JP3102869B2 - 超薄板圧電共振子の構造 - Google Patents

超薄板圧電共振子の構造

Info

Publication number
JP3102869B2
JP3102869B2 JP02029935A JP2993590A JP3102869B2 JP 3102869 B2 JP3102869 B2 JP 3102869B2 JP 02029935 A JP02029935 A JP 02029935A JP 2993590 A JP2993590 A JP 2993590A JP 3102869 B2 JP3102869 B2 JP 3102869B2
Authority
JP
Japan
Prior art keywords
edge
resonator
case
ultra
piezoelectric resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02029935A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03235408A (ja
Inventor
孝夫 森田
修 石井
武文 黒崎
Original Assignee
東洋通信機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP02029935A priority Critical patent/JP3102869B2/ja
Application filed by 東洋通信機株式会社 filed Critical 東洋通信機株式会社
Priority to EP90914424A priority patent/EP0468051B1/en
Priority to US07/768,909 priority patent/US5218328A/en
Priority to EP94118006A priority patent/EP0644652A2/en
Priority to PCT/JP1990/001273 priority patent/WO1991012662A1/ja
Priority to DE69024207T priority patent/DE69024207T2/de
Priority to KR1019900702673A priority patent/KR940011487B1/ko
Publication of JPH03235408A publication Critical patent/JPH03235408A/ja
Application granted granted Critical
Publication of JP3102869B2 publication Critical patent/JP3102869B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP02029935A 1990-02-09 1990-02-09 超薄板圧電共振子の構造 Expired - Fee Related JP3102869B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP02029935A JP3102869B2 (ja) 1990-02-09 1990-02-09 超薄板圧電共振子の構造
US07/768,909 US5218328A (en) 1990-02-09 1990-10-02 Structure for a resonator using an ultrathin piezoelectric substrate
EP94118006A EP0644652A2 (en) 1990-02-09 1990-10-02 Structure for a resonator using an ultrathin piezoelectric substrate
PCT/JP1990/001273 WO1991012662A1 (fr) 1990-02-09 1990-10-02 Structure d'un resonateur piezoelectrique a couche ultra-mince
EP90914424A EP0468051B1 (en) 1990-02-09 1990-10-02 Structure of ultra-thin sheet piezoresonator
DE69024207T DE69024207T2 (de) 1990-02-09 1990-10-02 Struktur eines piezoelektrischen resonators aus einer ultradünnen schicht
KR1019900702673A KR940011487B1 (ko) 1990-02-09 1990-10-02 초박판 압전공진자의 구조

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02029935A JP3102869B2 (ja) 1990-02-09 1990-02-09 超薄板圧電共振子の構造

Publications (2)

Publication Number Publication Date
JPH03235408A JPH03235408A (ja) 1991-10-21
JP3102869B2 true JP3102869B2 (ja) 2000-10-23

Family

ID=12289845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02029935A Expired - Fee Related JP3102869B2 (ja) 1990-02-09 1990-02-09 超薄板圧電共振子の構造

Country Status (6)

Country Link
US (1) US5218328A (enExample)
EP (2) EP0468051B1 (enExample)
JP (1) JP3102869B2 (enExample)
KR (1) KR940011487B1 (enExample)
DE (1) DE69024207T2 (enExample)
WO (1) WO1991012662A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143600A (en) 1995-04-20 2000-11-07 Nec Corporation Method of fabricating a semiconductor memory device having bit line directly held in contact through contact with impurity region in self-aligned manner
US6514834B2 (en) 1994-03-14 2003-02-04 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a low leakage current

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5617065A (en) * 1995-06-29 1997-04-01 Motorola, Inc. Filter using enhanced quality factor resonator and method
EP1326293A1 (en) * 2000-07-17 2003-07-09 Nagaura, Kumiko Piezoelectric device and acousto-electric transducer and method for manufacturing the same
JP2004080711A (ja) * 2002-08-22 2004-03-11 Nippon Dempa Kogyo Co Ltd 水晶振動子の保持構造
US7098574B2 (en) * 2002-11-08 2006-08-29 Toyo Communication Equipment Co., Ltd. Piezoelectric resonator and method for manufacturing the same
RU2234186C1 (ru) * 2003-04-24 2004-08-10 Мацак Андрей Николаевич Высокочастотный пьезоэлемент
US7568377B2 (en) * 2005-07-28 2009-08-04 University Of South Florida High frequency thickness shear mode acoustic wave sensor for gas and organic vapor detection
JP2008078717A (ja) * 2006-09-19 2008-04-03 Nec Tokin Corp ノイズフィルタおよびスイッチング電源
US8618722B2 (en) * 2009-09-18 2013-12-31 Daishinku Corporation Piezoelectric resonator plate and manufacturing method for piezoelectric resonator plate
CN116248068B (zh) * 2022-09-28 2024-03-08 泰晶科技股份有限公司 一种超高频at切石英晶片及制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3453458A (en) * 1965-04-19 1969-07-01 Clevite Corp Resonator supporting structure
US3694677A (en) * 1971-03-03 1972-09-26 Us Army Vhf-uhf piezoelectric resonators
JPS5312292A (en) * 1976-07-21 1978-02-03 Seiko Instr & Electronics Ltd Thickness slide crystal vibrator
JPS54107293A (en) * 1978-02-10 1979-08-22 Nec Corp Crystal oscillator
FR2527865A1 (fr) * 1982-06-01 1983-12-02 Cepe Resonateur piezo-electrique a haute frequence et son procede de fabrication
JPS60232710A (ja) * 1984-05-01 1985-11-19 Murata Mfg Co Ltd 圧電振動子
JPS613513A (ja) * 1984-06-18 1986-01-09 Nippon Dempa Kogyo Co Ltd 圧電振動子
JP2643180B2 (ja) * 1987-09-21 1997-08-20 日本電気株式会社 モノリシック集積回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6514834B2 (en) 1994-03-14 2003-02-04 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a low leakage current
US6143600A (en) 1995-04-20 2000-11-07 Nec Corporation Method of fabricating a semiconductor memory device having bit line directly held in contact through contact with impurity region in self-aligned manner

Also Published As

Publication number Publication date
EP0468051A1 (en) 1992-01-29
EP0468051B1 (en) 1995-12-13
DE69024207D1 (de) 1996-01-25
KR940011487B1 (ko) 1994-12-19
EP0644652A3 (enExample) 1995-04-05
KR920702072A (ko) 1992-08-12
EP0468051A4 (en) 1992-05-13
DE69024207T2 (de) 1996-05-02
WO1991012662A1 (fr) 1991-08-22
JPH03235408A (ja) 1991-10-21
EP0644652A2 (en) 1995-03-22
US5218328A (en) 1993-06-08

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