JP2854545B2 - 位相反転マスク及びその製造方法 - Google Patents

位相反転マスク及びその製造方法

Info

Publication number
JP2854545B2
JP2854545B2 JP26412395A JP26412395A JP2854545B2 JP 2854545 B2 JP2854545 B2 JP 2854545B2 JP 26412395 A JP26412395 A JP 26412395A JP 26412395 A JP26412395 A JP 26412395A JP 2854545 B2 JP2854545 B2 JP 2854545B2
Authority
JP
Japan
Prior art keywords
pattern
phase inversion
groove
mask
quartz substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26412395A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08195378A (ja
Inventor
相満 ▲べー▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of JPH08195378A publication Critical patent/JPH08195378A/ja
Application granted granted Critical
Publication of JP2854545B2 publication Critical patent/JP2854545B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
JP26412395A 1994-10-12 1995-10-12 位相反転マスク及びその製造方法 Expired - Fee Related JP2854545B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR94-26083 1994-10-12
KR1019940026083A KR0137977B1 (ko) 1994-10-12 1994-10-12 위상반전마스크 및 그 제조방법

Publications (2)

Publication Number Publication Date
JPH08195378A JPH08195378A (ja) 1996-07-30
JP2854545B2 true JP2854545B2 (ja) 1999-02-03

Family

ID=19394939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26412395A Expired - Fee Related JP2854545B2 (ja) 1994-10-12 1995-10-12 位相反転マスク及びその製造方法

Country Status (5)

Country Link
US (1) US5705300A (zh)
JP (1) JP2854545B2 (zh)
KR (1) KR0137977B1 (zh)
CN (1) CN1041974C (zh)
GB (1) GB2294128B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100195333B1 (ko) * 1996-09-02 1999-06-15 구본준 위상반전마스크 및 그 제조방법
KR100215876B1 (ko) * 1996-12-26 1999-08-16 구본준 위상반전 마스크 및 그 제조방법
US6280646B1 (en) * 1999-07-16 2001-08-28 Micron Technology, Inc. Use of a chemically active reticle carrier for photomask etching

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950000091B1 (ko) * 1990-06-20 1995-01-09 후지쓰 가부시끼가이샤 위상 천이기가 있는 레티클과 그 제조방법 및 수정방법
CN2177291Y (zh) * 1993-11-22 1994-09-14 中国科学院微电子中心 一种x射线图形掩模
US5532089A (en) * 1993-12-23 1996-07-02 International Business Machines Corporation Simplified fabrication methods for rim phase-shift masks
KR970005675B1 (en) * 1994-01-19 1997-04-18 Hyundai Electronics Ind Fabrication method of phase shift mask
KR0151427B1 (ko) * 1994-03-04 1999-02-18 문정환 위상 반전마스크 및 그의 제조방법

Also Published As

Publication number Publication date
CN1041974C (zh) 1999-02-03
GB2294128A (en) 1996-04-17
KR0137977B1 (ko) 1998-06-15
US5705300A (en) 1998-01-06
JPH08195378A (ja) 1996-07-30
CN1128897A (zh) 1996-08-14
GB9520733D0 (en) 1995-12-13
GB2294128B (en) 1998-06-24
KR960015703A (ko) 1996-05-22

Similar Documents

Publication Publication Date Title
EP0234547B1 (en) Method of manufacturing photomask and photo-mask manufactured thereby
JPH07209851A (ja) リソグラフィ露光マスクおよびその製造方法
US5888678A (en) Mask and simplified method of forming a mask integrating attenuating phase shifting mask patterns and binary mask patterns on the same mask substrate
JP2003503756A (ja) 高密度形状をパターニングするための位相シフトフォトマスク
US5495959A (en) Method of making substractive rim phase shifting masks
TW388004B (en) Alternating phase shift mask
JP2854545B2 (ja) 位相反転マスク及びその製造方法
JP2723476B2 (ja) 位相反転マスクの製造方法
US5591549A (en) Self aligning fabrication method for sub-resolution phase shift mask
US5543254A (en) Phase shift mask and method for fabricating the same
KR100886419B1 (ko) 위상시프트 마스크의 제조 방법 및 위상시프트 마스크
US20010038952A1 (en) Method of fabricating phase shift mask
KR100207473B1 (ko) 위상반전마스크의 제작방법
JPH05249649A (ja) フォトマスクおよびその製造方法
US5814424A (en) Half tone phase shift masks with staircase regions and methods of fabricating the same
KR100228765B1 (ko) 셀 어퍼처 마스크 제조방법
KR100861292B1 (ko) 미세 패턴 형성 방법
JP2000113533A (ja) 記録媒体用基板およびその製造方法
KR20020017847A (ko) 위상반전마스크의 형성방법
JPH1152540A (ja) フォトマスクパターンの設計方法
US20090311865A1 (en) Method for double patterning lithography
JPH0659432A (ja) 露光用マスク及びこれを使用した露光方法
JPH07159969A (ja) 位相シフトマスクおよびその製造方法
KR20030049601A (ko) 위상반전 마스크 제작방법
KR20010056113A (ko) 위상반전 마스크의 제조방법

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071120

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081120

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091120

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091120

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101120

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101120

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111120

Year of fee payment: 13

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111120

Year of fee payment: 13

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121120

Year of fee payment: 14

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121120

Year of fee payment: 14

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131120

Year of fee payment: 15

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees