JPH0936155A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0936155A
JPH0936155A JP18133895A JP18133895A JPH0936155A JP H0936155 A JPH0936155 A JP H0936155A JP 18133895 A JP18133895 A JP 18133895A JP 18133895 A JP18133895 A JP 18133895A JP H0936155 A JPH0936155 A JP H0936155A
Authority
JP
Japan
Prior art keywords
resin
substrate
mold
gate
frame body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18133895A
Other languages
Japanese (ja)
Inventor
Mitsutoshi Azuma
光敏 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP18133895A priority Critical patent/JPH0936155A/en
Publication of JPH0936155A publication Critical patent/JPH0936155A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a resin sealing device which is equipped with a molding die simplified in structure and capable of easily manufacturing a product of high reliability. SOLUTION: A board 12 mounted with a semiconductor element 11 on its one side is clamped between the upper die 10a and lower die 10b of a molding die, and the semiconductor element 11 mounted on the board 12 is sealed up with resin, wherein a frame 20 is fixed to the board 12 along the periphery of a resin-sealed region. A gate bearing body 20a is mounted on the board 12 extending from the frame 20 along a part which confronts a mold gate 14 to the edge of the board 12, then the gate bearing body 20a is clamped between the the upper die 10a and lower die 10b of a molding die together with the frame 20, and resin is filled up in a cavity 16 surrounded with the frame 20 and the molding die through the mold gate 14.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は半導体装置の製造方
法に関し、より詳細には半導体素子を搭載した基板の片
面を樹脂封止する半導体装置の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which one surface of a substrate on which a semiconductor element is mounted is resin-sealed.

【0002】[0002]

【従来の技術】図7、8は基板12に搭載した半導体素
子11に対し樹脂封止装置により基板12の半導体素子
搭載面を片面樹脂封止して成る製品の製造方法を示す断
面図である。図7は上型10aと下型10bとで基板1
2をクランプし、上型10aに設けたゲート部14から
半導体素子11の搭載部を含む基板12の樹脂封止領域
と対応する上型10aのキャビティ16内に樹脂17を
充填して半導体素子11を樹脂封止する方法、図8は封
止樹脂の外側面を成形する中金型18を介して上型10
aと下型10bとにより基板12をクランプし、中金型
18の上面に設けたゲート部14から中金型18により
形成されるキャビティ16内に樹脂17を充填して半導
体素子11を樹脂封止する方法を示す。
2. Description of the Related Art FIGS. 7 and 8 are sectional views showing a method for manufacturing a semiconductor element 11 mounted on a substrate 12 by resin-sealing a semiconductor element mounting surface of the substrate 12 on one side with a resin sealing device. . FIG. 7 shows a substrate 1 including an upper mold 10a and a lower mold 10b.
2 is clamped, and the resin 17 is filled in the cavity 16 of the upper mold 10a corresponding to the resin sealing region of the substrate 12 including the mounting portion of the semiconductor element 11 from the gate portion 14 provided on the upper mold 10a. 8 is a resin sealing method, FIG. 8 shows an upper mold 10 through a middle mold 18 for molding the outer surface of the sealing resin.
The substrate 12 is clamped by a and the lower mold 10b, and the resin 17 is filled in the cavity 16 formed by the middle mold 18 from the gate portion 14 provided on the upper surface of the middle mold 18 to seal the semiconductor element 11 with the resin. Here's how to stop it.

【0003】図7と図8に示す樹脂封止方法を比較する
と、図7に示す方法では樹脂封止する際に基板12のゲ
ート部14が当接する部分にじかに樹脂17が付着する
のに対し、図8に示す方法では中金型18を基板12の
表面に当接させ中金型18を介してゲート部14が配設
されて樹脂封止されることにより基板12に樹脂17を
付着させずに樹脂封止できるという特徴がある。このよ
うに、図8に示す方法によれば樹脂封止時に基板12に
樹脂17が付着しないから、樹脂封止後に基板12から
樹脂ばりを剥離して除去する必要がなく、また基板12
に配線パターンを形成する際にゲート部14の通過位置
を避けて配置するといった必要がないという利点があ
る。
Comparing the resin sealing method shown in FIGS. 7 and 8, the resin 17 directly adheres to the portion of the substrate 12 which is in contact with the gate portion 14 when the resin is sealed in the method shown in FIG. In the method shown in FIG. 8, the middle mold 18 is brought into contact with the surface of the substrate 12 and the gate portion 14 is disposed through the middle mold 18 and resin-sealed to attach the resin 17 to the substrate 12. It has the feature that it can be sealed with resin without using it. As described above, according to the method shown in FIG. 8, since the resin 17 is not attached to the substrate 12 during the resin sealing, it is not necessary to peel and remove the resin burr from the substrate 12 after the resin sealing.
There is an advantage in that it is not necessary to arrange the wiring pattern while avoiding the passing position of the gate portion 14 when forming the wiring pattern.

【0004】基板12の表面には半導体素子11と外部
接続端子とを接続する微細な配線パターンが設けられて
いるから、図8に示す樹脂封止方法によれば樹脂封止後
に樹脂ばりを除去する工程が不要となることで、基板1
2に損傷を与えたり、樹脂ばりを除去する際に基板12
表面に形成した配線パターンを被覆しているソルダーレ
ジストなどの保護膜を樹脂ばりと共に剥がすなどの問題
がなくなり好適である。また、ゲート部14の通過位置
に関わりなく基板12上に配線パターンを形成できるこ
とから配線パターンの引き回しの自由度がもたせられる
などの利点がある。
Since a fine wiring pattern for connecting the semiconductor element 11 and the external connection terminal is provided on the surface of the substrate 12, according to the resin sealing method shown in FIG. 8, the resin burr is removed after the resin sealing. By eliminating the step of performing
Substrate 12 when damaging 2 or removing resin flash
This is preferable because there is no problem such as peeling off a protective film such as a solder resist covering the wiring pattern formed on the surface together with a resin flash, and the like. Further, since the wiring pattern can be formed on the substrate 12 regardless of the position where the gate portion 14 passes, there is an advantage that the wiring pattern can be routed freely.

【0005】なお、図9は基板12の半導体素子11の
搭載面を片面樹脂封止する他の方法として枠体20を用
いる方法を示す。この樹脂封止方法では半導体素子11
を囲む枠状に形成した枠体20を基板12に接着し、枠
体20の内部に樹脂17をポッティング法により樹脂を
滴下して半導体素子11を樹脂封止する。枠体20は樹
脂17の流れ止めとして作用し、これによって樹脂を成
形するとともに半導体素子11を樹脂封止することがで
きる。
FIG. 9 shows a method of using the frame body 20 as another method of sealing the mounting surface of the semiconductor element 11 on the substrate 12 with resin on one side. In this resin sealing method, the semiconductor element 11
A frame body 20 formed in a frame shape surrounding the is bonded to the substrate 12, and a resin 17 is dropped inside the frame body 20 by a potting method to seal the semiconductor element 11 with the resin. The frame body 20 acts as a flow stop for the resin 17, whereby the resin can be molded and the semiconductor element 11 can be resin-sealed.

【0006】[0006]

【発明が解決しようとする課題】ところで、図8に示す
中金型18を用いる方法は基板12に樹脂17を付着さ
せることなく樹脂封止できる点で有効であるが、金型と
して上型10aと下型10bの他に中金型18を使わな
ければならず金型構造が複雑になることと、樹脂封止操
作ごと中金型を着脱しなければならないといった操作上
の煩雑さがあった。また、ダム枠を設けた場合でも、金
型を用いたトランスファモールド法により樹脂封止する
と、金型のゲート部が基板12の表面に対向するため樹
脂封止後に樹脂ばりが基板12上に残る問題がある。
By the way, the method using the middle mold 18 shown in FIG. 8 is effective in that the resin 17 can be sealed without adhering the resin 17 to the substrate 12, but the upper mold 10a is used as a mold. In addition to the lower mold 10b, the middle mold 18 has to be used and the mold structure is complicated, and the middle mold has to be attached and detached for each resin sealing operation. . Further, even if the dam frame is provided, if resin molding is performed by a transfer molding method using a mold, the gate portion of the mold faces the surface of the substrate 12, and thus resin burrs remain on the substrate 12 after resin molding. There's a problem.

【0007】本発明はこれらの問題点を解消すべくなさ
れたものであり、その目的とするところは、樹脂封止装
置で用いる金型の構造を簡素化することにより製品の製
造を容易にするとともに、信頼性の高い製品の製造を容
易にする半導体装置の製造方法を提供するにある。
The present invention has been made to solve these problems, and an object of the present invention is to simplify the structure of a mold used in a resin sealing device to facilitate the manufacture of products. Another object of the present invention is to provide a semiconductor device manufacturing method that facilitates the manufacture of highly reliable products.

【0008】[0008]

【課題を解決するための手段】本発明は上記目的を達成
するため次の構成を備える。すなわち、金型の上型と下
型とで片面に半導体素子を搭載した基板をクランプし、
基板の半導体素子を搭載した面を樹脂封止する半導体装
置の製造方法において、前記半導体素子の搭載部を含む
樹脂封止領域の周縁の基板上に、該樹脂封止領域の周縁
に沿って枠状に形成した枠体を固着するとともに、前記
基板上で金型のゲート部が対向する部位に沿って前記枠
体から基板縁部に延出するゲート当接体を取り付けた
後、前記上型と下型とで前記枠体とともに前記ゲート当
接体をクランプし、前記枠体と金型とで囲まれて形成さ
れたキャビティ内に前記ゲート部を経由して樹脂を充填
することを特徴とする。また、基板に半導体素子を搭載
した後、前記基板に前記枠体および前記ゲート当接体を
固着することを特徴とする。また、基板に前記枠体およ
び前記ゲート当接体を固着した後、前記基板に半導体素
子を搭載することを特徴とする。また、前記ゲート当接
体の上面に金めっきを施したことを特徴とする。また、
前記ゲート当接体の上面にキャビティに通じる溝部を設
け、該溝部に封止樹脂を流入させてキャビティ内に樹脂
を充填することを特徴とする。また、前記ゲート当接体
の溝部を含む上面に金めっきを施したことを特徴とす
る。
The present invention has the following constitution in order to achieve the above object. That is, the upper die and the lower die of the mold clamp the substrate on which the semiconductor element is mounted on one side,
In a method of manufacturing a semiconductor device in which a surface of a substrate on which a semiconductor element is mounted is resin-sealed, a frame is formed along a peripheral edge of the resin sealing region on a substrate at a peripheral edge of the resin sealing region including a mounting portion of the semiconductor element. After fixing the frame body formed in a shape, and attaching a gate contact body extending from the frame body to the edge portion of the substrate along a portion of the substrate facing the gate portion of the die, the upper die And the lower die clamps the gate contact body together with the frame body, and the resin is filled through the gate portion into a cavity formed by being surrounded by the frame body and the mold. To do. Moreover, after mounting the semiconductor element on the substrate, the frame body and the gate contact body are fixed to the substrate. Further, the semiconductor element is mounted on the substrate after fixing the frame body and the gate contact body to the substrate. Further, the upper surface of the gate contact body is plated with gold. Also,
A groove portion communicating with the cavity is provided on the upper surface of the gate contact body, and sealing resin is caused to flow into the groove portion to fill the cavity with the resin. Further, the upper surface of the gate contact body including the groove portion is plated with gold.

【0009】本発明に係る半導体装置の製造方法では基
板の樹脂封止領域の周縁に沿って枠体を固着するととも
に基板にゲート当接体を固着し、枠体とゲート当接体を
固着した基板を金型の上型と下型とでクランプし、枠体
と金型によって形成されたキャビティ内に樹脂を充填し
て樹脂封止する。枠体は樹脂封止時に樹脂の流れ止めと
して作用し所定形状に樹脂成形して半導体素子を樹脂封
止する。封止樹脂はゲート当接体に対向して配置された
金型のゲート部からキャビティ内に充填されるから、基
板上に樹脂ばりを生じさせずに樹脂封止することができ
る。樹脂封止後ゲート当接体等の不要部分を除去して製
品とする。
In the method of manufacturing a semiconductor device according to the present invention, the frame body is fixed along the periphery of the resin sealing region of the substrate, the gate abutting body is fixed on the substrate, and the frame body and the gate abutting body are fixed. The substrate is clamped by the upper mold and the lower mold of the mold, and the cavity is formed by the frame and the mold is filled with resin and sealed with resin. The frame body acts as a resin flow stop at the time of resin sealing, and is molded into a predetermined shape by resin molding to seal the semiconductor element with resin. Since the sealing resin is filled in the cavity from the gate portion of the mold arranged to face the gate contact body, the resin can be sealed without causing resin burrs on the substrate. After sealing with resin, unnecessary parts such as the gate contact body are removed to make the product.

【0010】[0010]

【発明の実施の形態】以下、本発明の好適な実施の形態
を添付図面に基づいて詳細に説明する。本発明に係る半
導体装置の製造方法は基板の半導体素子の搭載部を含む
樹脂封止領域の周縁に樹脂封止領域の周縁に沿って枠体
を固着して樹脂封止することを特徴とする。図1は枠体
20を取り付けた基板12を上型10aおよび下型10
bでクランプして樹脂封止する様子を示す。14は上型
10aに設けたゲート部、16はキャビティである。
Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. A method of manufacturing a semiconductor device according to the present invention is characterized in that a frame body is fixed to the periphery of a resin sealing region including a mounting portion of a semiconductor element of a substrate along the periphery of the resin sealing region for resin sealing. . In FIG. 1, a substrate 12 having a frame body 20 is attached to an upper mold 10a and a lower mold 10
A state of clamping with b and resin sealing is shown. Reference numeral 14 is a gate portion provided on the upper mold 10a, and 16 is a cavity.

【0011】この実施形態での基板12はBGA(Ball
Grid Array)型、PPGA(Plastic Pin Gridb Array)
型等の半導体装置などに用いられる基板で、基板12の
一方の面に半導体素子11の搭載部および半導体素子1
1と外部接続端子とを接続する配線パターンが設けら
れ、他方の面に外部接続端子を接続するためのランドが
設けられている。ランドと配線パターンとは基板12に
設けたスルーホールを介して電気的に接続される。な
お、基板12はプリント回路基板で単層形状でも多層形
状でも用いられる。配線パターンは基板表面に銅箔等の
導体層を設け、導体層をエッチングして所定のパターン
に形成することができる。基板12の表面は配線パター
ンのボンディング部およびランド等の所要部分を除いて
ソルダーレジスト等の保護膜によって被覆される。
The substrate 12 in this embodiment is a BGA (Ball).
Grid Array) type, PPGA (Plastic Pin Gridb Array)
A substrate used for a semiconductor device such as a mold, the mounting portion of the semiconductor element 11 and the semiconductor element 1 on one surface of the substrate 12.
A wiring pattern for connecting 1 to the external connection terminal is provided, and a land for connecting the external connection terminal is provided on the other surface. The land and the wiring pattern are electrically connected to each other through a through hole provided in the substrate 12. The board 12 is a printed circuit board and may be used in either a single-layer form or a multi-layer form. The wiring pattern can be formed into a predetermined pattern by providing a conductor layer such as copper foil on the surface of the substrate and etching the conductor layer. The surface of the substrate 12 is covered with a protective film such as a solder resist except for the bonding portions of the wiring pattern and required portions such as lands.

【0012】図2は枠体20を取り付けた基板12の平
面図、図3は斜視図である。この実施形態では各々半導
体素子11が搭載され最終的に個片に分離されて製品と
なる基板をサイドレール部で支持した短冊状の基板を用
いている。また、この例では半導体素子11と配線パタ
ーン14とはワイヤボンディングによって電気的に接続
しているが、他の接続方法を使用することも可能であ
る。枠体20は基板12とは別体で枠状に形成した部材
である。枠体20は基板12の各々の半導体素子11ご
と、半導体素子11の搭載部を含む樹脂封止領域の周縁
の基板12上に樹脂封止領域の周縁に沿って固着する。
なお、枠体20を基板12に固着する場合、基板12に
半導体素子11を搭載した後に固着してもよいし、基板
12に枠体20を固着した後に半導体素子11を搭載し
てもよい。
FIG. 2 is a plan view of the substrate 12 to which the frame body 20 is attached, and FIG. 3 is a perspective view. In this embodiment, a strip-shaped substrate is used in which the semiconductor elements 11 are mounted and the substrates that are finally separated into individual pieces to be products are supported by the side rail portions. Further, in this example, the semiconductor element 11 and the wiring pattern 14 are electrically connected by wire bonding, but other connection methods can be used. The frame body 20 is a member formed in a frame shape separately from the substrate 12. The frame body 20, for each semiconductor element 11 of the substrate 12, is fixed on the substrate 12 at the periphery of the resin sealing region including the mounting portion of the semiconductor element 11 along the periphery of the resin sealing region.
When the frame body 20 is fixed to the substrate 12, the semiconductor element 11 may be fixed to the substrate 12 after mounting the semiconductor element 11, or the semiconductor element 11 may be mounted to the substrate 12 after fixing the frame body 20.

【0013】図1に示すように枠体20は樹脂封止の際
に樹脂を成形するキャビティ16の一部を構成し、枠体
20によって樹脂封止領域の周縁部分が規定される。し
たがって、枠体20は製品に応じてその寸法および配置
位置等を適宜設定しなければならない。図1に示す例で
は上型10aにキャビティ凹部を設けて所要のキャビテ
ィ空間を確保している。なお、上型10aのキャビティ
16に対向する面にキャビティ凹部を設けず平坦面で形
成した場合は枠体20の上面と同一の高さまで樹脂17
が充填されることになるから、枠体20は樹脂17によ
って半導体素子11が埋没される厚さに設定する必要が
ある。
As shown in FIG. 1, the frame body 20 constitutes a part of the cavity 16 for molding the resin at the time of resin sealing, and the frame body 20 defines the peripheral portion of the resin sealing region. Therefore, the frame body 20 must be appropriately set in terms of its size, arrangement position and the like according to the product. In the example shown in FIG. 1, a cavity cavity is provided in the upper mold 10a to secure a required cavity space. When the cavity is not provided on the surface of the upper mold 10a facing the cavity 16 and is formed as a flat surface, the resin 17 is formed to the same height as the upper surface of the frame body 20.
Therefore, it is necessary to set the frame body 20 to a thickness such that the semiconductor element 11 is buried in the resin 17.

【0014】上型10aと下型10bで基板12をクラ
ンプする場合は、図1に示すように枠体20を介して上
型10aと下型10bでクランプし、これにより枠体2
0と上型10aによってキャビティ16が形成される。
キャビティ16内には上型10aに設けたゲート部14
から樹脂17を充填するが、この例では上型10aのゲ
ート部14が対向する部位に枠体20からゲート当接体
20aを基板12の縁部まで延設し、枠体20とともに
ゲート当接体20aを基板12に固着するようにした。
ゲート当接体20aの厚さは枠体20と同じであっても
よいし、枠体20よりも薄くした場合には、後述するよ
うにキャビティ凹部に通じる溝部をゲート当接体20a
に設けてもよい。ゲート当接体20aの上面でゲート部
14が通過する部位には硬化樹脂が容易に剥離できるよ
うに金めっき24等を施すのがよい。
When the substrate 12 is clamped by the upper mold 10a and the lower mold 10b, it is clamped by the upper mold 10a and the lower mold 10b via the frame 20 as shown in FIG.
The cavity 16 is formed by 0 and the upper mold 10a.
The gate portion 14 provided in the upper mold 10a is provided in the cavity 16.
Although the resin 17 is filled in from the above, in this example, the gate abutment body 20a is extended from the frame body 20 to the edge portion of the substrate 12 at a position where the gate portion 14 of the upper mold 10a faces the gate body 14 and the gate abutment body 20a The body 20a was fixed to the substrate 12.
The thickness of the gate abutment body 20a may be the same as that of the frame body 20, or when the gate abutment body 20a is made thinner than the frame body 20, a groove portion communicating with the cavity recess is formed as described later.
May be provided. It is preferable to apply gold plating 24 or the like on the upper surface of the gate contact body 20a where the gate portion 14 passes so that the cured resin can be easily peeled off.

【0015】図1はゲート当接体20aを通過する位置
(図2のA−A線)での断面図である。26は枠体2
0、ゲート当接体20aを基板12に接着する接着剤で
ある。実施例では上型10aのゲート部14がゲート当
接体20aの上面を通過してキャビティ16に通じるよ
うにし、ゲート部14とキャビティ16とを連絡するゲ
ート口を枠体20の上面のキャビティ16のコーナー部
に配置した。こうして、ゲート部14からキャビティ1
6に圧送される樹脂17はゲート当接体20aの上面を
通過してキャビティ16の内に充填される。図4は樹脂
封止後の基板12の斜視図を示す。封止樹脂は枠体20
および上型10aのキャビティ凹部によって成形されて
いる。
FIG. 1 is a sectional view at a position (line AA in FIG. 2) passing through the gate contact body 20a. 26 is a frame 2
0, an adhesive that adheres the gate contact body 20a to the substrate 12. In the embodiment, the gate portion 14 of the upper mold 10a passes through the upper surface of the gate contact body 20a and communicates with the cavity 16, and the gate opening for connecting the gate portion 14 and the cavity 16 is provided with the cavity 16 on the upper surface of the frame body 20. It was placed in the corner part of. Thus, from the gate portion 14 to the cavity 1
The resin 17 pressure-fed to 6 passes through the upper surface of the gate contact body 20 a and is filled in the cavity 16. FIG. 4 shows a perspective view of the substrate 12 after resin sealing. The sealing resin is the frame 20
And is formed by the cavity recess of the upper mold 10a.

【0016】樹脂封止後は、基板12からゲート当接体
20aおよびサイドレール部等の不要部分を除去し、個
片に分離して製品とする。図2で基板12から個片に分
離する位置を線Bで示す。基板12から製品を個片に分
離する際には枠体20の周縁から若干離して分離しても
よいし、枠体20の周縁に沿って分離してもよい。基板
12から製品を個片に分離した後、外部接続端子を接合
して製品とする。
After the resin is sealed, unnecessary parts such as the gate abutment body 20a and side rails are removed from the substrate 12 and separated into individual pieces to obtain a product. The position where the substrate 12 is separated into individual pieces is indicated by a line B in FIG. When the product is separated into individual pieces from the substrate 12, the products may be separated slightly from the peripheral edge of the frame body 20 or may be separated along the peripheral edge of the frame body 20. After separating the product from the substrate 12 into individual pieces, the external connection terminals are joined to obtain a product.

【0017】図5は枠体20を取り付けた基板12を用
いて樹脂封止する他の実施形態を示す。この実施形態に
おいても上記例と同様に枠体20とゲート当接体20a
を固着した基板12を使用する。上型10aと下型10
bとで枠体20およびゲート当接体20aを介して基板
12をクランプし、ゲート当接体20aからキャビティ
16内に樹脂を充填して樹脂封止する。なお、この例で
は上型10aにキャビティ凹部を設けずにキャビティ内
面を平坦面に形成して樹脂封止する。
FIG. 5 shows another embodiment in which resin sealing is performed using the substrate 12 to which the frame body 20 is attached. Also in this embodiment, similar to the above example, the frame body 20 and the gate contact body 20a are provided.
The substrate 12 to which is fixed is used. Upper mold 10a and lower mold 10
The substrate 12 is clamped with b through the frame body 20 and the gate contact body 20a, and the cavity 16 is filled with resin from the gate contact body 20a to seal the resin. In this example, the cavity is not provided in the upper mold 10a, and the inner surface of the cavity is formed into a flat surface for resin sealing.

【0018】この実施形態ではキャビティ16に樹脂を
充填する樹脂路としてゲート当接体20aの上面にゲー
ト当接体20aの端部からキャビティ16まで通じる溝
部30を設け、溝部30を樹脂路としてキャビティ16
内に樹脂17を充填する。図6に樹脂封止後の基板12
の斜視図を示す。枠体20の上面と封止樹脂とが同一高
さで樹脂成形されている。ゲート当接体20aに設ける
溝部30は断面V字状、U字状等の適宜形状に形成でき
る。
In this embodiment, as a resin path for filling the cavity 16 with resin, a groove 30 is provided on the upper surface of the gate contact body 20a from the end of the gate contact body 20a to the cavity 16, and the groove 30 is used as the resin path. 16
The inside is filled with the resin 17. The substrate 12 after resin sealing is shown in FIG.
FIG. The upper surface of the frame 20 and the sealing resin are resin-molded at the same height. The groove 30 provided in the gate contact body 20a can be formed in an appropriate shape such as a V-shape or a U-shape in cross section.

【0019】樹脂封止後は溝部30内に樹脂17が残留
して硬化する。この溝部30で硬化した樹脂を容易に剥
離して除去できるようにするために、少なくとも溝部3
0を含むゲート当接体20aの上面に金めっきを施すの
がよい。樹脂封止後は、上記例と同様にゲート当接体2
0aやサイドレール部等の不要部分を基板12から除去
し個片に分離して製品とする。こうして得られた樹脂封
止製品は、基板12に枠体20が固着され、枠体20の
内側に樹脂17が充填されて半導体素子11が封止され
たものとなる。
After the resin is sealed, the resin 17 remains in the groove 30 and hardens. In order that the resin cured in the groove 30 can be easily peeled off and removed, at least the groove 3
It is preferable to apply gold plating to the upper surface of the gate contact body 20a including 0. After sealing with resin, the gate contact body 2 is used as in the above example.
Unwanted parts such as 0a and side rails are removed from the substrate 12 and separated into individual pieces to obtain a product. The resin-sealed product thus obtained is one in which the frame body 20 is fixed to the substrate 12, the resin 17 is filled inside the frame body 20, and the semiconductor element 11 is sealed.

【0020】なお、基板12上に固着する枠体20とゲ
ート当接体20aはあらかじめ一体に形成したものを用
いてもよいし、別体に形成した枠体20とゲート当接体
20aを基板12上に取り付けて用いてもよい。枠体2
0とゲート当接体20aを別体に形成する場合は、ゲー
ト当接体20aを基板12に仮止めする等により、樹脂
封止後に基板12からゲート当接体20aを容易に除去
できるという利点がある。
The frame body 20 and the gate contact body 20a fixed on the substrate 12 may be integrally formed in advance, or the frame body 20 and the gate contact body 20a formed separately may be used as the substrate. It may be mounted on 12 and used. Frame 2
0 and the gate abutting body 20a are separately formed, the gate abutting body 20a can be easily removed from the substrate 12 after resin sealing by temporarily fixing the gate abutting body 20a to the substrate 12. There is.

【0021】本発明に係る半導体装置の製造方法では基
板12とともに枠体20をクランプして樹脂封止するか
ら、枠体20は金型によるクランプに耐えられる一定の
強度を有するものであればよく、プリント基板等に用い
るガラス−布−エポキシ、ガラス−布−ポリイミド、ガ
ラス−布−テフロン、BTレジン等の他、金属材を用い
ることもできる。なお、枠体20を基板12と同材料で
作成した場合は、基板12と枠体20との熱膨張係数を
マッチングさせることができ半導体装置を実装した際の
信頼性を向上させることができるという利点がある。
In the method of manufacturing a semiconductor device according to the present invention, the frame body 20 is clamped together with the substrate 12 and resin-sealed. Therefore, the frame body 20 only needs to have a certain strength that can be clamped by a mold. In addition to glass-fabric-epoxy, glass-fabric-polyimide, glass-fabric-Teflon, BT resin, and the like used for printed circuit boards and the like, metal materials can also be used. In addition, when the frame body 20 is made of the same material as the substrate 12, the thermal expansion coefficients of the substrate 12 and the frame body 20 can be matched, and the reliability when mounting the semiconductor device can be improved. There are advantages.

【0022】なお、上記実施例では上型10aにゲート
部14を設けて上型10a側からキャビティ16に樹脂
17を充填したが、金型の構造は実施例のものに限定さ
れるものではなく、たとえば下型10bにゲート部14
を設けて下型10bからキャビティ16に樹脂17を充
填するといった方法を採用することもできる。また、製
品に応じて、枠体20およびゲート当接体20aの形
状、寸法等を適宜設定して樹脂封止することができる。
In the above embodiment, the upper mold 10a is provided with the gate portion 14 and the cavity 16 is filled with the resin 17 from the upper mold 10a side, but the structure of the mold is not limited to that of the embodiment. , For example, the gate portion 14 on the lower mold 10b.
It is also possible to adopt a method in which the lower mold 10b is provided and the cavity 16 is filled with the resin 17. Further, the shape, dimensions, etc. of the frame body 20 and the gate contact body 20a can be appropriately set and resin-sealed according to the product.

【0023】[0023]

【発明の効果】本発明に係る半導体装置の製造方法によ
れば、上述したように、枠体とゲート当接体を取り付け
た基板を用いることにより、基板にじかに樹脂を付着さ
せずに樹脂封止することができ、樹脂封止後に基板に付
着した樹脂を除去する必要がなく、基板を被覆する保護
膜に損傷を与えることを防止することができる。また、
ゲートの通過位置に関わりなく基板上に配線パターンが
形成できるから配線パターンの引回しの自由度が大きく
なるという利点がある。また、樹脂封止する際に中金型
を使用する必要がなく、金型の構造を簡素化することが
できるとともに、金型を用いた樹脂封止操作が簡単にな
る等の著効を奏する。
According to the method of manufacturing a semiconductor device of the present invention, as described above, by using the substrate on which the frame body and the gate contact body are attached, the resin sealing is performed without directly adhering the resin to the substrate. Therefore, it is not necessary to remove the resin adhering to the substrate after the resin sealing, and it is possible to prevent the protective film covering the substrate from being damaged. Also,
Since the wiring pattern can be formed on the substrate regardless of the gate passage position, there is an advantage that the degree of freedom in wiring the wiring pattern is increased. In addition, it is not necessary to use a middle mold for resin sealing, the structure of the mold can be simplified, and the resin sealing operation using the mold can be easily performed. .

【図面の簡単な説明】[Brief description of drawings]

【図1】枠体を取り付けた基板を金型でクランプして樹
脂封止する状態を示す断面図である。
FIG. 1 is a cross-sectional view showing a state in which a substrate to which a frame body is attached is clamped with a mold and resin-sealed.

【図2】枠体を取り付けた基板の平面図である。FIG. 2 is a plan view of a substrate to which a frame body is attached.

【図3】枠体を取り付けた基板の斜視図である。FIG. 3 is a perspective view of a substrate to which a frame body is attached.

【図4】樹脂封止後の基板の斜視図である。FIG. 4 is a perspective view of a substrate after resin sealing.

【図5】枠体を取り付けた基板を金型でクランプして樹
脂封止する他の方法を示す断面図である。
FIG. 5 is a cross-sectional view showing another method of resin-sealing by clamping a substrate having a frame attached thereto with a mold.

【図6】樹脂封止後の基板の斜視図である。FIG. 6 is a perspective view of a substrate after resin sealing.

【図7】基板を片面樹脂封止する方法の従来例を示す断
面図である。
FIG. 7 is a cross-sectional view showing a conventional example of a method for resin-sealing a substrate on one side.

【図8】基板を片面樹脂封止する方法の従来例を示す断
面図である。
FIG. 8 is a cross-sectional view showing a conventional example of a method for resin sealing a substrate on one side.

【図9】基板に枠体を取り付けて樹脂封止した半導体装
置の例を示す断面図である。
FIG. 9 is a cross-sectional view showing an example of a semiconductor device in which a frame is attached to a substrate and resin-sealed.

【符号の説明】[Explanation of symbols]

10a 上型 10b 下型 11 半導体素子 12 基板 14 ゲート部 16 キャビティ 17 樹脂 18 中金型 20 枠体 20a ゲート当接体 24 金めっき 26 接着剤 30 溝部 10a Upper mold 10b Lower mold 11 Semiconductor element 12 Substrate 14 Gate part 16 Cavity 17 Resin 18 Medium mold 20 Frame 20a Gate contacting body 24 Gold plating 26 Adhesive 30 Groove

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 金型の上型と下型とで片面に半導体素子
を搭載した基板をクランプし、基板の半導体素子を搭載
した面を樹脂封止する半導体装置の製造方法において、 前記半導体素子の搭載部を含む樹脂封止領域の周縁の基
板上に、該樹脂封止領域の周縁に沿って枠状に形成した
枠体を固着するとともに、前記基板上で金型のゲート部
が対向する部位に沿って前記枠体から基板縁部に延出す
るゲート当接体を取り付けた後、 前記上型と下型とで前記枠体とともに前記ゲート当接体
をクランプし、前記枠体と金型とで囲まれて形成された
キャビティ内に前記ゲート部を経由して樹脂を充填する
ことを特徴とする半導体装置の製造方法。
1. A method of manufacturing a semiconductor device, wherein a substrate having a semiconductor element mounted on one surface thereof is clamped by an upper die and a lower die of a mold, and the surface of the substrate on which the semiconductor element is mounted is resin-sealed. A frame body formed in a frame shape along the peripheral edge of the resin sealing region is fixed on the substrate at the peripheral edge of the resin sealing region including the mounting portion, and the gate portion of the mold faces the substrate. After attaching a gate contact body extending from the frame body to the edge portion of the substrate along the part, the gate contact body is clamped together with the frame body by the upper mold and the lower mold, and A method for manufacturing a semiconductor device, characterized in that a cavity is surrounded by a mold and resin is filled through the gate portion.
【請求項2】 基板に半導体素子を搭載した後、前記基
板に前記枠体および前記ゲート当接体を固着することを
特徴とする請求項1記載の半導体装置の製造方法。
2. The method of manufacturing a semiconductor device according to claim 1, wherein after mounting the semiconductor element on the substrate, the frame body and the gate contact body are fixed to the substrate.
【請求項3】 基板に前記枠体および前記ゲート当接体
を固着した後、前記基板に半導体素子を搭載することを
特徴とする請求項1記載の半導体装置の製造方法。
3. The method of manufacturing a semiconductor device according to claim 1, further comprising mounting the semiconductor element on the substrate after fixing the frame body and the gate contact body to the substrate.
【請求項4】 前記ゲート当接体の上面に金めっきを施
したことを特徴とする請求項1、2または3記載の半導
体装置の製造方法。
4. The method for manufacturing a semiconductor device according to claim 1, 2 or 3, wherein an upper surface of the gate contact body is plated with gold.
【請求項5】 前記ゲート当接体の上面にキャビティに
通じる溝部を設け、該溝部に封止樹脂を流入させてキャ
ビティ内に樹脂を充填することを特徴とする請求項1、
2または3記載の半導体装置の製造方法。
5. A groove portion communicating with a cavity is provided on an upper surface of the gate contact body, and a sealing resin is caused to flow into the groove portion to fill the cavity with the resin.
4. The method for manufacturing a semiconductor device according to 2 or 3.
【請求項6】 前記ゲート当接体の溝部を含む上面に金
めっきを施したことを特徴とする請求項5記載の半導体
装置の製造方法。
6. The method for manufacturing a semiconductor device according to claim 5, wherein an upper surface of the gate contact body including a groove portion is plated with gold.
JP18133895A 1995-07-18 1995-07-18 Manufacture of semiconductor device Pending JPH0936155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18133895A JPH0936155A (en) 1995-07-18 1995-07-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18133895A JPH0936155A (en) 1995-07-18 1995-07-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0936155A true JPH0936155A (en) 1997-02-07

Family

ID=16098958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18133895A Pending JPH0936155A (en) 1995-07-18 1995-07-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0936155A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200121B1 (en) 1998-06-25 2001-03-13 Nec Corporation Process for concurrently molding semiconductor chips without void and wire weep and molding die used therein
KR100393093B1 (en) * 1999-06-07 2003-07-31 앰코 테크놀로지 코리아 주식회사 manufacturing method of semiconductor package
WO2006129343A1 (en) * 2005-05-30 2006-12-07 Spansion Llc Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
SG127716A1 (en) * 2003-03-11 2006-12-29 Hitachi Cable Mold die and method for manufacturing semiconductor device using the same
JP2008060160A (en) * 2006-08-29 2008-03-13 Shinko Electric Ind Co Ltd Method of manufacturing resin-packaged semiconductor device
JP2014093451A (en) * 2012-11-05 2014-05-19 Denso Corp Manufacturing method for mold package
JP2021012992A (en) * 2019-07-09 2021-02-04 アサヒ・エンジニアリング株式会社 Resin sealing device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200121B1 (en) 1998-06-25 2001-03-13 Nec Corporation Process for concurrently molding semiconductor chips without void and wire weep and molding die used therein
US6315540B1 (en) * 1998-06-25 2001-11-13 Nec Corporation Molding die for concurrently molding semiconductor chips without voids and wire weep
KR100393093B1 (en) * 1999-06-07 2003-07-31 앰코 테크놀로지 코리아 주식회사 manufacturing method of semiconductor package
SG127716A1 (en) * 2003-03-11 2006-12-29 Hitachi Cable Mold die and method for manufacturing semiconductor device using the same
US7355278B2 (en) 2003-03-11 2008-04-08 Hitachi Cable, Ltd. Mold die for a semiconductor device
WO2006129343A1 (en) * 2005-05-30 2006-12-07 Spansion Llc Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
JPWO2006129343A1 (en) * 2005-05-30 2008-12-25 スパンション エルエルシー Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
US7622067B2 (en) 2005-05-30 2009-11-24 Spansion Llc Apparatus and method for manufacturing a semiconductor device
JP5166870B2 (en) * 2005-05-30 2013-03-21 スパンション エルエルシー Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
JP2008060160A (en) * 2006-08-29 2008-03-13 Shinko Electric Ind Co Ltd Method of manufacturing resin-packaged semiconductor device
JP2014093451A (en) * 2012-11-05 2014-05-19 Denso Corp Manufacturing method for mold package
JP2021012992A (en) * 2019-07-09 2021-02-04 アサヒ・エンジニアリング株式会社 Resin sealing device

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