KR100262998B1 - GaAs 장치 제조 방법 및 장치 - Google Patents

GaAs 장치 제조 방법 및 장치 Download PDF

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Publication number
KR100262998B1
KR100262998B1 KR1019920002625A KR920002625A KR100262998B1 KR 100262998 B1 KR100262998 B1 KR 100262998B1 KR 1019920002625 A KR1019920002625 A KR 1019920002625A KR 920002625 A KR920002625 A KR 920002625A KR 100262998 B1 KR100262998 B1 KR 100262998B1
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KR
South Korea
Prior art keywords
gaas
region
carrier
concentration
tin
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Expired - Lifetime
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KR1019920002625A
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English (en)
Korean (ko)
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KR920017276A (ko
Inventor
알 애버내씨 씨.
렌 판
Original Assignee
죤 제이. 키세인
에이 티 앤드 티 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H10P14/22—
    • H10P14/24—
    • H10P14/2911—
    • H10P14/3221—
    • H10P14/3421—
    • H10P14/3442—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019920002625A 1991-02-28 1992-02-21 GaAs 장치 제조 방법 및 장치 Expired - Lifetime KR100262998B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US662,550 1991-02-28
US07/662,550 US5171704A (en) 1991-02-28 1991-02-28 Gaas device fabrication utilizing metalorganic molecular beam epitaxy (mombe)

Publications (2)

Publication Number Publication Date
KR920017276A KR920017276A (ko) 1992-09-26
KR100262998B1 true KR100262998B1 (ko) 2000-09-01

Family

ID=24658174

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Application Number Title Priority Date Filing Date
KR1019920002625A Expired - Lifetime KR100262998B1 (ko) 1991-02-28 1992-02-21 GaAs 장치 제조 방법 및 장치

Country Status (7)

Country Link
US (1) US5171704A (enExample)
EP (1) EP0501684B1 (enExample)
JP (1) JP3177283B2 (enExample)
KR (1) KR100262998B1 (enExample)
CA (1) CA2059407C (enExample)
DE (1) DE69232213T2 (enExample)
TW (1) TW236035B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69233203T2 (de) * 1991-11-27 2004-05-06 At & T Corp. Verfahren zum selektiven Abscheiden von Aluminium enthaltenden Schichten
JP3386302B2 (ja) * 1995-12-20 2003-03-17 三菱電機株式会社 化合物半導体へのｎ型ドーピング方法およびこれを用いた化学ビーム堆積方法並びにこれらの結晶成長方法によって形成された化合物半導体結晶およびこの化合物半導体結晶によって構成された電子デバイスおよび光デバイス
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
JP2000068284A (ja) * 1998-08-19 2000-03-03 Sharp Corp ヘテロ接合バイポーラトランジスタの製造方法及びパワーアンプ
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
JP4306014B2 (ja) 1999-05-17 2009-07-29 三菱電機株式会社 調速装置
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
CN100474512C (zh) * 2005-01-26 2009-04-01 中国科学技术大学 一种ⅲ-ⅴ族半导体化合物及固熔体薄膜的制备方法
EP2361869A4 (en) 2008-12-11 2014-05-14 Mitsubishi Electric Corp ELEVATOR APPARATUS

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
US4807008A (en) * 1987-09-14 1989-02-21 Rockwell International Corporation Static memory cell using a heterostructure complementary transistor switch
JP2675039B2 (ja) * 1988-02-03 1997-11-12 株式会社日立製作所 半導体装置
JP2801624B2 (ja) * 1988-12-09 1998-09-21 株式会社東芝 ヘテロ接合バイポーラトランジスタ

Also Published As

Publication number Publication date
KR920017276A (ko) 1992-09-26
EP0501684B1 (en) 2001-11-21
CA2059407C (en) 1999-01-12
JP3177283B2 (ja) 2001-06-18
CA2059407A1 (en) 1992-08-29
US5171704A (en) 1992-12-15
TW236035B (enExample) 1994-12-11
EP0501684A3 (en) 1993-10-06
DE69232213D1 (de) 2002-01-03
DE69232213T2 (de) 2002-06-27
EP0501684A2 (en) 1992-09-02
JPH04318919A (ja) 1992-11-10

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