JP3170519B2 - Memory card - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a memory card constituted by using a resin-encapsulated semiconductor device capable of high-density mounting.

[0002]

2. Description of the Related Art At present, cash cards, credit cards and the like are widely used. A magnetic stripe is applied to a plastic card, and the information recorded on the magnetic card is read to confirm the identity of the person. That's what I did. In such a magnetic recording system, information is easily read by a third party, and the amount of recordable information is small.

Therefore, in recent years, a so-called IC card in which an IC having functions such as a memory and a CPU is mounted on a card-shaped base has been developed and put into practical use.

[0004] In addition, a memory card on which an extremely thin semiconductor device is mounted instead of the IC itself has been proposed. FIG. 12 is a partially broken perspective view showing a conventional memory card. In the drawing, 1 is a cover, 2 is a frame, 3 is a metal shutter, and 4 is a plurality of resin-encapsulated semiconductor devices 5 and a plurality of chip capacitors 6 as shown in FIGS. The printed circuit board 7 is a connection pad.

The resin-sealed semiconductor device 5 is shown in FIG.
As shown in FIG. 3, the lead 8 is fixed to the printed circuit board 4 by the solder 9.

The resin-sealed semiconductor device 5 is similar to that shown in FIG.
Reference numeral 10 denotes a semiconductor element having a circuit formed on a silicon surface, and reference numeral 11 denotes a semiconductor element 1
Reference numeral 0 denotes a die pad fixed using an adhesive 12, and is supported by a die pad support (not shown). 1
Reference numeral 3 denotes an Au wire for electrically connecting a wire bonding pad formed on the semiconductor element 10 to the lead 8, and reference numeral 14 denotes a sealing resin in which one end of the lead 8 is sealed.

The resin-encapsulated semiconductor device having this configuration will be described in the order of manufacturing steps.
1 is fixed using an adhesive 12. Then, a wire bonding pad formed on the semiconductor element 10 and the lead 8 are electrically connected by the Au wire 13. Thereafter, the whole is sealed with a sealing resin 14 so that one end of the lead 8 is exposed. Then, the lead 8 protruding from the sealing resin 14 and a die pad support (not shown) are cut and bent to obtain a resin-sealed semiconductor device. Then, the leads 8 are connected to the printed board 4 by heat.
Then, a single memory card is completed by bonding with a solder 9 and covering the cover 1.

[0008] The memory card of this configuration has a card thickness larger than that of an IC card. However, since each function itself uses the resin-encapsulated semiconductor device 5, the memory card has high reliability. It has the advantages of high target strength, excellent mass productivity due to ease of manufacture, and a large amount of information.

In recent years, electronic devices have been reduced in size and thickness, including the development of memory cards, but the TSOP (Thin) currently mounted on the memory cards has been developed.
-Small-Outline-Package), T
QFP (Thin-Quad-Flat-Packag)
e) A thin resin-sealed semiconductor device having a mounting height of 1.2 mm Max is mainly used.

In recent years, the amount of information of a memory card has been increasing remarkably, and the memory card has a thickness of 3.3 mm.
It is within the standard of 85.6 mm long and 54.0 mm wide. The semiconductor devices mounted on the memory card are thinner and more and more dense.

[0011]

However, in the resin-encapsulated semiconductor device and the memory card having the above-described structure, the leads used in the semiconductor device have become thinner (from 0.15 mm to 0.1 mm) as the semiconductor device becomes thinner. 125 mm or 0.1 mm), the external leads are likely to bend, hindering the mounting on the board, and the increase in the amount of information in the memory card has led to an increase in the memory capacity of the semiconductor element. There is a problem in that it becomes large in a planar shape, and it is not possible to sufficiently increase the density.

The present invention is intended to reduce the number of mountings due to the planar expansion of a semiconductor device, and to eliminate the adverse effects on the substrate mounting due to bending of the leads of the semiconductor device. An object of the present invention is to provide an excellent memory card in which a sealing portion is improved to enable high-density mounting of a resin-sealed semiconductor device.

[0013]

A memory card according to the present invention comprises: a first semiconductor element having a first electrode formed thereon;
Having a surface and a back surface, and electrically connected to the first electrode.
The first lead and a part of the surface of the first lead are exposed.
The first lead and the first semiconductor element
And a first resin-encapsulated semiconductor device having an encapsulation resin for covering the element.
Device, a second semiconductor element on which the second electrode is formed, and a table.
A surface and a back surface, and electrically connected to the second electrode.
The second lead and a part of the back surface of the second lead are exposed.
The second lead and the second semiconductor element
A second resin-sealed semiconductor device having a sealing resin covering
And the first resin-encapsulated semiconductor device and the second tree.
A memory including a substrate on which a fat-sealed semiconductor device is mounted
A card, wherein the first resin-encapsulated semiconductor device is
The second resin-encapsulated semiconductor device is provided with the first lead.
The exposed surface and the exposed back of the second lead
Mounted on the board with the surface connected
It is characterized by the following.

[0014]

[0015]

According to the present invention, the resin-encapsulated semiconductor device in the memory card according to the present invention can be mounted at high density on a printed circuit board by the lead shape and the resin-encapsulated portion.

[0016]

FIG. 1 is a sectional view showing one embodiment of a resin-sealed semiconductor device of a memory card according to the present invention. In the figure, reference numeral 15 denotes the detailed configuration as shown in FIG.
FIG. 1 shows a detailed configuration of a resin-encapsulated semiconductor device (hereinafter simply referred to as a “downward semiconductor device”) having downward leads 16 having downward leads 16 formed with the soldering surfaces of the internal leads facing downward. As shown in FIG. 1B, a resin-encapsulated semiconductor device with upward leads (hereinafter simply referred to as upward semiconductor device) having upward leads 18 formed with the soldering surfaces of the internal leads facing upward.

In the downward semiconductor device 15 and upward semiconductor device 17 having this configuration, the mounting area can be reduced because the leads do not go outside.

As for the manufacturing method, it goes without saying that it can be manufactured by the same process as the conventional method, but the shape of the mold to be molded with resin is as shown in FIG. It is.

FIGS. 2 and 3 are a partially detailed cross-sectional view and a cross-sectional view taken in the direction of the arrow A showing an embodiment of the memory card according to the present invention. In the memory card having this configuration, bonding pads (not shown) are provided on both surfaces of the printed circuit board 4, and the downward leads 16 of the downward semiconductor device 15 and the upward leads 18 of the upward semiconductor device 17 are soldered to the bonding pads. It is fixed by. As a result, the mounting height is extremely low, and a high-density and thin memory card can be manufactured. At this time, since the downward lead 16 and the upward lead 18 are fitted in the resin, the lead does not bend and the board can be mounted smoothly.

FIGS. 4 to 8 show various methods for increasing the solder joint strength when the leads are mounted on the substrate. FIG.
4 (A) and FIG. 4 (B), the three surfaces of each lead 16 are exposed, so that the lead strength is slightly sacrificed and the solder bonding strength can be increased. FIG. 5 (A) and FIG.
(B) shows that the side surface of each lead 16 is exposed by half, and the solder joint strength is slightly sacrificed to increase the lead strength. 4 and 5 can be manufactured with a mold design.

Further, since the lead is usually cut and bent after the solder plating, the cut surface is not plated with solder. Of course, the solder is not attached even at the time of board mounting, and the bonding is insufficient. Therefore, in the embodiment shown in FIG.
A (see FIG. 6A) and cutting after solder plating, solder 9 is attached to half of the cross section of the lead 16 (see FIG. 6B), and the bonding strength can be increased.

Similarly, as a method of producing a solder joint shape,
FIG. 7 is shown. In this embodiment, the lead cutting is made two to three times longer than the lead thickness, and then the lead is bent upward and soldered. At this time, the mounting area is naturally increased by the lead thickness.

FIG. 8 shows that the lead 16 is previously set up (see FIG. 8 (A)) and soldered to the upset 19 (see FIG. 8 (B)).
And the strength can be increased.

In the above description, the solder bonding of the downward lead 16 has been described. However, it is needless to say that the solder bonding of the upward lead 18 can be similarly performed.

FIG. 9 is a sectional view showing another embodiment of the resin-sealed semiconductor device according to the present invention. In the figure, reference numeral 20 denotes a detailed configuration of a resin-encapsulated semiconductor device having a normal lead 21 and an upward lead 18 as shown in FIG.
FIG. 9 shows the detailed structure of the semiconductor device 22 in FIG.
As shown in FIG. 2B, a resin-encapsulated semiconductor device with upward and normal leads having upward leads 18 and normal leads 23 (hereinafter simply referred to as upward and normal semiconductor device).

FIG. 9C shows the downward semiconductor device 15 and FIG. 9D shows the upward semiconductor device 17.

In the normal / upward semiconductor device 20, the upward / normal semiconductor device 22, the downward semiconductor device 15, and the upward semiconductor device 17 having this configuration, the lead does not go out (of course, the normal leads 21 and 23 minutes). ), The mounting area can be reduced.

As for the manufacturing method, it goes without saying that it can be manufactured by the conventional steps.

FIG. 10 is a sectional view showing an embodiment of the memory card according to the present invention, which is a memory card on which the resin-sealed semiconductor device shown in FIGS. 9A to 9D is mounted. In this case, the downward lead 16 of the downward semiconductor device 15 and the upward lead 18 of the upward semiconductor device 17 are directly connected to each other by solder 24 as shown in FIG. Since this connection portion is within the outer shape of the semiconductor device, the mounting area can be reduced. Then, a normal / upward semiconductor device 20 is connected to one of a plurality of downward semiconductor devices 15 and upward semiconductor devices 17 which are integrally connected, and an upward / normal semiconductor device 22 is connected to the other. It is to be fixed to the substrate 4. At this time, the sum of the thickness of the downward lead 16 and the sealing resin 14 on the upper part thereof and the thickness of the upward lead 18 and the thickness of the sealing resin 14 on the lower part thereof are equal to those of the resin-encapsulated semiconductor devices 15 and 17. If the thickness is the same as the thickness, useless space is reduced, and the mounting can be performed with the minimum necessary thickness.

As described above, since a large number of resin-sealed semiconductor devices can be mounted on the memory card, the capacity can be greatly increased.

[0031]

As described in detail above, according to the memory card using the resin-encapsulated semiconductor device according to the present invention, the encapsulation resin portion above or below the internal leads is removed to expose the internal leads. When mounting on a printed circuit board using a resin-encapsulated semiconductor device in which the lower or upper side of the internal lead is formed as a soldering surface, or a resin-encapsulated semiconductor device in which one is a normal lead and the other is an internal lead Can be eliminated, and mounting can be performed smoothly and reliably. Moreover, when these resin-encapsulated semiconductor devices are mounted on a printed circuit board to form a memory card, the thickness can be reduced and the density can be increased.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a resin-sealed semiconductor device of a memory card according to the present invention.

FIG. 2 is a partially detailed sectional view showing one embodiment of a memory card according to the present invention.

FIG. 3 is a sectional view in the direction of arrow A in FIG. 2;

FIG. 4 is a cross-sectional view of a principal part showing another example of the solder joint in FIG. 2;

FIG. 5 is a cross-sectional view of a principal part showing still another example of a solder joint in FIG. 2;

FIG. 6 is a cross-sectional view of a principal part showing still another example of the solder joint in FIG. 2;

FIG. 7 is a cross-sectional view of a principal part showing still another example of the solder joint in FIG. 2;

FIG. 8 is a cross-sectional view of a principal part showing still another example of the solder joint in FIG. 2;

FIG. 9 is a cross-sectional view showing another embodiment of the resin-sealed semiconductor device of the memory card according to the present invention.

FIG. 10 is a cross-sectional view of a main part showing another embodiment of the memory card according to the present invention.

FIG. 11 is a partially detailed sectional view of FIG. 10;

FIG. 12 is a partially cutaway perspective view of a conventional memory card.

FIG. 13 is a partially detailed sectional view of FIG. 12;

14 is a cross-sectional view of the resin-sealed semiconductor device of FIG.

[Explanation of symbols]

 15 Resin-sealed semiconductor device with downward lead 16 Downward lead 17 Resin-sealed semiconductor device with upward lead 18 Upward lead 20 Normal / upward lead resin-sealed semiconductor device 21 Normal lead 22 Downward Resin-sealed semiconductor device with normal leads 23 Normal leads

Continuation of front page (56) References JP-A-62-298146 (JP, A) JP-A-2-239651 (JP, A) JP-A-4-171856 (JP, A) JP-A-3-17644 (JP) (U, U) Sho 60-45447 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) G06K 19/077 B42D 15/10 H01L 23/28-23/50

Claims (1)

(57) [Claims] 1. A first semiconductor element on which a first electrode is formed.
And a front and back surface, and electrically connected to the first electrode.
The first lead and the first lead so that a part of the surface of the first lead is exposed.
A sealing resin covering the first lead and the first semiconductor element;
A first resin-encapsulated semiconductor device having a first electrode, a second semiconductor element on which a second electrode is formed, and a front surface and a back surface, which are electrically connected to the second electrode.
And the second lead so that a part of the back surface of the second lead is exposed.
A sealing resin covering the second lead and the second semiconductor element;
A second resin-sealed semiconductor device having the same, the first resin-sealed semiconductor device, and the second resin-sealed
Card including a semiconductor device and a substrate on which the semiconductor device is mounted
In a, the second resin sealing the first resin-encapsulated semiconductor device
Semiconductor device, wherein the exposed surface of the first lead is
And the exposed back surface of the second lead was connected
Memo characterized by being mounted on the substrate in a state.
Ricardo.