JP2809478B2 - Method for manufacturing resin-encapsulated semiconductor device - Google Patents
Method for manufacturing resin-encapsulated semiconductor deviceInfo
- Publication number
- JP2809478B2 JP2809478B2 JP2138278A JP13827890A JP2809478B2 JP 2809478 B2 JP2809478 B2 JP 2809478B2 JP 2138278 A JP2138278 A JP 2138278A JP 13827890 A JP13827890 A JP 13827890A JP 2809478 B2 JP2809478 B2 JP 2809478B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- encapsulated semiconductor
- semiconductor element
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は、樹脂封止型半導体装置の製造方法、特
に、実装面積の縮小化により小型化を図った樹脂封止型
半導体装置の製造方法に関するものである。Description: BACKGROUND OF THE INVENTION The present invention relates to a method of manufacturing a resin-sealed semiconductor device, and more particularly, to a method of manufacturing a resin-sealed semiconductor device with a reduced mounting area. It is about.
［従来の技術］ 第９図は従来の樹脂封止型半導体装置の外形を示す斜
視図であり、図において樹脂封止型半導体装置（１）
は、半導体素子（図示しない）を内部に封止した封止樹
脂（２）から複数のリード（３）が外部に突出した形状
である。[Prior Art] FIG. 9 is a perspective view showing an outer shape of a conventional resin-encapsulated semiconductor device.
Has a shape in which a plurality of leads (3) project outside from a sealing resin (2) in which a semiconductor element (not shown) is sealed.
従来の樹脂封止型半導体装置（１）は上述したように
構成され、この樹脂封止型半導体装置（１）の製造は、
第10図及び第11図に示すように、リード（３）、ダイパ
ッド（４）、タイバ〈５）及び枠（６）からなるリード
フレーム（７）を用い、ダイパッド（４）上に半導体素
子（８）を載置して接着材（９）により固着した後、半
導体素子（８）上の電極（10）とリード（３）とをワイ
ヤ（11）て電気的に接続する。The conventional resin-encapsulated semiconductor device (1) is configured as described above.
As shown in FIGS. 10 and 11, using a lead frame (7) including a lead (3), a die pad (4), a tie bar (5) and a frame (6), a semiconductor element ( After placing 8) and fixing it with the adhesive 9, the electrode 10 on the semiconductor element 8 and the lead 3 are electrically connected with the wire 11.
次いで、第11図にその断面を示すように、金型（12）
を用いて封止樹脂（２）をトランスファー成形した後、
リード（３）を切断、曲げ加工して第９図に示した半導
体装置（１）に仕上げられる。Then, as shown in FIG. 11, the mold (12)
After transfer molding the sealing resin (2) using
The lead (3) is cut and bent to complete the semiconductor device (1) shown in FIG.
［発明が解決しようとする課題］ 上述したような樹脂封止型半導体装置（１）では、封
止樹脂（２）の外側にリード（３）が突出しているの
で、基板に実装する面積が樹脂パッケージより大きくな
り、実装面積を一層縮小化するという要望に応え難いと
いう問題点があった。[Problems to be Solved by the Invention] In the resin-encapsulated semiconductor device (1) as described above, since the leads (3) protrude outside the encapsulation resin (2), the area to be mounted on the substrate is limited. There is a problem that it is difficult to meet the demand for further reducing the mounting area because of being larger than the package.
この発明は、このような問題点を解決するためになさ
れたもので、実装面積が樹脂パッケージより大きくなら
ない樹脂封止型半導体装置を簡単に製造することのでき
る樹脂封止型半導体装置の製造方法を得ることを目的と
する。The present invention has been made to solve such a problem, and a method of manufacturing a resin-encapsulated semiconductor device capable of easily manufacturing a resin-encapsulated semiconductor device whose mounting area does not become larger than that of a resin package. The purpose is to obtain.
［課題を解決するための手段］ この発明に係る樹脂封止型半導体装置の製造方法は、
半導体素子の電極上に、封止樹脂に侵されにくくかつ後
の工程で溶剤により除去可能なコーティング樹脂を塗布
し、金型内で樹脂封止した後にコーティング樹脂を溶剤
で除去し、電極上に形成した封止樹脂の孔内に金属を埋
設して封止樹脂の表面から突出する外部電極を設けるも
のである． ［実施例］ 第１図はこの発明の樹脂封止型半導体装置の製造方法
で得られた樹脂封止型半導体装置の外形を示す斜視図で
あり、半導体装置（1A）には、突出したリードはなく、
封止樹脂（２）の上部に封止樹脂（２）の表面から突出
した外部電極（13）が形成されている。[Means for Solving the Problems] A method for manufacturing a resin-encapsulated semiconductor device according to the present invention includes:
On the electrodes of the semiconductor element, apply a coating resin that is not easily eroded by the sealing resin and can be removed by a solvent in a later step, and after sealing the resin in a mold, the coating resin is removed with the solvent, and the electrodes are removed. A metal is buried in the hole of the formed sealing resin and an external electrode protruding from the surface of the sealing resin is provided. Embodiment FIG. 1 is a perspective view showing an outer shape of a resin-encapsulated semiconductor device obtained by a method of manufacturing a resin-encapsulated semiconductor device according to the present invention. Not,
An external electrode (13) protruding from the surface of the sealing resin (2) is formed above the sealing resin (2).
上述したように構成された樹脂封止型半導体装置（1
A）の製造は、第２図に示す半導体素子（8A）の電極（1
0）上に、第3A図及び第３図に示すようにコーティング
樹脂（14）を塗布する。このコーティング樹脂（14）と
しては、後の工程で溶剤により除去することができ、か
つ封止樹脂（２）に侵されにくい例えばビニル系樹脂、
アクリル系樹脂等が使用できる。次に、このコーティン
グ樹脂（14）を塗布した半導体素子（8A）をリードフレ
ーム（7A）のダイパッド（４）上に載置し接着材（９）
で固着する。The resin-encapsulated semiconductor device (1
The production of the semiconductor device (8A) shown in FIG.
0) On top, a coating resin (14) is applied as shown in FIG. 3A and FIG. As the coating resin (14), for example, a vinyl resin which can be removed by a solvent in a later step and is not easily attacked by the sealing resin (2),
Acrylic resin or the like can be used. Next, the semiconductor element (8A) coated with the coating resin (14) is placed on the die pad (4) of the lead frame (7A), and the adhesive (9)
To fix.
なお、この発明による樹脂封止型半導体装置では外部
電極（13）を用いるため、第４図に示すように、リード
フレーム（7A）にはリードが設けられていない。Since the resin-encapsulated semiconductor device according to the present invention uses the external electrodes (13), no leads are provided on the lead frame (7A) as shown in FIG.
次に、第５図に示すように、金型（12）を用いること
によって、コーティング樹脂（14）が金型（12）と接し
たままで封止樹脂（２）を金型（12）内に注入し、トラ
ンスファー成形する。このようにして成形された半導体
素子（8A）の断面を第６図に示す。Next, as shown in FIG. 5, by using the mold (12), the sealing resin (2) is placed in the mold (12) while the coating resin (14) is in contact with the mold (12). And transfer-molded. FIG. 6 shows a cross section of the semiconductor element (8A) thus formed.
次に、溶剤例えばアセトンを用いてコーティング樹脂
（14）を除去すると、第７図に示すように電極（10）上
の封止樹脂（２）に孔（15）が形成される。Next, when the coating resin (14) is removed using a solvent such as acetone, a hole (15) is formed in the sealing resin (2) on the electrode (10) as shown in FIG.
次いで、この孔（15）にめっき等により金属を埋設
し、第８図に示すように封止樹脂（２）の表面から突出
した外部電極（13）を形成する。Next, a metal is buried in the hole (15) by plating or the like, and an external electrode (13) projecting from the surface of the sealing resin (2) is formed as shown in FIG.
このようにして、第１図に示した外観の樹脂封止型半
導体装置（1A）が簡単に得られる。In this manner, the resin-encapsulated semiconductor device (1A) having the appearance shown in FIG. 1 can be easily obtained.
［発明の効果］ 以上説明したとおり、この発明の樹脂封止型半導体装
置の製造方法によれば、半導体素子の複数の電極の表面
に、封止樹脂では侵されず溶剤で除去可能なコーティン
グ樹脂を被着させる工程と、この半導体素子をリードフ
レームのダイパッドに接合する工程と、上記電極に被着
されたコーティング樹脂を溶解して上記封止樹脂に上記
電極に達する孔を形成する工程と、上記孔に金属を埋設
し上記封止樹脂の表面から突出する外部電極を形成する
工程とを含んでいるので、半導体装置の実装面積が樹脂
パッケージの寸法と同じで済み、実装面積を従来に比べ
格段に縮小することができる樹脂封止型半導体装置を簡
単に得ることができる。[Effects of the Invention] As described above, according to the method for manufacturing a resin-encapsulated semiconductor device of the present invention, the coating resin that can be removed by a solvent without being affected by the encapsulation resin on the surfaces of the plurality of electrodes of the semiconductor element And the step of joining this semiconductor element to the die pad of the lead frame, the step of dissolving the coating resin applied to the electrode and forming a hole in the sealing resin to reach the electrode, Burying a metal in the hole and forming an external electrode protruding from the surface of the sealing resin, so that the mounting area of the semiconductor device is the same as the size of the resin package, and the mounting area is A resin-encapsulated semiconductor device that can be significantly reduced can be easily obtained.
第１図はこの発明の製造方法により得られた樹脂封止型
半導体装置を示す斜視図、第２図は第１図に示した樹脂
封止型半導体装置に用いられる半導体素子の平面図、第
3A図及び第3B図は第２図に示した半導体素子の電極上に
コーティング樹脂が施された状態を示すそれぞれ平面図
及び側面図、第４図は第１図に示した樹脂封止型半導体
装置に用いられるリードフレームの斜視図、第５図〜第
８図はこの発明の樹脂封止型半導体装置の製造方法の各
製造工程を示す断面図、第９図は従来の樹脂封止型半導
体装置を示す斜視図、第10図は第９図に示した樹脂封止
型半導体装置に用いられるリードフレームの斜視図、第
11図は第９図に示した樹脂封止型半導体装置の半導体素
子を金型に入れた状態を示す断面図である。 図において、（1A）は樹脂封止型半導体装置、（２）は
封止樹脂、（４）はダイパッド、（５）はタイバ、
（６）は枠、（7A）はリードフレーム、〈8A）は半導体
素子、（９）は接着材、（10）は電極、（12）は金型、
（13）は外部電極、（14）はコーティング樹脂、（15）
は孔である。 なお、各図中、同一符号は同一または相当部分を示す。FIG. 1 is a perspective view showing a resin-encapsulated semiconductor device obtained by the manufacturing method of the present invention, FIG. 2 is a plan view of a semiconductor element used in the resin-encapsulated semiconductor device shown in FIG.
3A and 3B are a plan view and a side view, respectively, showing a state in which a coating resin is applied on the electrodes of the semiconductor element shown in FIG. 2, and FIG. 4 is a resin-sealed semiconductor shown in FIG. FIGS. 5 to 8 are perspective views of a lead frame used in the device, FIGS. 5 to 8 are cross-sectional views showing respective manufacturing steps of a method for manufacturing a resin-encapsulated semiconductor device of the present invention, and FIG. 9 is a conventional resin-encapsulated semiconductor. FIG. 10 is a perspective view of a lead frame used in the resin-encapsulated semiconductor device shown in FIG. 9, and FIG.
FIG. 11 is a cross-sectional view showing a state where the semiconductor element of the resin-encapsulated semiconductor device shown in FIG. 9 is placed in a mold. In the figure, (1A) is a resin-sealed semiconductor device, (2) is a sealing resin, (4) is a die pad, (5) is a tie bar,
(6) is a frame, (7A) is a lead frame, <8A) is a semiconductor element, (9) is an adhesive, (10) is an electrode, (12) is a mold,
(13) is an external electrode, (14) is a coating resin, (15)
Is a hole. In the drawings, the same reference numerals indicate the same or corresponding parts.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 23/28 - 23/30 H01L 21/56 H01L 21/92──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 23/28-23/30 H01L 21/56 H01L 21/92
Claims (1)
たダイパッドを含んで樹脂封止する封止樹脂を備えた樹
脂封止型半導体装置の製造方法であって、上記半導体素
子の複数の電極の表面に、上記封止樹脂では侵されず溶
剤で除去可能なコーティング樹脂を被着させる工程と、
この半導体素子をリードフレームのダイパッドに接合す
る工程と、上記電極に被着されたコーティング樹脂を溶
解して上記封止樹脂に上記電極に達する孔を形成する工
程と、上記孔に金属を埋設し上記封止樹脂の表面から突
出する外部電極を形成する工程とを含んでなる樹脂封止
型半導体装置の製造方法。1. A method of manufacturing a resin-encapsulated semiconductor device including a sealing resin for encapsulating a resin including a die pad to which a semiconductor element having a plurality of electrodes is bonded, wherein the plurality of electrodes of the semiconductor element are provided. A step of applying a coating resin that is not attacked by the sealing resin and can be removed by a solvent,
Joining the semiconductor element to a die pad of a lead frame, dissolving a coating resin applied to the electrode to form a hole reaching the electrode in the sealing resin, and embedding a metal in the hole. Forming an external electrode protruding from the surface of the sealing resin.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2138278A JP2809478B2 (en) | 1990-05-30 | 1990-05-30 | Method for manufacturing resin-encapsulated semiconductor device |
| KR1019910004310A KR940007948B1 (en) | 1990-05-30 | 1991-03-19 | Method of making resin molded semiconductor device |
| US07/725,895 US5139969A (en) | 1990-05-30 | 1991-07-01 | Method of making resin molded semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2138278A JP2809478B2 (en) | 1990-05-30 | 1990-05-30 | Method for manufacturing resin-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0433358A JPH0433358A (en) | 1992-02-04 |
| JP2809478B2 true JP2809478B2 (en) | 1998-10-08 |
Family
ID=15218179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2138278A Expired - Fee Related JP2809478B2 (en) | 1990-05-30 | 1990-05-30 | Method for manufacturing resin-encapsulated semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2809478B2 (en) |
| KR (1) | KR940007948B1 (en) |
-
1990
- 1990-05-30 JP JP2138278A patent/JP2809478B2/en not_active Expired - Fee Related
-
1991
- 1991-03-19 KR KR1019910004310A patent/KR940007948B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR940007948B1 (en) | 1994-08-29 |
| JPH0433358A (en) | 1992-02-04 |
| KR910020858A (en) | 1991-12-20 |
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