JP2883065B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2883065B2 JP2883065B2 JP10007703A JP770398A JP2883065B2 JP 2883065 B2 JP2883065 B2 JP 2883065B2 JP 10007703 A JP10007703 A JP 10007703A JP 770398 A JP770398 A JP 770398A JP 2883065 B2 JP2883065 B2 JP 2883065B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- base film
- semiconductor device
- lead
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は樹脂封止して成る半
導体装置に関する。The present invention relates to a semiconductor device formed by resin sealing.
【０００２】[0002]
【従来の技術】半導体チップの高集積化および大型化に
ともない、半導体装置用パッケージは、より多ピンのも
のが要求されている。このため、半導体チップを搭載す
るリードフレームなどでもリードの配置密度がますます
高くなっている。しかしながら、リードフレームでは用
いる金属板材の板厚程度までしかリード間隔を狭くでき
ない。2. Description of the Related Art As semiconductor chips become more highly integrated and larger, semiconductor device packages are required to have more pins. For this reason, even in a lead frame or the like on which a semiconductor chip is mounted, the arrangement density of the leads is increasing. However, in the lead frame, the lead interval can be reduced only to about the thickness of the metal plate used.
【０００３】これに対し、多数本のリードを高密度で形
成し得るものとしてＴＡＢ用テープが提供されている。
このＴＡＢ用テープは電気的絶縁性を有するベースフィ
ルム上に導体回路を形成するもので、材厚が薄い導体回
路であってもベースフィルムで支持することによって、
リードフレームとくらべるとさらに微細で高密度に導体
回路を形成することができる。On the other hand, a TAB tape has been provided as a device capable of forming a large number of leads at a high density.
This TAB tape is to form a conductor circuit on a base film having electrical insulation, and by supporting a conductor circuit having a small material thickness with the base film,
As compared with the lead frame, a finer and higher-density conductive circuit can be formed.
【０００４】[0004]
【発明が解決しようとする課題】このＴＡＢ用テープは
通常、チップに一括してリードをボンディングするよう
にして用いられるもであるが、リードパターンがきわめ
て微細であるために、チップとインナーリードを的確に
ボンディングすることが技術的に難しく、また、ボンデ
ィング後に樹脂封止するトランスファモールドの技術も
難しいという問題点がある。This TAB tape is usually used in such a manner that leads are collectively bonded to a chip. However, since the lead pattern is extremely fine, the chip and the inner leads are not bonded. There is a problem that it is technically difficult to perform accurate bonding, and it is also difficult to perform a transfer molding technique of resin sealing after bonding.
【０００５】そこで、本発明は上記問題点に鑑みてなさ
れたものであり、その目的とするところは、チップとイ
ンナーリードとの接続が容易にでき、半導体装置の多ピ
ン化を好適に図ることができ、また、薄型でコンパクト
に形成でき、製造も容易な半導体装置を提供するにあ
る。Accordingly, the present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to facilitate connection between a chip and inner leads and to appropriately increase the number of pins in a semiconductor device. Another object of the present invention is to provide a semiconductor device which can be formed thin, compact, and easy to manufacture.
【０００６】[0006]
【課題を解決するための手段】本発明は上記目的を達成
するため次の構成を備える。すなわち、電気的絶縁性を
有するベースフィルムの片面上に導体層を被覆形成し、
該導体層により、一端がチップと電気的に接続されるイ
ンナーリードとなり、他端が前記ベースフィルムから延
出されるアウターリードとなる導体回路を形成し、該導
体回路が形成されたベースフィルム面側にチップを搭載
し、チップと前記インナーリードとをワイヤボンディン
グするとともに、前記アウターリードを封止樹脂から延
出させ、チップが搭載されたベースフィルム面側の反対
側の面を封止樹脂から露出させて、封止樹脂が前記ベー
スフィルム面上の範囲になるようにチップ搭載部を樹脂
封止して成ることを特徴とする。また、チップが搭載さ
れたベースフィルム面側の反対側の面に放熱体を接合し
たことを特徴とする。The present invention has the following arrangement to achieve the above object. That is, a conductor layer is formed on one surface of a base film having electrical insulation,
With the conductor layer, one end forms an inner lead electrically connected to the chip, and the other end forms a conductor circuit serving as an outer lead extending from the base film. The base film surface side on which the conductor circuit is formed A chip is mounted on the chip, the chip and the inner lead are wire-bonded, the outer lead is extended from the sealing resin, and a surface opposite to the base film surface on which the chip is mounted is exposed from the sealing resin. The chip mounting portion is resin-sealed so that the sealing resin is in a range on the base film surface. Further, a heat radiator is joined to a surface opposite to the base film surface on which the chip is mounted.
【０００７】[0007]
【作用】導体回路は電気的絶縁性を有するベースフィル
ムの片面上に被覆形成した導体層によって形成され、こ
れによって高密度に導体回路が形成できる。チップをベ
ースフィルムに接合した後、導体回路のインナーリード
とチップとをワイヤボンディングによって接続し、チッ
プが搭載されたベースフィルム面側の反対側の面を封止
樹脂から露出させて樹脂封止することにより、チップと
導体回路とを確実に電気的に接続して、薄型でコンパク
トな半導体装置として得ることができる。The conductor circuit is formed by a conductor layer coated on one surface of a base film having electrical insulation, and thereby a conductor circuit can be formed at a high density. After joining the chip to the base film, the inner leads of the conductive circuit and the chip are connected by wire bonding, and the surface opposite to the base film surface side on which the chip is mounted is exposed from the sealing resin and sealed with a resin. Thus, the chip and the conductor circuit can be reliably electrically connected, and a thin and compact semiconductor device can be obtained.
【０００８】[0008]
【実施例】以下、本発明の好適な実施例を添付図面に基
づいて詳細に説明する。第１図は本発明の半導体装置に
用いるテープの一実施例を示す。１０はベースフィルム
であり、ポリイミドの長尺な薄フィルムからなる。１２
はベースフィルム１０の両側縁近傍に設けたスプロケッ
トホールである。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a tape used in the semiconductor device of the present invention. Reference numeral 10 denotes a base film made of a long and thin polyimide film. 12
Are sprocket holes provided near both side edges of the base film 10.
【０００９】１４は導体回路としてベースフィルム１０
上に形成したインナーリード、１６はアウターリード、
１８はベースフィルム１０に穿設したウインドウであ
る。アウターリード１６はウインドウ１８にかけ渡すよ
うに設けられている。Reference numeral 14 denotes a base film 10 as a conductor circuit.
The inner lead formed above, the outer lead 16,
Reference numeral 18 denotes a window formed in the base film 10. The outer lead 16 is provided so as to extend over the window 18.
【００１０】ＴＡＢ用テープで一般的に用いられている
ものでは、チップを搭載する部分にデバイスホールが穿
設されるが、本実施例のテープではチップを搭載する部
分にもベースフィルム１０がそのまま形成されている。
２０はインナーリード１４によって囲まれてベースフィ
ルム１０上に設けられたチップ接合部である。[0010] In a TAB tape generally used, a device hole is formed in a portion where a chip is mounted. However, in the tape of this embodiment, the base film 10 is also directly used in a portion where a chip is mounted. Is formed.
Reference numeral 20 denotes a chip bonding portion provided on the base film 10 surrounded by the inner leads 14.
【００１１】インナーリード１４、アウターリード１６
はベースフィルム１０上に銅箔等の導体層を形成した
後、導体層にエッチング、めっき等の処理を施して所定
形状に形成するが、チップ接合部２０も、ベースフィル
ム１０上でチップ接合部２０を形成する範囲にわたって
導体層を残すことによって形成することができる。な
お、導体層は、ベースフィルムに接着剤を介して接合し
て得るもの（３層構造）と、めっき、スパッタリング等
により接着剤を介さずに被着して得るもの（２層構造）
がある。Inner lead 14, outer lead 16
After a conductor layer such as a copper foil is formed on the base film 10, the conductor layer is formed into a predetermined shape by performing processing such as etching and plating. It can be formed by leaving the conductor layer over the area where 20 is formed. The conductor layer is obtained by bonding to a base film via an adhesive (three-layer structure), and is obtained by plating, sputtering or the like without using an adhesive (two-layer structure).
There is.
【００１２】第２図は上記テープにチップを搭載した
後、樹脂封止した半導体装置の断面図である。２２はチ
ップで、チップ接合部２０上に接合されている。２４は
チップ２２とインナーリード１４との間をワイヤボンデ
ィングしたワイヤである。２６は封止樹脂であって、ワ
イヤボンディングを行った後、ベースフィルム１０のチ
ップ２２が接合されている片面側のみに設けられる。こ
の結果、ベースフィルム１０でチップ２２の搭載面の反
対側の面は外部に露出する。封止樹脂２６による封止範
囲はベースフィルム面上の範囲に略一致している。FIG. 2 is a cross-sectional view of a semiconductor device in which a chip is mounted on the tape and then sealed with a resin. Reference numeral 22 denotes a chip, which is bonded on the chip bonding portion 20. Reference numeral 24 denotes a wire which is wire-bonded between the chip 22 and the inner lead 14. Reference numeral 26 denotes a sealing resin, which is provided only on one side of the base film 10 to which the chip 22 is joined after wire bonding. As a result, the surface of the base film 10 opposite to the surface on which the chip 22 is mounted is exposed to the outside. The area sealed by the sealing resin 26 substantially matches the area on the base film surface.
【００１３】樹脂封止した後、隣接するウインドウ１８
を仕切っているベースフィルム１０の吊り部分を切断
し、アウターリード１６の先端側を切断して、図のよう
にアウターリード１６を所定形状にフォーミングする。After resin sealing, the adjacent window 18
Is cut off, the leading end side of the outer lead 16 is cut, and the outer lead 16 is formed into a predetermined shape as shown in the figure.
【００１４】なお、インナーリード１４およびアウター
リード１６等の導体回路部分を構成する銅箔として電解
銅箔を用い、そのマット面を封止樹脂２６に接触する側
にして樹脂封止すると、マット面上に小さな凹凸がある
ことにより導体回路と封止樹脂２６とのくいつきがよく
なり、密着性が向上する。これによって、半導体装置の
耐湿性が向上する。When an electrolytic copper foil is used as a copper foil constituting a conductor circuit portion such as the inner lead 14 and the outer lead 16 and the mat surface thereof is brought into contact with the sealing resin 26, resin sealing is performed. Due to the presence of the small irregularities on the top, the adhesion between the conductor circuit and the sealing resin 26 is improved, and the adhesion is improved. Thereby, the moisture resistance of the semiconductor device is improved.
【００１５】第３図は、上記例と同様にチップ接合部２
０にチップ２２を接合してワイヤボンディングした後、
樹脂封止して成るものであるが、導体回路に外部リード
ピン２８を立設して樹脂封止した例を示す。FIG. 3 is a view similar to that of the above example, showing the chip joint 2
After bonding the chip 22 to wire 0 and wire bonding,
Although this is formed by resin sealing, an example is shown in which an external lead pin 28 is erected on a conductor circuit and resin-sealed.
【００１６】また、第４図および第５図は上記例の半導
体装置に放熱体３０を設けた例を示す。第４図に示すも
のは、樹脂封止した後、チップ２２の裏面部分に相当す
るベースフィルム１０を除去してチップ接合部２０上に
放熱体３０を接合したものである。外部リードピンの接
合部分の裏面はベースフィルム１０が接合されて保護さ
れている。第５図に示すものは、チップ２２が搭載され
た面の反対側の面全体に放熱体を３０を接合したもので
ある。FIGS. 4 and 5 show an example in which a radiator 30 is provided in the semiconductor device of the above example. FIG. 4 shows a structure in which the base film 10 corresponding to the back surface portion of the chip 22 is removed after resin sealing, and the radiator 30 is bonded on the chip bonding portion 20. The base film 10 is joined and protected on the back surface of the joint portion of the external lead pin. In FIG. 5, a radiator 30 is joined to the entire surface opposite to the surface on which the chip 22 is mounted.
【００１７】これら各実施例に示す半導体装置では、ベ
ースフィルム上にリードパターンを形成するから、リー
ドを薄く形成することができ、これによってリードを高
密度に形成することができて多ピン化の要請に好適に応
えることができる。また、半導体装置はベースフィルム
のチップが搭載された片面上でチップを樹脂封止して得
られるから、半導体装置の薄型化を図ることができる。In the semiconductor device shown in each of these embodiments, since the lead pattern is formed on the base film, the lead can be formed thinly, whereby the lead can be formed at a high density and the number of pins can be increased. It is possible to suitably meet the request. Further, since the semiconductor device is obtained by resin-sealing the chip on one surface of the base film on which the chip is mounted, the thickness of the semiconductor device can be reduced.
【００１８】さらに、チップとリードとの間はワイヤボ
ンディングによって接続するから、ワイヤボンディング
に関する従来技術がそのまま適用でき、チップとリード
とを接続する技術的な困難さを解消することができる。
また、半導体装置に放熱体を設けることも容易にでき、
半導体装置の熱放散性を向上させることによって、チッ
プの高集積化、大型化に容易に対応することができる。Furthermore, since the chip and the lead are connected by wire bonding, the prior art relating to wire bonding can be applied as it is, and the technical difficulty of connecting the chip and the lead can be eliminated.
In addition, it is easy to provide a radiator for the semiconductor device,
By improving the heat dissipation of the semiconductor device, it is possible to easily cope with high integration and large size of a chip.
【００１９】[0019]
【発明の効果】本発明によれば、上述したように構成し
たことにより、半導体装置の多ピン化が容易にできると
ともに、より薄型でコンパクトな半導体装置を得ること
ができる。また、製造工程においては、ワイヤボンディ
ング等の従来技術がそのまま適用できるから製造上の技
術的な困難さを解消することができる。また、半導体装
置に放熱体を設けることも容易にでき、これによって半
導体装置の熱放散性を向上させることができる等の著効
を奏する。According to the present invention, with the above-described structure, the number of pins of the semiconductor device can be easily increased, and a thinner and more compact semiconductor device can be obtained. In the manufacturing process, conventional techniques such as wire bonding can be applied as they are, so that technical difficulties in manufacturing can be solved. In addition, it is possible to easily provide a heat radiator in the semiconductor device, thereby achieving a remarkable effect such as improvement in heat dissipation of the semiconductor device.
【図１】本発明に係る半導体装置に用いるテープの一実
施例を示す説明図である。FIG. 1 is an explanatory view showing one embodiment of a tape used for a semiconductor device according to the present invention.
【図２】本発明に係る半導体装置の実施例の構成を示す
断面図である。FIG. 2 is a cross-sectional view showing a configuration of an embodiment of a semiconductor device according to the present invention.
【図３】本発明に係る半導体装置の実施例の構成を示す
断面図である。FIG. 3 is a cross-sectional view illustrating a configuration of an embodiment of a semiconductor device according to the present invention.
【図４】本発明に係る半導体装置の実施例の構成を示す
断面図である。FIG. 4 is a cross-sectional view showing a configuration of an embodiment of a semiconductor device according to the present invention.
【図５】本発明に係る半導体装置の実施例の構成を示す
断面図である。FIG. 5 is a sectional view showing a configuration of an embodiment of a semiconductor device according to the present invention.
１０ ベースフィルム １４ インナーリード １６ アウターリード １８ ウインドウ ２０ チップ接合部 ２２ チップ ２４ ワイヤ ２６ 封止樹脂 ２８ 外部リードピン ３０ 放熱体 DESCRIPTION OF SYMBOLS 10 Base film 14 Inner lead 16 Outer lead 18 Window 20 Chip joining part 22 Chip 24 Wire 26 Sealing resin 28 External lead pin 30 Heat radiator
Claims (2)
片面上に導体層を被覆形成し、該導体層により、一端が
チップと電気的に接続されるインナーリードとなり、他
端が前記ベースフィルムから延出されるアウターリード
となる導体回路を形成し、 該導体回路が形成されたベースフィルム面側にチップを
搭載し、 チップと前記インナーリードとをワイヤボンディングす
るとともに、前記アウターリードを封止樹脂から延出さ
せ、チップが搭載されたベースフィルム面側の反対側の
面を封止樹脂から露出させて、封止樹脂が前記ベースフ
ィルム面上の範囲になるようにチップ搭載部を樹脂封止
して成ることを特徴とする半導体装置。1. A conductive film is formed on one surface of a base film having electrical insulation, and one end of the conductive film is formed as an inner lead electrically connected to a chip, and the other end is formed from the base film. Forming a conductor circuit to be an outer lead to be extended, mounting a chip on the base film surface side on which the conductor circuit is formed, wire bonding the chip and the inner lead, and removing the outer lead from a sealing resin. Extending and exposing the surface opposite to the base film surface side on which the chip is mounted from the sealing resin, and sealing the chip mounting portion with the resin so that the sealing resin is in a range on the base film surface. A semiconductor device comprising:
の反対側の面に放熱体を接合したことを特徴とする請求
項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein a heat radiator is joined to a surface opposite to a surface of the base film on which the chip is mounted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10007703A JP2883065B2 (en) | 1998-01-19 | 1998-01-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10007703A JP2883065B2 (en) | 1998-01-19 | 1998-01-19 | Semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1145789A Division JP2784209B2 (en) | 1989-06-08 | 1989-06-08 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10256439A JPH10256439A (en) | 1998-09-25 |
| JP2883065B2 true JP2883065B2 (en) | 1999-04-19 |
Family
ID=11673119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10007703A Expired - Lifetime JP2883065B2 (en) | 1998-01-19 | 1998-01-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2883065B2 (en) |
-
1998
- 1998-01-19 JP JP10007703A patent/JP2883065B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10256439A (en) | 1998-09-25 |
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