JP2957205B2 - エピタキシヤルおよび／または高組織化成長の、異相の少い高Ｔｃ酸化物超伝導体フイルムを基板上に製造する方法および装置 - Google Patents

エピタキシヤルおよび／または高組織化成長の、異相の少い高Ｔｃ酸化物超伝導体フイルムを基板上に製造する方法および装置

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Publication number
JP2957205B2
JP2957205B2 JP1263156A JP26315689A JP2957205B2 JP 2957205 B2 JP2957205 B2 JP 2957205B2 JP 1263156 A JP1263156 A JP 1263156A JP 26315689 A JP26315689 A JP 26315689A JP 2957205 B2 JP2957205 B2 JP 2957205B2
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Japan
Prior art keywords
substrate
oxide superconductor
electron beam
target
electron
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP1263156A
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English (en)
Japanese (ja)
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JPH02164793A (ja
Inventor
クリストフ・シユルトハイス
ヨツヘン・ゲールク
ハンス・カロヴ
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FUORUSHUNGUSUTSUENTORUMU KAARUSURUUE GmbH
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FUORUSHUNGUSUTSUENTORUMU KAARUSURUUE GmbH
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Publication of JPH02164793A publication Critical patent/JPH02164793A/ja
Application granted granted Critical
Publication of JP2957205B2 publication Critical patent/JP2957205B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1263156A 1988-10-10 1989-10-11 エピタキシヤルおよび／または高組織化成長の、異相の少い高Ｔｃ酸化物超伝導体フイルムを基板上に製造する方法および装置 Expired - Lifetime JP2957205B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3834402A DE3834402C1 (enExample) 1988-10-10 1988-10-10
DE3834402.5 1988-10-10

Publications (2)

Publication Number Publication Date
JPH02164793A JPH02164793A (ja) 1990-06-25
JP2957205B2 true JP2957205B2 (ja) 1999-10-04

Family

ID=6364750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1263156A Expired - Lifetime JP2957205B2 (ja) 1988-10-10 1989-10-11 エピタキシヤルおよび／または高組織化成長の、異相の少い高Ｔｃ酸化物超伝導体フイルムを基板上に製造する方法および装置

Country Status (4)

Country Link
US (1) US5028584A (enExample)
EP (1) EP0363554B1 (enExample)
JP (1) JP2957205B2 (enExample)
DE (1) DE3834402C1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0610175A1 (en) * 1990-03-16 1994-08-17 Conductus, Inc. High temperature superconducting films on aluminum oxide substrates
DE4035073C1 (enExample) * 1990-11-05 1992-03-05 Battelle-Institut Ev, 6000 Frankfurt, De
DE4208764C2 (de) * 1992-03-19 1994-02-24 Kernforschungsz Karlsruhe Gasgefüllter Teilchenbeschleuniger
DE4226229A1 (de) * 1992-08-07 1994-02-10 Igenwert Gmbh Verfahren und Vorrichtung zur Impulsbeaufschlagung einer Festkörperoberfläche, insbesondere einer Werkstoffoberfläche
US5660746A (en) * 1994-10-24 1997-08-26 University Of South Florida Dual-laser process for film deposition
US6004881A (en) * 1997-04-24 1999-12-21 The United States Of America As Represented By The Secretary Of The Air Force Digital wet etching of semiconductor materials
US5858478A (en) * 1997-12-02 1999-01-12 The Aerospace Corporation Magnetic field pulsed laser deposition of thin films
JP3411497B2 (ja) * 1998-03-25 2003-06-03 科学技術振興事業団 Ｗ超微粒子とその製造方法、およびｗナノ結晶薄膜
US6491759B1 (en) * 2000-03-14 2002-12-10 Neocera, Inc. Combinatorial synthesis system
US20030054105A1 (en) * 2001-08-14 2003-03-20 Hammond Robert H. Film growth at low pressure mediated by liquid flux and induced by activated oxygen
US20050000952A1 (en) * 2003-05-19 2005-01-06 Harter Donald J. Focusless micromachining
KR100621786B1 (ko) * 2004-05-12 2006-09-14 고등기술연구원연구조합 용융액적 투사를 이용하는 고밀도 에너지빔 용접 시스템
CN101970709A (zh) * 2007-12-19 2011-02-09 卡洛·塔利亚尼 用于沉积金属氧化物膜的方法
IT1391802B1 (it) * 2008-11-21 2012-01-27 Consiglio Nazionale Ricerche Metodo di realizzazione di celle solari multistrato a film sottile
RU2462009C1 (ru) * 2011-06-08 2012-09-20 Мурадин Абубекирович Кумахов Способ изменения направления движения пучка ускоренных заряженных частиц, устройство для осуществления этого способа, источник электромагнитного излучения, линейный и циклический ускорители заряженных частиц, коллайдер и средство для получения магнитного поля, создаваемого током ускоренных заряженных частиц

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2804393C2 (de) * 1978-02-02 1987-01-02 Jens Prof. Dr. 8520 Buckenhof Christiansen Verfahren zum Erzeugen und Beschleunigen von Elektronen bzw. Ionen in einem Entladungsgefäß, sowie dazugehöriger Teilchenbeschleuniger und ferner dazugehörige Anwendungen des Verfahrens
US4863581A (en) * 1987-02-12 1989-09-05 Kawasaki Steel Corp. Hollow cathode gun and deposition device for ion plating process
US4874741A (en) * 1988-04-14 1989-10-17 The Research Foundation Of State University Of New York Non-enhanced laser evaporation of oxide superconductors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Ｔ．Ｖｅｎｋａｔｅｓａｎ ｅｔ ａｌ．，"Ｏｂｓｅｒｖａｔｉｏｎ ｏｆ ｔｗｏ ｄｉｓｔｉｎｃｔ ｃｏｍｐｏｎｅｎｔｓ ｄｕｒｉｎｇ ｐｕｌｓｅｄ ｌａｓｅｒ ｄｅｐｏｓｉｔｉｏｎ ｏｆ ｈｉｇｈ Ｔｃ ｓｕｐｅｒｃｏｎｄｕｃｔｉｎｇ ｆｉｌｍｓ，"Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．，Ｖｏｌ．５２，Ｎｏ．１４，４ Ａｐｒｉｌ １９８８，ｐｐ．１１９３−１１９５

Also Published As

Publication number Publication date
EP0363554B1 (de) 1994-04-13
US5028584A (en) 1991-07-02
EP0363554A3 (en) 1990-07-04
EP0363554A2 (de) 1990-04-18
DE3834402C1 (enExample) 1989-05-03
JPH02164793A (ja) 1990-06-25

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