JP2934804B2 - Shape processing and processing method of lead frame for semiconductor device - Google Patents

Shape processing and processing method of lead frame for semiconductor device

Info

Publication number
JP2934804B2
JP2934804B2 JP15403092A JP15403092A JP2934804B2 JP 2934804 B2 JP2934804 B2 JP 2934804B2 JP 15403092 A JP15403092 A JP 15403092A JP 15403092 A JP15403092 A JP 15403092A JP 2934804 B2 JP2934804 B2 JP 2934804B2
Authority
JP
Japan
Prior art keywords
processing
shape
group
lead frame
shape processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP15403092A
Other languages
Japanese (ja)
Other versions
JPH06318659A (en
Inventor
健一 福田
憲一 石松
功 米永
宗也 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MITSUI HAITETSUKU KK
Original Assignee
MITSUI HAITETSUKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MITSUI HAITETSUKU KK filed Critical MITSUI HAITETSUKU KK
Priority to JP15403092A priority Critical patent/JP2934804B2/en
Publication of JPH06318659A publication Critical patent/JPH06318659A/en
Application granted granted Critical
Publication of JP2934804B2 publication Critical patent/JP2934804B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置用リードフ
レームの形状加工及び処理方法に係り、更に詳細には、
異種形状加工及び処理工程群を適切に組み合わせて連結
した形状加工及び処理ラインを構成して、該群間の搬送
作業を効率化し、搬送で生じる損傷を防ぐと共に多様化
した品質、使用の条件にフレキシビリティに対応して高
品質のリードフレームを提供する半導体装置用リードフ
レームの形状加工及び処理方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for processing and processing a lead frame for a semiconductor device.
Appropriate combination of different shape processing and processing process groups to form a linked shape processing and processing line, streamline the transfer work between the groups, prevent damage caused by transfer, and meet diversified quality and use conditions The present invention relates to a shape processing and processing method for a lead frame for a semiconductor device which provides a high quality lead frame corresponding to flexibility.

【0002】[0002]

【従来の技術】従来の半導体装置用リードフレームの形
状加工及び処理方法は、図4〜図7に示すように、第1
の形状加工装置48の上流に薄板条材を装着し、水平状
態で繰り出された該薄板条材を第1の形状加工装置48
に間欠搬送手段42でプレス装置43に装着して一体化
した形状加工金型装置44内に間欠供給しつつインナー
リード先端部の形成を残して所要の形状を形成する加工
を行い、巻き取り手段47でコイル状に巻き取る工程
と、このコイル状の薄板条材を熱処理装置59の上流に
装着して熱処理装置59に向かって繰り出し、熱処理装
置59の上流及び下流に備えたブライダル手段で前記薄
板条材に所要のテンションを付与しつつ前記熱処理装置
59内を走行して滞有した内部残留応力を除去する熱処
理を行い、巻き取り手段58でコイル状に巻き取る工程
と、前記工程で形成したコイル状の薄板条材をめっき装
置68の上流に装着して、めっき装置68に向かって繰
り出し、前記めっき装置68内を走行しつつ前処理6
2、めっき処理63、後処理64の所定の処理を行い、
巻き取り手段67にコイル状に巻き取る工程と、前記工
程で形成したコイル状薄板条材を第2の形状加工装置8
8の上流に装着し、第2の形状加工装置88に向かって
水平状態で繰り出された該薄板条材を第2の形状加工装
置88に備えた間欠搬送手段82でプレス装置83に装
着した形状加工金型装置84内に間欠供給しつつインナ
ーリード先端部を所要の形状に形成する加工を行い、巻
き取り手段87でコイル状に巻き取る工程との順序で加
工、処理を行うバッチ方式でのリードフレームの形状加
工及び処理方法が一般的である。
2. Description of the Prior Art As shown in FIGS.
A thin strip material is mounted upstream of the shape processing device 48, and the thin strip material fed out in a horizontal state is placed in the first shape processing device 48.
In the intermittent conveying means 42, the processing is carried out to form a required shape while forming the leading end of the inner lead while intermittently supplying it to the integrated shape processing die apparatus 44 by mounting it on the press device 43 and winding means. Winding in a coil shape at 47; mounting the coiled thin strip material upstream of the heat treatment apparatus 59 and feeding it out toward the heat treatment apparatus 59; and bridging the thin sheet material by bridal means provided upstream and downstream of the heat treatment apparatus 59. A step of performing heat treatment for removing the retained internal residual stress by traveling in the heat treatment device 59 while applying a required tension to the strip, and winding the coil into a coil shape by the winding means 58; The coil-shaped thin strip material is mounted upstream of the plating apparatus 68 and is fed out to the plating apparatus 68.
2. Perform predetermined processing of plating processing 63 and post-processing 64,
A step of winding the coil-like thin strip material formed in the above-described step into a coil shape by the winding means 67;
8, and the thin strip material fed horizontally to the second shape processing device 88 is mounted on the press device 83 by the intermittent conveying means 82 provided in the second shape processing device 88. A batch process is performed in which processing is performed to form the tip of the inner lead into a required shape while intermittently supplying the inside of the processing mold device 84, and processing and processing are performed in the order of coiling by the winding means 87. A shape processing and processing method of a lead frame is generally used.

【0003】[0003]

【発明が解決しようとする課題】近来、半導体装置の軽
薄短小に伴い、半導体装置用リードフレームにより高度
な品質、信頼性が要求されるようになった。しかしなが
ら、金属薄板条材の改良によってリードフレームに要求
される品質仕様の多様化に対応することは困難な状況に
あり、リードフレームを形成する過程の加工及び処理の
多様化で対応する必要性があり、異種加工及び処理手段
を所要の位置に随時接続、分離の変更が可能なフレキシ
ビリティな一工程の加工及び処理を行う半導体装置用リ
ードフレームの製造方法が要求されている。さらに、半
導体装置の高集積化に伴い、回路形成リード数の増加や
リード幅及びリード間の間隔が微細になり、薄板条材の
形成加工やリードの形状加工及び圧印加工時に滞有した
内部残留応力及び打抜きカエリや突起が、前記リードフ
レームの形成加工及び処理時に微小な変形を生じ前記リ
ードフレームの品質、歩留まりを低下させるなどの問題
があり、形状加工及び処理の途中で中間処理を行う必要
性が生じていた。
In recent years, as semiconductor devices have become lighter, thinner and smaller, high quality and reliability have been required of lead frames for semiconductor devices. However, it is difficult to respond to the diversification of quality specifications required for lead frames by improving the metal sheet and strip material, and it is necessary to respond by diversifying the processing and processing of the lead frame forming process. In addition, there is a need for a method of manufacturing a lead frame for a semiconductor device that performs a flexible one-step processing and processing in which different types of processing and processing means can be connected to required positions and separation can be changed as needed. Furthermore, with the increase in the degree of integration of semiconductor devices, the number of circuit forming leads has increased, the lead width and the spacing between the leads have become finer, and the internal residue that has accumulated during the forming of thin strips, the forming of leads, and the coining process. There is a problem that stress and punch burrs and protrusions cause minute deformation during the forming and processing of the lead frame and lower the quality and yield of the lead frame, and it is necessary to perform intermediate processing in the middle of shape processing and processing. Sex had occurred.

【0004】さらに、リードフレームに要求される微細
な形状(回路形成リード数160以上)をプレス打抜き
加工のみで形成することは困難であり、異種の形状加工
方法や処理方法などを適切に組み合わせる必要があっ
た。さらに、従来方法では、各加工、処理工程毎にコイ
ル状に巻き取り、装着繰り出しを行うのでリードフレー
ムの微細なリードに曲がり、寄り、巻きぐせなどの変
形、破損を生じると共に加工、処理部分に酸化被膜を生
じ後処理工程を増加させリードフレームの品質、歩留ま
りを低下させるという問題があった。本発明はこのよう
な事情に鑑みてなされたもので、半導体装置用リードフ
レームの所定の形状加工及び処理を行う際に、加工、処
理工程間のそれぞれの搬送作業を効率化し、搬送で生じ
る損傷を防ぐと共に異種加工及び処理工程群の組み合わ
せが容易に行える形状加工及び処理ラインを構成し、微
細なリードフレームの品質、仕様条件の多様化にフレキ
シビリティに対応することができる半導体装置用リード
フレームの形状加工及び処理方法の提供を目的とする。
Further, it is difficult to form a fine shape (the number of circuit forming leads is 160 or more) required for a lead frame only by press punching, and it is necessary to appropriately combine different shape processing methods and processing methods. was there. Furthermore, in the conventional method, each processing and processing step is wound in a coil shape, and the mounting and feeding are performed, so that the fine leads of the lead frame are bent, shifted, curled, etc. There is a problem in that an oxide film is formed, the number of post-processing steps is increased, and the quality and yield of the lead frame are reduced. The present invention has been made in view of such circumstances, and when performing predetermined shape processing and processing of a lead frame for a semiconductor device, the efficiency of each transport operation between the processing and processing steps, and the damage caused by transport. A lead frame for semiconductor devices that forms a shape processing and processing line that can easily combine different types of processing and processing steps, and that can respond to the flexibility of fine lead frame quality and diversification of specification conditions. The purpose of the present invention is to provide a shape processing and processing method.

【0005】[0005]

【課題を解決するための手段】前記目的に沿う請求項1
記載の半導体装置用リードフレームの形状加工及び処理
方法は、リードフレームを形成する順送り金型装置の形
状加工ステージをそれぞれ独立した加圧駆動手段を備え
た形状加工手段に分割し、該形状加工手段を適切に組合
わせて複数の形状加工工程群を構成すると共に、該形状
加工工程群に又は該形状加工工程群の間に、上流の形状
加工で滞有した内部残留応力を除去するテンション付加
手段を備えた熱処理工程群、上流の形状加工で生じる打
抜きカエリや突起を除去する電解研磨及び/又は化学研
磨の処理工程群、前記リードフレームの所要部分を金属
被覆するめっき処理工程群、及びリード間の変形や寄り
を防ぐテーピングによるリード固定処理工程群のうち少
なくとも1つを、所要のループ量を維持する制御装置で
制御されたループを介して所要数連結し、しかも、これ
らがU字状に連結した一工程の形状加工及び処理ライン
を構成しており、前記形状加工及び処理ラインに、垂直
状態で繰り出された薄板条材を供給し、該薄板条材を前
記各加工及び処理工程群のそれぞれに備えた搬送装置で
前記ライン内を走行させつつ、前記薄板条材に所要の形
状加工と処理を順次連続して行い、所要のリードフレー
ムを形成している。そして、請求項2記載の半導体装置
用リードフレームの形状加工及び処理方法は、請求項1
記載の方法において、前記形状加工工程群の一部をフォ
トエッチングの形状加工工程群に置き換えて構成されて
いる。
According to the present invention, there is provided a semiconductor device comprising:
In the method for processing and processing a lead frame for a semiconductor device according to the above aspect, the shape processing stage of the progressive die apparatus for forming the lead frame is divided into shape processing means having independent pressure driving means. A tension applying means for forming a plurality of shape processing steps by appropriately combining and removing internal residual stress accumulated in upstream shape processing in or between the shape processing steps. A group of heat treatment steps, a group of processing steps of electrolytic polishing and / or chemical polishing for removing punch burrs and projections generated in the upstream shape processing, a group of plating processing steps for metal-coating a required portion of the lead frame, and a space between leads. A loop controlled by a control device that maintains a required loop amount by performing at least one of a group of lead fixing processing steps by taping that prevents deformation and deviation of the lead. A required number of connections are made via a U-shape, and these constitute a one-step shaping and processing line, and the thin strip material fed vertically is supplied to the shaping and processing line. Then, while the thin strip material is moved in the line by the transport device provided in each of the processing and processing steps, required processing and processing are sequentially and continuously performed on the thin strip material, A lead frame is formed. According to the second aspect of the present invention, there is provided a method of processing and processing a lead frame for a semiconductor device.
In the described method, a part of the shape processing step group is replaced with a photo etching shape processing step group.

【0006】[0006]

【作用】請求項1、2記載の半導体装置用リードフレー
ムの形状加工及び処理方法においては、従来の一体形式
の順送り金型装置に配列した形状加工ステージがそれぞ
れ独立した加圧駆動手段を備えた形状加工手段に分割さ
れているから容易に該形状加工手段を適切に組み合わせ
て複数の形状加工工程群を構成することが容易にでき
る。また、複数の形状加工工程群を分割形成しているか
ら該群又は群間に熱処理工程群、電解研磨及び/又は化
学研磨処理工程群、めっき処理工程群、テーピングなど
のリード固定処理工程群などの異種処理工程群を適切に
組み合わせて一工程の各種形状加工及び処理ラインを構
成することが容易にできる。更に、一工程の形状加工及
び処理ラインを構成するから薄板条材をコイル状に巻き
取り、繰り出す回数を削減し、加工待ちを無くすことが
できる。請求項2記載の半導体装置用リードフレームの
形状加工及び処理方法においては、形状加工工程群が分
割されているから形状、寸法を要求される微細なインナ
ーリードの形状加工をフォトエッチングなどの異種形状
加工工程群に容易に入れ替えて異種形状加工のコンビネ
ーションラインが構成できる。
In the method for processing and processing a lead frame for a semiconductor device according to the first and second aspects, the shape processing stages arranged in the conventional integrated progressive die apparatus have independent pressure driving means. Since it is divided into the shape processing means, the plurality of shape processing steps can be easily formed by appropriately combining the shape processing means. Further, since a plurality of shape processing process groups are divided and formed, a heat treatment process group, an electrolytic polishing and / or a chemical polishing process process group, a plating process process group, a lead fixing process process group such as taping, etc. It is easy to form various processing and processing lines of one process by appropriately combining the different types of processing steps. Furthermore, since a single-step shape processing and processing line is configured, the number of times the thin sheet material is wound up in a coil shape and fed out can be reduced, and waiting for processing can be eliminated. In the method of processing and processing a lead frame for a semiconductor device according to claim 2, since the processing step group is divided, the processing of the shape of the fine inner lead required for the shape and dimensions is performed by a different shape such as photo etching. A combination line of different shape processing can be easily replaced by a processing step group.

【0007】[0007]

【実施例】続いて、添付した図面を参照しつつ本発明を
具体化した実施例につき説明し、本発明の理解に供す
る。図1は本発明の第1の実施例に係る半導体装置用リ
ードフレームの形状加工及び処理方法の概要を説明する
ブロック図、図2は同方法で形成された単一リードフレ
ームの平面図を示す。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of the present invention; FIG. 1 is a block diagram for explaining an outline of a method of processing and processing a lead frame for a semiconductor device according to a first embodiment of the present invention, and FIG. 2 is a plan view of a single lead frame formed by the same method. .

【0008】本発明の第1の実施例に係る半導体装置用
リードフレームの形状加工及び処理方法は、図1に示す
ように第1の形状加工工程群10と、第2の形状加工工
程群11と、そのあとに続いて配列した熱処理工程群1
2と、電解研磨工程群13と、多層めっき処理工程群
(めっき処理工程群の一例)14と、テープ粘着工程群
(リード固定処理工程群の一例)15と、第3の形状加
工工程群16とを有し、これらの加工、処理の工程群を
制御する制御装置を備えたループ形成手段17〜23、
33を介して連結した形状加工、処理の一ラインを構成
しており、このラインに薄板条材を最初から垂直状態で
繰り出し、前記薄板条材がライン内を走行しつつリード
フレームの所要の形状加工、処理を順次行い所定の品質
仕様を備えたリードフレームが形成される。以下、これ
らについて詳しく説明する。
A method of processing and processing a lead frame for a semiconductor device according to a first embodiment of the present invention includes a first processing step group 10 and a second processing step group 11 as shown in FIG. And the heat treatment process group 1 arranged subsequently
2, an electropolishing step group 13, a multilayer plating step group (an example of a plating step group) 14, a tape adhesive step group (an example of a lead fixing step group) 15, and a third shape processing step group 16 Loop forming means 17 to 23 having a control device for controlling a process group of these processing and processing;
33, a line of shape processing and processing is constituted, and a thin strip material is unreeled from this line in a vertical state from the beginning, and the thin strip material travels in the line and has a required shape of the lead frame. Processing and processing are sequentially performed to form a lead frame having a predetermined quality specification. Hereinafter, these will be described in detail.

【0009】前記第1の形状加工工程群10は、該加工
工程群10の上流にコイル状に巻かれた帯状の薄板条材
Aを間欠に繰り出す巻き出し装置24及び一定のループ
量を形成維持するループ形成手段17と加工工程群10
の加工速度に合わせて送る間欠搬送装置25をその両側
に配設して、加工工程群10に薄板条材Aを送ってい
る。この第1の形状加工工程群10は、図2に示す、ア
ウターリード73とこれを支持する内外枠70及びパイ
ロット孔75などを形成する加工ステージを独立した図
示しない加圧駆動手段を備えた形状加工手段に分割し、
適切に配列して構成されたものである。前記形状加工工
程群10においては、薄板条材Aにアウターリード73
とこれを支持する内外枠70及びパイロット孔75など
を形成して、図示しないリードフレームの形状の一部が
形成された薄板条材Bを得る。また、形状加工工程群1
0で形成された薄板条材Bが加工工程群10の下流に配
置されたループ形成手段18で一定のループ量を維持し
た薄板条材Bのループを形成する。
The first shape processing step group 10 forms and maintains an unwinding device 24 for intermittently feeding a strip-shaped strip material A wound in a coil upstream of the processing step group 10 and a constant loop amount. Loop forming means 17 and processing step group 10
An intermittent transport device 25 that feeds in accordance with the processing speed is arranged on both sides thereof, and the thin plate material A is sent to the processing step group 10. The first shape processing step group 10 includes a pressure drive unit (not shown) in which a processing stage for forming the outer lead 73, the inner and outer frames 70 supporting the outer lead 73, the pilot hole 75, and the like is shown in FIG. Divided into processing means,
It is configured in an appropriate arrangement. In the shape processing step group 10, the outer lead 73 is attached to the thin strip material A.
And the inner and outer frames 70 and pilot holes 75 for supporting the same, to obtain a thin strip material B on which a part of a lead frame (not shown) is formed. Also, the shape processing step group 1
The sheet strip B formed at 0 is formed by the loop forming means 18 disposed downstream of the processing step group 10 to form a loop of the sheet strip B maintaining a constant loop amount.

【0010】次に、第2の形状加工工程群11は、該加
工工程群11の上流のループ形成手段18で形成された
薄板条材Bを間欠的に繰り出す加工工程群11の加工速
度に合わせて送る間欠搬送装置25をその両側に配設し
て、加工工程群11に薄板条材Bを送っている。この第
2の形状加工工程群11は、図2に示す、中央に素子搭
載部71と、これを支持する吊りリード74、76と、
インナーリード72などを形成する加工ステージを図示
しない独立した加圧駆動手段に分割し、適切に配列して
構成されたものである。前記形状加工工程群11におい
ては、薄板条材Bに素子搭載部71と、先端部を連結し
た連結片を残した形状のインナーリード72などを追加
加工して図示しないリードフレームの中間形状が形成さ
れた薄板条材Cを得る。形状加工工程群11で形成され
た薄板条材Cが加工工程群11の下流に配置されたルー
プ形成手段19で一定のループ量を維持した薄板条材C
のループを形成する。
Next, the second shape processing step group 11 is adjusted to the processing speed of the processing step group 11 for intermittently feeding out the thin strip material B formed by the loop forming means 18 upstream of the processing step group 11. An intermittent transporting device 25 is disposed on both sides of the device, and the thin plate material B is sent to the processing step group 11. The second shape processing step group 11 includes an element mounting portion 71 in the center, suspension leads 74 and 76 for supporting the element mounting portion 71, as shown in FIG.
The processing stage for forming the inner lead 72 and the like is divided into independent pressure driving means (not shown), and is appropriately arranged. In the shape processing step group 11, an intermediate shape of a lead frame (not shown) is formed by additionally processing an element mounting portion 71 and an inner lead 72 having a shape of a connecting piece connecting a tip end portion of the thin strip material B. The obtained thin strip material C is obtained. The thin strip material C formed in the shape processing step group 11 maintains a constant loop amount by the loop forming means 19 arranged downstream of the processing step group 11.
To form a loop.

【0011】次に、熱処理工程群12は、該熱処理工程
群12の上流のループ形成手段19で形成された薄板条
材Cを繰り出す熱処理工程群12の処理速度に合わせて
送る搬送装置26をその両側に配設し、搬送装置26
は、薄板条材Cに所要のテンションを付与する図示しな
いブライダルロールを具備し、熱処理工程群12に所定
のテンションを付加した薄板条材Cを送っている。前記
熱処理工程群12は、予熱部27、加熱部28、徐冷部
29の手段からなる酸化防止雰囲気炉を備えて構成され
たものである。熱処理工程群12においては、薄板条材
Cを前記酸化防止雰囲気炉に供給し、予熱部27、加熱
部28、徐冷部29の処理を経て第1、第2の形状加工
で生じた内部残留応力が除去された薄板条材Dを得る。
前記熱処理工程群12で処理された薄板条材Dが熱処理
工程群12の下流に配置されたループ形成手段20で一
定のループ量を維持した薄板条材Dのループを形成す
る。
Next, the heat treatment step group 12 includes a transport device 26 for feeding the thin sheet material C formed by the loop forming means 19 upstream of the heat treatment step group 12 in accordance with the processing speed of the heat treatment step group 12. Arranged on both sides, the transport device 26
Has a bridal roll (not shown) that applies a required tension to the thin strip material C, and sends the thin strip material C to which a predetermined tension has been added to the heat treatment process group 12. The heat treatment step group 12 is provided with an oxidation prevention atmosphere furnace including means of a preheating section 27, a heating section 28, and a slow cooling section 29. In the heat treatment step group 12, the thin strip material C is supplied to the oxidation-preventive atmosphere furnace, and the internal residual generated by the first and second shape processing through the processing of the preheating unit 27, the heating unit 28, and the slow cooling unit 29. The strip material D from which the stress has been removed is obtained.
The strip material D treated in the heat treatment step group 12 forms a loop of the sheet strip material D maintaining a constant loop amount by the loop forming means 20 arranged downstream of the heat treatment step group 12.

【0012】次に、前記電解研磨工程群13は、該電解
研磨工程群13の上流のループ形成手段20で形成され
た薄板条材Dを繰り出す電解研磨工程群13の処理速度
に合わせて送る搬送装置25をその両側に配設し、薄板
条材Dを電解研磨工程群13に送っている。電解研磨工
程群13は、図示しない電解液槽と薄板条材Dに電解電
流を印加する電源装置を備えて構成されたものである。
電解研磨工程群13においては、薄板条材Dを該電解研
磨工程群13に供給し、電解研磨液としてCrO系を
用いて陽極電解研磨処理を行って、第1、第2の形状加
工で生じた打抜きカエリ、凸部などの突起が除去された
薄板条材Eを得る。電解研磨工程群13で処理された薄
板条材Eが電解研磨工程群13の下流に配置されたルー
プ形成手段21で一定のループ量を維持した薄板条材E
のループを形成する。
Next, the electropolishing step group 13 transports the thin plate material D formed by the loop forming means 20 upstream of the electropolishing step group 13 according to the processing speed of the electropolishing step group 13 for feeding out the thin strip material D. The apparatus 25 is disposed on both sides of the apparatus, and the sheet strip D is sent to the electropolishing step group 13. The electropolishing process group 13 is provided with an electrolytic solution tank (not shown) and a power supply device for applying an electrolytic current to the thin strip material D.
In the electropolishing step group 13, the thin plate material D is supplied to the electropolishing step group 13, and an anodic electropolishing process is performed using a CrO 3 system as an electropolishing liquid, and the first and second shape processing are performed. A thin strip material E from which protrusions such as punch burrs and projections are removed is obtained. The thin strip material E processed in the electropolishing step group 13 is maintained in a constant loop amount by the loop forming means 21 arranged downstream of the electropolishing step group 13.
To form a loop.

【0013】次に、前記多層めっき処理工程群14は、
多層めっき処理工程群14の上流のループ形成手段21
で形成された薄板条材Eを繰り出す多層めっき処理工程
群14の処理速度に合わせて送る搬送装置30a〜30
cを所要の位置に配設し、該搬送装置30a〜30cは
薄板条材Eに所要のテンションを付与して多層めっき処
理工程群14に薄板条材Eを送っている。多層めっき処
理工程群14は、所定のめっき電流を薄板条材Eの接触
面に印加する給電手段と、薄板条材Eを垂直状態で揺動
を規制しながら移送する搬送装置30a〜30cと、薄
板条材Eにめっき前処理及び下地めっきを処理する前処
理手段31と、下地めっきされた薄板条材Eの所要部分
にめっきを処理する多層めっき処理手段32と、剥離、
洗浄処理する後処理手段34を有して構成されたもので
ある。多層めっき処理工程群14においては、薄板条材
Eの所定部分にめっき前処理及び銅、ニッケルなどの下
地めっき層の形成を行い、下地めっきされた薄板条材E
の所要部分に金、銀、パラジュウムなどの貴金属を多層
めっきした後、銅などの不要部分の剥離、洗浄を行っ
て、薄板条材Eに多層めっきを施した薄板条材Fを得
る。多層めっき処理工程群14で処理された薄板条材F
が多層めっき処理工程群14の下流に配置されたループ
形成手段22で一定ループ量のループを形成する。
Next, the multi-layer plating process group 14 includes:
Loop forming means 21 upstream of multilayer plating process group 14
Conveying devices 30a to 30 that feed the thin sheet material E formed by the above in accordance with the processing speed of the multi-layer plating process group 14
The transfer devices 30a to 30c apply the required tension to the thin strip material E and send the thin strip material E to the multilayer plating process group 14. The multilayer plating process group 14 includes a power supply unit that applies a predetermined plating current to the contact surface of the thin strip material E, and a transport device 30a to 30c that transports the thin strip material E while restricting swing in a vertical state. A pre-processing means 31 for performing a pre-plating treatment and a base plating on the thin strip material E; a multilayer plating processing means 32 for performing a plating on a required portion of the thin-plate material E plated with the base;
It has a post-processing means 34 for performing a cleaning process. In the multi-layer plating process group 14, a pre-plating process and the formation of a base plating layer of copper, nickel, etc. are performed on a predetermined portion of the thin strip material E, and the thin plated strip material E is plated.
After a precious metal such as gold, silver, palladium or the like is multi-layer-plated, unnecessary portions such as copper are peeled off and washed to obtain a thin-plate strip E obtained by performing multi-layer plating on the thin-plate strip E. Thin strip material F processed in multilayer plating process group 14
Forms a loop with a constant loop amount by the loop forming means 22 arranged downstream of the multilayer plating process group 14.

【0014】次に、前記テープ粘着工程群15は、テー
プ粘着工程群15の上流のループ形成手段22で形成さ
れた薄板条材Fを繰り出すテープ粘着工程群15の処理
速度に合わせて送る搬送装置35と、薄板条材Fに粘着
させるテープ36を供給するテープ供給装置37と、所
要のテープ形状を形成する形成加工手段38と加熱圧着
手段39を有する形成加工装置40とを有し、薄板条材
Fとテープ36が交差位置で、粘着するように構成され
ている。テープ粘着工程群15においては、供給された
薄板条材Fとテープ36の交差位置で、薄板条材Fのリ
ード所要部分に所定形状のテープが粘着されリードが固
着された薄板条材Gを得る。テープ粘着工程群15の下
流に配置されたループ形成手段23で一定のループ量の
薄板条材Gのループを形成する。
Next, the tape-adhering step group 15 is provided with a conveying device that feeds the thin sheet material F formed by the loop forming means 22 upstream of the tape-adhering step group 15 in accordance with the processing speed of the tape-adhering step group 15. 35, a tape supply device 37 for supplying a tape 36 to be adhered to the thin strip material F, and a forming and processing device 40 having a forming means 38 and a thermocompression bonding means 39 for forming a required tape shape. The material F and the tape 36 are configured to adhere at the intersections. In the tape bonding step group 15, at a crossing position of the supplied thin strip material F and the tape 36, a tape of a predetermined shape is adhered to a required lead portion of the thin strip material F to obtain a thin strip material G to which the lead is fixed. . A loop of the thin sheet material G having a constant loop amount is formed by the loop forming means 23 disposed downstream of the tape adhesion step group 15.

【0015】次に、前記第3の形状加工工程群16は、
該加工工程群16の上流のループ形成手段23でループ
形成された薄板条材Gを間欠的に繰り出す加工工程群1
6の加工速度に合わせて送る間欠搬送装置25をその両
側に配設して、加工工程群16に薄板条材Gを送ってい
る。この第3の形状加工工程群16は、インナーリード
72の先端をつないだ連結片の除去、先端の矯正、素子
搭載部71のディプレスなど打抜き、圧印、曲げの形状
加工を独立した図示しない駆動手段を備えた形状加工手
段に分割し、適切に配列して構成されたものである。第
3の形状加工工程群16においては、薄板条材Gの先端
部及び素子搭載部71に圧印、曲げなどの加工を行っ
て、連結片を除去した所要のリードフレームの形状加工
処理を行った薄板条材を得る。第3の形状加工工程群1
6で形成された薄板条材を加工工程群16の下流に配置
された巻き取り装置41で順次巻き取るか、または、第
3の形状加工工程群16に間欠カット手段を設けてリー
ドフレームの単体を所要数連結したユニットフレームを
形成して前記リードフレームを得る。
Next, the third shape processing step group 16 includes:
A processing step group 1 for intermittently feeding out the thin sheet material G looped by the loop forming means 23 upstream of the processing step group 16.
An intermittent transporting device 25 for feeding in accordance with the processing speed of No. 6 is disposed on both sides of the intermittent conveying device 25, and the thin sheet material G is sent to the processing step group 16. The third shaping step group 16 includes independent drive (not shown) for removing the connecting piece connecting the tip of the inner lead 72, correcting the tip, punching such as depressing the element mounting portion 71, stamping, and bending. It is divided into shape processing means provided with the means and arranged appropriately. In the third shape processing step group 16, processing such as stamping and bending was performed on the distal end portion of the thin strip material G and the element mounting portion 71, and the required lead frame shape processing from which the connection pieces were removed was performed. Obtain a thin strip. Third shape processing step group 1
The thin strip material formed in step 6 is sequentially wound by a winding device 41 disposed downstream of the processing step group 16, or the third shape processing step group 16 is provided with an intermittent cutting means to form a single lead frame. Are connected to form a unit frame to obtain the lead frame.

【0016】図3に示すように、本発明の第2の実施例
に係る半導体装置用リードフレームの形状加工及び処理
方法は、第1の形状加工工程群301と、電解研磨工程
群302と、エッチング加工である第2の形状加工工程
群303と、多層めっき処理工程群304と、テープ粘
着工程群305と、第3の形状加工工程群306とを有
し、これらの加工、処理の工程群を制御する制御装置を
備えたループ形成手段307〜314を介して連結して
第1の実施例と同様に形状加工、処理の一ラインを構成
しており、このラインに薄板条材を垂直状態で繰り出
し、該薄板条材が前記ライン内を走行しつつ第1の形状
加工工程群301でリードフレームの形状加工を行い、
前記加工で生じた打抜きカエリ、凸部を除去し、一般的
に知られたドライフィルムを用いたエッチング方法で微
細なインナーリード部を形成する形状加工を行ったの
ち、多層めっき処理工程群304、リード固定処理工程
群305、第3の形状加工工程群306の処理を順次行
い微細なリード部分が所定の品質仕様を備えたリードフ
レームを得る。
As shown in FIG. 3, a method of processing and processing a lead frame for a semiconductor device according to a second embodiment of the present invention includes a first processing step group 301, an electrolytic polishing step group 302, It has a second shape processing step group 303 as an etching process, a multilayer plating processing step group 304, a tape adhesion step group 305, and a third shape processing step group 306, and these processing and processing step groups. Are connected via loop forming means 307 to 314 provided with a control device for controlling the shape processing and processing as in the first embodiment. In the first shape processing step group 301, while performing the shape processing of the lead frame while the thin strip material travels in the line,
After removing the punch burrs and protrusions generated by the processing, and performing a shape processing to form a fine inner lead portion by an etching method using a generally known dry film, a multilayer plating process step group 304, The processes of the lead fixing process step group 305 and the third shape processing step group 306 are sequentially performed to obtain a lead frame in which fine lead portions have predetermined quality specifications.

【0017】以上の第1、第2の実施例に係る半導体装
置用リードフレームの形状加工及び処理方法は、リード
フレームとなる薄板条材を垂直方向に立てて搬送し、ラ
インの中間部分をU字状に折り曲げているので、設備の
設置スペースが少なくて済む。また、薄板条材を垂直方
向に立てて搬送しているので、薄板条材にひねりを与え
ることなく円滑にターンできる。
The method of processing and processing the lead frame for a semiconductor device according to the first and second embodiments is such that the thin strip material serving as the lead frame is vertically set and conveyed, and the intermediate portion of the line is moved to Since it is bent in a letter shape, the installation space for equipment is small. In addition, since the thin strip is transported in the vertical direction, it can be turned smoothly without giving a twist to the thin strip.

【0018】[0018]

【発明の効果】以上説明したように、請求項1、2記載
の半導体装置用リードフレームの形状加工及び処理方法
は、形状加工工程群が独立した加圧駆動手段を備えた形
状加工手段で容易に構成されているから従来の一体形式
の順送り金型に比べて、各種の形状加工工程群が容易に
構成できリードフレームの形状の多様化の要求に容易に
しかも迅速に対応することができる。更に、前記群又は
群間に熱処理工程群、電解研磨及び/又は化学研磨処理
工程群、めっき処理工程群、リード固定処理工程群など
の異種処理工程群を容易に接続して一工程の各種形状加
工及び処理ラインを容易に構成できるから少量多品種及
び類似品種のリードフレームを容易に製造することがで
きる。更に、薄板条材のコイル状に巻き取り、繰り出し
回数を削減し、加工待ちが減少するから巻き取り、繰り
出しによるリードフレームの変形などの損傷が減少し、
加工待ちによる錆や酸化被膜が減少し、後工程の歩留り
を向上させてリードフレームの品質を向上させる。しか
も、リードフレームとなる薄板条材を垂直方向に立てて
搬送し、ラインの中間部分をU字状に折り曲げているの
で、薄板条材に無理なひねりなどを与えることがなくU
ターンでき、結果して設備の設置スペースが少なくて済
むという利点がある。特に、請求項2記載の半導体装置
用リードフレームの形状加工及び処理方法においては、
形状加工工程群が分割されているから形状、寸法を要求
される微細なインナーリードの形状加工をフォトエッチ
ングなどの異種形状加工工程群に容易に入れ替えて異種
形状加工や処理のコンビネーションラインが構成でき
る。
As described above, the method for processing and processing a lead frame for a semiconductor device according to the first and second aspects is easily performed by the shape processing means provided with the pressure driving means having independent processing steps. Therefore, as compared with the conventional integrated type progressive die, it is possible to easily configure various shape processing steps and easily and quickly respond to the demand for diversification of the lead frame shape. Furthermore, different types of processing groups such as a heat treatment process group, an electrolytic polishing and / or chemical polishing process group, a plating process group, a lead fixing process group, etc. are easily connected between the groups or groups, so that various shapes in one process can be obtained. Since the processing and processing lines can be easily configured, it is possible to easily manufacture lead frames of various types and similar types in small quantities. Furthermore, the winding and thinning of the thin strip material is reduced, the number of times of feeding is reduced, and the waiting time for processing is reduced, so that damage such as deformation of the lead frame due to winding and feeding is reduced.
Rust and oxide film due to processing wait are reduced, and the yield of the post-process is improved to improve the quality of the lead frame. In addition, since the thin strip material serving as the lead frame is vertically set and conveyed, and the middle portion of the line is bent in a U-shape, the thin strip material is not subjected to an unnatural twist or the like.
There is an advantage that a turn can be made, and consequently the installation space of the equipment is reduced. In particular, in the method of processing and processing a lead frame for a semiconductor device according to claim 2,
Since the shape processing process group is divided, it is possible to easily replace the shape processing of fine inner leads, which require shape and dimensions, with a heterogeneous shape processing process group such as photoetching to form a combination line of different shape processing and processing. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例に係る半導体装置用リー
ドフレームの形状加工及び処理方法の概要を説明するブ
ロック図である。
FIG. 1 is a block diagram illustrating an outline of a method of processing and processing a lead frame for a semiconductor device according to a first embodiment of the present invention.

【図2】同方法で形成された単一リードフレームの平面
図である。
FIG. 2 is a plan view of a single lead frame formed by the same method.

【図3】本発明の第2の実施例に係る半導体装置用リー
ドフレームの形状加工及び処理方法の概要を説明するブ
ロック図である。
FIG. 3 is a block diagram illustrating an outline of a method of processing and processing a lead frame for a semiconductor device according to a second embodiment of the present invention.

【図4】従来の形状加工装置を示す概要説明図である。FIG. 4 is a schematic explanatory view showing a conventional shape processing device.

【図5】従来の熱処理装置を示す概要説明図である。FIG. 5 is a schematic explanatory view showing a conventional heat treatment apparatus.

【図6】従来のめっき装置を示す概要説明図である。FIG. 6 is a schematic explanatory view showing a conventional plating apparatus.

【図7】従来の形状加工装置を示す概要説明図である。FIG. 7 is a schematic explanatory view showing a conventional shape processing device.

【符号の説明】[Explanation of symbols]

10 第1の形状加工工程群 11 第2の形
状加工工程群 12 熱処理工程群 13 電解研磨
工程群 14 多層めっき処理工程群 15 テープ粘着工程群(リード固定処理工程群) 16 第3の形状加工工程群 17〜23 ル
ープ形成手段 24 巻き出し装置 25 間欠搬送
装置 26 搬送装置 27 予熱部 28 加熱部 27 徐冷部 30a〜30c 搬送装置 31 前処理手
段 32 多層めっき処理手段 33 ループ形
成手段 34 後処理手段 35 搬送装置 36 テープ 37 テープ供
給装置 38 形成加工手段 39 加熱圧着
手段 40 形成加工装置 41 巻き取り
装置 70 内外枠 71 素子搭載
部 72 インナーリード 73 アウター
リード 74 吊りリード 76 吊りリー
ド 75 パイロット孔 301 第1の
形状加工工程群 302 電解研磨工程群 303 第2の
形状加工工程群 304 多層めっき処理工程群 305 テープ
粘着工程群 306 第3の形状加工工程群 307〜314
ループ形成手段 A〜G 薄板条材
DESCRIPTION OF SYMBOLS 10 1st shaping process group 11 2nd shaping process group 12 Heat treatment process group 13 Electropolishing process group 14 Multilayer plating process group 15 Tape adhesion process group (lead fixing process process group) 16 3rd shaping process process Groups 17 to 23 Loop forming means 24 Unwinding device 25 Intermittent transporting device 26 Transporting device 27 Preheating unit 28 Heating unit 27 Slow cooling unit 30a to 30c Transporting device 31 Preprocessing means 32 Multilayer plating processing means 33 Loop forming means 34 Postprocessing means 35 Conveying Device 36 Tape 37 Tape Supply Device 38 Forming and Processing Means 39 Heat Compression Means 40 Forming and Processing Device 41 Winding Device 70 Inner / Outer Frame 71 Element Mounting Section 72 Inner Lead 73 Outer Lead 74 Suspended Lead 76 Suspended Lead 75 Pilot Hole 301 First Shape processing step group 302 Electropolishing step group 30 3 Second shape processing step group 304 Multi-layer plating processing step group 305 Tape adhesion step group 306 Third shape processing step group 307 to 314
Loop forming means A to G Thin strip material

───────────────────────────────────────────────────── フロントページの続き (72)発明者 柴田 宗也 福岡県北九州市八幡西区小嶺2丁目10番 1号 株式会社三井ハイテック内 (58)調査した分野(Int.Cl.6,DB名) H01L 23/50 C23F 17/00 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Muneya Shibata 2-10-1, Komine, Yawatanishi-ku, Kitakyushu-shi, Fukuoka Mitsui High-Tech Co., Ltd. (58) Field surveyed (Int. Cl. 6 , DB name) H01L 23/50 C23F 17/00

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 リードフレームを形成する順送り金型装
置の形状加工ステージをそれぞれ独立した加圧駆動手段
を備えた形状加工手段に分割し、該形状加工手段を適切
に組合わせて複数の形状加工工程群を構成すると共に、
該形状加工工程群に又は該形状加工工程群の間に、上流
の形状加工で滞有した内部残留応力を除去するテンショ
ン付加手段を備えた熱処理工程群、上流の形状加工で生
じる打抜きカエリや突起を除去する電解研磨及び/又は
化学研磨の処理工程群、前記リードフレームの所要部分
を金属被覆するめっき処理工程群、及びリード間の変形
や寄りを防ぐテーピングによるリード固定処理工程群の
うち少なくとも1つを、所要のループ量を維持する制御
装置で制御されたループを介して所要数連結し、しか
も、これらがU字状に連結した一工程の形状加工及び処
理ラインを構成しており、前記形状加工及び処理ライン
に、垂直状態で繰り出された薄板条材を供給し、該薄板
条材を前記各加工及び処理工程群のそれぞれに備えた搬
送装置で前記ライン内を走行させつつ、前記薄板条材に
所要の形状加工と処理を順次連続して行い、所要のリー
ドフレームを形成することを特徴とする半導体装置用リ
ードフレームの形状加工及び処理方法。
1. A shape processing stage of a progressive die apparatus for forming a lead frame is divided into shape processing means having independent pressure driving means, and the shape processing means is appropriately combined to form a plurality of shape processing means. Configure the process group,
A heat treatment step group provided with a tension applying means for removing internal residual stress retained in the upstream shape processing in the shape processing step group or between the shape processing step groups, punch burrs and projections generated in the upstream shape processing At least one of a group of steps of electrolytic polishing and / or chemical polishing for removing a metal, a group of steps of plating for metal-coating a required portion of the lead frame, and a group of steps of fixing a lead by taping to prevent deformation and deviation between leads. Are connected by a required number through a loop controlled by a control device that maintains a required loop amount, and these constitute a one-step shape processing and processing line connected in a U-shape. A thin strip fed in a vertical state is supplied to a shape processing and processing line, and the thin strip is fed to the processing and processing step group by a transfer device provided in each of the processing and processing steps. While traveling, it performed sequentially and continuously processed with the required shaping in the thin strip material, shaping and processing method of a semiconductor device lead frame and forming a desired lead frame.
【請求項2】 前記形状加工工程群の一部をフォトエッ
チングの形状加工工程群に置き換えて構成されているこ
とを特徴とする請求項1記載の半導体装置用リードフレ
ームの形状加工及び処理方法。
2. A method for processing and processing a lead frame for a semiconductor device according to claim 1, wherein a part of said group of processing steps is replaced by a group of processing steps of photoetching.
JP15403092A 1992-04-28 1992-04-28 Shape processing and processing method of lead frame for semiconductor device Expired - Fee Related JP2934804B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15403092A JP2934804B2 (en) 1992-04-28 1992-04-28 Shape processing and processing method of lead frame for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15403092A JP2934804B2 (en) 1992-04-28 1992-04-28 Shape processing and processing method of lead frame for semiconductor device

Publications (2)

Publication Number Publication Date
JPH06318659A JPH06318659A (en) 1994-11-15
JP2934804B2 true JP2934804B2 (en) 1999-08-16

Family

ID=15575378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15403092A Expired - Fee Related JP2934804B2 (en) 1992-04-28 1992-04-28 Shape processing and processing method of lead frame for semiconductor device

Country Status (1)

Country Link
JP (1) JP2934804B2 (en)

Also Published As

Publication number Publication date
JPH06318659A (en) 1994-11-15

Similar Documents

Publication Publication Date Title
JP2934804B2 (en) Shape processing and processing method of lead frame for semiconductor device
TWI595619B (en) Method of manufacturing lead frame
JPS61125161A (en) Manufacture of lead frame
US3957614A (en) Apparatus for treating portions of articles
JP2622632B2 (en) Method for manufacturing lead frame for semiconductor device
JP2011028891A (en) Terminal-metal-fittings manufacturing apparatus, and terminal-metal-fittings manufacturing method
JPH0438860A (en) Manufacture method of semiconductor device lead frame
JP2520486B2 (en) Method for manufacturing lead frame for semiconductor device
JP2529774B2 (en) Semiconductor device lead frame material and manufacturing method thereof
JPS62154766A (en) Manufacture of lead frame for semiconductor device
JP3030599B2 (en) Electronic parts shape processing equipment
JP3018024B2 (en) Lead frame manufacturing method
JP2520482B2 (en) Method for manufacturing lead frame for semiconductor device
KR101421058B1 (en) Partial plating system and method
CN107993942B (en) Manufacturing process of lead frame
JPH0821652B2 (en) Equipment for manufacturing lead frames for semiconductor devices
JP2812879B2 (en) Plate material for electric and electronic parts and method for producing the same
JP2756857B2 (en) Lead frame manufacturing method
JP3061735B2 (en) Lead frame shape processing equipment for semiconductor devices
JPH07176671A (en) Lead frame and manufacture thereof
JP2017208434A (en) Method for manufacturing lead frame
JPS5835653Y2 (en) Semi-rigid plated wire manufacturing equipment
JPH0395960A (en) Manufacture of lead frame through soldering of outer lead
JPH0945718A (en) Manufacture of bonding wire
JPS6386887A (en) Plating method

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090604

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 10

Free format text: PAYMENT UNTIL: 20090604

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100604

Year of fee payment: 11

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 11

Free format text: PAYMENT UNTIL: 20100604

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 12

Free format text: PAYMENT UNTIL: 20110604

LAPS Cancellation because of no payment of annual fees