JP3199712U - エピタキシャルシリコン堆積用の高容量且つ低コストのシステムのためのガス注入器 - Google Patents
エピタキシャルシリコン堆積用の高容量且つ低コストのシステムのためのガス注入器 Download PDFInfo
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- JP3199712U JP3199712U JP2015600076U JP2015600076U JP3199712U JP 3199712 U JP3199712 U JP 3199712U JP 2015600076 U JP2015600076 U JP 2015600076U JP 2015600076 U JP2015600076 U JP 2015600076U JP 3199712 U JP3199712 U JP 3199712U
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- 230000008021 deposition Effects 0.000 title claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 4
- 229910052710 silicon Inorganic materials 0.000 title description 4
- 239000010703 silicon Substances 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 214
- 238000012545 processing Methods 0.000 claims abstract description 107
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000007789 gas Substances 0.000 claims description 198
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000010926 purge Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000012864 cross contamination Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002783 friction material Substances 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009919 sequestration Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05F—DEVICES FOR MOVING WINGS INTO OPEN OR CLOSED POSITION; CHECKS FOR WINGS; WING FITTINGS NOT OTHERWISE PROVIDED FOR, CONCERNED WITH THE FUNCTIONING OF THE WING
- E05F1/00—Closers or openers for wings, not otherwise provided for in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (15)
- 処理チャンバにおける使用のためのガス注入器であって、
前記処理チャンバ内へ第1プロセスガスのジェット流を供給するように構成されるガスオリフィスの第1セット、及び
前記処理チャンバ内へ第2プロセスガスの層流を供給するように構成されるガスオリフィスの第2セットを備え、
前記ガスオリフィスの第1セットは、前記ガスオリフィスの第2セットの少なくとも2つのガスオリフィスの間に配置される、ガス注入器。 - 前記ガス注入器は細長い本体を含み、前記ガスオリフィスの第1セット及び第2セットは前記細長い本体の第1表面上に配置される、請求項1に記載のガス注入器。
- 前記細長い本体はベースプレートに連結される注入プレートを備え、前記ガスオリフィスの第1セット及び第2セットは前記注入プレート内に配置される、請求項2に記載のガス注入器。
- 前記ベースプレートは、それぞれの入口を介して、プロセスガスを受け入れるように構成される複数のプレナムを含む、請求項3に記載のガス注入器。
- 前記ガスオリフィスの第1セット及び第2セットはゾーンに分けられ、各ゾーンは前記複数のプレナムのうちの1つに関連付けられる、請求項4に記載のガス注入器。
- 前記第1プロセスガス及び前記第2プロセスガスの流量を開始、停止、又は変化させることにより、それぞれのゾーンを介したガス注入を時間的に又は空間的に調節できるように、各ゾーンに連結される流量コントローラ
をさらに備える、請求項5に記載のガス注入器。 - 前記第1プロセスガス及び前記第2プロセスガスが同じ種のガスであるように、前記ガスオリフィスの第1セット及び第2セットに連結される第1ガス供給をさらに備える、請求項1から6のいずれか一項に記載のガス注入器。
- 前記第1プロセスガス及び前記第2プロセスガスが異なる種のガスであるように、
前記ガスオリフィスの第1セットに連結される第1ガス供給、及び
前記ガスオリフィスの第2セットに連結される第2ガス供給
をさらに備える、請求項1から6のいずれか一項に記載のガス注入器。 - 前記ガスオリフィスの第1セット及び第2セットを囲み、且つ前記処理チャンバ内にパージガスバリアを供給するように構成されるガスオリフィスの第3セットをさらに備える、請求項1から6のいずれか一項に記載のガス注入器。
- 前記ガス注入器は透明の石英(SiO2)から製造される、請求項1から6のいずれか一項に記載のガス注入器。
- 前記ガス注入器は不透明の石英(SiO2)から製造される、請求項1から6のいずれか一項に記載のガス注入器。
- 基板処理ツールであって、前記基板処理ツールは、
ベース、及び前記ベースから上方へ延在し、一つ又は複数の基板が上に配置されたときに一つ又は複数の基板を支持するように構成されるそれぞれの基板支持面を有する対向する基板支持体のペアを有する基板キャリアと、
前記基板キャリアを支持するために下面を有するエンクロージャを含む第1基板処理モジュールとを備え、前記基板処理モジュールは、
前記対向する基板支持体のペアの間に中央領域に向けて第1プロセスガスのジェット流を供給するように構成されるガスオリフィスの第1セット、及び前記ガスオリフィスの第1セットの両側上に配置され、且つ前記基板キャリア上に配置されるとき、基板の上に第2プロセスガスの層流を供給するように構成されるガスオリフィスの第2セットを含むガス注入器と、
前記エンクロージャから前記第1プロセスガス及び前記第2プロセスガスを除去するために前記ガス注入器の反対側に配置される排気装置とを備える、基板処理ツール。 - 前記基板処理ツールは、直線的な配置で互いに連結される複数の基板処理モジュールを含む指標付きのインライン基板処理ツールであり、前記複数の基板処理モジュールのうちの各基板処理モジュールは、前記基板キャリアを支持し、且つ前記複数のモジュールのうちの第1のモジュールから、任意の介在モジュールを通って、前記複数のモジュールの最後のモジュールへと、前記複数のモジュールを通って直線的に移動するための前記基板キャリア用通路を設けるために、第1端部、第2端部、及び下面を有するエンクロージャを備える、請求項12に記載の基板処理ツール。
- 前記ガス注入器は、前記第1基板処理モジュールの壁に近接して前記基板キャリアの周りにパージガスバリアを設けるように構成されるガスオリフィスの第3セットをさらに備え、前記パージガスバリアは、前記複数の基板処理モジュールの間のクロス汚染又は堆積を実質的に防ぐ、請求項13に記載の基板処理ツール。
- 前記ガス注入器は細長い本体を含み、前記ガスオリフィスの第1セット及び第2セットは前記細長い本体の第1の表面上に配置され、前記細長い本体はベースプレートに連結される注入プレートを備え、前記ガスオリフィスの第1セット及び第2セットは前記注入プレート内に配置される、請求項12に記載の基板処理ツール。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261696778P | 2012-09-04 | 2012-09-04 | |
US61/696,778 | 2012-09-04 | ||
US201261711493P | 2012-10-09 | 2012-10-09 | |
US61/711,493 | 2012-10-09 | ||
US13/721,323 | 2012-12-20 | ||
US13/721,323 US20140060434A1 (en) | 2012-09-04 | 2012-12-20 | Gas injector for high volume, low cost system for epitaxial silicon depositon |
PCT/US2013/055998 WO2014039261A1 (en) | 2012-09-04 | 2013-08-21 | Gas injector for high volume, low cost system for epitaxial silicon deposition |
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JP3199712U true JP3199712U (ja) | 2015-09-10 |
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JP2015600075U Expired - Lifetime JP3199711U (ja) | 2012-09-04 | 2013-08-20 | エピタキシャルシリコン堆積用の高容量且つ低コストのシステムのためのガス排気 |
JP2015600077U Expired - Lifetime JP3199556U (ja) | 2012-09-04 | 2013-08-21 | エピタキシャルシリコン堆積用の高容量且つ低コストのシステムのためのドア |
JP2015600076U Expired - Lifetime JP3199712U (ja) | 2012-09-04 | 2013-08-21 | エピタキシャルシリコン堆積用の高容量且つ低コストのシステムのためのガス注入器 |
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JP2015600077U Expired - Lifetime JP3199556U (ja) | 2012-09-04 | 2013-08-21 | エピタキシャルシリコン堆積用の高容量且つ低コストのシステムのためのドア |
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JP (3) | JP3199711U (ja) |
CN (3) | CN204809192U (ja) |
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JP6511319B2 (ja) * | 2015-03-31 | 2019-05-15 | 株式会社熊谷組 | 構造物の点検装置 |
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-
2012
- 2012-12-20 US US13/721,332 patent/US20140060435A1/en not_active Abandoned
- 2012-12-20 US US13/721,311 patent/US9111980B2/en active Active
- 2012-12-20 US US13/721,323 patent/US20140060434A1/en not_active Abandoned
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2013
- 2013-08-20 CN CN201390000751.2U patent/CN204809192U/zh not_active Expired - Lifetime
- 2013-08-20 JP JP2015600075U patent/JP3199711U/ja not_active Expired - Lifetime
- 2013-08-20 WO PCT/US2013/055796 patent/WO2014039249A1/en active Application Filing
- 2013-08-21 JP JP2015600077U patent/JP3199556U/ja not_active Expired - Lifetime
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- 2013-08-21 JP JP2015600076U patent/JP3199712U/ja not_active Expired - Lifetime
- 2013-08-21 CN CN201390000752.7U patent/CN204809242U/zh not_active Expired - Lifetime
- 2013-08-21 CN CN201390000749.5U patent/CN204809191U/zh not_active Expired - Lifetime
- 2013-08-21 WO PCT/US2013/055998 patent/WO2014039261A1/en active Application Filing
Also Published As
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CN204809191U (zh) | 2015-11-25 |
US9111980B2 (en) | 2015-08-18 |
WO2014039249A1 (en) | 2014-03-13 |
WO2014039261A1 (en) | 2014-03-13 |
CN204809192U (zh) | 2015-11-25 |
CN204809242U (zh) | 2015-11-25 |
JP3199711U (ja) | 2015-09-10 |
JP3199556U (ja) | 2015-09-03 |
US20140060433A1 (en) | 2014-03-06 |
US20140060434A1 (en) | 2014-03-06 |
US20140060435A1 (en) | 2014-03-06 |
WO2014039262A1 (en) | 2014-03-13 |
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