JPH04297040A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce a thermal resistance due to thin film bonding and to increase an yield of assembly for a semiconductor device. CONSTITUTION:A package 5 and a semiconductor element 1 which is attached to the attachment surface 8 of the package 5 are formed nearly in the same size. This device is so structured that the package may be die-bonded (40) onto the semiconductor element 1 with a thin film adhesive 20.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices, and more particularly to improvements in semiconductor devices formed by die-bonding a semiconductor element to a package using an adhesive.

0002

2. Description of the Related Art Conventionally, in infrared detectors and the like used under extremely low temperature conditions such as liquid nitrogen temperature (77°K), a die bonding method using an adhesive has been used. By the way, since such infrared detectors are used under extremely low temperature conditions, they tend to undergo thermal shrinkage, and in die bonding methods that use hard substances such as solder, these die bonding agents are difficult to bond with the package. Since the displacement difference due to the difference in thermal contraction rate of the semiconductor element cannot be absorbed, this results in destruction of the semiconductor element. For this reason, in the die-bonding method for infrared detectors, a low-temperature adhesive that is flexible and tough under low-temperature conditions is used. In general, epoxy-based or urethane-based room-temperature curing adhesives are often used as low-temperature adhesives, and examples of such low-temperature adhesives include Hysole (product name) and Crest (product name). It is being These low-temperature adhesives have flexibility and high adhesive strength under low-temperature conditions, but on the other hand, they have very high thermal resistance. Therefore, when using semiconductor devices under extremely low temperature conditions,
Since the semiconductor element is cooled through the package, the semiconductor element is not cooled down sufficiently, resulting in a problem that the performance of the semiconductor device cannot be fully demonstrated.

7 and 8 show conventional semiconductor devices. In these figures, 1 is a semiconductor element, and 2 is a semiconductor device.
is the infrared incident surface of the semiconductor element 1, 3 is the infrared detection area,
4 is a die pad, 5 is a package, 6 is a pad, and 7 is a lead, which is connected to the pad 6 within the package 5. 8 is the adhesive applied surface area of the package 5, 9 is the adhesive applied to the adhesive applied surface area 8 of the package 5, and 10 is the adhesive applied to the infrared ray detection area 3 from the adhesive applied surface area 8 during die bonding. It is an adhesive. In the semiconductor device having the above configuration, die bonding was performed in the following procedure. First, the adhesive 9 is applied to the entire surface of the adhesive application surface area 8 of the package 5 using a predetermined method. After the application of the adhesive 9 is completed, the semiconductor element 1 is die-bonded to the center of the package 5 using a bonding device. At this time, in order to ensure the bonding state between the semiconductor element 1 and the package 5, the semiconductor element 1 is pressed from above. Then, the adhesive 9 is cured in this state, thereby completing the die bonding process.

0004

[Problems to be Solved by the Invention] However, in the conventional die bonding method as described above, the viscosity of the adhesive 9 is high;
When this adhesive is applied to the adhesive application surface area 8, it inevitably becomes a thick film, which increases the thermal resistance between the package 5 and the semiconductor element 1, and reduces the performance of the semiconductor element 1 during operation of the semiconductor device. This has caused the problem that it is not possible to fully utilize the functions. In addition, in order to increase the adhesive strength and to sufficiently cool the semiconductor element 1, it is necessary to increase the adhesive area between the semiconductor element 1 and the package 5 as much as possible. The adhesive 9 must be applied, but if applied in this way, when the semiconductor element 1 is pressed during die bonding, the adhesive 9 will spill out into the infrared detection area 3 on the infrared incident surface 2 side of the semiconductor element 1, preventing the die bonding. There is a problem in that the yield of the assembly is reduced due to defects.

The present invention was made in view of the above circumstances, and enables thin film bonding between a package and a semiconductor element, thereby reducing the thermal resistance between the package and the semiconductor element and improving the performance of the semiconductor element. It is an object of the present invention to provide a semiconductor device which can fully exhibit the properties of the semiconductor device, reduce adhesive extrusion, and improve the yield of assembly by die bonding.

[0006]

[Means for Solving the Problems] In order to meet such demands, a semiconductor device according to the present invention has a package and a semiconductor element bonded to the surface of the package that are of the same size. , the package is die-bonded onto the semiconductor element.

[0007]

[Function] According to the present invention, by die-bonding the package and the semiconductor element formed in the same size, the bonding between them is easily made into a thin film bond, thereby reducing the thermal resistance between the package and the semiconductor element. In addition, it is possible to fully exhibit the performance of a semiconductor device, and to reduce as much as possible the protrusion of the adhesive into the infrared detection region on the semiconductor element, thereby improving the yield of the assembly.

[0008]

[Embodiment] FIGS. 1 to 6 show an embodiment of a semiconductor device according to the present invention, and in these figures, the same or corresponding parts as in FIGS. 7 and 8 described above are designated by the same numbers. Therefore, the explanation will be omitted. Now, according to the present invention, the package 5 and the semiconductor element 1 to be bonded to the surface of the package 5 are made to have approximately the same size, as is clear from FIGS. 1, 2, 3, etc. It is characterized by its structure. Here, in FIG. 2, reference numeral 11 denotes a pattern area where a detector etc. are manufactured on the semiconductor element 1;
is a dummy area where there is nothing on the semiconductor element 1. Also,
3 and 4 show a package 5 that houses the semiconductor element 1 shown in FIG.
The part indicated by is the adhesive coated surface area which becomes the surface to be adhered to the semiconductor element 1. An example of a method of applying the thin film adhesive 20 to the adhesive application surface area 8 is shown in FIG. As shown in FIG. 6(a), the thin film adhesive 20 is spread thinly and uniformly on the adhesive 30. Reference numeral 31 denotes a roller for transferring the thin film adhesive 20, and the thin film adhesive 20 is transferred from the state shown in FIG. 6(a) to the outer circumferential surface of the roller 31 as shown in FIG. 6(b). By rolling such a roller 31 in contact with the adhesive application surface area 8 which is the surface to be adhered of the package 5, as shown in FIG.
As shown in FIG. 2, the thin film adhesive 20 is transferred and applied to the package 5 side. FIG. 5 shows a method of die-bonding the semiconductor element 1 and the package 5 described above. In the figure, 40 is a die-bonding jig, and the semiconductor element 1 is mounted on this die-bonding jig 40 as shown. Then, the package 5 coated with the thin film adhesive 20 as described above is placed on the semiconductor element 1 mounted on the die bonding jig 40 in this manner, and the package 5 is mounted on the jig 40. It is recommended to die-bond the Here, in the die bonding method according to the present invention, in order to die bond the package 5 onto the semiconductor element 1, the semiconductor element 1 has a dummy region 12 in which no pattern is formed, unlike the conventional case.
Is required. On the other hand, the size of the package 5 is the same as the size of the semiconductor element 1, and its adhesive surface coating area 8
The size of the area is equal to that of the dummy area of the semiconductor element 1.

In this configuration, first, the adhesive 20 is applied to the package 5 by the method shown in FIG.
Apply a thin film. Next, the package 5 coated with the adhesive 20 and the semiconductor element 1 are die-bonded in the order shown in FIGS. 4 and 1. That is, it is preferable to use a die bonding jig having a recess slightly larger than that of the semiconductor element 1, and perform die bonding between the semiconductor element 1 and the package 5 at that part. First, the semiconductor element 1 is mounted in the recess of the jig 40, as shown in FIG. 5, with the infrared incident surface 2 facing downward. Then, in this state, the package 5 coated with the thin film adhesive 20 in advance is mounted on the jig 40 as described above, and in this state, it is pressed from above to ensure die bonding, and in this state, the adhesive 20 is applied. Let it harden. At this time, the alignment of the semiconductor element 1 and the package 5 is completed without any special action. In such a configuration, by die-bonding the package 5 and the semiconductor element 1, which have the same size, the bonding between them is easily achieved by thin film bonding, and thereby the package 5 and the semiconductor element 1 are bonded together. In addition to reducing the thermal resistance between
It is possible to reduce as much as possible the protrusion of 0 to the infrared detection area 3 on the semiconductor element 1, and improve the yield of assemblies due to defective die bonding.

[0010] The present invention is not limited to the structure of the above-described embodiment, and the structure of each part may be changed as appropriate. For example, in the embodiment described above, the die bonding jig 40
A recessed portion is provided for setting, but instead of this, a configuration may be adopted in which a positioning pin or the like is erected for alignment. Further, in the above embodiment, the thin film adhesive 20 is applied to the package 5 using the transfer roller 31, but it goes without saying that various adhesive application methods may be adopted instead. . In short, the thin film adhesive 20,
Any method that can be applied onto the package 5 may be used.

[0011]

As explained above, according to the semiconductor device according to the present invention, the package and the semiconductor element bonded to the surface to be bonded of the package are configured to have the same size, and the semiconductor element is Since the package is configured to be die-bonded, it is easy to bond them with a thin film, which reduces the thermal resistance between the package and the semiconductor element, and provides sufficient performance as a semiconductor device. In addition, it is possible to reduce as much as possible the protrusion of the adhesive into the infrared detection area, etc. on the semiconductor element, improve the yield of die bonding of the assembly, and also to easily and precisely align the semiconductor element and the package. There are various excellent effects such as:

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view showing a state in which a semiconductor element and a package are die-bonded on a die-bonding jig, showing an embodiment of a semiconductor device according to the present invention.

FIG. 2 is a plan view showing a schematic configuration of a semiconductor element.

FIG. 3 is a plan view showing a schematic configuration of the package.

FIG. 4 is a sectional view taken along the line IV-IV in FIG. 3;

FIG. 5 is a schematic cross-sectional view showing a state in which a semiconductor element is mounted on a die bonding jig.

FIG. 6 is a schematic diagram for explaining a method of applying a thin film adhesive to a surface of a package to be adhered.

FIG. 7 is a schematic cross-sectional view illustrating a conventional semiconductor device.

FIG. 8 is a sectional view taken along line VIII-VIII in FIG. 7;

[Explanation of symbols]

1 Semiconductor element 2 Infrared incident surface 3 Infrared detection region 4 Die pad 5 Package 6 Pad 7 Lead 8 Adhesive application surface region (adhered surface) 12
Dummy area 20 Thin film adhesive 40 Die bond jig

Claims (1)

[Claims] 1. A semiconductor device comprising a package and a semiconductor element bonded to an adhesive surface of the package, the semiconductor element having the same size as the package.