JP2851310B2 - Liquid crystal display - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to an active matrix type liquid crystal display device using a thin film transistor or the like. 2. Description of the Related Art An active matrix type liquid crystal display device has a non-linear element (switching element) provided for each of a plurality of pixel electrodes arranged in a matrix. Since the liquid crystal in each pixel is theoretically always driven (duty ratio 1.0), the active method has better contrast than the so-called simple matrix method that employs the time-division driving method. It is not a technology. A typical switching element is a thin film transistor (TFT). The liquid crystal display unit (liquid crystal display panel) of the liquid crystal display device includes an upper transparent glass substrate on which a color filter, a protective film for the color filter, a common transparent pixel electrode, and an alignment film are sequentially provided.
A lower transparent glass substrate on which a thin film transistor and a transparent pixel electrode, a protective film for the thin film transistor, and an alignment film are sequentially provided; a liquid crystal sealed between the alignment films on both substrates; a sealing member (seal member) for the liquid crystal; It is constituted by. Note that an active matrix liquid crystal display device using a TFT is, for example, "12.5 type active matrix color liquid crystal display employing a redundant configuration", Nikkei Electronics, pp. 193-210, December 15, 1986, Nikkei McGraw-Hill, Inc. Issued, known in. [Problems to be Solved by the Invention] FIG. 11 is a diagram for explaining a conventional technique, and is a cross-sectional view of an end of a liquid crystal display unit. SUB2 is an upper transparent glass substrate,
FIL is a color filter, PSV2 is a protective film of a color filter, ITO2 is a common transparent pixel electrode, SUB1 is a lower transparent glass substrate, DT is a lead terminal, and SIL is a silver paste material (conductive) for connecting ITO2 and the lead terminal DT. Paste material), LC is a liquid crystal, SL is a sealing material, and POL1 and POL2 are polarizing plates. Conventionally, since the lead terminal DT is composed of two layers of opaque Cr, the connection state between the silver paste material SIL and the lead terminal DT cannot be seen from the lower transparent glass substrate SUB1 side (that is, the direction of arrow A). There was a problem in that the silver paste SIL was displaced or forgotten to be attached, resulting in poor conduction. When the connection state between the silver paste material SIL and the common transparent pixel electrode ITO2 is viewed from the upper transparent glass substrate SUB2 side (that is, the direction of arrow B), the color filter FIL and the protective film PSV2 exist between the two. , These are less transparent but show through,
The connection status is visible. However, there is a case where a black matrix is provided instead of the color filter FIL for shielding light from the TFT made of Cr or the like.In this case, the connection state cannot be seen. , A conduction failure occurs. An object of the present invention is to provide a liquid crystal display device capable of observing a connection state and a position of a conductor connecting both conductive films provided on upper and lower transparent substrates. The above and other objects and novel features of the present invention are as follows.
It will become apparent from the description of the present specification and the accompanying drawings. [Means for Solving the Problems] In order to achieve the above object, the liquid crystal display device of the present invention comprises:
The main surfaces of the transparent and insulating first and second substrates face each other and are superimposed at a predetermined interval, and pixels including a thin film transistor and a pixel electrode are arranged in a matrix on the main surface of the first substrate; A light-shielding film covering the thin film transistor and a common electrode facing the pixel electrode are provided on a main surface of the second substrate, a lead terminal is provided on a main surface of the first substrate, and a conductive terminal is provided between the common electrode and the lead terminal. An opening of the light shielding film is provided in a portion of the second substrate where the conductor is provided. Further, the liquid crystal display device of the present invention has a transparent and insulating first material.
And the main surfaces of the second substrate facing each other are overlapped at a predetermined interval, and pixels composed of thin film transistors and pixel electrodes are arranged in a matrix on the main surface of the first substrate, and the main surface of the second substrate is provided. Providing a light-shielding film covering the periphery of the pixel electrode and a common electrode facing the pixel electrode, providing a lead terminal on the main surface of the first substrate, providing a conductor between the common electrode and the lead terminal, An opening of the light shielding film is provided in a portion of the second substrate where the conductor is provided. [Operation] In the present invention, a conductor for connecting the common electrode provided on the second substrate and the lead terminal provided on the first substrate is provided, and a portion of the second substrate provided with the conductor is provided with: Since the opening of the light-shielding film covering the periphery of the thin film transistor or the pixel electrode is provided, the connection state and position of the conductor can be seen from the outside of the second substrate. Further, a configuration example and operation of the present invention will be described with reference to the drawings. 1A is a cross-sectional view of a liquid crystal display unit showing a reference configuration example of the present invention, FIG. 1B is a partial plan view of FIG. 1A, and FIG. FIG. 3 is a plan view of a liquid crystal display unit showing a configuration example of the present invention. In the reference example shown in FIGS. 1A and 1B, since the conductor SIL and the lead terminal DT are connected by the transparent conductive film TE, the connection state of the conductor SIL from outside the lower transparent glass substrate SUB1. You can see the location. Further, in the configuration example of the present invention shown in FIG. 1C, a conductor SIL for connecting the common electrode ITO2 and the lead terminal DT is provided, and a portion of the upper transparent glass substrate SUB2 where the conductor SIL is provided is shielded from light. Since the opening OP of the film BM is provided, the connection state and position of the conductor SIL can be seen from outside the upper transparent glass substrate SUB2. Embodiment The configuration of the present invention will be described below together with an embodiment in which the present invention is applied to an active matrix type color liquid crystal display device. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and their repeated description will be omitted. FIG. 2A is a plan view showing one pixel of an active matrix type color liquid crystal display device to which the present invention is applied and the periphery thereof, and FIG. 2B is a cross-sectional view taken along a line IIB-IIB in FIG. 2A. FIG. 2D is a cross-sectional view of the vicinity of the seal portion of the panel, and FIG. 2D is a cross-sectional view taken along line IIC-IIC in FIG. 2A. FIG. 3 (main part plan view) shows a plan view when a plurality of pixels shown in FIG. 2A are arranged. << Pixel Arrangement >> As shown in FIG. 2A, each pixel has two adjacent scanning signal lines (gate signal lines or horizontal signal lines) GL and two adjacent video signal lines (drain signal lines or vertical signal lines). Signal line) DL
(In a region surrounded by four signal lines). Each pixel includes a thin film transistor TFT, a pixel electrode ITO1, and an additional capacitance Cadd. The scanning signal lines GL extend in the column direction, and a plurality of the scanning signal lines GL are arranged in the row direction. The video signal lines DL extend in the row direction and are arranged in a plurality in the column direction. << Overall Structure of Panel Section >> As shown in FIG. 2B, a thin film transistor TFT and a transparent pixel electrode ITO1 are formed on the lower transparent glass substrate SUB1 side with respect to the liquid crystal layer LC, and a color filter is formed on the upper transparent glass substrate SUB2 side. FIL, black matrix pattern B for shading
M is formed. The lower transparent glass substrate SUB1 has a thickness of, for example, about 1.1 [mm]. The center part of FIG. 2B shows a cross section of one pixel part,
The left side shows the cross section of the left edge portion of the transparent glass substrates SUB1 and SUB2 where the external lead wiring exists. On the right is
The cross section of the right edge portion of the transparent glass substrates SUB1 and SUB2 where there is no external lead-out wiring is shown. The sealing material SL shown on the left and right sides of FIG.
It is configured to seal the LC, and is formed along the entire periphery of the transparent glass substrates SUB1 and SUB2 except for the liquid crystal sealing port (not shown). The sealing material SL is formed of, for example, an epoxy resin. The common transparent pixel electrode IT on the upper transparent glass substrate SUB2 side
O2 is connected to the external lead-out wiring formed on the lower transparent glass substrate SUB1 side by the silver paste material SIL at at least one place. This external lead-out wiring is formed in the same manufacturing process as the above-described gate electrode GT, source electrode SD1, and drain electrode SD2. Each layer of the alignment films ORI1 and ORI2, the transparent pixel electrode ITO1, the common transparent pixel electrode ITO2, the protective films PSV1 and PSV2, and the insulating film GI is formed inside the sealing material SL. The polarizing plate POL is formed on the outer surface of each of the lower transparent glass substrate SUB1 and the upper transparent glass substrate SUB2. The liquid crystal LC is a lower alignment film ORI1 that sets the orientation of the liquid crystal molecules.
And the upper alignment film ORI2, and is sealed by a seal portion SL. The lower alignment film ORI1 is formed above the protective film PSV1 on the lower transparent glass substrate SUB1 side. On the inner (liquid crystal side) surface of the upper transparent glass substrate SUB2, a light-shielding film BM, a color filter FIL, a protective film PSV2, a common transparent pixel electrode (COM) ITO2, and an upper alignment film ORI2 are sequentially laminated. . In this liquid crystal display device, the respective layers on the lower transparent glass substrate SUB1 side and the upper transparent glass substrate SUB2 side are separately formed, and then the upper and lower transparent glass substrates SUB1 and SUB2 are overlapped, and the liquid crystal LC is sealed between the two. Assembled by Leader terminal DT provided on lower transparent glass substrate SUB1
The connection portion with the silver paste SIL is removed, and a transparent conductive film TE is provided in that portion. The silver paste SIL and the lead terminal DT are connected through the transparent conductive film TE. Therefore, the silver paste SIL from outside the lower transparent glass substrate SUB1
Can be visually observed. Lead terminal
The DT is composed of two layers of Cr films g1 and d1, but the two layers of Cr films g1 and d1 are stepped as shown in the figure so that the transparent conductive film TE is not cut off. Further, since the opening OP is provided in the light shielding film BM existing between the silver paste SIL and the upper transparent glass substrate SUB2,
The connection state and position of the silver paste SIL can be visually observed from outside the upper transparent glass substrate SUB2. The pattern of the opening OP is formed at the same time as patterning after the entire surface of the light shielding film BM is sputtered. FIG. 2C is a plan view showing an opening OP provided in the light shielding film BM. Thus, when applying silver paste SIL, silver paste SIL
Since the connection state and position of the silver paste SIL can be confirmed, it is possible to prevent displacement and forgetting to attach the silver paste SIL, control the diameter of the silver paste SIL applied, improve the yield, and shorten the application process time. In addition, the application state of the silver paste SIL can be confirmed by the state of the product. << Thin Film Transistor TFT >> The thin film transistor TFT operates such that when a positive bias is applied to the gate electrode GT, the channel resistance between the source and the drain decreases, and when the bias is set to zero, the channel resistance increases. The thin film transistor TFT of each pixel has 3
And a plurality of thin film transistors (divided thin film transistors) TFT1, TFT2 and TFT3. Each of the thin film transistors TFT1 to TFT3 has substantially the same size (the same channel length and width). Each of the divided thin film transistors TFT1 to TFT3 mainly includes a gate electrode GT, a gate insulating film GI, an i-type (intrinsic, intr
Insic, which is not doped with the conductivity type determining impurity), is composed of an amorphous Si semiconductor layer AS, a pair of source electrode SD1 and drain electrode SD2. It should be understood that the source and the drain are originally determined by the bias polarity between them, and the polarity of the circuit of the present display device is inverted during the operation, so that the source and the drain are switched during the operation. However, also in the following description, for convenience, one is fixed as a source and the other is fixed as a drain. {Gate Electrode GT} As shown in detail in FIG. 4 (a plan view depicting only the layers g1, g2, and AS in FIG. 2A), the scanning signal line GL
From the vertical direction (upward in FIGS. 2A and 4) (branched into a T-shape). The gate electrode GT is configured to protrude to each of the formation regions of the thin film transistors TFT1 to TFT3. The respective gate electrodes GT of the thin film transistors TFT1 to TFT3 are integrally formed (as a common gate electrode) and formed continuously with the scanning signal line GL. The gate electrode GT is formed of a single-layer first conductive film g1 so that a large step is not formed in a region where the thin film transistor TFT is formed. The first conductive film g1 is formed, for example, using a chromium (Cr) film formed by sputtering and having a thickness of about 1000 [Å]. As shown in FIGS. 2A, 2B and 4, the gate electrode GT is formed to be larger than that (as viewed from below) so as to completely cover the semiconductor layer AS. Therefore, the substrate
When a backlight BL such as a fluorescent lamp is mounted below SUB1, the opaque Cr gate electrode GT is shaded, and the semiconductor layer AS is not irradiated with the backlight, and the conductive phenomenon due to light irradiation, that is, the TFT is turned off. Characteristic degradation is less likely to occur. Note that the original size of the gate electrode GT is the minimum necessary to extend between the source / drain electrodes SD1 and SD2 (including the alignment margin between the gate electrode and the source / drain electrodes).
It has a width, and its depth length that determines the channel width W is the ratio to the distance (channel length) L between the source and drain electrodes, that is, a factor W / L that determines the transconductance gm.
Is determined by how many. The size of the gate electrode in this embodiment is, of course, larger than the original size described above. Considering only the gate electrode GT and the light shielding function, the gate electrode and its wiring GL may be integrally formed in a single layer, in this case, Al containing Si as an opaque conductive material, pure Al or Pd-containing Al can be selected. << Scanning Signal Line GL >> The scanning signal line GL is formed of a composite film including a first conductive film g1 and a second conductive film g2 provided thereon. The first conductive film g1 of the scanning signal line GL is formed in the same manufacturing process as the first conductive film g1 of the gate electrode GT, and is integrally formed. The second conductive film g2 is, for example, an aluminum (Al) film formed by sputtering,
The film thickness is formed at about 00 [Å]. The second conductive film g2 is configured so as to reduce the resistance value of the scanning signal line GL and increase the signal transmission speed (improve the writing characteristics of pixel information). Further, the scanning signal line GL is configured such that the width of the second conductive film g2 is smaller than the width of the first conductive film g1. That is, the scanning signal line GL has a gentle step shape on the side wall. << Gate Insulating Film GI >> The insulating film GI is used as each gate insulating film of the thin film transistors TFT1 to TFT3. The insulating film GI is the gate electrode
It is formed above the GT and the scanning signal line GL. Insulating film GI
Is formed, for example, using a silicon nitride film formed by plasma CVD and having a thickness of about 3000 [Å]. << Semiconductor Layer AS >> As shown in FIG. 4, the i-type semiconductor layer AS is used as a channel formation region of each of a plurality of divided thin film transistors TFT1 to TFT3. The i-type semiconductor layer AS is formed of an amorphous silicon film or a polycrystalline silicon film,
It is formed with a film thickness of about [Å]. This i-type semiconductor layer AS is made of Si ₃ N
_{Fourth, following} the formation of the gate insulating film GI, the gate insulating film GI is formed in the same plasma CVD apparatus without being exposed to the outside from the apparatus. Similarly, an N ⁺ layer do doped with P for ohmic contact (FIG. 2B) is formed continuously to a thickness of about 400 [400]. Thereafter, the lower substrate SUB1 is taken out of the CVD apparatus, and the N ⁺ layer d0 and the i layer
AS is patterned into independent islands as shown in FIGS. 2A, 2B and 4. The i-type semiconductor layer SA is also provided between both intersections (crossover portions) of the scanning signal lines GL and the video signal lines DL, as shown in detail in FIGS. 2A and 4. This intersection i
The type semiconductor layer AS is configured to reduce a short circuit between the scanning signal line GL and the video signal line DL at the intersection. << Source / Drain Electrodes SD1, SD2 >> Each of the source electrode SD1 and the drain electrode SD2 of the plurality of divided thin film transistors TFT1 to TFT3 are shown in FIGS. 2A and 2B.
FIG. 5 and FIG. 5 (a plan view showing only layers d1 to d3 in FIG. 2A)
As will be described in detail later, they are provided separately on the semiconductor layer AS. Each of the source electrode SD1 and the drain electrode SD2 is configured by sequentially stacking a first conductive film d1, a second conductive film d2, and a third conductive film d3 from the lower layer side in contact with the N ⁺ type semiconductor layer d0. . The first conductive film d1, the second conductive film d2, and the third conductive film d3 of the source electrode SD1 are formed in the same manufacturing process as each of the drain electrode SD2. The first conductive film d1 uses a chromium film formed by sputtering and has a thickness of 500 to 1000 [Å] (in this embodiment, 600 [Å]).
(About the same thickness). The chromium film is formed in a range that does not exceed about 2000 [Å] because the stress increases when the chromium film is formed thick. The chromium film has good contact with the N ⁺ type semiconductor layer d0. The chromium film is formed by a second
It forms a so-called barrier layer that prevents aluminum of the conductive film d2 from diffusing into the N ⁺ type semiconductor layer d0. First conductive film d1
In addition to chromium film, refractory metals (Mo, Ti, Ta, W)
Film, refractory metal silicide (MoSi ₂ , TiSi ₂ , TaSi ₂ , WSi ₂ )
It may be formed of a film. After patterning the first conductive film d1 by photo processing, the same photo processing mask or N ⁺
Layer d0 is removed. That is, the N ⁺ layer remaining on the i-layer AS
As for d0, portions other than the first conductive film d1 are removed by self-alignment. At this time, since the N ⁺ layer d0 is etched so as to completely remove its thickness, the i layer AS is also slightly etched at its surface, but the degree may be controlled by the etching time. Thereafter, the second conductive film d2 is formed to a thickness of 3000 to 4000 [Å] by sputtering of aluminum (in this embodiment, 3000 to 4000 [Å]).
[Å]. The aluminum film is
The stress is smaller than that of the chromium film, it can be formed in a thick film, and the resistance value of the source electrode SD1, the drain electrode SD2 and the video signal line DL is reduced. The second conductive film d2 may be formed of an aluminum film containing silicon (Si) or copper (Cu) as an additive, in addition to the aluminum film. After patterning the second conductive film d2 by a photoprocessing technique, a third conductive film d3 is formed. This third conductive film d3 is a transparent conductive film (Induim-Tin-Oxide I) formed by sputtering.
TO: Nesa film) and is formed to a thickness of 1000 to 2000 [Å] (in this embodiment, a thickness of about 1200 [Å]). The third conductive film d3 forms the source electrode SD1, the drain electrode SD2, and the video signal line DL, and also forms the transparent pixel electrode ITO1. Each of the first conductive film d1 of the source electrode SD1 and the first conductive film d1 of the drain electrode SD2 is deeper inside (in the channel region) than the upper second conductive film d2 and the third conductive film d3. . That is, the first conductive film d1 in these portions
Are configured such that the gate length L of the thin film transistor TFT can be defined independently of the layers d2 and d3. The source electrode SD1 is, as described above, a transparent pixel electrode ITO1.
It is connected to the. The source electrode SD1 is an i-type semiconductor layer AS
(The film thickness of the first conductive film g1, the film thickness of the N ⁺ layer d0, and i
Step equivalent to the film thickness obtained by adding the film thickness of the semiconductor layer AS)
It is configured along. Specifically, the source electrode SD1
Represents a first portion formed along the step shape of the i-type semiconductor layer AS.
A conductive film d1, a second conductive film d2 formed on the upper side of the first conductive film d1 and connected to the transparent pixel electrode ITO1 with a smaller size, and a first conductive film exposed from the second conductive film. And a third conductive film d3 connected to the film d1.
Since the second conductive film d2 of the source electrode SD1 cannot form a thick chrome film of the first conductive film d1 due to an increase in stress and cannot overcome the step of the i-type semiconductor layer AS, the second conductive film d2 is It is configured to get over. That is, the step coverage is improved by forming the second conductive film d2 to be thick. Since the second conductive film d2 can be formed thick, it greatly contributes to a reduction in the resistance value of the source electrode SD1 (the same applies to the drain electrode SD2 and the video signal line DL).
Since the third conductive film d3 cannot overcome the stepped shape caused by the i-type semiconductor layer AS of the second conductive film d2, the first conductive film exposed by reducing the size of the second conductive film d2
It is configured to connect to d1. The first conductive film d1 and the third conductive film d3 not only have good adhesiveness, but also have a small step at the connection between them, so that they can be reliably connected. << Pixel Electrode ITO1 >> The transparent pixel electrode ITO1 is provided for each pixel, and constitutes one of the pixel electrodes of the liquid crystal display unit. Transparent pixel electrode ITO1 is a thin-film transistor divided into multiple pixels
It is divided into three transparent pixel electrodes (divided transparent pixel electrodes) E1, E2, and E3 corresponding to each of TFT1 to TFT3. Each of the transparent pixel electrodes E1 to E3 is connected to a source electrode SD1 of the thin film transistor TFT. Each of the transparent pixel electrodes E1 to E3 is patterned so as to have substantially the same area. As described above, by dividing the thin film transistor TFT of one pixel into a plurality of thin film transistors TFT1 to TFT3, and connecting each of the plurality of divided transparent pixel electrodes E1 to E3 to each of the plurality of divided thin film transistors TFT1 to TFT3, ,
Even if the divided part (for example, TFT1) becomes a point defect, the point defect disappears in the whole pixel (TFT2 and TFT3).
Is not a defect), the probability of a point defect can be reduced, and the defect can be made difficult to see. Further, by configuring each of the divided transparent pixel electrodes E1 to E3 of the pixel with substantially the same area, each of the liquid crystal composed of each of the transparent pixel electrodes E1 to E3 and the common transparent pixel electrode ITO2 is formed. The capacity (Cpix) can be made uniform. ≪Protective film PSV1≫ On the thin film transistor TFT and the transparent pixel electrode ITO1,
A protective film PSV1 is provided. The protective film PSV1 is mainly formed to protect the thin film transistor TFT from moisture and the like, and uses a film having high transparency and good moisture resistance. The protective film PSV1 is formed of, for example, a silicon oxide film or a silicon nitride film formed by plasma CVD, and has a thickness of 8000 [Å].
It is formed with a film thickness of about. << Shading film BM >> On the upper substrate SUB2 side, an i-type semiconductor layer in which external light (light from above in FIG. 2B) is used as a channel formation region
A shielding film BM is provided so as not to enter the AS, and has a pattern as shown by hatching in FIG. FIG. 6 shows the ITO film layer d3 and the filter layer FIL in FIG. 2A.
FIG. 3 is a plan view illustrating only a light shielding film BM. The light shielding film BM
It is formed of, for example, an aluminum film, a chromium film, or the like having a high light shielding property. In this embodiment, the chromium film is formed to a thickness of about 1300 [Å] by sputtering. Therefore, the common semiconductor layers AS of the TFTs 1 to 3 are sandwiched by the upper and lower light shielding films BM and the large gate electrodes GT, and the portions are not exposed to external natural light or backlight. The light-shielding film BM is formed around the pixel as shown by the hatched portion in FIG. 6, that is, the light-shielding film BM is formed in a lattice shape (black matrix), and the effective display area of one pixel is partitioned by the lattice. I have. Therefore, the contour of each pixel is clear by the light shielding film BM, and the contrast is improved. That is, the light shielding film BM has two functions, that is, light shielding for the semiconductor layer AS and black matrix. It should be noted that the backlight can be attached to the SUB2 side and the SUB1 can be the observation side (externally exposed side). ≪Common electrode ITO2≫ The common transparent pixel electrode ITO2 is opposed to the transparent pixel electrode ITO1 provided for each pixel on the lower transparent glass substrate SUB1 side, and the optical state of the liquid crystal is between each pixel electrode ITO1 and the common electrode ITO2. It changes in response to a potential difference (electric field). The common transparent pixel electrode ITO2 is configured to apply a common voltage Vcom. The common voltage Vcom is a low-level drive voltage Vdmin and a high-level drive voltage Vd applied to the video signal line DL.
This is an intermediate potential with dmax. << Color Filter FIL >> The color filter FIL is formed by coloring a dye on a dye base material formed of a resin material such as an acrylic resin.
The color filter FIL is formed in a dot shape for each pixel at a position facing the pixel (FIG. 7) and is dyed separately (FIG. 7 shows the third conductive film layer d3 and the color filter layer of FIG. 3).
Only the FIL is drawn, and each of the R, G, and B filters has a 45 の, 135 ゜, cross hatch.) As shown in FIG. 6, the color filter FIL has a pixel electrode ITO1 (E
1 to E3) is formed to be large enough to cover all of
M is formed inside the periphery of the pixel electrode ITO1 so as to overlap the color filter FIL and the edge of the pixel electrode ITO1. The color filter FIL can be formed as follows. First, a dyed base material is formed on the surface of the upper transparent glass substrate SUB2, and the dyed base material other than the red filter forming region is removed by photolithography. Thereafter, the dyed substrate is dyed with a red dye and subjected to a fixing treatment to form a red filter R. Next, by performing similar steps, a green filter G and a blue filter B are sequentially formed. The protective film PSV2 is provided in order to prevent the dye obtained by dyeing the color filter FIL into different colors from leaking into the liquid crystal LC. The protective film PSV2 is formed of, for example, a transparent resin material such as an acrylic resin or an epoxy resin. {Pixel Arrangement} As shown in FIGS. 3 and 7, a plurality of pixels of the liquid crystal display unit are arranged in the same direction as the direction in which the scanning signal line GL extends, and the pixel columns X1, X2, X3, Each of X4, ... is composed. Each pixel in each of the pixel rows X1, X2, X3, X4,... Has the same arrangement position of the thin film transistors TFT1 to TFT3 and the transparent pixel electrodes E1 to E3. That is, each pixel of the odd-numbered pixel rows X1, X3,... Has the thin film transistors TFT1 to TFT3 arranged on the left and the transparent pixel electrodes E1 to E3 arranged on the right. Each of the even-numbered pixel columns X2, X4,... Adjacent in the row direction of the odd-numbered pixel columns X1, X3,.
Are turned upside down in line symmetry with respect to the extending direction of the video signal line DL. That is, each pixel of the pixel rows X2, X4,... Has the thin film transistors TFT1 to TFT3 arranged on the right and the transparent pixel electrodes E1 to E3 arranged on the left. Then, pixel rows X2, X4,
Are arranged (moved) by a half pixel interval in the column direction with respect to the pixels of the pixel columns X1, X3,. That is, assuming that the pixel interval of the pixel row X is 1.0 (1.0 pitch), the pixel row X of the next stage has the pixel interval of 1.0.
It is shifted by 0.5 pixel interval (0.5 pitch) in the column direction with respect to the preceding pixel column X. The video signal lines DL extending in the row direction between the pixels are configured to extend in the column direction by half pixel intervals (0.5 pitch) between the pixel columns X. As a result, as shown in FIG. 7, a pixel of a predetermined color filter of the preceding pixel row X are formed (e.g., pixels red filter R of the pixel column X ₃ is formed) and the next pixel column X A pixel on which the same color filter is formed (for example, a pixel on which the red filter R of the pixel column X4 is formed) is spaced by 1.5 pixels (1.5 pixels).
Pitch), and the RGB color filters FIL are arranged in a triangle. The RGB triangular arrangement structure of the color filter FIL can improve the color mixture of each color, so that the resolution of a color image can be improved. In addition, since the video signal lines DL extend in the column direction only by half pixel intervals between the pixel columns X, they do not cross adjacent video signal lines DL. Therefore, it is possible to eliminate the routing of the video signal line DL and reduce the occupied area thereof,
In addition, the bypass of the video signal line DL can be eliminated, and the multilayer wiring structure can be eliminated. << Equivalent Circuit of Entire Display Panel >> FIG. 8 shows an equivalent circuit of the liquid crystal display unit. XiG,
Xi + 1G,... Are video signal lines DL connected to the pixels on which the green filter G is formed. XiB, Xi + 1B,... Are video signal lines DL connected to the pixels on which the blue filters B are formed. Xi + 1R, Xi + 2R,... Are video signal lines DL connected to pixels on which the red filter R is formed. These video signal lines DL are selected by a video signal drive circuit. Yi is third
7 is a scanning signal line GL for selecting the pixel column X1 shown in FIG. 7 and FIG. Similarly, Yi + 1, Yi + 2,... Represent pixel rows X2, X3,
Are the scanning signal lines GL for selecting each of. These scanning signal lines GL are connected to a vertical scanning circuit. << Structure of Additional Capacitor Cadd >> Each of the transparent pixel electrodes E1 to E3 is a thin film transistor TFT
At the end opposite to the end connected to the scanning signal line GL, it is bent in an L-shape so as to overlap the adjacent scanning signal line GL. As is clear from FIG. 2C, this superposition is performed by using a storage capacitor (capacitance) in which each of the transparent pixel electrodes E1 to E3 is set as one electrode PL2 and the adjacent scanning signal line GL is set as the other electrode PL1. (Element) constitutes Cadd. The dielectric film of the storage capacitor Cadd is formed of the same layer as the insulating film GI used as the gate insulating film of the thin film transistor TFT. As is apparent from FIG. 4, the storage capacitor Cadd is formed at a portion where the width of the first layer g1 of the gate line GL is increased.
Note that the portion of the layer g1 that intersects with the drain line DL is thinned in order to reduce the probability of a short circuit with the drain line. Like the source electrode SD1, a portion between each of the transparent pixel electrodes E1 to E3 and the capacitor electrode line (g1) which are superimposed to form the storage capacitor Cadd, when climbing over a stepped shape, To prevent the transparent pixel electrode ITO1 from breaking,
An island region constituted by the conductive film d1 and the second conductive film d2 is provided. This island region is configured to be as small as possible so as not to reduce the area (opening ratio) of the transparent pixel electrode ITO1. << Equivalent Circuit of Additional Capacitor Cadd and Its Operation >> FIG. 9 shows an equivalent circuit of the pixel shown in FIG. 2A. In FIG. 9, Cgs is a gate electrode of the thin film transistor TFT.
This is a parasitic capacitance formed between GT and the source electrode SD1.
The dielectric film of the parasitic capacitance Cgs is the insulating film GI. Cpix is transparent pixel electrode ITO1 (PIX) and common transparent pixel electrode ITO2 (COM)
This is the liquid crystal capacitance formed between the two. The dielectric films of the liquid crystal capacitor Cpix are the liquid crystal LC, the protective film PSV1, and the alignment films ORI1, ORI2. V
lc is the midpoint potential. The holding capacitance element Cadd functions to reduce the influence of the gate potential change ΔVg on the midpoint potential (pixel electrode potential) Vlc when the TFT switches. This state is represented by the following equation: ΔVlc = {(Cgs / (Cgs + Cadd + Cpix)} × ΔVg, where ΔVlc represents a change in the midpoint potential due to ΔVg, and this change ΔVlc is a cause of the DC component applied to the liquid crystal. However, as the storage capacitance Cadd is increased, the value can be reduced, and the storage capacitance Cadd also has an effect of increasing the discharge time, and accumulates long image information after the TFT is turned off. The reduction of the DC component applied to the LC can improve the life of the liquid crystal LC and reduce so-called burn-in in which the previous image remains when switching the liquid crystal display screen. The source / drain electrodes SD are enlarged to cover AS completely.
1.The area of overlap with SD2 increases, so the parasitic capacitance Cg
As s increases, the midpoint potential Vlc has an adverse effect of being easily affected by the gate (scan) signal Vg. However, this disadvantage can be eliminated by providing the storage capacitor Cadd. The storage capacitance of the storage capacitance element Cadd is 4 to 8 times the liquid crystal capacitance Cpix (4 · Cpix <Cadd) due to the writing characteristics of the pixel.
<8 · Cpix), 8 to 32 times (8
・ Set to a value of about Cgs <Cadd <32 · Cgs). ≫Connection method of additional capacitance Cadd electrode line≫ Scan signal line of the last stage used only as capacitance electrode line
The GL (or the first-stage scanning signal line GL) is connected to the common transparent pixel electrode (Vcom) ITO2 as shown in FIG. As shown in FIG. 2B, the common transparent pixel electrode ITO2 is connected to an external lead-out line by a silver paste material SIL at the periphery of the liquid crystal display device. In addition, some of the conductive layers (g1 and g2) of the external lead wiring are formed in the same manufacturing process as the scanning signal line GL. As a result, the last stage capacitance electrode line GL is
It can be easily connected to the common transparent pixel electrode ITO2. Alternatively, as shown by the dotted line in FIG. 8, the last (first) capacitor electrode line GL may be connected to the first (last) scanning signal line GL. This connection can be made by an internal wiring in the liquid crystal display unit or an external lead-out wiring. << DC Cancellation by Additional Capacitance Cadd Scanning Signal >> This liquid crystal display device is based on a DC cancellation method (DC cancellation method) described in Japanese Patent Application No. 62-95125 filed by the present applicant. As shown in the diagram (time chart), by controlling the drive voltage of the scanning signal line DL, the DC component applied to the liquid crystal LC can be further reduced. In FIG. 10, Vi is a drive voltage of an arbitrary scanning signal line GL, and Vi + 1 is a driving voltage of a scanning signal line GL at the next stage. Vee is a low-level driving voltage Vdmin applied to the scanning signal line GL, and Vdd is a high-level driving voltage Vdmax applied to the scanning signal line GL. Voltage changes ΔV _{1 to} ΔV ₄ of the midpoint potential Vlc (see FIG. 9) at each time t = t _{1 to} t ₄ are as follows. t = t ₁ : ΔV ₁ = − (Cgs / C) · V2 t = t ₂ : ΔV ₂ = + (Cgs / C) · (V1 + V2) − (Cadd / C) · V2 t = t ₃ : ΔV ₃ = − (Cgs / C) · V1 + (Cadd / C) · (V1 + V2) t = t ₄ : ΔV ₄ = − (Cadd / C) · V1, where the total capacitance of the pixels: C = Cgs + Cpix + Cadd Here, the scanning signal If the drive voltage applied to the line GL is sufficient (see

Note: The DC voltage applied to the liquid crystal LC is ΔV ₃ + ΔV ₄ = (Cadd · V2−Cgs · V1) / C. Therefore, if Cadd · V2 = Cgs · V1, the DC voltage applied to the liquid crystal LC is Becomes 0.

〔The invention's effect〕

As described above, in the liquid crystal display device of the present invention, the connection state, position, and the like of a conductor such as a conductive paste for extracting a pixel electrode provided on the upper transparent substrate to the lower transparent substrate can be visually confirmed. , Reliability can be improved.

[Brief description of the drawings]

1A is a cross-sectional view of a liquid crystal display unit showing a reference configuration example of the present invention, FIG. 1B is a partial plan view of FIG. 1A, and FIG. FIG. 2A is a plan view of a liquid crystal display unit showing a configuration example of the present invention, FIG. 2A is a plan view of a main part showing one pixel of a liquid crystal display unit of an active matrix type color liquid crystal display device which is Embodiment I of the present invention, FIG. 2B is a sectional view taken along the line II B-II B in FIG. 2A.
FIG. 2C is a cross-sectional view of the portion cut along the cutting line and the periphery of the seal portion, FIG. 2C is a plan view showing an opening provided in the light shielding film, and FIG.
FIG. 3 is a cross-sectional view taken along the line IIC-IIC in FIG. 3, FIG. 3 is a plan view of a main part of a liquid crystal display unit in which a plurality of pixels shown in FIG. 2A are arranged, and FIGS. FIG. 7 is a plan view depicting only predetermined layers of the pixel shown in FIG. 7, FIG. 7 is a plan view of a main part in a state where only the pixel electrode layer and the color filter layer shown in FIG. FIG. 9 is an equivalent circuit diagram of a pixel described in FIG. 2A, FIG. 9 is an equivalent circuit diagram of a pixel of the active matrix type color liquid crystal display device, and FIG. FIG. 11 is a sectional view of an end of a conventional liquid crystal display unit. In the figure, SIL: silver paste, transparent conductive film: TE, DT
Lead terminal, BM: Shielding film, OP: Opening, SUB: Transparent glass substrate, GL: Scanning signal line, DL: Video signal line, GI
... insulating film, GT ... gate electrode, AS ... i-type semiconductor layer,
SD: Source electrode or drain electrode, PSV: Protective film, L
S: light shielding film, LC: liquid crystal, TFT: thin film transistor,
ITO: transparent electrode, g, d: conductive film, Cadd: storage capacitance element, Cgs: superimposed capacitance, Cpix: liquid crystal capacitance (subscripts of numbers after English letters are omitted).

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Shigeru Matsuyama 3300 Hayano Mobara-shi, Chiba Pref. Mochi Plant, Hitachi Co., Ltd. (56) References Japanese Utility Model 1986-206922 (JP, U) 90031 (JP, U) (58) Field surveyed (Int. Cl. ⁶ , DB name) G02F 1/1345 G02F 1/1335 G02F 1/136 G09F 9/30

Claims (2)

(57) [Claims] 1. A method according to claim 1, wherein the main surfaces of the transparent and insulating first and second substrates are opposed to each other and overlapped at a predetermined interval.
Pixels each including a thin film transistor and a pixel electrode are arranged in a matrix on the main surface of the first substrate, and a light-shielding film covering the thin film transistor and a common electrode facing the pixel electrode are provided on the main surface of the second substrate. A lead terminal is provided on the main surface of the first substrate, a conductor is provided between the common electrode and the lead terminal, and an opening of the light-shielding film is provided on a portion of the second substrate where the conductor is provided. A liquid crystal display device. 2. The method according to claim 1, wherein the main surfaces of the transparent and insulating first and second substrates are opposed to each other and overlapped at a predetermined interval.
Pixels each composed of a thin film transistor and a pixel electrode are arranged in a matrix on the main surface of the first substrate, and a light-shielding film covering the periphery of the pixel electrode and a common electrode facing the pixel electrode are formed on the main surface of the second substrate. A lead terminal is provided on a main surface of the first substrate; a conductor is provided between the common electrode and the lead terminal; and an opening of the light-shielding film is provided in a portion of the second substrate where the conductor is provided. A liquid crystal display device, which is provided.