JP3370463B2 - Matrix display device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a matrix type display device such as a liquid crystal display device. More specifically, the present invention relates to a matrix-type display device in which a space between a pixel electrode and a gate electrode line or a source electrode line as viewed in plan is narrowed to improve aperture ratio and display characteristics.

[0002]

2. Description of the Related Art A matrix type display device is usually constructed such that a display material such as a liquid crystal is sandwiched between two opposed substrates and a voltage is selectively applied to the display material. Pixel electrodes made of transparent conductive films arranged in a matrix are provided on at least one of the two substrates, and thin film transistors (hereinafter referred to as TFTs) for selectively applying a voltage to each of the pixel electrodes. ) And the like, and a source electrode line and a gate electrode line for giving a signal to the element are formed. 7 to 8 are plan explanatory views and sectional explanatory views of a conventional structure of a TFT array substrate which is one of the substrates provided with the switching element and the like.

7 to 8, 1 is a source electrode line, 2 is
Is a gate electrode line, 2a is a gate electrode, 3 is a storage capacitor electrode, 4 is a gate insulating film, 5 is an active layer made of a semiconductor such as non-doped amorphous silicon, 6 is an insulating film for an etching stopper, 7 is phosphorus-doped amorphous silicon, etc. Contact layer, 8 is a drain electrode, 9 is a pixel electrode made of a transparent conductive film connected to the drain electrode 8, 10 is a protective film, 11 and 13 are contact holes,
Reference numeral 12 is a storage capacitor insulating film, and 20 is a transparent insulating substrate.

Such a TFT array substrate is manufactured by the following steps. First, the storage capacitor electrode 3 is formed on the surface of the transparent insulating substrate 20 with a transparent conductive film made of ITO or the like. Next, a storage capacitor insulating film 12 is formed on the entire surface, a contact hole 13 for connecting the gate electrode line 2 to the storage capacitor electrode 3 is formed, and the gate electrode line 2 and the gate electrode 2a are formed of Cr or the like. Further, the pixel electrode 9 is formed of a transparent conductive film such as ITO. Then, a gate insulating film 4, a non-doped amorphous silicon film, and an insulating film for an etching stopper are continuously formed, and then pattern processing is performed to form an insulating film 6 for an etching stopper. Further, after forming the phosphorus-doped amorphous silicon film, the contact hole 11 is formed. Then, the source electrode line 1 and the drain electrode 8 are formed by patterning a low resistance material such as Al, and then the contact layer 7 and the active layer 5 are formed by patterning. As a result, the drain electrode 8 and the pixel electrode 9
Is conducted through the contact hole 11, and the TFT 15 connected to the pixel electrode 9 is formed. This TFT1
The TFT array substrate is formed by forming the pixel electrodes 9, the pixel electrodes 9, and the storage capacitors 16 in a matrix.

A matrix type display device is constructed by sandwiching a display material such as liquid crystal between the counter electrode substrate having a color filter and a transparent conductive film so as to face the TFT array substrate thus constructed.

[0006]

In the conventional matrix type display device in which the pixel electrode 9 is formed in the same layer as the gate electrode line 2 and the gate electrode 2a, the pixel electrode 9 is exposed by mask exposure. Since it is formed by photolithography, the pixel electrodes are displaced due to the displacement of the photolithography. On the other hand, when the pixel electrode and the gate electrode line overlap each other on the same plane, a signal short circuit occurs, which causes display failure. Therefore, in order to prevent the pixel electrode and the gate electrode line from overlapping with each other even if the position shift occurs, the gate electrode line is designed to be spaced from the gate electrode line in consideration of the margin of the mask shift.

Since such an interval reduces the area of the pixel electrode, the light passing through or reflected outside the pixel electrode deteriorates the display quality. Therefore, the area outside the pixel electrode is usually provided on the counter substrate or the TFT array substrate. Light is blocked by the light-shielding film thus formed. Such a light-shielding film reduces a light transmission area in a pixel, that is, a so-called aperture ratio, and becomes a cause of hindering improvement of display quality. Therefore, the reduction of the pixel electrode area in consideration of the positional deviation margin of the photolithography as described above leads to the reduction of the aperture ratio, that is, the display quality.

Even when the pixel electrode is in the same layer as the source electrode line, the pixel electrode is provided with an interval in consideration of the positional deviation of photolithography so that a short circuit between the source electrode line and the pixel electrode does not occur in the same manner as described above. This is a cause of reduction in area, that is, reduction in aperture ratio.

As a means for preventing such a decrease in aperture ratio, for example, Japanese Patent Application Laid-Open No. 4-37822 discloses a matrix type display device which eliminates the above-mentioned gap in consideration of the positional deviation of photolithography. ing.
Its structure is shown in FIGS. 9-10 in the same view as FIGS. 7-8 with the same reference numerals.

In this example, after the gate electrode line 2 and the source electrode line 1 are formed on the transparent insulating substrate 20, the pixel electrode 9 is formed.
By using a so-called negative resist in which the resist in the area irradiated with light is patterned for patterning, the electrode lines 1 and 2 are used as a mask, and the pixel electrode 9 is exposed by exposure from the back surface side of the transparent insulating substrate 20. Pattern the
A method of eliminating or reducing the interval between the pixel electrode 9 and each of the gate and source electrode lines 2 and 1 is shown.

However, in this example, since the pixel electrode is patterned by backside exposure using the gate electrode line, the source electrode line and the drain electrode as a mask, the pixel electrode is formed with the gate electrode line and the source electrode line. It has to be formed in the last step. Therefore, when one electrode of the storage capacitor is shared with the pixel electrode and the other storage capacitor electrode is formed on the substrate, the insulating film between them becomes thick and the capacitance value of the storage capacitor becomes small. There is.

Further, in this example, when a normal metal material that does not transmit light is used for the drain electrode connecting the TFT section and the pixel electrode, the resist at the portion overlapping the drain electrode remains when the pixel electrode is patterned. Without
The pixel electrode disappears during etching. That is, there is no conductive area (contact area) between the pixel electrode and the transistor portion. For the above reasons, the drain electrode needs to be a conductive film having transparency. Therefore, since the material used for the drain electrode is limited, Al or Ta which is usually used for the source electrode line or the drain electrode is used.
It is not possible to use low resistance materials such as. Therefore, there is a problem that not only the process and the manufacturing method are restricted but also the display quality is deteriorated due to the high resistance of the drain.

The matrix type display device of the present invention has been made in order to solve the above-mentioned conventional problems. The reduction of the area of the pixel electrode is suppressed to the maximum and the pixel opening is increased to display It is an object of the present invention to improve the quality and realize a matrix type display device which does not deteriorate other display characteristics.

[0014]

[0015]

[0016]

The matrix type display device of the present invention comprises a plurality of gate electrode lines arranged in parallel on a transparent insulating substrate, a plurality of source electrode lines intersecting with the gate electrode lines through an insulating film,
A matrix type display device having a thin film transistor provided at each intersection of the gate electrode line and the source electrode line, and a pixel electrode formed of a transparent electrode connected to the thin film transistor, wherein the pixel electrode has an insulating film interposed therebetween. It is composed of two layers of a first pixel electrode and a second pixel electrode, and the first pixel electrode is the gate electrode line or the source electrode.
Are formed in the same layer as the polar, the second pixel electrode are formed on different <br/> comprising layers through respective with the insulator of the gate electrode line and the source electrode line, and, from the first pixel electrode It is formed in a large area.

Further, the second pixel electrode may be formed between the insulating film formed by two or more layers of the multilayer film in between and the gate electrode line and the source electrode line, the surface of the protective film It may be formed on the uppermost layer .

[0019]

Further , the matrix type display device of the present invention has a plurality of gate electrode lines arranged in parallel on a transparent insulating substrate and a plurality of source electrode lines intersecting with each other through an insulating film provided on the gate electrode lines. A matrix type display having thin film transistors provided at the intersections of the gate electrode lines and the source electrode lines, and two layers of pixel electrodes formed of transparent electrodes connected to the thin film transistors via conductors or capacitors via an insulator. a device, provided in the upper layer of the at least one layer pixel over the scan electrode lines of the pixel electrode
It is formed on the uppermost layer above the protective film . Also,
The gate electrode line material may be Ta.

[0021]

[0022]

[0023]

According to the matrix type display device of the present invention, the pixel electrode is formed of at least two layers, their <br/> respectively with the insulator of the at least the second pixel electrode is the gate electrode line and the source electrode line Since the first pixel electrode is formed in a different layer with a larger size than the first pixel electrode, the second pixel electrode is formed even if the first pixel electrode is formed small to avoid contact with a gate electrode line or the like. Can cover this and improve the aperture ratio. In addition, since the first pixel electrode also serves as one electrode of the storage capacitor, even if the other electrode of the storage capacitor is provided on the substrate, the storage capacitor insulating film does not become too thick, and a large area can be obtained with a small area. Storage capacity can be obtained.

Further, by providing the second pixel electrode in between the two or more layers of insulating films, easily takes first with the pixel electrode near the electrical connection with the pixel electrode is protected from both sides. Further, even if it is provided on the uppermost layer on the protective film, it can be conducted or capacitively coupled with the first pixel electrode to increase the action on the liquid crystal layer.

[0026]

Further, since it is formed above the source electrode line, at least one layer via the protective film of the pixel electrode,
The gate electrode lines and the source electrode lines can be formed so as to fill the entire area surrounded by them, and the aperture ratio is improved. Further, the manufacturing process is simplified and the action on the liquid crystal layer can be increased.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a matrix type display device of the present invention will be described with reference to the drawings.

[Embodiment 1] FIG. 1 is a plan view of a pixel portion of a matrix type display device according to a first embodiment of the present invention, and FIG. 2 is a sectional view taken along line AA.

1-2, 1 is a source electrode line, 2
Is a gate electrode line, 2a is a gate electrode, 3 is a storage capacitor electrode, 4a and 4b are first gate insulating films, respectively.
Insulating film, second insulating film, 5 is an active layer made of a semiconductor such as non-doped amorphous silicon, 6 is an insulating film for etching stopper, 7 is a contact layer made of phosphorus-doped amorphous silicon, and 8 is a drain electrode.
The TFT 15 is formed by these. Reference numeral 9 is a pixel electrode connected to the drain electrode 8, 10 is a protective film, 11 is a contact hole, 20 is a transparent insulating substrate, and the first gate insulating film 4a is formed on the storage capacitor electrode 3 as well. Also serves as an insulating film.

The TFT 15, the pixel electrode 9, the storage capacitor 1
6 together constitutes one pixel of the TFT array substrate which is one substrate of the matrix type display device, and these are TFTs.
The source electrode lines 1 and the gate electrode lines 2 are formed in a matrix on the array substrate, and the source electrode lines 1 and the gate electrode lines 2 are vertically and horizontally formed between them. The storage capacitor 16 includes the storage capacitor electrode 3, a part of the first insulating film 4 a, and a part of the pixel electrode 9.

A pixel electrode 9 is formed in a region surrounded by the gate electrode line 2 and the source electrode line 1 in plan view. The pixel electrode 9 is formed by the first insulating film 4a and the second insulating film 4b. It is sandwiched and is formed on a plane different from that of the gate electrode line 2 and the source electrode line 1. The pixel electrode 9 is electrically connected to the drain electrode 8 through the contact hole 11 provided in the second insulating film 4b.

In this example, the gate electrode 2a, the gate electrode line 2 and the storage capacitor electrode 3 are provided on the substrate in the same layer, but the gate electrode is formed on the storage capacitor insulating film 12 as shown in FIG. 2a and the gate electrode line 2 may be formed, and the storage capacitor electrode 3 and the gate electrode 2a may be formed in different layers. In this case, since the insulating film for the storage capacitor is composed of the storage capacitor insulating film 12 and the first insulating film 4a, the material and the film thickness are set so that a predetermined storage capacitor can be obtained by combining them. It is preferable.

Such a TFT array substrate is manufactured by the following steps. First, the transparent insulating substrate 20
A low-resistance metal such as Cr, Al, or Ta is formed on the upper surface, and a pattern to be the gate electrode line 2 and the gate electrode 2a is formed. Next, a storage capacitor electrode 3 made of a transparent conductive material such as ITO, tin oxide or indium oxide is formed, and a storage capacitor insulating film made of silicon oxide, silicon nitride, tantalum oxide, aluminum oxide or the like and a gate insulating film are formed thereon. The first insulating film 4a for the film is formed by the CVD method or the like. Then, after forming the transparent conductive material described above, the pixel electrode 9 is patterned by photolithography using a photomask.

After the pixel electrode 9 is formed, the second insulating film 4b made of silicon nitride, tantalum oxide, silicon oxide or the like and non-doped amorphous silicon (ia-Si).
After sequentially forming a semiconductor layer such as, and an insulating film such as silicon nitride and silicon oxide by a CVD method or the like, an insulating film 6 for an etching stopper is formed by patterning.

Next, in order to form the contact layer 7, phosphorus-doped amorphous silicon is formed, and then a contact hole 11 for connecting the pixel electrode 9 and the drain electrode 8 is formed by patterning.

Further, Cr and Al for forming the source electrode line 1 and the drain electrode 8 are formed by a sputtering method or the like and patterned. Further, unnecessary phosphorus-doped amorphous silicon layer and non-doped amorphous silicon layer are removed by using the source electrode line 1 and the drain electrode 8 as a mask to form a contact layer 7 and an active layer 5, respectively. Finally, a protective film 10 such as silicon nitride is formed to complete the TFT array substrate. This TF
A matrix type display device is formed by sandwiching a display material such as a liquid crystal material between the T array substrate and a counter electrode substrate on which color filters and transparent electrodes are formed.

In the matrix type display device thus formed, since the pixel electrode 9 is formed on a plane different from the gate electrode line 2 and the source electrode line 1, it is necessary to consider misalignment of photolithography. There is no. Therefore, regardless of the order of forming the gate electrode line 2, the source electrode line 1 and the pixel electrode 9, and without considering the material forming the drain electrode 8, a display having a wide area of the pixel electrode 9 and a high aperture ratio is displayed. It is possible to obtain the device.

Although the gate insulating film 4 is composed of the two insulating films 4a and 4b in this embodiment, the gate insulating film 4 does not necessarily have to be a multi-layered film. It suffices that a multi-layered insulating film be formed between them and the pixel electrode be formed between them.

[Embodiment 2] In Embodiment 1, the same material is used as the first insulating film 4a and the second insulating film 4b sandwiching the pixel electrode 9, but insulating films having different dielectric constants are used. By doing so, it becomes possible to arbitrarily set the electric capacitance between the pixel electrode 9 and the counter electrode substrate. For example, as the first insulating film 4a, a material having a relatively high dielectric constant such as tantalum oxide is used, and as the second insulating film 4b,
By using an insulating film made of a silicon compound such as silicon nitride or silicon oxide, it is possible to continuously form an amorphous silicon layer and an insulating film for an etching stopper, and to reduce the capacitance by increasing the thickness of the gate insulating film as much as possible. The effect is that the film interface can be kept normal by continuous film formation while suppressing, and good transistor characteristics can be obtained.

[Embodiment 3] FIGS. 3 and 4 are a plan view and a cross-sectional view of one pixel portion of a TFT array substrate of another embodiment of the matrix type display device of the present invention.

3 to 4, reference numerals indicate the same parts as in FIGS. 1 and 2, 9a is a first pixel electrode, and 9b is a second pixel electrode. In this embodiment, the pixel electrode is the first pixel electrode 9a.
And the second pixel electrode 9b, and the first pixel electrode 9a
Is formed in the same layer as the gate electrode line 2, the second pixel electrode 9b is formed in a different layer via the first insulating film 4a,
The second pixel electrode 9b is the source electrode line 1 and the gate electrode line 2
It is characterized in that it is formed in the area surrounded by and. That is, the pixel electrodes 9a and 9b are formed in a region surrounded by the gate electrode line 2 and the source electrode line 1 in plan view, but the first pixel electrode 9a is formed by photolithography on the same plane as the gate electrode line 2. It is formed to be smaller than the region in consideration of the positional deviation. On the other hand, the second pixel electrode 9
b is formed so as to fill the above area to improve the aperture ratio. In addition, the drain electrode 8 is formed of the first and second insulating films 4
It has electrical continuity with the first pixel electrode 9a through the contact holes 11 provided in a and 4b. Further, the second pixel electrode 9b is also electrically connected to the first pixel electrode 9a via the contact hole 14 provided in the first insulating film 4a.

According to this embodiment, while the first pixel electrode 9a is formed in the same layer as the gate electrode line 2, the pixel electrode is downsized in consideration of the positional deviation of photolithography. The aperture ratio can be increased by covering with.

Such a TFT array substrate is manufactured by the following steps. First, the transparent insulating substrate 20
A storage capacitor electrode 3 and a storage capacitor insulating film 12 similar to those of the first embodiment are formed on the above, a contact hole 13 is formed, and then Cr or the like is formed.
The pattern a is formed. Furthermore, the same I as in the first embodiment is used.
After forming a transparent conductive material such as TO, the first pixel electrode 9a is formed by photolithography using a photomask. Next, as the first insulating film 4a, an insulating film similar to that of the first embodiment, such as silicon nitride or tantalum pentoxide, is used.
The film is formed by the VD method or the like. Then, after forming a contact hole 14 for establishing conduction in this insulating film, ITO is formed.
The aforementioned translucent conductive material is formed into a film, and the second pixel electrode 9b is patterned by photolithography using a photomask. The patterning of the second pixel electrode 9b is performed so as to fill the area surrounded by the gate electrode line 2 and the source electrode line 1 as described above.

After the second pixel electrode 9b is formed, the second insulating film 4b is used as the above-mentioned insulating material such as silicon nitride, a semiconductor layer such as non-doped amorphous silicon (ia-Si), or an insulating material such as silicon nitride. After forming the film by the CVD method or the like, the insulating film is patterned to form the insulating film 6 for etching stopper.

Next, after forming a phosphorus-doped amorphous silicon layer or the like, a contact hole 11 for connecting the first pixel electrode 9a and the drain electrode 8 is formed by patterning.

Further, a metal material such as Cr and Al for forming the source electrode line 1 and the drain electrode 8 is formed into a film by the sputtering method and patterned. Further, unnecessary semiconductor layers such as amorphous silicon and phosphorus-doped amorphous silicon semiconductor layers are removed by using the source electrode line 1 and the drain electrode 8 as a mask,
The active layer 5 and the contact layer 7 are formed. Finally, a protective film 10 such as silicon nitride is formed to complete the TFT array substrate.

Also in the matrix type display device thus formed, the pixel electrodes 9a and 9b and the source electrode line 1 are formed.
Alternatively, by patterning the first pixel electrode 9a formed on the same plane as the gate electrode line 2 to a small size and forming the second pixel electrode 9b formed on a different layer to a large size, there is no risk of short-circuiting Can be expanded. Further, since the first pixel electrode 9a is formed right above the storage capacitor insulating film 12, the storage capacitor characteristic is not deteriorated.

In the present embodiment, the second pixel electrode 9b is the first
Since the second pixel electrode 9b is formed after the formation of the insulating film 4a, both surfaces of the second pixel electrode 9b are protected by the insulating film, and the contact with the first pixel electrode 9a is close, so that the connection of both pixel electrodes is easy, which is preferable. . However, even if the second pixel electrode 9b is formed on the surface of the protective film 10 by forming a contact hole after forming the protective film 10, forming a transparent conductive material, and performing patterning, for example. The effect can be obtained.

Also in the display device manufactured in this manner, similarly to the first embodiment, regardless of the order of forming the gate electrode line or the source electrode line and the pixel electrode, and without considering the material forming the drain electrode. It is possible to obtain a display device having a high aperture ratio in which the area of the pixel electrode is expanded.

[Embodiment 4] In Embodiment 3, the first pixel electrode 9a and the second pixel electrode 9b are the contact holes 1.
However, in a liquid crystal display device, the display is determined by the voltage applied to the liquid crystal layer. Therefore, the first pixel electrode 9a and the second pixel electrode 9a
Even if the pixel electrode 9b of the second pixel electrode 9b does not have conduction through the contact hole 14, as shown in FIG.
With the presence of, the series capacitance can be formed between the first pixel electrode 9a and the second pixel electrode 9b, and further between the counter electrodes. 5 to 6 are similar to FIGS. 3 to 4, the same reference numerals indicate the same parts, and the positions and connections of the second pixel electrodes 9b are different. Further, in this figure, the second pixel electrode 9b is formed on the protective film 10, but since it is not necessary to make direct contact with the first pixel electrode 9a, the second pixel electrode 9b can be easily formed and acts on the liquid crystal layer. Also grows. However, FIG.
The same is true when the second pixel electrode 9b is provided in the insulating film as in the above example.

According to this embodiment, the step of forming the contact hole 14 in the first and second insulating films 4a and 4b can be omitted, and by providing the second pixel electrode 9b on the protective film 10, The gate insulating film is only one layer, and can be widened without considering the positional deviation of the second pixel electrode 9b in the photolithography as in the third embodiment, and a display device having a high aperture ratio can be obtained.

[Embodiment 5] In Embodiments 3 and 4, the first embodiment
The pixel electrode 9a of FIG. 1 is formed on the same plane as the gate electrode line 2 or the source electrode line 1. However, as shown in FIG. 1, the first pixel electrode 9a is also a plane different from the gate electrode line 2 and the source electrode line 1. Since the pixel electrode can be easily expanded even when the display device is formed, the display device which can achieve the original purpose and has a high aperture ratio can be obtained.

In the case of this embodiment, since the pixel electrode is formed of two layers, there is an effect that the aperture ratio is not lowered even if the mask shift occurs.

[0055]

【The invention's effect】

[0056]

[0057]

According to the matrix type display device of the present invention, since the pixel electrode is formed in two layers, even if the first pixel electrode is formed in the same layer as the gate electrode line or the like, it is the same as the gate electrode line or the like. The gap between the pixel electrode and the gate electrode line formed by one layer is covered by the second pixel electrode which is formed in a different layer and has no possibility of contact, so that a high aperture ratio can be obtained. As a result, a matrix type display device having excellent display quality and display characteristics can be obtained.

[0059]

[0060]

[0061] Further, since the formed above the source electrode line, at least one layer via the protective film of the pixel electrode,
The gate electrode lines and the source electrode lines can be formed so as to fill the entire area surrounded by them, and the aperture ratio is improved. Further, the manufacturing process is simplified and the action on the liquid crystal layer can be increased.

As described above, according to the present invention, the area of the pixel electrode is widened and the aperture ratio is improved without any restriction on the layer structure or process, the material for the drain electrode, etc., and the display quality and display characteristics are improved. An excellent matrix type display device can be obtained.

[Brief description of drawings]

FIG. 1 is an explanatory plan view showing one pixel of a TFT array substrate of an embodiment of a display device of the present invention.

FIG. 2 is a cross-sectional explanatory view taken along the line AA of FIG.

FIG. 3 is a plan view showing one pixel of a TFT array substrate of another embodiment of the display device of the present invention.

4 is a cross-sectional view taken along the line AA of FIG.

FIG. 5: TF of yet another embodiment of the display device of the present invention
It is a plane explanatory view showing one pixel of a T array substrate.

6 is a cross-sectional view taken along the line AA of FIG.

FIG. 7 is an explanatory plan view showing one pixel of a TFT array substrate used in a conventional display device.

8 is a cross-sectional view taken along the line AA of FIG.

FIG. 9 is an explanatory plan view showing one pixel of a TFT array substrate of another example of the conventional display device.

10 is a cross-sectional view taken along the line AA of FIG.

[Explanation of symbols]

1 Source electrode line, 2 Gate electrode line, 2a Gate electrode, 3 Storage capacitor electrode, 4 Gate insulating film, 4a 1st
Insulating film, 4b second insulating film, 8 drain electrode, 9
Pixel electrode, 9a 1st pixel electrode, 9b 2nd pixel electrode, 12 storage capacitor insulating film, 15 TFT, 16 storage capacitor.

Continuation of the front page (56) Reference JP-A-2-149824 (JP, A) JP-A-5-34719 (JP, A) JP-A-6-214245 (JP, A) JP-A-6-95149 (JP , A) JP 5-289106 (JP, A) JP 4-27920 (JP, A) JP 5-216067 (JP, A) JP 3-126921 (JP, A) JP 6-18925 (JP, A) JP 5-34726 (JP, A) JP 6-1848684 (JP, A) JP 4-291240 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G02F 1/136 G02F 1/1343

Claims (5)

(57) [Claims] 1. A plurality of gate electrode lines arranged in parallel on a transparent insulating substrate, a plurality of source electrode lines intersecting with the gate electrode lines through an insulating film, and at intersections of the gate electrode lines and the source electrode lines. a matrix type display device having a pixel electrode made of a transparent electrode connected thin film transistor are respectively provided, and the thin film transistor, 2 the first pixel electrode and second pixel electrode to which the pixel electrode through the insulating film A first pixel electrode , and the first pixel electrode is a gate electrode.
The second pixel electrode is formed in the same layer as the polar line or the source electrode line, and the second pixel electrode is a gate electrode line or a source electrode line , respectively.
And a matrix-type display device formed in different layers with an insulator interposed therebetween and having an area larger than that of the first pixel electrode. 2. An insulating film is formed of a multilayer film of two or more layers between the gate electrode line and the source electrode line, and the second pixel electrode is formed between the insulating films of two or more layers. The matrix type display device according to claim 1 . Wherein the second pixel electrode is formed on the uppermost layer a surface of the holding <br/> Mamorumaku on the source electrode according to claim 1
The matrix type display device described. 4. A plurality of gate electrode lines arranged in parallel on a transparent insulating substrate, a plurality of source electrode lines intersecting with an insulating film provided on the gate electrode lines, the gate electrode line and the source electrode line. A thin film transistor provided at each intersection of the two, and a transparent electrode connected to the thin film transistor via a conductor or a capacitor and via an insulator 2
A matrix type display device having a pixel electrode layer, on at least one layer pixel over the scan electrode lines of the pixel electrode
A matrix type display device formed in the uppermost layer above a protective film provided in the layer . 5. The matrix type display device according to claim 4, wherein the gate electrode line material is Ta.