third step
In the second polysilicon film at 1 × 10 ¹⁹ cm ⁻³ or more 1
Nitrogen or liquid should be added so that the concentration becomes less than × 10 ²¹ cm ^-3.
The second step is performed by the heat treatment in the fourth step after the introduction of the second
Since nitrogen or phosphorus is segregated at the crystal grain boundaries of the polysilicon film, it is possible to form the second polysilicon film that suppresses the diffusion of impurities at its own crystal grain boundaries, as in the above invention. Therefore, according to the method of the present invention, for example, when the semiconductor device is a MOSFET, mutual diffusion of impurities of different conductivity types, precipitation of impurities at the crystal grain boundaries of the polysilicon film, and boron penetration through the gate oxide film are suppressed. Therefore, it is possible to manufacture a semiconductor device such as a MOSFET having a highly reliable gate oxide film which has a conductive portion in which the impurity concentration in the polysilicon film is maintained at a high concentration.

[Brief description of drawings]

FIG. 1A to FIG. 1E are side cross-sectional views of main parts for explaining a first embodiment of a method for manufacturing a semiconductor device according to the present invention in the order of steps.

2A and 2B are side cross-sectional views of a main part for explaining a second embodiment of the method for manufacturing a semiconductor device according to the present invention in the order of steps.

FIG. 3 is a side sectional view of an essential part for explaining mutual diffusion of impurities when a CMOS is formed by a conventional method.

[Explanation of symbols]

1 Si substrate (semiconductor substrate) 4 PMOS formation region 8 first 1poly-Si film 9 a-Si film 12 first 2Poly-Si film 13 WSi _X film (metal compound film) 15 Poly-Si film 16a first gate electrode (first 1 conductive part) 16b 2nd gate electrode (2nd conductive part) 22 NMOSFET (1st semiconductor element) 23 PMOSFET (2nd semiconductor element) 24 CMOS (semiconductor device)

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/3205 H01L 21/28 301 H01L 21/8238 H01L 27/092

Claims (6)

(57) [Claims] 1. A semiconductor device having a conductive portion composed of a polysilicon film formed on a semiconductor substrate via an insulating film and a metal film or a metal compound film formed on the polysilicon film, wherein the polysilicon film is formed. Is a first layer formed on the insulating film.
The polysilicon film includes a second polysilicon film formed on the first polysilicon film, and the second polysilicon film has a crystal grain size larger than that of the first polysilicon film. Have and 1 × 10 ¹⁹ c
A semiconductor device comprising nitrogen at a concentration of not less than m ^{−3 and not} more than 1 × 10 ²¹ cm ⁻³ . 2. The semiconductor device comprises a first semiconductor element and a second semiconductor element, and the conductive portion is a first conductive portion of the first semiconductor element.
2. The semiconductor device according to claim 1, wherein the first conductive portion includes a second conductive portion of the second semiconductor element having a different conductivity type. 3. A semiconductor device having a conductive portion composed of a polysilicon film formed on a semiconductor substrate via an insulating film and a metal film or a metal compound film formed on the polysilicon film, wherein the polysilicon film is formed. Is a first layer formed on the insulating film.
The polysilicon film includes a second polysilicon film formed on the first polysilicon film, and the second polysilicon film has a crystal grain size larger than that of the first polysilicon film. Have and 1 × 10 ¹⁹ c
A semiconductor device comprising phosphorus at a concentration of not less than m ^{−3 and not} more than 1 × 10 ²¹ cm ⁻³ . 4. The semiconductor device comprises a first semiconductor element and a second semiconductor element, and the conductive portion includes an N-type first conductive portion of the first semiconductor element and the first semiconductor element. 4. The semiconductor device according to claim 3, wherein the semiconductor device is a P-type second conductive part of the second semiconductor element, and the second polysilicon film in the second conductive part contains the phosphorus. 5. A semiconductor device in which a conductive film is formed by forming a polysilicon film composed of a first film and a second film on a semiconductor substrate with an insulating film interposed therebetween, and forming a metal film or a metal compound film on the polysilicon film. A manufacturing method, comprising: a first step of forming the first polysilicon film and an amorphous silicon film on the insulating film in this order; a second step of implanting nitrogen or phosphorus into the amorphous silicon film; To crystallize the amorphous silicon film to obtain a concentration of 1 × 10 ¹⁹ cm ⁻³ or more and 1 × 10 ²¹ cm ⁻³ or less.
The third step of forming the second polysilicon film containing the nitrogen or phosphorus at a temperature of about 100 degrees C., and heat treating the nitrogen or phosphorus in the second polysilicon film to a grain boundary of the second polysilicon film. A method of manufacturing a semiconductor device, comprising: a fourth step of segregating; and a fifth step of forming the metal film or the metal compound film on the second polysilicon film. 6. A semiconductor device in which a conductive film is formed by forming a polysilicon film composed of a first film and a second film on a semiconductor substrate via an insulating film, and forming a metal film or a metal compound film on the polysilicon film. A manufacturing method, comprising: a first step of forming the first polysilicon film and an amorphous silicon film in this order on the insulating film; and a second heat treatment to crystallize the amorphous silicon film to form the second polysilicon film. And a second step of forming a film of 1 × 10 ¹⁹ cm ⁻³ or more on the second polysilicon film.
The third step of introducing nitrogen or phosphorus to a concentration of ²¹ cm ^-3 or less, and the heat treatment segregate the nitrogen or phosphorus in the second polysilicon film to the crystal grain boundaries of the second polysilicon film. A method of manufacturing a semiconductor device, comprising: a fourth step; and a fifth step of forming the metal film or the metal compound film on the second polysilicon film.