JP2948412B2 - Method for manufacturing side-emitting semiconductor light emitting device - Google Patents
Method for manufacturing side-emitting semiconductor light emitting deviceInfo
- Publication number
- JP2948412B2 JP2948412B2 JP4116305A JP11630592A JP2948412B2 JP 2948412 B2 JP2948412 B2 JP 2948412B2 JP 4116305 A JP4116305 A JP 4116305A JP 11630592 A JP11630592 A JP 11630592A JP 2948412 B2 JP2948412 B2 JP 2948412B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- light emitting
- material plate
- substrate
- synthetic resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明は、側面を発光するように
した発光ダイオード又は半導体レーザ等の半導体発光素
子を製造する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor light emitting device such as a light emitting diode or a semiconductor laser having a side surface emitting light.
【０００２】[0002]
【従来の技術】一般に、この種の側面発光型の半導体発
光素子１は、例えば、実開昭６３−１８８９６７号公報
又は実開昭６４−８７５９号公報等に記載され、且つ、
図１〜図４に示すように、基板２の上面に、少なくとも
一対のリード電極パターン３，４を形成し、その一方の
リード電極パターン３の上面に、半導体発光チップ５を
マウントしたのち、この半導体発光チップ５と他方のリ
ード電極パターン４との間を、金属線６にてワイヤーボ
ンディングし、次いで、前記基板２の上面に、少なくと
も一つの側面に開口部７ａを備えて成る非透明体製のカ
バー体７を、前記半導体発光チップ５及び金属線６を覆
うように装着し、このカバー体７の内部に、透明な合成
樹脂８を充填して、半導体発光チップ５及び金属線６の
部分を密封し、この透明合成樹脂８のうち前記カバー体
７の開口部７ａ箇所における露出面８ａから光を発射す
ると言う構成している。なお、符号９は、一方のリード
電極パターン３に対する接続用端子を、符号１０は、他
方のリード電極パターン４に対する接続用端子を各々示
す。2. Description of the Related Art In general, this type of side-emitting type semiconductor light emitting device 1 is described in, for example, Japanese Utility Model Application Laid-Open No. 63-188967 or Japanese Utility Model Application Laid-Open No. 64-8759, and
As shown in FIGS. 1 to 4, at least a pair of lead electrode patterns 3 and 4 are formed on the upper surface of the substrate 2, and the semiconductor light emitting chip 5 is mounted on the upper surface of one of the lead electrode patterns 3. A wire is bonded between the semiconductor light emitting chip 5 and the other lead electrode pattern 4 with a metal wire 6, and then a non-transparent body having an opening 7 a on at least one side surface on the upper surface of the substrate 2. Is mounted so as to cover the semiconductor light emitting chip 5 and the metal wire 6, and the inside of the cover 7 is filled with a transparent synthetic resin 8, so that the portion of the semiconductor light emitting chip 5 and the metal wire 6 is formed. Is sealed, and light is emitted from the exposed surface 8a of the transparent synthetic resin 8 at the opening 7a of the cover body 7. Reference numeral 9 denotes a connection terminal for one lead electrode pattern 3, and reference numeral 10 denotes a connection terminal for the other lead electrode pattern 4.
【０００３】[0003]
【発明が解決しようとする課題】ところで、従来、前記
した側面発光型の半導体発光素子１を製造するに際して
は、基板２及びカバー体７を製造すること、基板２の上
面にカバー体７を固着すること、このカバー体７の内部
に透明合成樹脂８を充填することの各工程を、半導体発
光素子１の一個ずつについて行うと共に、前記透明合成
樹脂８における露出面８ａを平面状に仕上げることの工
程をも、半導体発光素子１の一個ずつについて行うよう
にしているから、生産性がきわめて低くて、製造コスト
が大幅にアップすると言う問題があった。Conventionally, when manufacturing the above-mentioned side emission type semiconductor light emitting device 1, the substrate 2 and the cover 7 are manufactured, and the cover 7 is fixed to the upper surface of the substrate 2. The steps of filling the inside of the cover 7 with the transparent synthetic resin 8 are performed for each of the semiconductor light emitting elements 1, and the exposed surface 8 a of the transparent synthetic resin 8 is finished in a planar shape. Since the process is performed for each semiconductor light emitting element 1 one by one, there is a problem that productivity is extremely low and manufacturing cost is significantly increased.
【０００４】本発明は、前記した各工程を複数個の半導
体発光素子について同時に行うようにすることによっ
て、生産性の向上を図ることを技術的課題とするもので
ある。[0004] It is a technical object of the present invention to improve the productivity by simultaneously performing the above-described steps for a plurality of semiconductor light emitting devices.
【０００５】[0005]
【課題を解決するための手段】この技術的課題を達成す
るため本発明は、「一つの半導体発光素子を構成する基
板の複数個を一体的に連接して成る基板用素材板には、
前記各基板の箇所の各々にリード電極パターンを形成す
ると共に半導体発光チップをマウントする一方、一つの
半導体発光素子を構成するカバー体の複数個を一体的に
連接したカバー体用素材板には、前記各カバー体の箇所
の各々に凹所を形成し、この各凹所内に液状の合成樹脂
を充填し、次いで、前記基板用素材板及び前記カバー体
用素材板を、これらを互いに重ね合わせ接合して前記液
状の合成樹脂を硬化したのち、一つの半導体発光素子ご
とに、前記硬化した合成樹脂の一部がカバー体外に露出
するように切断する。」という方法を採用した。In order to achieve this technical object, the present invention provides a method of manufacturing a semiconductor light-emitting device comprising:
While forming a lead electrode pattern on each of the portions of each substrate and mounting the semiconductor light emitting chip, a cover body material plate integrally connected to a plurality of cover bodies constituting one semiconductor light emitting element, A recess is formed at each of the portions of the cover body, a liquid synthetic resin is filled in each recess, and then the base material plate and the cover body material are overlapped and joined together. And the liquid
After curing the synthetic resin in a shape, the semiconductor resin is cut for each semiconductor light emitting element so that a part of the cured synthetic resin is exposed outside the cover body. Method was adopted.
【０００６】[0006]
【作 用】このようにすると、一つの半導体発光素子
を構成する基板、及び同じく一つの半導体発光素子を構
成するカバー体を製造すること、前記基板の上面にカバ
ー体を固着すること、このカバー体の内部に液体の合成
樹脂を充填することの各工程を、複数個の基板を一体的
に連接した基板用素材板と、複数個のカバー体を一体的
に連接したカバー体用素材板によって、半導体発光素子
の複数個ずつについて行うことができると共に、前記硬
化した合成樹脂における露出面を平面状に仕上げること
の工程を、基板用素材板及びカバー体用素材板を一つの
半導体発光素子ごと切断することで同時に行うことがで
きる。In this manner, a substrate constituting one semiconductor light emitting element and a cover body also constituting one semiconductor light emitting element are manufactured, and the cover body is fixed to the upper surface of the substrate. Each step of filling the inside of the body with liquid synthetic resin is performed by a substrate material plate that integrally connects a plurality of substrates and a cover material plate that integrally connects a plurality of cover bodies. , it is possible to perform the one by a plurality of semiconductor light-emitting device, the hard
The step of finishing the exposed surface of the converted synthetic resin into a planar shape can be performed simultaneously by cutting the material plate for the substrate and the material plate for the cover together with one semiconductor light emitting element.
【０００７】[0007]
【発明の効果】従って、本発明によると、側面発光型の
半導体発光素子を製造する場合において、その生産性を
大幅にアップすることができ、製造コストの低減を達成
できる効果を有する。Therefore, according to the present invention, in the case of manufacturing a side emission type semiconductor light emitting device, the productivity can be greatly increased, and the manufacturing cost can be reduced.
【０００８】[0008]
【実施例】以下、本発明の実施例を、前記図１〜図４に
示す構造の側面発光型半導体発光素子１を製造する場合
に適用した図面（図５〜図１５）について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described with reference to the drawings (FIGS. 5 to 15) in which the embodiment of the present invention is applied to the manufacture of the side emission type semiconductor light emitting device 1 having the structure shown in FIGS.
【０００９】図５及び図６において符号Ａは、複数枚の
基板２を縦方向及び横方向に並べて一体的に連接して成
る絶縁体製の基板用素材板を示す。但し、この場合にお
いて、上から第１列目における各基板２と第２列目にお
ける各基板２とは互いに相対向し、第２列目の各基板２
と第３列目の各基板２とは背中合わせになるようにして
配列されている。In FIG. 5 and FIG. 6, reference numeral A denotes a substrate material plate made of an insulator formed by connecting a plurality of substrates 2 in a vertical direction and a horizontal direction and integrally connecting them. However, in this case, each substrate 2 in the first column and each substrate 2 in the second column are opposed to each other from the top, and each substrate 2 in the second column is
And the substrates 2 in the third row are arranged back to back.
【００１０】また、前記基板用素材板Ａには、縦横に並
べた各基板２のコーナーの部分に、貫通孔Ａ1 が穿設さ
れている。更にまた、符号Ａ2 は、各基板２を縦方向に
区分する縦切断線を、符号Ａ3 は、各基板２を横方向に
区分する横切断線を示す。Further, in the above substrate material for plate A, the corner portion of each substrate 2 arranged vertically and horizontally, the through hole A 1 is drilled. Further, reference numeral A 2 indicates a vertical cutting line that divides each substrate 2 in the vertical direction, and reference numeral A 3 indicates a horizontal cutting line that divides each substrate 2 in the horizontal direction.
【００１１】そして、この基板用素材板Ａの表面には、
各基板２の箇所の各々に、図７及び図８に示すように、
リード電極パターン３，４を形成すると共に、その各貫
通孔Ａ1 の内面に、接続用端子９，１０を構成するため
にスルーホール状の電極膜１１を形成する。Then, on the surface of the substrate material plate A,
As shown in FIG. 7 and FIG. 8,
To form a lead electrode patterns 3 and 4, the inner surface of the through-holes A 1, to form a through-hole-shaped electrode film 11 for forming the connection terminals 9 and 10.
【００１２】次いで、図９及び図１０に示すように、前
記各一方のリード電極パターン３の各々に対して半導体
発光チップ５をマウントしたのち、この各半導体発光チ
ップ５と他方のリード電極パターン４との各々間を、金
属線６にてワイヤーボンディングする。Next, as shown in FIGS. 9 and 10, a semiconductor light emitting chip 5 is mounted on each of the one lead electrode patterns 3, and then each semiconductor light emitting chip 5 and the other lead electrode pattern 4 are mounted. Is wire-bonded with a metal wire 6.
【００１３】一方、図１１〜図１３において符号Ｂは、
複数個のカバー体７を縦方向及び横方向に並べて一体的
に連接して成る非透明合成樹脂製のカバー体用素材板を
示し、このカバー体用素材板Ｂには、各カバー体７の箇
所の各々に、凹所Ｂ1 が形成されている。但し、この場
合において、上から第１列目における各カバー体７の凹
所Ｂ1 と第２列目における各カバー体７の凹所Ｂ1 とは
連続している。また、符号Ｂ2 は、各カバー体７を縦方
向に区分する縦切断線を、符号Ｂ3 は、各カバー体７を
横方向に区分する横切断線を示す。On the other hand, in FIGS.
A cover body material plate made of a non-transparent synthetic resin is shown in which a plurality of cover bodies 7 are arranged in the longitudinal direction and the horizontal direction and integrally connected to each other. each location, the recess B 1 is formed. However, in this case, it is continuous from the recess B 1 of each cover member 7 recess B 1 of each cover member 7 in the first row from the top and in the second column. Reference numeral B 2 indicates a vertical cutting line that divides each cover body 7 in the vertical direction, and reference numeral B 3 indicates a horizontal cutting line that divides each cover body 7 in the horizontal direction.
【００１４】そして、前記カバー体用素材板Ｂを、その
各凹所Ｂ1 を上向きにした状態で、各凹所Ｂ1 内の各々
に、図１４に示すように、エポキシ樹脂等の透明合成樹
脂８を液体の状態で充填する一方、前記基板用素材板Ａ
を、下向きの状態にして、前記カバー体用素材板Ｂに対
して重ね合わせることにより、前記基板用素材板Ａと前
記カバー体用素材板Ｂとを、図１５及び図１６に示すよ
うに、一体的に接合すると共に、前記液状の状態で充填
した透明合成樹脂８を硬化させる。[0014] Then, the cover member for the blank B, in a state in which the respective recess B 1 upwards, in each of the recesses B 1, as shown in FIG. 14, a transparent synthetic such as epoxy resin While the resin 8 is filled in a liquid state, the substrate material plate A
In a downward state, and superimposed on the cover body material plate B, the substrate material plate A and the cover body material plate B, as shown in FIGS. Integrally joined and filled in the liquid state
The transparent synthetic resin 8 thus cured is cured.
【００１５】この場合において、基板用素材板Ａとカバ
ー体用素材板Ｂとの一体的な接合は、その両者を接着剤
にて貼り合わせるようにしても良いが、前記カバー体用
素材板Ｂにおける各凹所Ｂ1 内に充填したエポキシ樹脂
等の透明合成樹脂８を、液体のままで接着剤として貼り
合わせるようにしても良いのである。In this case, the substrate material plate A and the cover material plate B may be integrally joined together by bonding them together with an adhesive. a transparent synthetic resin 8 such as epoxy resin filled in the recess B 1 in, it's may be bonded as an adhesive remains liquid.
【００１６】次いで、前記のように一体的に接合した基
板用素材板Ａと前記カバー体用素材板Ｂとを、その各々
における縦切断線Ａ2 ，Ｂ2 及び横切断線Ａ3 ，Ｂ3 に
沿って薄い刃カッターＣ等にて、一つの半導体発光素子
１ごとに切断するのであり、この切断により、硬化した
透明合成樹脂８における一部がカバー体７外に露出し、
露出面８ａになるから、前記図１〜図４に示すような半
導体発光素子１の複数個を同時に製造することができる
のである。Next, the substrate material plate A and the cover body material plate B integrally joined as described above are separated from each other by vertical cutting lines A 2 , B 2 and horizontal cutting lines A 3 , B 3. The semiconductor light-emitting element 1 is cut for each semiconductor light-emitting element 1 by a thin blade cutter C or the like. By this cutting, a part of the cured transparent synthetic resin 8 is exposed outside the cover body 7.
Since it becomes the exposed surface 8a, a plurality of the semiconductor light emitting devices 1 as shown in FIGS. 1 to 4 can be manufactured at the same time.
【００１７】なお、前記カバー体用素材板Ｂの表裏両面
のうち凹所Ｂ1 を設けない裏面には、当該カバー体用素
材板Ｂにおける各縦切断線Ｂ2 及び各横切断線Ｂ3 の箇
所に、切断用溝Ｂ2 ′，Ｂ3 ′を、前記縦切断線Ｂ2 及
び横切断線Ｂ3 に沿って延びるように予め形成するよう
にしても良いのである。また、前記各凹所Ｂ1 の内面
に、半導体発光チップ５からの光を、硬化した透明合成
樹脂８における一側面８ａに向かうようにした光の反射
膜を形成するようにしても良いのである。[0017] Note that the rear surface is not provided a recess B 1 of the front and back surfaces of the blank B for the cover member, each vertical cutting lines B 2 and the transversal cuts B 3 in the blank B for the cover body The cutting grooves B 2 ′ and B 3 ′ may be formed in advance at the locations so as to extend along the vertical cutting line B 2 and the horizontal cutting line B 3 . Moreover, the the inner surface of the recess B 1, the light from the semiconductor light emitting chip 5 is the may be formed a reflective film of the light to be directed to one side 8a of the cured transparent synthetic resin 8 .
【００１８】更にまた、前記実施例は、基板用素材板Ａ
における第１列目の各基板２と第２列目の各基板２を相
対向するように配設することによって、カバー体用素材
板Ｂの第１列目における各カバー体７の凹所Ｂ1 と第２
列目におけるカバー体７の凹所Ｂ1 とを連通するように
構成した場合を示したが、本発明はこれに限らず、基板
用素材板Ａにおける各基板２を同じ向きに配設する一
方、カバー体用素材板Ｂの各カバー体７における凹所Ｂ
1 を、各カバー体７の各々について独立した形態にし、
切断に際して、各凹所Ｂ1 内に液状で充填して硬化した
透明合成樹脂８の一部がカバー体７の外に露出するよう
に切断すると言う構成にしても良いのである。Further, the above-described embodiment is characterized in that the substrate material plate A
The substrate B of the first row and the substrate 2 of the second row are disposed so as to face each other, so that the recess B of each cover body 7 in the first row of the cover body material plate B is provided. 1 and 2
Shows the case that is configured to communicate the recess B 1 of the cover member 7 in the th column, while the present invention is not limited thereto, disposing the respective substrate 2 in the material plate A substrate in the same direction Recess B in each cover body 7 of the cover body material plate B
1 in an independent form for each of the cover bodies 7,
Upon cleavage, is the part of <br/> transparent synthetic resin 8 which is cured is filled with liquid each recess B 1 may be configured to refer to cut so as to be exposed to the outside of the cover member 7.
【００１９】加えて、前記実施例は、側面発光型の発光
ダイオードを製造する場合であったが、本発明は、側面
発光型の半導体レーザ等のようなその他の発光素子の製
造にも適用できることは言うまでもない。In addition, although the above embodiment is directed to the manufacture of a side-emitting type light emitting diode, the present invention can be applied to the manufacture of other light emitting devices such as a side emission type semiconductor laser. Needless to say.
【図１】側面発光型半導体発光素子の縦断正面図であ
る。FIG. 1 is a vertical sectional front view of a side emission type semiconductor light emitting device.
【図２】図１のII−II視断面図である。FIG. 2 is a sectional view taken along line II-II of FIG.
【図３】図１の平面図である。FIG. 3 is a plan view of FIG. 1;
【図４】図１のIV−IV視平面図である。FIG. 4 is a plan view as viewed from IV-IV in FIG. 1;
【図５】基板用素材板の平面図である。FIG. 5 is a plan view of a substrate material plate.
【図６】図５のVI−VI視断面図である。6 is a sectional view taken along line VI-VI of FIG.
【図７】基板用素材板の表面にリード電極パターンを形
成したときの平面図である。FIG. 7 is a plan view when a lead electrode pattern is formed on the surface of a substrate material plate.
【図８】図７のVIII−VIII視断面図である。8 is a sectional view taken along line VIII-VIII of FIG.
【図９】基板用素材板の表面に半導体発光チップをマウ
ントしたのちワイヤーボンディングしたときの平面図で
ある。FIG. 9 is a plan view when a semiconductor light emitting chip is mounted on the surface of a substrate material plate and then wire-bonded.
【図１０】図９のＸ−Ｘ視断面図である。FIG. 10 is a sectional view taken along line XX of FIG. 9;
【図１１】カバー体用素材板の平面図である。FIG. 11 is a plan view of a cover body material plate.
【図１２】図１１のXII −XII 視断面図である。12 is a sectional view taken along the line XII-XII in FIG.
【図１３】図１１のXIII−XIII視断面図である。13 is a sectional view taken along the line XIII-XIII of FIG.
【図１４】カバー用素材板における各凹所内に透明合成
樹脂を充填したときの断面図である。FIG. 14 is a cross-sectional view when a transparent synthetic resin is filled in each recess in the cover material plate.
【図１５】基板用素材板とカバー用素材板とを接合した
ときにおける前記図１３と同じ箇所の断面図である。FIG. 15 is a cross-sectional view of the same place as in FIG. 13 when the substrate material plate and the cover material plate are joined.
【図１６】基板用素材板とカバー用素材板とを接合した
ときにおける前記図１２と同じ箇所の断面図である。FIG. 16 is a cross-sectional view of the same place as in FIG. 12 when the substrate material plate and the cover material plate are joined.
１ 側面発光型半導体発光素子 ２ 基板 ３，４ リード電極パターン ５ 半導体発光チップ ６ 金属線 ７ カバー体 ８ 透明合成樹脂 ８ａ 透明合成樹脂の一側面 Ａ 基板用素材板 Ａ1 貫通孔 Ｂ カバー体用素材板 Ｂ1 凹所 Ａ2 ，Ｂ2 縦切断線 Ａ3 ，Ｂ3 横切断線DESCRIPTION OF SYMBOLS 1 Side emission type semiconductor light emitting element 2 Substrate 3, 4 Lead electrode pattern 5 Semiconductor light emitting chip 6 Metal wire 7 Cover body 8 Transparent synthetic resin 8a One side of transparent synthetic resin A Board material plate A 1 Through hole B Cover material Plate B 1 recess A 2 , B 2 vertical cutting line A 3 , B 3 horizontal cutting line
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 33/00 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 33/00
Claims (1)
数個を一体的に連接して成る基板用素材板には、前記各
基板の箇所の各々にリード電極パターンを形成すると共
に半導体発光チップをマウントする一方、一つの半導体
発光素子を構成するカバー体の複数個を一体的に連接し
たカバー体用素材板には、前記各カバー体の箇所の各々
に凹所を形成し、この各凹所内に液状の合成樹脂を充填
し、次いで、前記基板用素材板及び前記カバー体用素材
板を、これらを互いに重ね合わせ接合して前記液状の合
成樹脂を硬化したのち、一つの半導体発光素子ごとに、
前記硬化した合成樹脂の一部がカバー体外に露出するよ
うに切断することを特徴とする側面発光型の半導体発光
素子を製造する方法。1. A substrate material plate comprising a plurality of substrates integrally forming a semiconductor light emitting element, wherein a lead electrode pattern is formed at each of the portions of each substrate, and a semiconductor light emitting chip is formed. On the other hand, on a cover body material plate in which a plurality of cover bodies constituting one semiconductor light emitting element are integrally connected, a recess is formed at each of the cover bodies. After filling the place with a liquid synthetic resin, the substrate material plate and the cover body material plate are overlapped and joined together to cure the liquid synthetic resin. For each semiconductor light emitting element,
A method of manufacturing a side emission type semiconductor light emitting device, comprising cutting the synthetic resin so that a part of the cured synthetic resin is exposed outside the cover body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4116305A JP2948412B2 (en) | 1992-05-08 | 1992-05-08 | Method for manufacturing side-emitting semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4116305A JP2948412B2 (en) | 1992-05-08 | 1992-05-08 | Method for manufacturing side-emitting semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05315651A JPH05315651A (en) | 1993-11-26 |
| JP2948412B2 true JP2948412B2 (en) | 1999-09-13 |
Family
ID=14683727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4116305A Expired - Fee Related JP2948412B2 (en) | 1992-05-08 | 1992-05-08 | Method for manufacturing side-emitting semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2948412B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004087973A (en) * | 2002-08-28 | 2004-03-18 | Sharp Corp | Surface-mount side surface-emitting diode and its manufacturing method |
| JP2005217369A (en) * | 2004-02-02 | 2005-08-11 | Three M Innovative Properties Co | Adhesive sheet for light-emitting-diode device, and light-emitting-diode device |
| US7646088B2 (en) | 2004-02-02 | 2010-01-12 | 3M Innovative Properties Company | Adhesive sheet for light-emitting diode device and light-emitting diode device |
| US7973403B2 (en) | 2004-02-02 | 2011-07-05 | 3M Innovative Properties Company | Adhesive sheet for light-emitting diode device and light-emitting diode device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05315651A (en) | 1993-11-26 |
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