JP3144596B2 - Thin film electronic component and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film electronic component such as a thin-film coil, a thin-film capacitor and a thin-film resistor, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Hitherto, JP-A-3-201417 and JP-A-3-240210 have proposed forming a conductor of a high-frequency coil by a thin film technique such as vapor deposition, sputtering, or ion plating.

FIG. 11 shows a case where a thin film chip coil is formed as an example of a thin film electronic component. In this figure,
Reference numeral 1 denotes an insulating substrate made of ceramic, glass, or a composite material thereof, on which an electrically conductive layer 2, an interlayer insulating layer 3, which is a coating type organic insulating resin such as polyimide, a spiral coil portion, and an end electrode portion are provided. , A conductive layer 6 having the same pattern, a conductive layer 6 having the same pattern as the conductive layer 4, and a protective film 7 are sequentially laminated. And finally,
The terminal electrode 8 is formed by plating or the like.

[0004]

When a conductive layer such as a high-frequency coil is formed of a conductive thin film by a thin film technique such as vapor deposition, sputtering, or ion plating, silver, copper, or the like having good conductivity as the conductive thin film is used. It is considered that silver and copper have a problem in adhesion to an insulating substrate such as ceramic, glass, or a composite material of these, silver is expensive, and copper is polyimide used for interlayer insulation. There is also a problem that the coating type organic insulating film is easily oxidized.

In view of the above, the present invention employs an inexpensive and highly conductive copper thin film as a main conductor thin film for securing conductivity, and has problems such as adhesion of the copper thin film to an insulating substrate and copper thin film. It is an object of the present invention to provide a highly reliable and inexpensive thin-film electronic component and a method of manufacturing the thin-film electronic component by solving different oxidation problems by providing thin films of different metals above and below a copper thin film.

[0006]

In order to achieve the above object, a thin film electronic component of the present invention is formed by laminating a chromium thin film, a copper thin film, and a nichrome thin film on an insulating substrate or an insulating film in this order.
Covering the first thin-film conductive layer and the first thin-film conductive layer
Chromium thin film, Copper thin film, Nichrome thin film on the insulating layer formed as
And a second thin film conductive layer formed by laminating the
A connection part between the first and second thin film conductive layers
In this case, the nichrome thin film of the first thin film conductive layer is removed.
And forming the second thin film on the copper thin film of the first thin film conductive layer.
The chromium thin film of the conductive layer is bonded .

The method of manufacturing a thin film electronic component according to the present invention is characterized in that a chromium thin film, a copper thin film, and a nichrome thin film are laminated in this order on an insulating substrate or an insulating film by a thin film technique.
Copper thin film and chromium thin film are etched in a predetermined pattern shape using different etchants to form a thin film conductive layer
And etching the chromium thin film, the copper
Etch the nichrome thin film portion protruding beyond the width of the thin film
Etching using a coating agent, the same width as the copper thin film
And a step of aligning them.

[0008]

According to the present invention, a copper thin film is used as a main conductor thin film for securing the conductivity of the thin film conductive layer, and the poor adhesion of the copper thin film to an insulating substrate made of ceramic, glass, or a composite material of these materials. The problem is solved by forming a chromium thin film as an underlayer of a copper thin film on an insulating substrate by a thin film technique. In addition, when a coating type organic insulating film such as polyimide is provided as an interlayer insulating or protective coating on the copper thin film, the problems of oxidation of the copper thin film and deterioration of the coating type organic insulating film are caused by the fact that the Nichrome thin film, in which copper is difficult to diffuse, is replaced by the copper thin film. The problem is solved by forming it on the thin film technology. Furthermore, when the copper thin film is formed thicker than the chromium thin film or the nichrome thin film, the etching time of the copper thin film with the etching agent becomes longer, and the width direction is etched as in the thickness direction of the copper thin film, and the width becomes narrower. As a result, the problem that the width of the copper thin film of the intermediate layer becomes narrower than that of the upper nichrome thin film etched earlier occurs.This problem is caused by etching the lower chromium thin film and then etching the upper nichrome thin film again. By adjusting the width to the width of the copper thin film. Further, the thin film conductive layers are laminated.
Connection, remove the nichrome thin film at the connection.
Thus, the resistance at the joint can be reduced.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a thin-film electronic component and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

A first embodiment of the present invention will be described with reference to FIGS. First, as shown in FIG. 1, a chromium (Cr) thin film 11 having good adhesion (adhesion) to ceramic and glass is deposited and sputtered on an insulating substrate 10 made of ceramic, glass, or a composite material thereof. Formed by a thin film technique such as ion plating, and a copper (Cu) thin film 12 is formed thereon by a similar thin film technique to be sufficiently thick to secure conductivity. (Ni-Cr) thin film 13 is formed. here,
The thickness of the chromium thin film 11 is 50 to 2000 mm, and the thickness of the copper thin film 12 is
The thickness of the Nichrome thin film 13 is several thousand to tens of thousands
It is about 2000 mm. The nichrome thin film has a composition of 80% by weight of nickel and 20% by weight of chromium.

Next, as shown in FIG. 2, a resist 15 is formed on the upper Nichrome thin film 13 in a predetermined pattern by a photolithographic technique. That is, a resist is applied on the entire surface of the nichrome thin film, and then exposed and developed to leave a resist 15 having a predetermined pattern.

Then, as shown in FIG. 3, the upper nichrome thin film 13 is etched with an etching agent (etchant) capable of melting and removing nichrome to remove portions other than those covered with the resist 15.

After etching the upper Nichrome thin film 13, the intermediate copper thin film 12 is etched with an etching agent (etchant) capable of melting and removing copper as shown in FIG. At this time, since the copper thin film 12 has a large thickness and a long etching time, it can be seen from FIG. 4 that the copper thin film is etched not only in the thickness direction but also in the width direction. Large width and overhang.)

Thereafter, the lower chromium thin film 11 is etched with an etching agent (etchant) capable of melting and removing chromium as shown in FIG.

In the state shown in FIG. 5, the upper nichrome thin film 13 is formed.
Is wider than the copper thin film 12, so that the nichrome thin film 13 is etched again with an etching agent (etchant) capable of melting and removing the nichrome to eliminate overhang of the nichrome thin film 13 as shown in FIG. The width is about the same as 12.

At this time, if a chromium thin film (same as the lower layer) is employed instead of the upper nichrome thin film, the lower chromium thin film 1 is removed when the upper overhang is removed.
However, there is a problem that the overhang cannot be removed because the upper layer is removed. However, the overhang of the upper layer can be effectively removed by forming the upper layer with the nichrome thin film 13 that can use an etching agent different from that of the lower chromium thin film 11. Can be executed. As a result, it is possible to eliminate the problem that air bubbles accumulate in the overhang portion when the interlayer insulating layer is formed using a coating type organic insulating resin such as polyimide in a later step.

Thereafter, as shown in FIG. 7, the resist 15 is stripped and removed with a stripping solution.

1 to 7, the insulating substrate 10
And a highly reliable and inexpensive thin-film conductive layer 20 having good adhesion to the substrate and free from oxidation and deterioration caused by the interlayer insulating layer. Further, the overhang of the upper Nichrome thin film 13 generated when the thickness of the copper thin film 12 is large can be removed, and the reliability can be further improved.

FIGS. 8 to 10 show a second embodiment of the present invention, in which the thin film conductive layer shown in the first embodiment and the thin film conductive layer having the same laminated structure as the first embodiment are formed as interlayer insulating layers. The case where connection is made via a contact hole is shown.

First, as shown in FIG. 8, a third layer of a chromium thin film 11, a copper thin film 12, and a nichrome thin film 13, which are sequentially formed on the insulating substrate 10 by the thin film technique in the same manner as in the first embodiment. On the first thin film conductive layer 20, an interlayer insulating layer 21 made of a coating type organic insulating resin such as polyimide is formed. In this case, the formation of the contact hole 22 in the interlayer insulating layer 21 can be performed by photolithography.

Next, the nichrome thin film 13 is etched with an etching agent (etchant) capable of melting and removing the nichrome to remove the nichrome thin film portion facing the contact hole 22 as shown in FIG.

Then, the chromium thin film 11, the copper thin film 12, and the nichrome thin film 13 are formed on the interlayer insulating layer 21 (including the contact hole 22) by the thin film technique in the same manner as in the first embodiment. Second thin-film conductive layer 2
Form 3

According to the structure of the second embodiment shown in FIGS. 8 to 10, since the nichrome thin film 13 in the contact hole 22 is removed, the copper thin film 12 of the first thin film conductive layer 20 is formed in the contact hole 22. Since the chromium thin film 11 of the second thin film conductive layer 23 is bonded to the chromium, the chromium diffuses into the copper and the copper diffuses into the chromium, causing an interdiffusion phenomenon.
The resistance at the joint can be reduced.

The configurations of the first and second embodiments can be applied to thin-film electronic components such as thin-film coils, thin-film capacitors, and thin-film resistors.

[0025]

As described above, according to the present invention,
Inexpensive and highly conductive copper thin film is adopted as the main conductor thin film to secure the conductivity of the thin film conductive layer, and the problem of the adhesion of the copper thin film to the insulating substrate is a chromium thin film below the copper thin film and a copper thin film The problem of oxidation can be solved by providing a thin film technique of a nichrome thin film on a copper thin film, and a thin-film electronic component having a highly reliable and inexpensive thin-film conductive layer can be obtained. In addition,
When laminating the thin film conductive layer, the Nichrome thin film
Reduced resistance at the junction by removing
Can be.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a step of forming a chromium thin film, a copper thin film, and a nichrome thin film on an insulating substrate in order of the first embodiment of the thin-film electronic component and the method of manufacturing the same according to the present invention.

FIG. 2 is a cross-sectional view showing a step of providing a resist on an upper nichrome thin film.

FIG. 3 is a cross-sectional view showing a step of etching an upper nichrome thin film.

FIG. 4 is a sectional view showing a step of etching a copper thin film of an intermediate layer.

FIG. 5 is a cross-sectional view showing a step of etching a lower chromium thin film.

FIG. 6 is a cross-sectional view showing a step of etching the upper nichrome thin film again.

FIG. 7 is a cross-sectional view showing a step of removing a resist.

FIG. 8 is a cross-sectional view showing a step of providing an interlayer insulating layer having a contact hole on a first thin-film conductive layer according to a second embodiment of the present invention.

FIG. 9 is a sectional view showing a step of etching a nichrome thin film facing a contact hole.

FIG. 10 is a cross-sectional view showing a step of forming a second thin-film conductive layer on the interlayer insulating layer.

FIG. 11 is a sectional structural view showing a thin-film chip coil as an example of a thin-film electronic component.

[Explanation of symbols]

 Reference Signs List 1,10 Insulating substrate 11 Chromium thin film 12 Copper thin film 13 Nichrome thin film 20,23 Thin film conductive layer 21 Interlayer insulating layer 22 Contact hole

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-60-2060 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01F 17/00-17/08 H01G 4 / 00-4/40

Claims (2)

(57) [Claims] 1. A first thin film formed by sequentially laminating a chromium thin film, a copper thin film, and a nichrome thin film on an insulating substrate or an insulating film.
A conductive layer, formed to cover the first thin film conductive layer;
The chromium thin film, copper thin film, and nichrome thin film are stacked on the insulating layer in this order.
At least a second thin-film conductive layer formed as a layer,
In the connection portion between the first and second thin film conductive layers, the first
The nichrome thin film of the thin film conductive layer of the first thin film is removed.
Chromium thin film of the second thin film conductive layer on the copper thin film of the thin film conductive layer
A thin-film electronic component having a film bonded thereto . 2. After laminating a chromium thin film, a copper thin film and a nichrome thin film in this order on an insulating substrate or an insulating film by a thin film technique, a different patterning agent is used in the order of a nichrome thin film, a copper thin film and a chromium thin film to form a predetermined pattern. Etching to form a thin film conductive layer, and after etching the chromium thin film, the width of the copper thin film
The protruding nichrome thin film portion is etched using an etching agent.
Etching to make the width approximately the same as the copper thin film
And a method for manufacturing a thin-film electronic component.