JP2520482B2 - Method for manufacturing lead frame for semiconductor device - Google Patents

Method for manufacturing lead frame for semiconductor device

Info

Publication number
JP2520482B2
JP2520482B2 JP1203587A JP20358789A JP2520482B2 JP 2520482 B2 JP2520482 B2 JP 2520482B2 JP 1203587 A JP1203587 A JP 1203587A JP 20358789 A JP20358789 A JP 20358789A JP 2520482 B2 JP2520482 B2 JP 2520482B2
Authority
JP
Japan
Prior art keywords
lead frame
lead
stage
tip
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1203587A
Other languages
Japanese (ja)
Other versions
JPH0366153A (en
Inventor
勇 近江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tec Inc
Original Assignee
Mitsui High Tec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tec Inc filed Critical Mitsui High Tec Inc
Priority to JP1203587A priority Critical patent/JP2520482B2/en
Publication of JPH0366153A publication Critical patent/JPH0366153A/en
Application granted granted Critical
Publication of JP2520482B2 publication Critical patent/JP2520482B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置用リードフレームの製造方法に
関する。
The present invention relates to a method for manufacturing a lead frame for a semiconductor device.

〔従来の技術〕 半導体装置用リードフレームの製造方法は、プレス加
工によるものが良く知られている。このプレス加工法
は、通常良く知られた順送り金型を用いて、圧延した金
属薄板材料の不要部分を順次打抜き、所定形状のリード
フレームを連続体または短冊状に形成するものである。
[Prior Art] As a method of manufacturing a lead frame for a semiconductor device, a method of pressing is well known. In this press working method, an undesired portion of the rolled sheet metal material is sequentially punched out using a well-known progressive die to form a lead frame having a predetermined shape in a continuous body or a strip shape.

近来、リードフレームを用いた半導体装置の機能の多
様化,多ピン下傾向に伴って、リードフレームのインナ
ーリードの先端部が微細化され、リード幅や間隔が一層
狭くなる傾向にある。しかしながら、プレスによる加工
は、打抜き刃物の強度の点から微細なリード間の打抜き
は離間して行っている。すなわち、リードの両側のリー
ド間を別々の工程で打抜きする処理を行っている。この
ため、インナーリードに捩じりが生じリードフレームの
内部に加工応力が残る。この内部応力が半導体装置の組
立て工程における加熱によって解放されリード先端の寄
り,重なり及び浮き沈み等を生じ、半導体装置の組立て
工程におけるワイヤボンディングの接続不良,回路の短
絡を招く等リードフレームの品質を低下させる要因とな
っていた。
In recent years, with the diversification of functions of semiconductor devices using lead frames and the tendency toward lower pin count, the tips of the inner leads of the lead frames are becoming finer, and the lead width and spacing tend to be narrower. However, in the press working, the fine leads are punched apart from each other in terms of the strength of the punching blade. That is, the process of punching between the leads on both sides of the lead is performed in separate steps. For this reason, the inner lead is twisted and processing stress remains inside the lead frame. This internal stress is released by heating during the semiconductor device assembly process, leading to lead tip deviation, overlap, ups and downs, etc., leading to poor wire bonding connections and short circuits in the semiconductor device assembly process, leading to lower lead frame quality. It was a factor to make.

このような要因を防止する従来技術として、リード先
端を連結する連結片を設け、各リードの先端を連結した
状態でテープや樹脂等によって各リードリードの先端を
固定保持するものが知られている。更に他の公知技術と
して、リードフレームが帯有する内部応力を除去する焼
鈍を施した後、リードの先端を形成した短冊状リードフ
レーム又はリードフレームの連続体を熱処理する方法が
提案されている。
As a conventional technique for preventing such a factor, there is known a technique in which a connecting piece for connecting the ends of the leads is provided and the ends of the leads are fixedly held by tape or resin in a state where the ends of the leads are connected. . As still another known technique, there is proposed a method in which annealing is performed to remove the internal stress of the lead frame, and then the strip-shaped lead frame or the continuous body of the lead frame in which the tips of the leads are formed is heat-treated.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

しかし、上記技術においては、短冊状リードフレーム
を熱処理用治具に配列する際に手作業となり、作業性に
欠け、工程が増加する。更に、真空装置等の付帯設備が
高コストとなる欠点がある。
However, in the above technique, when the strip-shaped lead frame is arranged on the heat treatment jig, it is a manual work, which lacks workability and increases the number of steps. Further, there is a drawback that incidental equipment such as a vacuum device becomes expensive.

更に、リードフレームの連続体を焼鈍する技術におい
ては、加熱,徐冷による形状の変形及び位置決め用基準
孔の変形並びに基準孔ピッチの寸法が変化して後工程の
半導体位置決めが不安定となり、トラブルの原因となる
欠点があった。
Further, in the technology for annealing the continuous body of the lead frame, deformation of the shape due to heating and slow cooling, deformation of the reference hole for positioning, and the size of the reference hole pitch change, and the semiconductor positioning in the subsequent process becomes unstable. There was a drawback that caused

更に、リード先端を細い連結片で接続しているため、
リードフレームの連続体を連続又は間欠搬送して焼鈍処
理を施す場合、引っ張り力によるリード先端部分の変形
又はコイニングの余肉による変形が生じる等の欠点もあ
った。
Furthermore, because the tip of the lead is connected with a thin connecting piece,
When the continuous body of the lead frame is continuously or intermittently conveyed and subjected to the annealing treatment, there is a defect that the lead tip portion is deformed by the tensile force or the extra coining thickness is deformed.

本発明は、上記欠点を取り除き、インナーリード先端
部のワイヤボンディングエリアを正確に所要形状に創成
すること、及び焼鈍を施す際に付加するテンションに耐
え得る程度の機械的強度を付与することに、並びにイン
ナーリード先端部を正確な位置に配列保持してテープ固
定することを目的とする。更に、作業性が良く、且つ高
品質で所要の機能条件を有するリードフレームを得る製
造方法を提供することにある。
The present invention eliminates the above drawbacks, to accurately create the wire bonding area of the inner lead tip in a required shape, and to impart a mechanical strength that can withstand the tension applied when performing annealing, Another object is to fix the tape by holding the tips of the inner leads in an accurate position. Another object of the present invention is to provide a manufacturing method for obtaining a lead frame having good workability, high quality, and required functional conditions.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は、上記目的を達成するために、帯状をなす金
属薄板材の不要部分を順次除去して、サポートバーによ
って前記金属薄板材の一部として保持された半導体素子
搭載ステージと、該ステージの外周縁から放射状に配列
した複数のインナリードと、これらのインナリードの外
側に連ねてアウタリードとを形成し、これらの形成工程
の中間で熱処理を施して所要のリードフレームを形成す
る製造方法において、前記インナリードの先端部であっ
て前記ステージとの接合部分を中間片としてこれらのイ
ンナリードとステージとを一体に形成したものとすると
共に、前記インナリードの先端を含んだその近傍領域及
び前記中間片の一部を含む部分までにかけてを薄肉部と
して成形加工し且つ前記インナリードの先端の薄肉部を
ワイヤボンディングエリアとして帯状リードフレームを
構成し、該帯状リードフレームに所定のテンションを均
一に付加し、該帯状リードフレームを連続又は所要の長
さ間欠搬送して余熱,焼鈍及び徐冷を順次行って内部の
残留応力を除去する焼鈍を連続して行った後、めっき,
テーピング等のリードフレーム所要の処理加工を施し、
更に、前記中間片と前記インナリードの先端の薄肉部の
うち前記中間片側とを含めて打ち抜き成形によって切除
して前記ステージの外周縁と前記インナリードの切除端
との間にキャビテーを形成することを特徴とする。
In order to achieve the above object, the present invention sequentially removes unnecessary portions of a strip-shaped thin metal sheet material, and a semiconductor element mounting stage held as a part of the thin metal sheet material by a support bar, and a stage of the stage. A plurality of inner leads radially arranged from the outer peripheral edge, and outer leads are formed continuously in the outer side of these inner leads, in a manufacturing method for forming a required lead frame by performing heat treatment in the middle of these forming steps, The inner lead and the stage are integrally formed with the end portion of the inner lead that is a joint portion with the stage as an intermediate piece, and a region near the inner lead including the tip and the intermediate portion. Forming a thin portion up to a portion including a part of the piece and wire-bonding the thin portion at the tip of the inner lead A strip-shaped lead frame is configured as a rear, a predetermined tension is uniformly applied to the strip-shaped lead frame, and the strip-shaped lead frame is continuously or intermittently conveyed for a required length to sequentially perform residual heat, annealing and slow cooling, After continuous annealing to remove residual stress, plating,
The lead frame required processing such as taping is applied,
Further, a cavity is formed between the outer peripheral edge of the stage and the cut end of the inner lead by punching out the intermediate piece and the intermediate piece side of the thin portion at the tip of the inner lead. Is characterized by.

〔作用〕[Action]

本発明の方法では、各インナーリードの先端に中間片
を備え、この中間片を介してインナーリードをステージ
部の周辺に連結して一体形成し、リードフレームに搬送
の引っ張り力及びテンションに耐え得るように機械的強
度を与える。更に、この中間片によって先端部にワイヤ
ボンディングエリアを有する薄肉部を正確に成形加工す
る際の余肉の逃げ部分を構成することにより、インナー
リードの変形を最小にとどめて帯状のリードフレームを
加工する。
According to the method of the present invention, an intermediate piece is provided at the tip of each inner lead, and the inner lead is connected to the periphery of the stage part through the intermediate piece to be integrally formed, so that the lead frame can withstand the pulling force and tension of conveyance. So as to give mechanical strength. In addition, by forming an escape area for excess thickness when accurately forming a thin portion having a wire bonding area at the tip with this intermediate piece, deformation of the inner lead is minimized and a strip-shaped lead frame is processed. To do.

この後、帯状リードフレームに所定のテンションを均
一に付加し、該フレームを連続又は所要の長さ間欠搬送
して、予熱,焼鈍,及び徐冷を順次行って内部の残留応
力を除去する焼鈍を連続して行う。そして、リードフレ
ームの所定の範囲にめっきを施し、その後インナーリー
ドを所定の位置に固定するテーピング又は樹脂固定等の
リードフレーム所要の処理加工を施する。そして更に、
素子搭載ステージ及びキャビテーを所定の形状に形成
し、中間片を除去して所要のリードフレームを得る。
Thereafter, a predetermined tension is uniformly applied to the strip-shaped lead frame, the frame is continuously or intermittently conveyed for a required length, and preheating, annealing, and gradual cooling are sequentially performed to perform annealing for removing residual stress inside. Do it continuously. Then, plating is applied to a predetermined area of the lead frame, and thereafter, necessary processing for the lead frame such as taping or resin fixing for fixing the inner lead at a predetermined position is performed. And further,
The element mounting stage and the cavities are formed into a predetermined shape, and the intermediate piece is removed to obtain a required lead frame.

〔実施例〕〔Example〕

以下、図面に示す実施例により本発明の特徴を具体的
に説明する。
Hereinafter, the features of the present invention will be specifically described with reference to the embodiments shown in the drawings.

第1図は本発明の方法によって製造するリードフレー
ムの中間工程での状況を示す平面図、第2図(a)及び
(b)は素子搭載ステージの詳細を示す拡大平面図(第
1図の円Aで囲んだ部分)及び拡大断面図である。ま
た、第3図は本発明の方法によって得られたリードフレ
ームの最終製品を示す平面図である。
FIG. 1 is a plan view showing a situation in an intermediate step of a lead frame manufactured by the method of the present invention, and FIGS. 2 (a) and 2 (b) are enlarged plan views showing details of an element mounting stage (of FIG. 1). It is the part enclosed with the circle A) and an expanded sectional view. FIG. 3 is a plan view showing the final product of the lead frame obtained by the method of the present invention.

第1図及び第2図に示すように、所定の寸法幅にスリ
ットされた42ALLOY(Fe−Ni系合金)の帯状をなす金属
薄板材料を順送り金型を用いて順次不要部分を打抜き除
去してアウターリード1,インナーリード2及び半導体素
子搭載用のステージ部3と、このステージ部3を支持す
るサポートバー6を形成する。
As shown in FIG. 1 and FIG. 2, 42ALLOY (Fe-Ni alloy) strip-shaped metal thin plate material slit into a predetermined dimension width is sequentially punched and removed using a progressive die. An outer lead 1, an inner lead 2 and a stage portion 3 for mounting a semiconductor element, and a support bar 6 for supporting the stage portion 3 are formed.

インナーリード2の成形工程においては、第2図に示
すように、インナーリード2の先端8に図中の斜線で示
す領域の中間片4を設けるようにインナーリード2を延
長して打抜き、中間片4を介してステージ部3と連結し
て一体化する。更に、インナーリード2の先端部に所定
の形状を有するワイヤボンディングエリア5の薄肉部を
形成するコイニングを施して、第1図のように帯状のリ
ードフレームの連続体を形成する。
In the step of molding the inner lead 2, as shown in FIG. 2, the inner lead 2 is extended and punched so that the tip 8 of the inner lead 2 is provided with the intermediate piece 4 in the region shown by the diagonal lines in the figure. It is connected to the stage unit 3 via 4 and integrated. Further, coining for forming a thin portion of the wire bonding area 5 having a predetermined shape is applied to the tip portion of the inner lead 2 to form a continuous body of strip-shaped lead frames as shown in FIG.

上記は、アウターリード1,インナーリード2を形成し
たが、リードピン数が増加してリード幅が狭くなる場合
には、リードフレームに搬送の引っ張り力及びテンショ
ンに耐え得るように機械的強度を与えるため、第4図及
び第5図に示すように、アウターリード1を除いて帯状
のリードフレームの連続体を形成してもよい。但し、ア
ウターリード1は、次工程の焼鈍処理を施した後、打抜
き除去する。なお、第5図(a)は第4図の円Aで囲ん
だ部分の拡大平面図、第5図(b)は拡大縦断面図であ
る。
In the above, the outer lead 1 and the inner lead 2 are formed, but when the number of lead pins increases and the lead width becomes narrower, the lead frame is provided with mechanical strength so as to withstand the tensile force and tension of conveyance. As shown in FIGS. 4 and 5, a strip-shaped lead frame continuous body may be formed except for the outer leads 1. However, the outer lead 1 is punched and removed after the annealing process of the next step is performed. Note that FIG. 5 (a) is an enlarged plan view of a portion surrounded by a circle A in FIG. 4, and FIG. 5 (b) is an enlarged vertical sectional view.

次に、上記工程で形成した帯状リードフレームに均一
なテンションを付加しながら連続して焼鈍処理炉に搬送
する。焼鈍処理炉では、帯状リードフレームに対し予
熱,焼鈍及び徐冷を順次施し、更に帯状のリードフレー
ムの内部残留応力を除去する焼鈍を施す。焼鈍温度は変
態点以下の400〜500℃が好ましい。しかし、リードフレ
ームの所要条件又はリードピン数,幅等の形状及び材質
によっては、低温焼鈍による内部応力の低減程度にとど
める処理であってもよい。また、炉内の雰囲気条件は、
酸化防止を考慮して中性雰囲気の光輝焼鈍を行うとよ
い。更に、テンション付加は一般的なテンション付加装
置を用いて行い、適当な位置にテンション検出センサを
配置して自動的に均一なテンションを与えるように制御
する。
Next, the strip-shaped lead frame formed in the above step is continuously conveyed to the annealing treatment furnace while applying uniform tension. In the annealing furnace, the strip-shaped lead frame is sequentially preheated, annealed and gradually cooled, and further annealed to remove the internal residual stress of the strip-shaped lead frame. The annealing temperature is preferably 400 to 500 ° C, which is lower than the transformation point. However, depending on the required conditions of the lead frame or the shape and material such as the number and width of the lead pins, the treatment may be limited to the reduction of internal stress due to low temperature annealing. In addition, the atmospheric conditions in the furnace are
Bright annealing in a neutral atmosphere may be performed in consideration of oxidation prevention. Further, tension is applied by using a general tension applying device, and a tension detecting sensor is arranged at an appropriate position to automatically control to give a uniform tension.

次に、帯状リードフレームの状態でめっき装置に搬送
して所要の処理を施し、ワイヤボンディングエリア5及
びステージ部3に貴金属めっきを施す。更に、リード先
端を保持した状態でインナーリード2を絶縁樹脂テープ
又は樹脂で固定した後ステージ部3とキャビテー部10を
所要の寸法に形成して中間片4を除去して第3図に示す
所望のリードフレームを得ることができる。
Next, the strip-shaped lead frame is conveyed to a plating device and subjected to a required treatment, and the wire bonding area 5 and the stage portion 3 are plated with a noble metal. Further, after fixing the inner leads 2 with an insulating resin tape or resin while holding the lead tips, the stage part 3 and the cavitation part 10 are formed to a desired size and the intermediate piece 4 is removed to obtain the desired shape shown in FIG. Lead frame can be obtained.

〔発明の効果〕〔The invention's effect〕

以上のように、本発明によれば、インナーリードの先
端に中間片を備えて半導体素子搭載ステージ部の周辺に
インナーリードリードを一体化した製造方法なので、焼
鈍工程における引っ張り力及び付加テンションに耐える
機械的強度をリードフレームに与えることができる。こ
のため、焼鈍工程の変形,切断及びピッチ寸法等の変化
がなく、高精度の製品が得られる。
As described above, according to the present invention, the intermediate lead piece is provided at the tip of the inner lead, and the inner lead lead is integrated around the semiconductor element mounting stage part. Therefore, the present invention withstands tensile force and additional tension in the annealing step. Mechanical strength can be imparted to the leadframe. Therefore, a highly accurate product can be obtained without deformation, cutting, or change in pitch dimension in the annealing process.

また、中間片は、リード先端薄肉部を正確な形状に形
成する際のミスマッチの逃げ及び余肉の逃げに利用で
き、更に一層精度が高くなる。
Further, the intermediate piece can be used for escape of mismatch and escape of excess thickness when forming the thin portion of the lead tip into an accurate shape, and the accuracy is further enhanced.

更に、帯状リードフレームとしてラインをパスさせる
連続処理ができ、短冊状リードフレームのように手作業
による熱処理治具への積層を必要とせず、呼吸,汗等に
よる発錆を防ぎ、作業性が良くなる。また、位置精度が
高い状態でインナーリードを樹脂テーブル又は樹脂固定
してステージ及びキャビテーを形成するので、ワイヤボ
ンディングが安定する。
Furthermore, continuous processing that passes through the line as a strip-shaped lead frame is possible, and unlike the strip-shaped lead frame, there is no need for manual lamination on a heat treatment jig, rusting due to breathing, sweat, etc. is prevented, and workability is good. Become. In addition, since the inner lead is fixed to the resin table or the resin to form the stage and the cavitation with high positional accuracy, wire bonding is stabilized.

そして更に、内部応力が低減されえるので、半導体装
置組立て工程の加熱工程を経てもインナーリード先端の
位置変化がなく、高品質のリードフレームを提供するこ
とができる。
Further, since the internal stress can be reduced, it is possible to provide a high quality lead frame without the positional change of the tips of the inner leads even after the heating process of the semiconductor device assembling process.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の方法によって製造するリードフレーム
の中間工程での状況を示す平面図、第2図(a)は素子
搭載ステージ部の詳細を示す平面図、第2図(b)はそ
の縦断面図、第3図は本発明の方法によって得られたリ
ードフレームの平面図、第4図は他の例を示す中間工程
でのリードフレームの平面図、第5図(a)及び(b)
は要部の拡大平面図及び拡大縦断面図である。 1:アウターリード、2:インナーリード 3:ステージ部、4:中間片 5:ワイヤボンディングエリア 6:サポートバー、7:樹脂テープ又は樹脂 8:先端、10:キャビテー部
FIG. 1 is a plan view showing a situation in an intermediate step of a lead frame manufactured by the method of the present invention, FIG. 2 (a) is a plan view showing details of an element mounting stage portion, and FIG. 2 (b) is its plan view. FIG. 3 is a vertical sectional view, FIG. 3 is a plan view of a lead frame obtained by the method of the present invention, FIG. 4 is a plan view of a lead frame in an intermediate step showing another example, and FIGS. )
FIG. 3 is an enlarged plan view and an enlarged vertical sectional view of a main part. 1: Outer lead, 2: Inner lead 3: Stage part, 4: Intermediate piece 5: Wire bonding area 6: Support bar, 7: Resin tape or resin 8: Tip, 10: Cavitation part

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】帯状をなす金属薄板材の不要部分を順次除
去して、サポートバーによって前記金属薄板材の一部と
して保持された半導体素子搭載ステージと、該ステージ
の外周縁から放射状に配列した複数のインナリードと、
これらのインナリードの外側に連ねてアウタリードとを
形成し、これらの形成工程の中間で熱処理を施して所要
のリードフレームを形成する製造方法において、 前記インナリードの先端部であって前記ステージとの接
合部分を中間片としてこれらのインナリードとステージ
とを一体に形成したものとすると共に、前記インナリー
ドの先端を含んだその近傍領域及び前記中間片の一部を
含む部分までにかけてを薄肉部として成形加工し且つ前
記インナリードの先端の薄肉部をワイヤボンディングエ
リアとして帯状リードフレームを構成し、 該帯状リードフレームに所定のテンションに均一に付加
し、該帯状リードフレームを連続又は所要の長さ間欠搬
送して余熱,焼鈍及び徐冷を順次行って内部の残留応力
を除去する焼鈍を連続して行った後、めっき,テーピン
グ等のリードフレーム所要の処理加工を施し、 更に、前記中間片と前記インナリードの先端の薄肉部の
うち前記中間片側とを含めて打ち抜き成形によって切除
して前記ステージの外周縁と前記インナリードの切除端
との間にキャビテーを形成することを特徴とする半導体
装置用リードフレームの製造方法。
1. A semiconductor element mounting stage held as a part of the metal thin plate member by a support bar, in which unnecessary portions of the strip-shaped metal thin plate member are sequentially removed, and radially arranged from the outer peripheral edge of the stage. Multiple inner leads,
In a manufacturing method in which outer leads are formed continuously with the outer sides of these inner leads, and a heat treatment is performed in the middle of these forming steps to form a required lead frame, the tip portion of the inner leads and the stage The inner lead and the stage are integrally formed with the joining portion as an intermediate piece, and a thin portion is formed up to a portion including a portion of the inner piece and its vicinity including the tip of the inner lead. A band-shaped lead frame is formed by molding and using the thin portion at the tip of the inner lead as a wire bonding area, and the band-shaped lead frame is evenly applied to a predetermined tension, and the band-shaped lead frame is continuously or intermittently formed for a required length. After carrying and sequentially performing residual heat, annealing, and slow cooling to remove internal residual stress, The lead frame is subjected to necessary processing such as plating and taping, and further, the intermediate piece and the thin piece portion of the tip of the inner lead, including the intermediate piece side, are cut out by punching, and the outer peripheral edge of the stage and A method of manufacturing a lead frame for a semiconductor device, which comprises forming a cavitation between the inner lead and a cut end.
JP1203587A 1989-08-04 1989-08-04 Method for manufacturing lead frame for semiconductor device Expired - Fee Related JP2520482B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1203587A JP2520482B2 (en) 1989-08-04 1989-08-04 Method for manufacturing lead frame for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1203587A JP2520482B2 (en) 1989-08-04 1989-08-04 Method for manufacturing lead frame for semiconductor device

Publications (2)

Publication Number Publication Date
JPH0366153A JPH0366153A (en) 1991-03-20
JP2520482B2 true JP2520482B2 (en) 1996-07-31

Family

ID=16476549

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2520482B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068962A (en) * 2001-08-30 2003-03-07 Rohm Co Ltd Frame and method for manufacturing semiconductor device
JP2011101065A (en) * 2011-02-24 2011-05-19 Rohm Co Ltd Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972754A (en) * 1982-10-19 1984-04-24 Shinko Electric Ind Co Ltd Manufacture of lead frame
JPS61125161A (en) * 1984-11-22 1986-06-12 Mitsui Haitetsuku:Kk Manufacture of lead frame
JPS61216353A (en) * 1985-03-20 1986-09-26 Shinko Electric Ind Co Ltd Manufacture of lead frame
JPS6224656A (en) * 1985-07-24 1987-02-02 Shinko Electric Ind Co Ltd Manufacture of lead frame

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972754A (en) * 1982-10-19 1984-04-24 Shinko Electric Ind Co Ltd Manufacture of lead frame
JPS61125161A (en) * 1984-11-22 1986-06-12 Mitsui Haitetsuku:Kk Manufacture of lead frame
JPS61216353A (en) * 1985-03-20 1986-09-26 Shinko Electric Ind Co Ltd Manufacture of lead frame
JPS6224656A (en) * 1985-07-24 1987-02-02 Shinko Electric Ind Co Ltd Manufacture of lead frame

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068962A (en) * 2001-08-30 2003-03-07 Rohm Co Ltd Frame and method for manufacturing semiconductor device
JP2011101065A (en) * 2011-02-24 2011-05-19 Rohm Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0366153A (en) 1991-03-20

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