JP2843006B2 - エミュレーション手段を有するプログラマブル集積回路メモリ - Google Patents
エミュレーション手段を有するプログラマブル集積回路メモリInfo
- Publication number
- JP2843006B2 JP2843006B2 JP20651695A JP20651695A JP2843006B2 JP 2843006 B2 JP2843006 B2 JP 2843006B2 JP 20651695 A JP20651695 A JP 20651695A JP 20651695 A JP20651695 A JP 20651695A JP 2843006 B2 JP2843006 B2 JP 2843006B2
- Authority
- JP
- Japan
- Prior art keywords
- memory
- bus
- signal
- internal
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
- G11C29/16—Implementation of control logic, e.g. test mode decoders using microprogrammed units, e.g. state machines
Landscapes
- Read Only Memory (AREA)
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Test And Diagnosis Of Digital Computers (AREA)
- Storage Device Security (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9409202A FR2722907B1 (fr) | 1994-07-20 | 1994-07-20 | Memoire integree programmable comportant des moyens d'emulation |
FR9409202 | 1994-07-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0864000A JPH0864000A (ja) | 1996-03-08 |
JP2843006B2 true JP2843006B2 (ja) | 1999-01-06 |
Family
ID=9465729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20651695A Expired - Fee Related JP2843006B2 (ja) | 1994-07-20 | 1995-07-20 | エミュレーション手段を有するプログラマブル集積回路メモリ |
Country Status (5)
Country | Link |
---|---|
US (1) | US5651128A (fr) |
EP (1) | EP0696031B1 (fr) |
JP (1) | JP2843006B2 (fr) |
DE (1) | DE69500112T2 (fr) |
FR (1) | FR2722907B1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9417297D0 (en) * | 1994-08-26 | 1994-10-19 | Inmos Ltd | Method and apparatus for testing an integrated circuit device |
US5893135A (en) * | 1995-12-27 | 1999-04-06 | Intel Corporation | Flash memory array with two interfaces for responding to RAS and CAS signals |
US5787484A (en) * | 1996-08-08 | 1998-07-28 | Micron Technology, Inc. | System and method which compares data preread from memory cells to data to be written to the cells |
US5754567A (en) | 1996-10-15 | 1998-05-19 | Micron Quantum Devices, Inc. | Write reduction in flash memory systems through ECC usage |
EP0935195A2 (fr) | 1998-02-06 | 1999-08-11 | Analog Devices, Inc. | Circuit intégré avec convertisseur analogique-numérique à haute résolution, un microcontrolleur et une mémoire à haute densité et émulateur correspondant |
US6289300B1 (en) | 1998-02-06 | 2001-09-11 | Analog Devices, Inc. | Integrated circuit with embedded emulator and emulation system for use with such an integrated circuit |
US6701395B1 (en) | 1998-02-06 | 2004-03-02 | Analog Devices, Inc. | Analog-to-digital converter that preseeds memory with channel identifier data and makes conversions at fixed rate with direct memory access |
US6385689B1 (en) * | 1998-02-06 | 2002-05-07 | Analog Devices, Inc. | Memory and a data processor including a memory |
JP3472123B2 (ja) * | 1998-02-24 | 2003-12-02 | 沖電気工業株式会社 | シーケンスコントローラ |
DE69832609D1 (de) | 1998-09-30 | 2006-01-05 | St Microelectronics Srl | Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren |
JP4124692B2 (ja) | 2003-04-25 | 2008-07-23 | シャープ株式会社 | 不揮発性半導体記憶装置 |
EP1473739A1 (fr) | 2003-04-29 | 2004-11-03 | Dialog Semiconductor GmbH | Mémoire flash avec pré-détection de la perte de données |
PL363945A1 (en) | 2003-12-08 | 2005-06-13 | Advanced Digital Broadcast Polska Spółka z o.o. | Software method for eeprom memory emulation |
CN102750980B (zh) * | 2012-07-20 | 2015-02-11 | 中国科学院上海微系统与信息技术研究所 | 一种具有配置电路的相变存储器芯片 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2684365B2 (ja) * | 1987-04-24 | 1997-12-03 | 株式会社日立製作所 | 半導体記憶装置 |
US5222046A (en) * | 1988-02-17 | 1993-06-22 | Intel Corporation | Processor controlled command port architecture for flash memory |
CA1286803C (fr) * | 1989-02-28 | 1991-07-23 | Benoit Nadeau-Dostie | Methode de verification serie pour memoires intercalaires |
US5224070A (en) * | 1991-12-11 | 1993-06-29 | Intel Corporation | Apparatus for determining the conditions of programming circuitry used with flash EEPROM memory |
JPH05290185A (ja) * | 1992-04-13 | 1993-11-05 | Yokogawa Electric Corp | 特定用途向け集積回路 |
JPH0612900A (ja) * | 1992-06-29 | 1994-01-21 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US5410544A (en) * | 1993-06-30 | 1995-04-25 | Intel Corporation | External tester control for flash memory |
US5509134A (en) * | 1993-06-30 | 1996-04-16 | Intel Corporation | Method and apparatus for execution of operations in a flash memory array |
JPH0778499A (ja) * | 1993-09-10 | 1995-03-20 | Advantest Corp | フラッシュメモリ試験装置 |
-
1994
- 1994-07-20 FR FR9409202A patent/FR2722907B1/fr not_active Expired - Fee Related
-
1995
- 1995-06-07 US US08/484,873 patent/US5651128A/en not_active Expired - Lifetime
- 1995-07-18 DE DE69500112T patent/DE69500112T2/de not_active Expired - Fee Related
- 1995-07-18 EP EP95401709A patent/EP0696031B1/fr not_active Expired - Lifetime
- 1995-07-20 JP JP20651695A patent/JP2843006B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0864000A (ja) | 1996-03-08 |
FR2722907A1 (fr) | 1996-01-26 |
US5651128A (en) | 1997-07-22 |
DE69500112D1 (de) | 1997-01-30 |
DE69500112T2 (de) | 1997-04-17 |
EP0696031B1 (fr) | 1996-12-18 |
EP0696031A1 (fr) | 1996-02-07 |
FR2722907B1 (fr) | 1996-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19981006 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |