JP2789827B2 - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce a thermal resistance due to thin film bonding and to increase an yield of assembly for a semiconductor device. CONSTITUTION:A package 5 and a semiconductor element 1 which is attached to the attachment surface 8 of the package 5 are formed nearly in the same size. This device is so structured that the package may be die-bonded (40) onto the semiconductor element 1 with a thin film adhesive 20.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to an improvement in a semiconductor device formed by die-bonding a semiconductor element to a package with an adhesive.

[0002]

2. Description of the Related Art Conventionally, a die bonding method using an adhesive has been performed in an infrared detector used under extremely low temperature conditions such as liquid nitrogen temperature (77 ° K.). By the way, since such infrared detectors are used under extremely low temperature conditions, the infrared detectors are liable to undergo heat shrinkage, and in the die bonding method using a hard substance such as solder, these die bonding agents are not included in the package. Since the displacement difference due to the difference in the heat shrinkage of the semiconductor element cannot be absorbed, the semiconductor element is destroyed. For this reason, in the die bonding method for the infrared detector, a low-temperature adhesive that is flexible and tough under low-temperature conditions is used. In general, an epoxy-based or urethane-based cold-setting adhesive is often used as the low-temperature adhesive, and examples of such low-temperature adhesives include Hysole (trade name) and Crest (trade name). Have been. These low-temperature adhesives have flexibility and high adhesive strength under low-temperature conditions, but have very high thermal resistance. Therefore, when the semiconductor device is used under cryogenic conditions, the semiconductor element is cooled through the package,
The semiconductor element does not cool sufficiently, and as a result, there arises a problem that the performance as a semiconductor device cannot be sufficiently exhibited.

FIGS. 7 and 8 show a conventional semiconductor device. In these figures, reference numeral 1 denotes a semiconductor element;
Is an infrared incident surface of the semiconductor element 1, 3 is an infrared detection area,
4 is a die pad, 5 is a package, 6 is a pad, and 7 is a lead, which is connected to the pad 6 in the package 5.
Reference numeral 8 denotes an adhesive applied surface area of the package 5, reference numeral 9 denotes an adhesive applied to the adhesive applied surface area 8 of the package 5, and reference numeral 10 protrudes from the adhesive applied surface area 8 to the infrared detection area 3 during die bonding. Adhesive. In the semiconductor device having the above configuration, die bonding is performed in the following procedure. First, an adhesive 9 is applied to the entire surface of the adhesive applied surface area 8 of the package 5 by a predetermined method. After the application of the adhesive 9 is completed, the semiconductor element 1 is die-bonded to the center of the package 5 using a bonding device. At this time, the semiconductor element 1 is pressed from above in order to ensure the bonding state between the semiconductor element 1 and the package 5. Then, the adhesive 9 is cured in this state, whereby the die bonding process is completed.

[0004]

In the conventional die bonding method as described above, the viscosity of the adhesive 9 is high.
When this is applied to the adhesive applied surface region 8, the film becomes inevitably thick, the thermal resistance between the package 5 and the semiconductor element 1 increases, and the performance of the semiconductor element 1 during operation of the semiconductor device is increased. Has not been fully exhibited. Further, in order to sufficiently cool the semiconductor element 1 in order to increase the adhesive strength, the adhesive area between the semiconductor element 1 and the package 5 needs to be as large as possible. When the semiconductor element 1 is pressed down during the die bonding, the adhesive 9 protrudes to the infrared detection area 3 on the infrared incident surface 2 side of the semiconductor element 1 and the die bonding is performed. There is a problem that the yield of the assembly is reduced due to the failure.

The present invention has been made in view of such circumstances, and enables thin film bonding between a package and a semiconductor element, thereby reducing the thermal resistance between the package and the semiconductor element and improving the performance of the semiconductor element. It is an object of the present invention to provide a semiconductor device capable of sufficiently exhibiting the above characteristics, reducing the protrusion of an adhesive, and improving the yield of assembly by die bonding.

[0006]

In order to satisfy such a demand, a semiconductor device according to the present invention comprises a package and a semiconductor element bonded to a surface to be bonded of the package having the same size. , And a package is die-bonded on the semiconductor element.

[0007]

According to the present invention, the bonding between a package and a semiconductor element formed in the same size is easily made into a thin film bonding by die bonding between the package and the semiconductor element. In addition, the performance of the semiconductor device can be sufficiently exhibited, and the protrusion of the adhesive into the infrared detection region on the semiconductor element can be reduced as much as possible, thereby improving the yield of the assembly.

[0008]

1 to 6 show an embodiment of a semiconductor device according to the present invention. In these figures, the same or corresponding parts as those in FIGS. 7 and 8 are denoted by the same reference numerals. The description is omitted. According to the present invention, the package 5 and the semiconductor element 1 adhered to the surface to be adhered of the package 5 are made to have substantially the same size as is apparent from FIGS. It is characterized by its configuration. Here, in FIG. 2, reference numeral 11 denotes a pattern area where a detector or the like is manufactured on the semiconductor element 1;
Numeral 2 denotes a dummy area having nothing on the semiconductor element 1. FIGS. 3 and 4 show a package 5 for accommodating the semiconductor element 1 shown in FIG. 2. Here, the portion indicated by reference numeral 8 in FIG. This is the application surface area. Such an adhesive applied surface area 8
FIG. 6 shows an example of a method of applying the thin film adhesive 20 to the surface table. In FIG. 6, reference numeral 30 denotes a plane table on which the plane is accurate, and FIG. As shown in (1), the thin film adhesive 20 is thinly and uniformly stretched and placed. A roller 31 transfers the thin film adhesive 20.
From the state shown in FIG. 6A, the thin film adhesive 20 is transferred to the outer peripheral surface as shown in FIG. 6B. Then, the roller 31 is brought into contact with the adhesive-applied surface area 8 which is the surface to be adhered of the package 5 and rolled, so that the thin film adhesive 20 is applied to the package 5 side as shown in FIG. It is to be transferred and applied. FIG. 5 shows a method for die-bonding the semiconductor element 1 and the package 5 described above. In the figure, reference numeral 40 denotes a die-bonding jig, on which the semiconductor element 1 is mounted as shown. Then, the package 5 coated with the thin film adhesive 20 as described above is mounted on the semiconductor element 1 mounted on the die bonding jig 40 as described above, and mounted on the jig 40,
The semiconductor element 1 and the package 5 may be die-bonded. Here, in the die bonding method of the present invention, since the package 5 is die-bonded on the semiconductor element 1, unlike the conventional case, the dummy region 12 on which no pattern is formed is different from the conventional case. Is required. On the other hand, the size of the package 5 is the same as the size of the semiconductor element 1, and the size of the bonding surface application surface area 8 is equal to the size of the dummy area of the semiconductor element 1.

In such a configuration, first, the adhesive 20 is attached to the package 5 by the method shown in FIG.
Is applied as a thin film. Next, the package 5 to which the adhesive 20 has been applied and the semiconductor element 1 are die-bonded in the order shown in FIGS. That is, it is preferable to use a die bonding jig having a slightly larger concave portion than that of the semiconductor element 1 and to perform die bonding between the semiconductor element 1 and the package 5 at that portion. First, the semiconductor element 1 is mounted in the recess of the jig 40 with the infrared incident surface 2 facing downward as shown in FIG. Then, in this state, as described above, the package 5 on which the thin film adhesive 20 has been applied in advance is mounted and mounted on the jig 40. In this state, pressing is performed from above to secure the die bond. Let it cure. At this time, the alignment between the semiconductor element 1 and the package 5 is completed without any particular operation. In such a configuration, the package 5 having the same size and the semiconductor element 1 are die-bonded, so that the thin film can be easily bonded between the packages 5 and the semiconductor element 1. In addition to reducing the thermal resistance between the two, the performance of the semiconductor device can be sufficiently exhibited, and the adhesive 2
In this case, it is possible to minimize the protrusion of the No. 0 on the semiconductor element 1 into the infrared detection region 3 and to improve the yield of the assembly due to a defective die bond.

The present invention is not limited to the structure of the embodiment described above, and the structure and the like of each part can be freely changed. For example, in the above-described embodiment, the die bonding jig 40
Although a concave portion is provided for the setting, a positioning pin or the like may be provided vertically for alignment instead. In the above-described embodiment, the transfer roller 31 is used to apply the thin film adhesive 20 to the package 5. However, it goes without saying that various adhesive application methods may be used instead. . In short, the thin film adhesive 20
Any method that can be applied on the package 5 may be used.

[0011]

As described above, according to the semiconductor device of the present invention, the package and the semiconductor element adhered to the surface to be adhered of the package are formed in the same size, and the Since the package is configured to be die-bonded, thin films can be easily bonded between them, thereby reducing the thermal resistance between the package and the semiconductor element and sufficiently improving the performance as a semiconductor device. In addition to reducing the amount of adhesive that protrudes into the infrared detection area on the semiconductor element, the yield can be improved by die bonding of the assembly. There are various excellent effects such as performing.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a state in which die bonding between a semiconductor element and a package is performed on a die bonding jig, showing one embodiment of a semiconductor device according to the present invention.

FIG. 2 is a plan view showing a schematic configuration of a semiconductor element.

FIG. 3 is a plan view showing a schematic configuration of a package.

FIG. 4 is a sectional view taken along line IV-IV in FIG.

FIG. 5 is a schematic sectional view showing a state where the semiconductor element is mounted on a die bonding jig.

FIG. 6 is a schematic explanatory view for explaining a method of applying a thin film adhesive to a surface to be bonded of a package.

FIG. 7 is a schematic sectional view illustrating a conventional semiconductor device.

8 is a sectional view taken along line VIII-VIII in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Infrared incident surface 3 Infrared detection area 4 Die pad 5 Package 6 Pad 7 Lead 8 Adhesive applied surface area (adhered surface) 12 Dummy area 20 Thin film adhesive 40 Die bond jig

Claims (1)

(57) [Claims] 1. A semiconductor device comprising: a package; and a semiconductor element adhered to a surface to be adhered of the package, wherein the semiconductor element has a size equivalent to that of the package.