JP3177283B2 - ＧａＡｓデバイスの製造方法および該方法により製造されたデバイス - Google Patents

ＧａＡｓデバイスの製造方法および該方法により製造されたデバイス

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Publication number
JP3177283B2
JP3177283B2 JP04185192A JP4185192A JP3177283B2 JP 3177283 B2 JP3177283 B2 JP 3177283B2 JP 04185192 A JP04185192 A JP 04185192A JP 4185192 A JP4185192 A JP 4185192A JP 3177283 B2 JP3177283 B2 JP 3177283B2
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JP
Japan
Prior art keywords
gaas
region
carrier
variation
concentration
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Expired - Lifetime
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JP04185192A
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English (en)
Japanese (ja)
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JPH04318919A (ja
Inventor
レニー アバーナスィ キャミー
レン ファン
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AT&T Corp
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AT&T Corp
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Publication date
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Publication of JPH04318919A publication Critical patent/JPH04318919A/ja
Application granted granted Critical
Publication of JP3177283B2 publication Critical patent/JP3177283B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type

Landscapes

  • Bipolar Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP04185192A 1991-02-28 1992-02-28 ＧａＡｓデバイスの製造方法および該方法により製造されたデバイス Expired - Lifetime JP3177283B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/662,550 US5171704A (en) 1991-02-28 1991-02-28 Gaas device fabrication utilizing metalorganic molecular beam epitaxy (mombe)
US662550 1991-02-28

Publications (2)

Publication Number Publication Date
JPH04318919A JPH04318919A (ja) 1992-11-10
JP3177283B2 true JP3177283B2 (ja) 2001-06-18

Family

ID=24658174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04185192A Expired - Lifetime JP3177283B2 (ja) 1991-02-28 1992-02-28 ＧａＡｓデバイスの製造方法および該方法により製造されたデバイス

Country Status (7)

Country Link
US (1) US5171704A (enExample)
EP (1) EP0501684B1 (enExample)
JP (1) JP3177283B2 (enExample)
KR (1) KR100262998B1 (enExample)
CA (1) CA2059407C (enExample)
DE (1) DE69232213T2 (enExample)
TW (1) TW236035B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6360847B1 (en) 1999-05-17 2002-03-26 Mitsubishi Denki Kabushiki Kaisha Elevator system and speed governing apparatus
US8763763B2 (en) 2008-12-11 2014-07-01 Mitsubishi Electric Corporation Elevator apparatus having car position detection

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0544437B1 (en) * 1991-11-27 2003-09-17 AT&T Corp. Method for selectively growing aluminum-containing layers
JP3386302B2 (ja) * 1995-12-20 2003-03-17 三菱電機株式会社 化合物半導体へのｎ型ドーピング方法およびこれを用いた化学ビーム堆積方法並びにこれらの結晶成長方法によって形成された化合物半導体結晶およびこの化合物半導体結晶によって構成された電子デバイスおよび光デバイス
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
JP2000068284A (ja) * 1998-08-19 2000-03-03 Sharp Corp ヘテロ接合バイポーラトランジスタの製造方法及びパワーアンプ
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
CN100474512C (zh) * 2005-01-26 2009-04-01 中国科学技术大学 一种ⅲ-ⅴ族半导体化合物及固熔体薄膜的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807008A (en) 1987-09-14 1989-02-21 Rockwell International Corporation Static memory cell using a heterostructure complementary transistor switch

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
JP2675039B2 (ja) * 1988-02-03 1997-11-12 株式会社日立製作所 半導体装置
JP2801624B2 (ja) * 1988-12-09 1998-09-21 株式会社東芝 ヘテロ接合バイポーラトランジスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807008A (en) 1987-09-14 1989-02-21 Rockwell International Corporation Static memory cell using a heterostructure complementary transistor switch

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ＪＯＵＲＮＡＬ ＯＦ ＣＲＹＳＴＡＬ ＧＬＯＷＴＨ．ｖｏｌ５６，ｎｏ．１−４，Ｆｅｂｒｕｒｙ １９８９，Ｎｏｒｔｈ−Ｈｏｌｌａｎｄ，Ａｍｓｔｅｒｄａｍ ｐ．１８１−１８４ ＹＳＩＨＩＲＯ ＫＡＷＡＧＵＣＨＩ ＥＴ ＡＬ．’Ｓｎ ＤＯＰＩＮＧ ＦＯＲ ＩＮＰ ＡＮＤ ＩｎＰ ＡＮＤ ＩｎＧａＡｓ ＧＲＯＷＮ ＢＹ ＭＥＴＡＬＯＲＧＡＮＩＣ ＭＯＬＥＣＵＬＡＲ ＢＥＡＭ ＥＰＩＴＡＸＹ ＵＳＩＮＧ ＴＥＴＲＡＥＴＨＹＬＴＩＮ’

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6360847B1 (en) 1999-05-17 2002-03-26 Mitsubishi Denki Kabushiki Kaisha Elevator system and speed governing apparatus
US8763763B2 (en) 2008-12-11 2014-07-01 Mitsubishi Electric Corporation Elevator apparatus having car position detection

Also Published As

Publication number Publication date
JPH04318919A (ja) 1992-11-10
KR920017276A (ko) 1992-09-26
EP0501684A3 (en) 1993-10-06
CA2059407C (en) 1999-01-12
KR100262998B1 (ko) 2000-09-01
DE69232213D1 (de) 2002-01-03
TW236035B (enExample) 1994-12-11
US5171704A (en) 1992-12-15
EP0501684A2 (en) 1992-09-02
CA2059407A1 (en) 1992-08-29
DE69232213T2 (de) 2002-06-27
EP0501684B1 (en) 2001-11-21

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