JP3203380U - 表示パネル - Google Patents
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- Publication number
- JP3203380U JP3203380U JP2016000180U JP2016000180U JP3203380U JP 3203380 U JP3203380 U JP 3203380U JP 2016000180 U JP2016000180 U JP 2016000180U JP 2016000180 U JP2016000180 U JP 2016000180U JP 3203380 U JP3203380 U JP 3203380U
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- pixel electrode
- display panel
- layer
- exposed region
- alignment layer
- Prior art date
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- 230000003746 surface roughness Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 36
- 239000010410 layer Substances 0.000 description 114
- 238000000034 method Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 11
- 230000005684 electric field Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000004220 aggregation Methods 0.000 description 6
- 230000002776 aggregation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
- G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133776—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers having structures locally influencing the alignment, e.g. unevenness
Abstract
Description
2:薄膜トランジスタ層
21:薄膜トランジスタ
22:走査線
23:データライン
24:副画素
25:開口領域
3:絶縁層
31:露出領域
41:透明導電層
42,43:画素電極
42a:第1画素電極
42b:第2画素電極
42a1,42b1:隣接する一端
51,54:フォトレジスト層
52,55:フォトマスク
53,56:パターン化したフォトレジスト
6:配向層
7,7’:凹溝
8:液晶層
81,82:液晶分子
9:カラーフィルターシート基板
90:対向側基板
91:カラーフィルター層
92:ブラックマトリックス
93:保護層
94:共用電極層
95:配向層
Claims (10)
- 第1基板と、
前記第1基板上に位置する薄膜トランジスタ層と、
前記薄膜トランジスタ層上に位置する絶縁層と、
前記絶縁層上に位置して前記絶縁層の露出領域を露出する少なくとも1つの画素電極と、
前記画素電極及び前記露出領域上に位置する配向層と、
を含む表示パネルであって、
前記露出領域上に位置する前記配向層の表面粗さは、前記画素電極上に位置する前記配向層の表面粗さより大きいことを特徴とする表示パネル。 - 前記露出領域上に位置する前記配向層の表面粗さは、前記画素電極上に位置する前記配向層の表面粗さの1.1〜3倍であることを特徴とする請求項1に記載の表示パネル。
- 前記絶縁層の前記画素電極の側辺と鄰接する箇所に凹溝を有することを特徴とする請求項1に記載の表示パネル。
- 前記配向層は前記画素電極と前記露出領域と隣接する箇所に凹溝を有することを特徴とする請求項1に記載の表示パネル。
- 前記凹溝の幅は0.1μm〜5μmであることを特徴とする請求項4に記載の表示パネル。
- 前記凹溝の深みは1nm〜100nmであることを特徴とする請求項4に記載の表示パネル。
- 前記薄膜トランジスタ層は複数の走査線及び複数のデータラインを含み、これらの走査線とこれらのデータラインとは交錯して設置され、複数の開口領域を形成し、少なくとも第1画素電極の内の1つはこれらの走査線の内の1つを亘ることを特徴とする請求項1に記載の表示パネル。
- 前記第1画素電極はこれらの走査線の内の1つを亘って、かつ前記第1画素電極の両端はそれぞれ隣接する2つの開口領域内に位置することを特徴とする請求項7に記載の表示パネル。
- 第2画素電極を更に含み、前記第2画素電極と前記第1画素電極は、互いに隣接するように絶縁して設置され、かつ前記第1画素電極と前記第2画素電極が互いに隣接する一端は、1つの開口領域内に位置することを特徴とする請求項7に記載の表示パネル。
- 前記露出領域は、互いに隣接する前記第1画素電極と前記第2画素電極との間に位置することを特徴とする請求項9に記載の表示パネル。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104103165 | 2015-01-30 | ||
TW104103165 | 2015-01-30 | ||
TW104123658 | 2015-07-22 | ||
TW104123658A TWI560503B (en) | 2015-01-30 | 2015-07-22 | Display panel |
Publications (1)
Publication Number | Publication Date |
---|---|
JP3203380U true JP3203380U (ja) | 2016-03-24 |
Family
ID=55539865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016000180U Active JP3203380U (ja) | 2015-01-30 | 2016-01-15 | 表示パネル |
Country Status (3)
Country | Link |
---|---|
US (1) | US9608012B2 (ja) |
JP (1) | JP3203380U (ja) |
TW (1) | TWI560503B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105068339B (zh) * | 2015-09-01 | 2018-06-01 | 深圳市华星光电技术有限公司 | Hva型液晶显示面板 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101292249B1 (ko) * | 2011-05-18 | 2013-08-02 | 삼성디스플레이 주식회사 | 표시장치 |
TWI518409B (zh) * | 2014-04-29 | 2016-01-21 | 群創光電股份有限公司 | 顯示面板 |
CN203882060U (zh) * | 2014-06-04 | 2014-10-15 | 群创光电股份有限公司 | 显示面板 |
TWI553881B (zh) * | 2014-06-06 | 2016-10-11 | 群創光電股份有限公司 | 薄膜電晶體基板 |
-
2015
- 2015-07-22 TW TW104123658A patent/TWI560503B/zh active
- 2015-08-20 US US14/831,040 patent/US9608012B2/en active Active
-
2016
- 2016-01-15 JP JP2016000180U patent/JP3203380U/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20160223845A1 (en) | 2016-08-04 |
TWI560503B (en) | 2016-12-01 |
US9608012B2 (en) | 2017-03-28 |
TW201627732A (zh) | 2016-08-01 |
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