JPH06132708A - Microwave ic module - Google Patents

Microwave ic module

Info

Publication number
JPH06132708A
JPH06132708A JP4260998A JP26099892A JPH06132708A JP H06132708 A JPH06132708 A JP H06132708A JP 4260998 A JP4260998 A JP 4260998A JP 26099892 A JP26099892 A JP 26099892A JP H06132708 A JPH06132708 A JP H06132708A
Authority
JP
Japan
Prior art keywords
waveguide
carrier
module
conversion circuit
constant line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4260998A
Other languages
Japanese (ja)
Inventor
Toshihiko Kaneko
俊彦 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4260998A priority Critical patent/JPH06132708A/en
Publication of JPH06132708A publication Critical patent/JPH06132708A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent deterioration of a noise exponent on account of the loss of a dielectric substrate mounting a module, to enlarge the choices of the dielectric substrate, to reduce the cost of a device and to minituarize it by forming a waveguide-distribution constant line conversion circuit on the carrier of the micro wave IC module. CONSTITUTION:The waveguide-distribution constant line conversion circuit 15 is formed at the back of the one end side of the carrier 12 in the micro wave IC module 11. When the carrier 12 is mounted on the dielectric substrate 14, the waveguide-distribution constant line conversion circuit 15 is set in such a way that it protrudes from a slit hole 16 provided at the side of a waveguide 17 into the waveguide by a prescribed length. The waveguide-distribution constant line conversion circuit 15 receives a micro wave in the waveguide and transmits it to a high frequency circuit including a semiconductor element which is formed on the same carrier 12. A cover 13 seals up and protects the high frequency circuit formed on the carrier 12.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はマイクロ波ICモジュー
ルに関し、特に導波管からマイクロ波信号を受信するマ
イクロ波ICモジュールの構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave IC module, and more particularly to the structure of a microwave IC module that receives a microwave signal from a waveguide.

【0002】[0002]

【従来の技術】図3は従来のマイクロ波ICモジュール
の一例を示す図であり、(a)は平面図、(b)はA−
A線で切断したときの断面図である。
2. Description of the Related Art FIG. 3 is a diagram showing an example of a conventional microwave IC module, (a) is a plan view and (b) is A-.
It is sectional drawing when it cut | disconnects by the A line.

【0003】ここで、マイクロ波ICモジュール21
は、セラミック等の誘電体材料により成るキャリア22
上にマイクロ波用半導体素子を含む高周波回路(低雑音
増幅回路、周波数変換回路等)を有し、カバー23によ
って密閉されている。また、キャリア22は、入出力
用、バイアス電源用および接地用のリード端子を有して
おり、誘電体基板24上に実装される。なお、キャリア
22の裏面と表面との配線はスルーホールを介して行っ
ている。
Here, the microwave IC module 21
Is a carrier 22 made of a dielectric material such as ceramic.
A high-frequency circuit (low-noise amplifier circuit, frequency conversion circuit, etc.) including a semiconductor element for microwaves is provided on the top and is sealed by a cover 23. Further, the carrier 22 has lead terminals for input / output, bias power supply, and ground, and is mounted on the dielectric substrate 24. Wiring between the back surface and the front surface of the carrier 22 is performed through through holes.

【0004】誘電体基板24の一方端側の表面には、導
波管−分布定数線路変換部25が形成されており、導波
管27の側面に設けられたスリット孔26から導波管内
に挿入される。導波管−分布定数線路変換部25は、導
波管内のマイクロ波信号を受信し、分布定数線路を介し
てマイクロ波ICモジュール21の入力用リードへ出力
する。
A waveguide-distributed constant line converter 25 is formed on the surface of the dielectric substrate 24 on one end side, and the waveguide-distributed constant line converter 25 is formed in the waveguide from a slit hole 26 provided on the side surface of the waveguide 27. Is inserted. The waveguide-distributed constant line conversion unit 25 receives the microwave signal in the waveguide and outputs it to the input lead of the microwave IC module 21 via the distributed constant line.

【0005】ところで、誘電体基板24の裏面には導体
膜が形成されているが、導波管内に挿入される部分の導
体膜は除去されている。また、挿入される先端部分の長
さは管内波長の約1/4に、また、先端部分の高さは、
導波管の短絡面から管内波長の約1/4に選定してい
る。
By the way, a conductor film is formed on the back surface of the dielectric substrate 24, but the conductor film in the portion inserted into the waveguide is removed. In addition, the length of the tip part to be inserted is about ¼ of the wavelength in the tube, and the height of the tip part is
The wavelength is selected to be about 1/4 of the guide wavelength from the short-circuit surface of the waveguide.

【0006】[0006]

【発明が解決しようとする課題】上述したように従来
は、導波管とマイクロ波ICモジュールとの間に、誘電
体基板上に形成された導波管−分布定数線路変換部が存
在する。従って、誘電体基板の損失は直接雑音指数の劣
化となるので、誘電体基板の損失を少なくする必要があ
る。このため、誘電体基板の材料としては、マイクロ波
帯において誘電損失の少ない、例えばテフロン等の高価
なものを使用する必要があり、ICモジュールを実装す
る装置がコスト高になるという問題点がある。また、一
般に誘電損失の少ない誘電体基板の誘電率は低いので、
波長短縮効果による回路の小型化に限界があるという問
題点がある。
As described above, conventionally, between the waveguide and the microwave IC module, there is the waveguide-distributed constant line converter formed on the dielectric substrate. Therefore, since the loss of the dielectric substrate directly deteriorates the noise figure, it is necessary to reduce the loss of the dielectric substrate. Therefore, it is necessary to use an expensive material such as Teflon, which has a small dielectric loss in the microwave band, as the material of the dielectric substrate, which causes a problem that the cost of the device for mounting the IC module increases. . In addition, since the dielectric constant of a dielectric substrate with low dielectric loss is generally low,
There is a problem that there is a limit to the miniaturization of the circuit due to the wavelength shortening effect.

【0007】本発明の目的は、マイクロ波ICモジュー
ルのキャリアの一方端側に導波管−分布定数線路変換回
路を形成することにより、同モジュールを実装する誘電
体基板の損失による雑音指数の劣化を防ぎ、また誘電体
基板として高誘電率,低価格の基板が使用でき、結果と
して装置全体の低コスト化、小型化を実現できるマイク
ロ波ICモジュールを提供することにある。
An object of the present invention is to form a waveguide-distributed constant line conversion circuit on one end side of a carrier of a microwave IC module, thereby deteriorating a noise figure due to a loss of a dielectric substrate on which the module is mounted. Another object of the present invention is to provide a microwave IC module that can prevent the above-mentioned problems and can use a substrate having a high dielectric constant and a low price as a dielectric substrate, and as a result can reduce the cost and size of the entire device.

【0008】[0008]

【課題を解決するための手段】本発明のマイクロ波IC
モジュールは、誘電体基板上に実装されて導波管からの
マイクロ波信号を受信するマイクロ波ICモジュールで
あって、誘電体材料からなるキャリアと、このキャリア
の一方端側の裏面に形成されて前記誘電体基板上に実装
されたときに前記導波管の内部に突出する導波管−分布
定数線路変換回路と、前記キャリアの他方端側の表面に
形成されて前記導波管−分布定数線路変換回路が受信し
たマイクロ波信号を受ける半導体素子を含む高周波回路
と、前記導波管−分布定数線路変換回路の出力端と前記
高周波回路の入力端とを接続するために前記キャリアに
設けられるスルーホールと、少なくとも前記高周波回路
を密閉するように設けられるカバーとを備えて構成され
る。また、前記導波管−分布定数線路変換回路が、前記
高周波回路と同じ前記キャリアの表面上に形成され、ま
た前記カバーが、誘電体材料により形成されて前記導波
管−分布定数線路変換回路を含む前記キャリア表面全体
を密閉するように構成してもよい。
Microwave IC of the present invention
The module is a microwave IC module that is mounted on a dielectric substrate and receives a microwave signal from a waveguide. The module is formed of a carrier made of a dielectric material and a back surface on one end side of the carrier. A waveguide-distributed constant line conversion circuit protruding inside the waveguide when mounted on the dielectric substrate, and the waveguide-distributed constant formed on the other end side surface of the carrier. A high frequency circuit including a semiconductor element that receives a microwave signal received by a line conversion circuit, and a carrier provided to connect an output end of the waveguide-distributed constant line conversion circuit and an input end of the high frequency circuit. It comprises a through hole and a cover provided so as to seal at least the high frequency circuit. Further, the waveguide-distributed constant line conversion circuit is formed on the same surface of the carrier as the high frequency circuit, and the cover is made of a dielectric material, and the waveguide-distributed constant line conversion circuit is formed. It may be configured such that the entire surface of the carrier including is sealed.

【0009】[0009]

【実施例】次に本発明について図面を参照して説明す
る。
The present invention will be described below with reference to the drawings.

【0010】図1は本発明の一実施例を示す図であり、
(a)は平面図、(b)はA−A線で切断したときの断
面図である。また、図2は図1に示したキャリア12の
裏面を示す図である。
FIG. 1 is a diagram showing an embodiment of the present invention.
(A) is a plan view and (b) is a cross-sectional view taken along the line AA. FIG. 2 is a view showing the back surface of the carrier 12 shown in FIG.

【0011】ここで、マイクロ波ICモジュール11
は、誘電体材料からなるキャリア12および密閉用のカ
バー13とを有しており、キャリア12の一方端側の裏
面には、導波管−分布定数線路変換回路15が形成され
ている。また、キャリア12の他方端側の表面には、低
雑音マイクロ波用半導体素子等を含む高周波回路(図示
せず)が形成され、カバー13によって密閉されてい
る。
Here, the microwave IC module 11
Has a carrier 12 made of a dielectric material and a cover 13 for sealing, and a waveguide-distributed constant line conversion circuit 15 is formed on the back surface of one end of the carrier 12. A high-frequency circuit (not shown) including a low-noise microwave semiconductor element and the like is formed on the surface of the carrier 12 on the other end side, and is closed by a cover 13.

【0012】図2はキャリア12の裏面側を示す図であ
る。ここで、導波管−分布定数線路変換回路15の部分
を除き裏面全体に導体膜18が形成されており、この導
体膜18を介して誘電体基板14のパターン上にマイク
ロ波ICモジュール11が実装される。また、キャリア
12の表面側と裏面側との接続はスルーホール19を介
して行われる。つまり、裏面側の導波管−分布定数線路
変換回路15からの信号は、スルーホール19を介して
表面側の高周波回路に入力する。
FIG. 2 is a view showing the back side of the carrier 12. Here, the conductor film 18 is formed on the entire back surface except the portion of the waveguide-distributed constant line conversion circuit 15, and the microwave IC module 11 is formed on the pattern of the dielectric substrate 14 via the conductor film 18. To be implemented. Further, the front surface side and the back surface side of the carrier 12 are connected via the through holes 19. That is, the signal from the waveguide-distributed constant line conversion circuit 15 on the back surface side is input to the high frequency circuit on the front surface side through the through hole 19.

【0013】ところで、図1に示したように、誘電体基
板14上にマイクロ波ICモジュール11を実装したと
きに、キャリア12の導波管−分布定数線路変換回路1
5が、導波管17の側面に設けられたスリット孔16か
ら所定長だけ導波管内に突出するように設定している。
By the way, as shown in FIG. 1, when the microwave IC module 11 is mounted on the dielectric substrate 14, the waveguide-distributed constant line conversion circuit 1 of the carrier 12 is mounted.
5 is set so as to project into the waveguide for a predetermined length from the slit hole 16 provided on the side surface of the waveguide 17.

【0014】このようにして、キャリア12上に形成さ
れた導波管−分布定数線路変換回路15が導波管内のマ
イクロ波を受信し、同一キャリア上に形成された高周波
回路へマイクロ波信号を供給することにより、マイクロ
波ICモジュールを実装する誘電体基板14として、従
来のように、特に誘電損失の少ないものを使用する必要
はなく、例えば、ガラスエポキシ材のような安価な基板
を採用できる。また、高誘電率化に伴う波長短縮効果に
よって誘電体基板14を小型化でき、結果的に同基板を
実装する装置を小型化できる。
In this way, the waveguide-distributed constant line conversion circuit 15 formed on the carrier 12 receives the microwave in the waveguide and outputs the microwave signal to the high frequency circuit formed on the same carrier. By supplying the same, it is not necessary to use the one having a particularly small dielectric loss as the dielectric substrate 14 on which the microwave IC module is mounted, and an inexpensive substrate such as a glass epoxy material can be adopted, for example. . Moreover, the dielectric substrate 14 can be miniaturized due to the wavelength shortening effect associated with the increase in the dielectric constant, and as a result, the device for mounting the substrate can be miniaturized.

【0015】なお、本実施例では、導波管−分布定数線
路変換回路をキャリアの裏面側に形成した場合について
説明したが、導波管−分布定数線路変換回路を高周波回
路と同じキャリア表面側に形成しても同様な効果が得ら
れることは明らかである。
In this embodiment, the case where the waveguide-distributed constant line conversion circuit is formed on the back surface side of the carrier has been described, but the waveguide-distributed constant line conversion circuit is formed on the same carrier surface side as the high frequency circuit. It is obvious that the same effect can be obtained by forming the above.

【0016】この場合は、誘電体材料より成るカバーを
使用し、ガラス系接着剤によりキャリアに接合すること
により、導波管−分布定数線路変換回路を含むキャリア
表面全体を密閉し保護することができる。
In this case, by using a cover made of a dielectric material and bonding it to the carrier with a glass adhesive, the entire surface of the carrier including the waveguide-distributed constant line conversion circuit can be sealed and protected. it can.

【0017】[0017]

【発明の効果】以上説明したように本発明によれば、マ
イクロ波ICモジュールのキャリアの一方端側に導波管
−分布定数線路変換回路を形成し、この導波管−分布定
数線路変換回路が導波管側面のスリット孔から導波管内
に突出するように誘電体基板上に実装することにより、
導波管−分布定数線路変換回路が受信した導波管内のマ
イクロ波信号は、同一キャリア上に形成された高周波回
路へ供給されるので、マイクロ波ICモジュールを実装
する誘電体基板の損失による雑音指数の劣化を防ぎ、ま
た誘電体基板として、従来のように、特に誘電損失の少
ないものを使用する必要はなく、安価な基板を採用でき
る。また、高誘電率化に伴う波長短縮効果によって誘電
体基板を小型化でき、結果的に誘電体基板を実装する装
置の低コスト化、小型化が実現できる。
As described above, according to the present invention, a waveguide-distributed constant line conversion circuit is formed on one end side of a carrier of a microwave IC module, and the waveguide-distributed constant line conversion circuit is formed. By mounting on the dielectric substrate so that is projected into the waveguide from the slit hole on the side surface of the waveguide,
Since the microwave signal in the waveguide received by the waveguide-distributed constant line conversion circuit is supplied to the high frequency circuit formed on the same carrier, noise due to loss of the dielectric substrate mounting the microwave IC module is generated. It is not necessary to use a dielectric substrate having a particularly small dielectric loss as in the conventional case, and it is possible to use an inexpensive substrate as the dielectric substrate is prevented from deteriorating. In addition, the wavelength shortening effect associated with the increase in the dielectric constant can reduce the size of the dielectric substrate, and as a result, the cost and size of the device on which the dielectric substrate is mounted can be reduced.

【0018】更に、キャリアの同一表面上に導波管−分
布定数線路変換回路および高周波回路を形成することに
より、キャリア表面全体を誘電体材料より成るカバーに
より密閉して保護できる。
Further, by forming the waveguide-distributed constant line conversion circuit and the high frequency circuit on the same surface of the carrier, the entire surface of the carrier can be sealed and protected by the cover made of a dielectric material.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す図であり、(a)は平
面図、(b)はA−A線で切断したときの断面図であ
る。
1A and 1B are views showing an embodiment of the present invention, in which FIG. 1A is a plan view and FIG. 1B is a sectional view taken along line AA.

【図2】図1に示したキャリア12の裏面を示す図であ
る。
FIG. 2 is a diagram showing a back surface of a carrier 12 shown in FIG.

【図3】従来のマイクロ波ICモジュールの一例を示す
図であり、(a)は平面図、(b)はA−A線で切断し
たときの断面図である。
3A and 3B are diagrams showing an example of a conventional microwave IC module, in which FIG. 3A is a plan view and FIG. 3B is a sectional view taken along the line AA.

【符号の説明】[Explanation of symbols]

11 マイクロ波ICモジュール 12 キャリア 13 カバー 14 誘電体基板 15 導波管−分布定数線路変換回路 16 スリット孔 17 導波管 18 導体膜 19 スルーホール 11 Microwave IC Module 12 Carrier 13 Cover 14 Dielectric Substrate 15 Waveguide-Distributed Constant Line Conversion Circuit 16 Slit Hole 17 Waveguide 18 Conductor Film 19 Through Hole

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 誘電体基板上に実装されて導波管からの
マイクロ波信号を受信するマイクロ波ICモジュールで
あって、誘電体材料からなるキャリアと、このキャリア
の一方端側の裏面に形成されて前記誘電体基板上に実装
されたときに前記導波管の内部に突出する導波管−分布
定数線路変換回路と、前記キャリアの他方端側の表面に
形成されて前記導波管−分布定数線路変換回路が受信し
たマイクロ波信号を受ける半導体素子を含む高周波回路
と、前記導波管−分布定数線路変換回路の出力端と前記
高周波回路の入力端とを接続するために前記キャリアに
設けられるスルーホールと、少なくとも前記高周波回路
を密閉するように設けられるカバーとを備えることを特
徴とするマイクロ波ICモジュール。
1. A microwave IC module mounted on a dielectric substrate to receive a microwave signal from a waveguide, the carrier being made of a dielectric material and formed on a back surface of one end of the carrier. And a waveguide that protrudes inside the waveguide when mounted on the dielectric substrate-a distributed constant line conversion circuit, and the waveguide formed on the other end side surface of the carrier- A high frequency circuit including a semiconductor element that receives a microwave signal received by the distributed constant line conversion circuit, and the carrier for connecting the output end of the waveguide-distributed constant line conversion circuit and the input end of the high frequency circuit. A microwave IC module comprising a through hole provided and a cover provided so as to seal at least the high frequency circuit.
【請求項2】 請求項1記載のマイクロ波ICモジュー
ルにおいて、前記導波管−分布定数線路変換回路が、前
記高周波回路と同じ前記キャリアの表面上に形成され、
また前記カバーが、誘電体材料により形成されて前記導
波管−分布定数線路変換回路を含む前記キャリア表面全
体を密閉するように設けられることを特徴とするマイク
ロ波ICモジュール。
2. The microwave IC module according to claim 1, wherein the waveguide-distributed constant line conversion circuit is formed on the same surface of the carrier as the high frequency circuit,
Further, the microwave IC module, wherein the cover is formed of a dielectric material and is provided so as to seal the entire surface of the carrier including the waveguide-distributed constant line conversion circuit.
JP4260998A 1992-09-30 1992-09-30 Microwave ic module Pending JPH06132708A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4260998A JPH06132708A (en) 1992-09-30 1992-09-30 Microwave ic module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4260998A JPH06132708A (en) 1992-09-30 1992-09-30 Microwave ic module

Publications (1)

Publication Number Publication Date
JPH06132708A true JPH06132708A (en) 1994-05-13

Family

ID=17355645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4260998A Pending JPH06132708A (en) 1992-09-30 1992-09-30 Microwave ic module

Country Status (1)

Country Link
JP (1) JPH06132708A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007066406A1 (en) * 2005-12-08 2007-06-14 The University Of Tokyo Communication device
JP2008524887A (en) * 2004-12-20 2008-07-10 ユナイテッド モノリシック セミコンダクターズ エスアーエス Small electronic components for microwave applications
WO2014068811A1 (en) * 2012-11-02 2014-05-08 日本電気株式会社 Semiconductor package and mounting structure thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5571301A (en) * 1978-11-22 1980-05-29 Mitsubishi Electric Corp Micro wave integrated circuit device
JPS60192401A (en) * 1984-03-14 1985-09-30 Hitachi Ltd Microwave circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5571301A (en) * 1978-11-22 1980-05-29 Mitsubishi Electric Corp Micro wave integrated circuit device
JPS60192401A (en) * 1984-03-14 1985-09-30 Hitachi Ltd Microwave circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008524887A (en) * 2004-12-20 2008-07-10 ユナイテッド モノリシック セミコンダクターズ エスアーエス Small electronic components for microwave applications
WO2007066406A1 (en) * 2005-12-08 2007-06-14 The University Of Tokyo Communication device
WO2014068811A1 (en) * 2012-11-02 2014-05-08 日本電気株式会社 Semiconductor package and mounting structure thereof
EP2916384A4 (en) * 2012-11-02 2016-06-22 Nec Corp Semiconductor package and mounting structure thereof
US9577310B2 (en) 2012-11-02 2017-02-21 Nec Corporation Semiconductor package and semiconductor package mounting structure

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