JP3277299B2 - HIC module for high frequency - Google Patents
HIC module for high frequencyInfo
- Publication number
- JP3277299B2 JP3277299B2 JP00820194A JP820194A JP3277299B2 JP 3277299 B2 JP3277299 B2 JP 3277299B2 JP 00820194 A JP00820194 A JP 00820194A JP 820194 A JP820194 A JP 820194A JP 3277299 B2 JP3277299 B2 JP 3277299B2
- Authority
- JP
- Japan
- Prior art keywords
- mounting portion
- case
- high frequency
- antenna
- hic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Waveguides (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は高周波用ＨＩＣモジュー
ルに関し、特に高周波用ＨＩＣ（ハイブリッド集積回
路）モジュールのケースに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency HIC module, and more particularly to a case of a high frequency HIC (hybrid integrated circuit) module.
【０００２】[0002]
【従来の技術】従来、高周波用ＨＩＣモジュールにおい
ては、図４〜図６に示すように、半導体素子２６がケー
ス２１内に実装された誘電体基板２４上に載置されてお
り、内カバー２２と外カバー２３と誘電体板２９とによ
って密封されている。2. Description of the Related Art Conventionally, in a high frequency HIC module, as shown in FIGS. 4 to 6, a semiconductor element 26 is mounted on a dielectric substrate 24 mounted in a case 21 and an inner cover 22 is provided. , The outer cover 23 and the dielectric plate 29.
【０００３】誘電体基板２４の一端にはアンテナ２５が
取付けられ、他端は接続用金リボン２７を通して同軸端
子２８に接続されている。An antenna 25 is attached to one end of a dielectric substrate 24, and the other end is connected to a coaxial terminal 28 through a connection gold ribbon 27.
【０００４】上記のような構造のハイブリッド集積回路
（以下、ＨＩＣとする）は導波管入力方式であり、ＨＩ
Ｃ内部で同軸モードに変換する構造となっている。すな
わち、導波管で入力されたＲＦ（無線周波）信号は誘電
体板２６を通してＨＩＣ内に入力され、アンテナ２５で
同軸に変換される。[0004] The hybrid integrated circuit (hereinafter, referred to as HIC) having the above structure is of a waveguide input type,
It is structured to convert to coaxial mode inside C. That is, an RF (radio frequency) signal input through the waveguide is input into the HIC through the dielectric plate 26, and is converted coaxially by the antenna 25.
【０００５】ここで、アンテナ２５と内カバー２２との
間のショート距離ｈ5 は導波管を同軸に変換するために
必要な距離で、λg ／４程度である。尚、λg は管内波
長である。Here, a short distance h5 between the antenna 25 and the inner cover 22 is a distance required for converting the waveguide into a coaxial light, and is about λg / 4. Here, λg is the guide wavelength.
【０００６】また、縦の長さａ、横の長さｂ、高さｃの
空胴直方体の共振周波数ｆr0は一般にＴＥmnp モードに
対して、 ｆr0＝［１／２（με）1/2 ］ ・［（ｍ／ａ）2 ＋（ｎ／ｃ）2 ＋（ｐ／ｂ）2 ］1/2 で与えられる。尚、ｍ，ｎ，ｐは整数である。In general, the resonance frequency fr0 of a rectangular parallelepiped having a vertical length a, a horizontal length b, and a height c is fr0 = [1/2 (με) 1/2 ] in the TEmnp mode. [(M / a) 2 + (n / c) 2 + (p / b) 2 ] 1/2 . Note that m, n, and p are integers.
【０００７】よって、上記のような構造のＨＩＣでは誘
電体基板２４を実装する実装部分のケース２１の内壁の
幅ｄ及び深さｈ6 を、上記の式の共振を避けるような寸
法に決める必要がある。Therefore, in the HIC having the above-described structure, the width d and the depth h6 of the inner wall of the case 21 of the mounting portion on which the dielectric substrate 24 is mounted need to be determined so as to avoid resonance in the above equation. is there.
【０００８】一般的には使用周波数が高くなればなるほ
ど、縦の長さａ、横の長さｂ、高さｃを小さくしなけれ
ばならない。実際には、ケース２１の形状が完全な直方
体ではなかったり、内部に実装される部品等によって計
算値からのずれが生ずる。In general, the higher the operating frequency is, the smaller the vertical length a, the horizontal length b, and the height c must be. Actually, the shape of the case 21 is not a perfect rectangular parallelepiped, or a deviation from the calculated value occurs due to components mounted inside.
【０００９】このため、経験から得た値に安全率を乗
じ、各寸法を割り出している。例えば、信号周波数が４
７ＧＨｚの場合、ケース２１の内壁の幅ｄは２ｍｍ、ア
ンテナ２５と内カバー２２との距離ｈ5 は２．１５ｍ
ｍ、ケース２１の深さｈ4 は３ｍｍ程度となる。For this reason, each dimension is determined by multiplying a value obtained from experience by a safety factor. For example, if the signal frequency is 4
In the case of 7 GHz, the width d of the inner wall of the case 21 is 2 mm, and the distance h5 between the antenna 25 and the inner cover 22 is 2.15 m.
m, the depth h4 of the case 21 is about 3 mm.
【００１０】[0010]
【発明が解決しようとする課題】上述した従来のＨＩＣ
モジュールでは、信号周波数がミリ波等の高い周波数帯
の場合、ケースの幅を数ｍｍと非常に小さくしなければ
ならないのに対し、ショートまでの距離を確保するため
にケースの深さを深くしなければならない。The above-described conventional HIC
In the module, when the signal frequency is in a high frequency band such as millimeter waves, the width of the case must be very small, a few mm.On the other hand, the depth of the case must be increased to secure the distance to the short circuit. There must be.
【００１１】このため、ＨＩＣの半導体素子を載置する
誘電体基板の実装部分の幅がその実装部分の深さよりも
小さいので、組立てや調整等の作業性が悪くなるという
問題がある。For this reason, since the width of the mounting portion of the dielectric substrate on which the semiconductor element of the HIC is mounted is smaller than the depth of the mounting portion, there is a problem that workability such as assembling and adjustment is deteriorated.
【００１２】そこで、本発明の目的は上記の問題点を解
消し、組立てや調整等の作業性を向上させることができ
る高周波用ＨＩＣモジュールを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a high frequency HIC module which can solve the above-mentioned problems and can improve workability such as assembly and adjustment.
【００１３】[0013]
【課題を解決するための手段】本発明による高周波用Ｈ
ＩＣモジュールは、ハイブリッド集積回路を密封するた
めの誘電体板と、前記誘電体板を通して入力された無線
周波信号を同軸信号に変換するアンテナとを含む高周波
用ＨＩＣモジュールであって、前記ハイブリッド集積回
路を実装しかつその実装部分の幅がその深さよりも大な
るケース部材と、前記アンテナとのショート距離を確保
するショート板と、前記実装部分上に覆設されかつ前記
ショート板を保持する内カバー部材とを備えている。SUMMARY OF THE INVENTION A high frequency H according to the present invention is provided.
The IC module is a high frequency HIC module including a dielectric plate for sealing a hybrid integrated circuit and an antenna for converting a radio frequency signal input through the dielectric plate into a coaxial signal, wherein the hybrid integrated circuit is and implemented and case member width of the mounting portion becomes larger than its depth, the short plate to secure the short distance between the antenna, is Kutsugae設on said mounting portion and said
And an inner cover member for holding the short plate .
【００１４】[0014]
【００１５】[0015]
【実施例】次に、本発明の一実施例について図面を参照
して説明する。Next, an embodiment of the present invention will be described with reference to the drawings.
【００１６】図１は本発明の一実施例の部分断面を含む
平面図であり、図２は図１のＡＡ線に沿う矢視方向の断
面図であり、図３は図１のＢＢ線に沿う矢視方向の断面
図である。FIG. 1 is a plan view including a partial cross section of one embodiment of the present invention, FIG. 2 is a cross sectional view taken along line AA of FIG. 1, and FIG. 3 is a cross sectional view taken along line BB of FIG. It is sectional drawing of the arrow direction along.
【００１７】これらの図において、半導体素子１１はケ
ース１内に実装された誘電体基板５上に載置されてお
り、内カバー２と外カバー４と誘電体板１０とによって
密封されている。In these figures, a semiconductor element 11 is mounted on a dielectric substrate 5 mounted in a case 1 and is sealed by an inner cover 2, an outer cover 4 and a dielectric plate 10.
【００１８】ケース１内の誘電体基板５の実装部分はそ
の幅ｄが深さｈ2 より大きく作られており、ケース１内
の内カバー２を乗せる部分はその幅Ｗが実装部分の幅ｄ
よりも相当広くなっている。The mounting portion of the dielectric substrate 5 in the case 1 has a width d larger than the depth h2, and the portion on which the inner cover 2 is placed in the case 1 has a width W of the mounting portion width d.
Is much wider than that.
【００１９】内カバー２は誘電体基板５の実装部分を覆
うように覆設され、ネジ９によってケース１内に固定さ
れる。この内カバー２にはアンテナ６とのショート距離
ｈ1を確保するためにショート板３が取付けられてい
る。The inner cover 2 is provided so as to cover the mounting portion of the dielectric substrate 5, and is fixed in the case 1 by screws 9. A short plate 3 is attached to the inner cover 2 to secure a short distance h1 to the antenna 6.
【００２０】誘電体基板５の一端にはアンテナ６が取付
けられ、他端は接続用金リボン７を通して同軸端子８に
接続されている。このアンテナ６は誘電体板１０を通し
てＨＩＣ内に入力されたＲＦ信号を同軸に変換する。An antenna 6 is attached to one end of the dielectric substrate 5, and the other end is connected to a coaxial terminal 8 through a connection gold ribbon 7. The antenna 6 converts the RF signal input into the HIC through the dielectric plate 10 to coaxial.
【００２１】上述した如く、ケース１内の誘電体基板５
の実装部分の幅ｄを深さｈ2 よりも大きくし、つまり実
装部分の深さｈ2 をできるだけ浅くし、内カバー２を乗
せる部分の幅Ｗをできるだけ広くすることで、ケース１
の内壁の深さｈ3 が深くとも、組立てや調整等の作業が
しやすくなる。As described above, the dielectric substrate 5 in the case 1
In this case, the width d of the mounting portion is larger than the depth h2, that is, the depth h2 of the mounting portion is made as shallow as possible, and the width W of the portion on which the inner cover 2 is mounted is made as large as possible.
Even if the depth h3 of the inner wall is deep, work such as assembly and adjustment becomes easy.
【００２２】例えば、信号周波数が４７ＧＨｚの場合、
ケース１の実装部分の幅ｄは１．８ｍｍと非常に狭い
が、この実装部分の深さｈ2 は１．５ｍｍと浅くするこ
とができる。この場合、ショート距離ｈ1 の２．１４ｍ
ｍを確保するために、ケース１の深さｈ3 は３〜４ｍｍ
程度必要となるが、内カバー２を乗せる部分の幅Ｗを７
〜８ｍｍ程度にすれば、組立てや調整等の作業がしやす
くなる。For example, when the signal frequency is 47 GHz,
Although the width d of the mounting portion of the case 1 is very narrow at 1.8 mm, the depth h2 of this mounting portion can be as small as 1.5 mm. In this case, the short distance h1 is 2.14 m
In order to secure m, the depth h3 of the case 1 is 3 to 4 mm.
It is necessary to set the width W of the part
When the thickness is set to about 8 mm, work such as assembly and adjustment becomes easy.
【００２３】このように、ＨＩＣを密封するための誘電
体板１０と、この誘電体板１０を通して入力されたＲＦ
信号を同軸信号に変換するアンテナ６とを含む高周波用
ＨＩＣモジュールにおいて、半導体素子１１を載置する
誘電体基板５を実装するケース１の実装部分の幅ｄがそ
の実装部分の深さｈ2 よりも大となるようにし、アンテ
ナ６とのショート距離ｈ1 を確保するためのショート板
３を内カバー２に取付けることによって、信号周波数に
対してはカットオフとなる寸法（ケース１の内壁の幅ｄ
及び深さｈ3 ）を確保し、導波管部においてはショート
距離ｈ1 を確保したままで、組立てや調整等の作業性を
向上させることができる。As described above, the dielectric plate 10 for sealing the HIC and the RF input through the dielectric plate 10 are provided.
In a high frequency HIC module including an antenna 6 for converting a signal to a coaxial signal, the width d of the mounting portion of the case 1 on which the dielectric substrate 5 on which the semiconductor element 11 is mounted is larger than the depth h2 of the mounting portion. By attaching a short plate 3 to the inner cover 2 to secure a short distance h1 to the antenna 6, the cut-off dimension for the signal frequency (the width d of the inner wall d of the case 1) is obtained.
And the depth h3), and the workability such as assembly and adjustment can be improved while the short distance h1 is secured in the waveguide portion.
【００２４】[0024]
【発明の効果】以上説明したように本発明によれば、ハ
イブリッド集積回路を密封するための誘電体板とこの誘
電体板を通して入力された無線周波信号を同軸信号に変
換するアンテナとを含む高周波用ＨＩＣモジュールにお
いて、ハイブリッド集積回路を実装するケース部材の実
装部分の幅がその実装部分の深さよりも大となるように
し、その実装部分上に覆設された内カバー部材でアンテ
ナとのショート距離を確保するショート板を保持するこ
とによって、組立てや調整等の作業性を向上させること
ができるという効果がある。As described above, according to the present invention, a high frequency including a dielectric plate for sealing a hybrid integrated circuit and an antenna for converting a radio frequency signal inputted through the dielectric plate into a coaxial signal is provided. In the HIC module, the width of the mounting portion of the case member on which the hybrid integrated circuit is mounted is made larger than the depth of the mounting portion, and the inner cover member overlaid on the mounting portion has a short distance to the antenna. By holding the short plate that secures the above, there is an effect that workability such as assembly and adjustment can be improved.
【図１】本発明の一実施例の部分断面を含む平面図であ
る。FIG. 1 is a plan view including a partial cross section of one embodiment of the present invention.
【図２】図１のＡＡ線に沿う矢視方向の断面図である。FIG. 2 is a cross-sectional view taken along the line AA in FIG.
【図３】図１のＢＢ線に沿う矢視方向の断面図である。FIG. 3 is a sectional view taken along line BB in FIG.
【図４】従来例の部分断面を含む平面図である。FIG. 4 is a plan view including a partial cross section of a conventional example.
【図５】図４のＣＣ線に沿う矢視方向の断面図である。FIG. 5 is a cross-sectional view taken along a line CC in FIG.
【図６】図４のＤＤ線に沿う矢視方向の断面図である。FIG. 6 is a cross-sectional view taken along the line DD in FIG.
１ ケース ２ 内カバー ３ ショート板 ４ 外カバー ５ 誘電体基板 ６ アンテナ ８ 同軸端子 １０ 誘電体板 １１ 半導体素子 DESCRIPTION OF SYMBOLS 1 Case 2 Inner cover 3 Short plate 4 Outer cover 5 Dielectric substrate 6 Antenna 8 Coaxial terminal 10 Dielectric plate 11 Semiconductor element
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01P 3/08 H01P 5/08 H01P 5/107 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) H01P 3/08 H01P 5/08 H01P 5/107
Claims (1)
誘電体板と、前記誘電体板を通して入力された無線周波
信号を同軸信号に変換するアンテナとを含む高周波用Ｈ
ＩＣモジュールであって、前記ハイブリッド集積回路を
実装しかつその実装部分の幅がその深さよりも大なるケ
ース部材と、前記アンテナとのショート距離を確保する
ショート板と、前記実装部分上に覆設されかつ前記ショ
ート板を保持する内カバー部材とを有することを特徴と
する高周波用ＨＩＣモジュール。1. A high frequency H including a dielectric plate for sealing a hybrid integrated circuit and an antenna for converting a radio frequency signal input through the dielectric plate into a coaxial signal.
An IC module, comprising: a case member on which the hybrid integrated circuit is mounted and a width of a mounting portion thereof is larger than a depth thereof; a short plate for securing a short distance to the antenna; and a cover member on the mounting portion. And said show
An HIC module for high frequency , comprising: an inner cover member for holding a heat plate .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00820194A JP3277299B2 (en) | 1994-01-28 | 1994-01-28 | HIC module for high frequency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00820194A JP3277299B2 (en) | 1994-01-28 | 1994-01-28 | HIC module for high frequency |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07221511A JPH07221511A (en) | 1995-08-18 |
| JP3277299B2 true JP3277299B2 (en) | 2002-04-22 |
Family
ID=11686657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00820194A Expired - Fee Related JP3277299B2 (en) | 1994-01-28 | 1994-01-28 | HIC module for high frequency |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3277299B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013026789A (en) * | 2011-07-20 | 2013-02-04 | Anritsu Corp | Millimeter wave transmission module and manufacturing method of the same |
-
1994
- 1994-01-28 JP JP00820194A patent/JP3277299B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07221511A (en) | 1995-08-18 |
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