JP2766369B2 - 半導体用ボンディング細線 - Google Patents

半導体用ボンディング細線

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Publication number
JP2766369B2
JP2766369B2 JP2068423A JP6842390A JP2766369B2 JP 2766369 B2 JP2766369 B2 JP 2766369B2 JP 2068423 A JP2068423 A JP 2068423A JP 6842390 A JP6842390 A JP 6842390A JP 2766369 B2 JP2766369 B2 JP 2766369B2
Authority
JP
Japan
Prior art keywords
bonding
coating
layer
wire
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2068423A
Other languages
English (en)
Other versions
JPH03270142A (ja
Inventor
裕之 近藤
宏平 巽
正生 木村
清 小野寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON TEKISASU INSUTSURUMENTSU KK
Nippon Steel Corp
Original Assignee
NIPPON TEKISASU INSUTSURUMENTSU KK
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON TEKISASU INSUTSURUMENTSU KK, Nippon Steel Corp filed Critical NIPPON TEKISASU INSUTSURUMENTSU KK
Priority to JP2068423A priority Critical patent/JP2766369B2/ja
Publication of JPH03270142A publication Critical patent/JPH03270142A/ja
Priority to US08/440,177 priority patent/US5554443A/en
Application granted granted Critical
Publication of JP2766369B2 publication Critical patent/JP2766369B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • Y10T428/294—Coated or with bond, impregnation or core including metal or compound thereof [excluding glass, ceramic and asbestos]
    • Y10T428/2942—Plural coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core
    • Y10T428/294—Coated or with bond, impregnation or core including metal or compound thereof [excluding glass, ceramic and asbestos]
    • Y10T428/2942—Plural coatings
    • Y10T428/2947—Synthetic resin or polymer in plural coatings, each of different type

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体チップの電極（パッド）とリードを
結ぶボンディング細線に関するものであり、特に、絶縁
性と耐摩耗性を有する被覆層を設けたボンディング細線
に係るものである。
（従来の技術） 半導体チップと、外部出力端子であるリードとは、ボ
ンディング細線で連結される。すなわち、例えば第２図
に示すようにタブ部１に搭載されたチップ３の上には回
路端子（パッド）４が設けられ、このパッド４と、外部
出力端子（インナーリード）５とを、ボンディング細線
６の各端部で接合して連結されている。ボンディング細
線は、図示していないが、リールから繰り出され、ロー
ラー９、クランパー８等で案内されボンディング工具
（キャピラリー）７の通孔10先端に達する。キャピラリ
ー７の先端部で、細線の先端は、ガス加熱またはアーク
加熱等の手段によって加熱溶融され、ボール11を形成す
る。このボールは、キャピラリーでパッド上に熱間圧着
あるいは超音波振動を併用して圧着され接合部12（第１
ボンディング）をつくる。次いでキャピラリーより、導
出された細線は、キャピラリー先端でインナーリード上
に接触し、キャピラリーの超音波振動を併用した熱圧着
により、接合される（第２ボンディング）。
ボンディング細線は通常Au,Cu,Al等の金属細線が用い
られ、或るループ高さを形成するようパッドとリードと
を連結するが、細線はパッドに熱圧着された部分から引
き出されるためしばしばループにたわみを生じ、半導体
チップと細線のショートが起ることがある。特に近時集
積回路の大規模化に伴って、多ピン構造になると、パッ
ドとリード接合部の距離が大きくなる傾向になり、これ
に伴いワイヤスパンが長尺化されると、前記たわみが起
き易くなると共に、細線のカール現象により、隣接細線
が接触し、細線間のショートが起ることがある。すなわ
ちこのようなことが原因となり、電気的な接触不良が発
生するという問題点があった。
このような問題点を解決するために、細線表面に絶縁
物質（第２図ｂ′参照）を被覆するという提案が特開昭
58-2339号公報や特開昭59-154054号公報に開示されてい
る。これらの公報に開示されている絶縁物質は、高分子
樹脂材料であるが、これらの樹脂によっては、前記第１
ボンディングにおいて形成するボール下部に、炭化物な
どの樹脂成分が残留することがあり、これが原因でパッ
ドとの接合不良を起すという問題がある。
一方、ボール部分の、溶けた樹脂の飛散や、溶け上り
による塊の形成によって起る接合不良を防ぐため、不活
性ガス等の流体を吹き付け、溶融した樹脂を吹き飛ばす
と共にこれを吸引する手段を設けたボンディング方法お
よび装置が特開昭63-318132号公報に開示されている。
しかし、このような手段を、多数の細線を小間隙で、し
かも連続的に結線する設備に付設するには、複雑すぎる
という難点がある。
本願出願人は、上記したような複雑な手段を用いるこ
となしに、物性を特定した芳香族ポリエステルやポリカ
ーボネート樹脂等を被覆した絶縁性にすぐれたボンディ
ング細線を、すでに特許出願（特願平1-107067号、およ
び特願平1-114580号）している。
（発明が解決しようとする課題） 絶縁被覆した細線には次の代表的な特性が要求され
る。すなわち 絶縁性（細線と半導体チップ、および細線間のショ
ートの防止） 耐熱性（ボール上方部への溶け上り（めくれ上り）
や樹脂封止時における溶融防止） 接合性（細線の連続ボンディング性、および接合強
度の保持） がそれであり、これらの特性は、前記した本願出願人の
特許出願に記述した発明には充分に備えているが、更
に、この種の被覆には、 耐摩耗性が要求される。
すなわち、前記細線のボンディング作業において、被
覆細線は、搬送時および停止時にボンディング設備と接
触する。例えば細線の搬送停止時におけるクランパーに
よるクランプや第１ボンディングから第２ボンディング
に移る際のキャピラリー内面での接触、さらに第２ボン
ディング時のキャピラリーの超音波振動により、そして
特に接合後クランプで引張り切断するときなど、被覆面
と強い接触がありそのため、傷や剥離が起る。このよう
な表面状況では充分な絶縁機能が果せない。
ところで、上述した諸特性を備えた絶縁被覆の要望は
強いにも拘らず、今までこれらを満足する被覆細線は製
造されていない。
本発明はこの要請に応えられるものであり、かつボン
ディング作業時流体吹き付けや吸引などの特別の手段が
不要であって、絶縁性、耐熱性、接合性は勿論のこと、
耐摩耗性にもすぐれた樹脂を被覆した金属細線を提供す
ることを目的とするものである。
（課題を解決するための手段） 金属細線の表面に、絶縁性、耐熱性にすぐれた樹脂の
第１の層を設け、その上部に耐摩耗性のすぐれた樹脂の
第２層を被覆したことを要旨とするものであって、 半導体用ボンディング細線の表面に被覆する第１の被
覆層が、ポリアリレート樹脂等の芳香族ポリエステル樹
脂およびポリカーボネート樹脂の少なくとも１種からな
り、また第２の被覆層が、ポリウレタン、ポリエステル
イミドおよびポリイミドの少なくとも１種からなること
を特徴とし、そして前記第２の被覆層は多層に形成して
もよく、また、第１の被覆層の厚みが0.1〜1.2μｍ、第
２の被覆層の厚みが0.1〜1.0μｍであり、かつ合計厚み
が0.3〜1.6μｍの範囲にあることを特徴とする。
以下本発明を詳細に説明する。
前述したように、高分子樹脂を表面に１層被覆した絶
縁性細線は、すでに提案されているが、これらの樹脂
で、本発明の目的とする特性を充分付与することはでき
ない。本発明は第１図に示すように細線13の表面に特性
の異った樹脂を２層（14,15）に形成し、それぞれの層
で役割を分担させた被覆構成にした点に最大の特徴を有
するものである。
すなわち、第１層14を形成する樹脂としてはポリアリ
レート等の芳香族ポリエステルおよびポリカーボネート
の少なくとも１種からなり、耐熱性、絶縁性にすぐれ、
かつ、低温での連続接合性にもすぐれた性質を有する。
また第２層15を形成する樹脂は、ポリウレタン、ポリエ
ステルイミド、およびポリイミドの少なくとも１種から
なり、すぐれた耐摩耗性を有する。勿論これら各層の樹
脂は接合性にもすぐれており、第１ボンディング部での
ボール形成において、容易に剥離し、また第２ボンディ
ング部での熱圧着での接合が極めて良好に行える。この
ような２層構造とすることにより、両層の密着性が向上
し、ボール上の溶け上り（塊状化）がなくなり、前記し
た吹き付け吸い込み手段の必要性がなくなる。
本発明において、第１層の厚さは、絶縁性の点からは
厚い程すぐれているがあまり厚くすると接合性が低下す
るので、上限を1.2μｍとした。また薄い程接合性はよ
くなるが、あまり薄くすると絶縁性（耐電圧）が悪くな
るので下限を0.1μｍとした。またこの範囲では耐熱性
は十分である。第１層厚みの好ましい範囲は0.1〜1.0μ
ｍあり、最も好ましくは0.2〜1.0μｍである。また第２
層は、細線先端にボールを形成する際に、アークの発生
にともなう熱によって、被覆体が溶け上がり塊体を作っ
て接合不良を生じないと共に、耐摩耗性を発揮するため
に0.1〜1.0μｍの範囲とする。その好ましい範囲は0.2
〜1.0μｍであり最も好ましくは0.2〜0.6μｍである。
第１層および第２層の合計厚みは0.3〜1.6μｍである
ことが好ましく0.5〜1.5μｍがより好ましい。
第２の被覆層の完全度を増すため、耐摩耗性樹脂を複
数回塗布することにより多層塗構造とすることも望まし
い。
尚、本発明における第１層を形成する樹脂は、メルト
インデックス（ASTM−D 1238準拠：温度280℃、荷重2.1
60kg）として1.0〜100g/10min.の範囲にあることが好ま
しい。すなわち、1.0g/10min.未満では粘度が高すぎ、
被覆層が均一な厚みとなりにくく、100g/10min.以上に
なると、粘度が低すぎ絶縁性が劣るからである。
本発明における被覆の成形方法は、押出し被覆法、静
電粉体コーティング法、スプレーコーティング法、電着
コーティングおよび浸漬塗り工法等が考えられるが、２
層被覆を均一に行うためには浸漬塗り工法を採用するこ
とが好ましい。
尚、本発明に用いる樹脂には、老化防止剤、難燃剤、
充填剤、電圧安定剤、滑剤、加工助剤、紫外線吸収剤等
の添加助剤を適宜配合してもよい。
（実施例） 線径30μｍのAu線に、第１層をポリアリレート、第２
層をポリウレタンの各樹脂で２層被覆し、厚さの異る11
種類のボンディング細線を作成した。別の例として、同
細線に第１層をポリカーボネート、第２層をポリウレタ
ンの２層被覆をし、厚さの異る４種類のボンディング細
線を作成した。被覆方法は、何れも浸漬塗り工法によっ
た。
各試料の被覆厚さ（層厚）を第１表および第２表に示
した。試料A,B,JおよびＯは比較例で層厚が本発明の範
囲から外れるものである。
各試料について連続ボンディング性（接合性）、絶縁
性、耐熱性、および耐摩耗性の試験を行った。結果を第
３表に示す。
連続ボンディング性は、被覆細線試料とリードフレー
ムとの連続接合を20,000回行い、そのうち、ボンディン
グできなかったものおよびプルテスト（細線にフックを
かけ、上方に0.5mm/分で引き上げて細線が破断するか、
細線がパッドもしくはリードから剥れる時の最大荷重を
測定）で4g以下のものの割合（％）を不良率とし、○印
は不良率0.01％以下、△印は不良率0.01〜0.1％未満、
×は不良率0.1％以上のものである。
絶縁性は被覆耐電圧を測定し○印は30V以上の場合、
×印は30V未満の値をあらわす。
耐熱性は接合時細線先端に形成したボールの上部200
μｍ以上にわたって被覆が剥がれた場合を×印とし、20
0μｍ未満であれば○とした。耐摩耗性は、細線長さ方
向2mmスパンに１ヶ以上の剥れがあれば×としそれ以外
は○とした。
第３表に示す結果から明らかなように本発明範囲の試
料は何れも合格であり、それぞれ良好な特性を示してい
る。比較例A,Bは一層被覆であり耐熱性、耐摩耗性が悪
く、被覆厚さの薄い試料Ｍは実用できないことがわかっ
た。尚、total厚さが厚い試料Ｊは、ボンディング性が
劣ることを示している。
（発明の効果） 以上説明したように、本発明の２層被覆したボンディ
ング細線は絶縁性、耐熱性、接合性にすぐれると共に耐
摩耗性にすぐれており、従ってボンディング不良もな
く、かつ剥離きずや細線どうしおよび半導体チップとの
ショートを防ぐことができ、さらにリード間隔を縮少し
て、集積回路の大規模化を図ることができる。また製品
歩留も高く、工業的な価値が極めて大きい。
【図面の簡単な説明】
第１図（ａ），（ｂ）は本発明の横、縦の断面を示し、
第２図（ａ），（ｂ）はボンディング工程の一例であっ
て、（ａ）はボール形成、（ｂ）は接合状況を説明する
図である。 １……タブ、２……接着剤 ３……半導体チップ、４……パッド ５……インナーリード、6,13……細線 ６′……絶縁被覆、７……キャピラリー ８……クランパー、９……ガイドロール 10……案内穴、11……ボール 12……ボンディング部（第１） 14……第１層被覆、15……第２層被覆
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木村 正生 神奈川県川崎市中原区井田1618 新日本 製鐵株式会社第一技術研究所内 (72)発明者 小野寺 清 埼玉県鳩ケ谷市南３―18―36 日本テキ サス・インスツルメンツ株式会社内 (56)参考文献 特開 平１−251727（ＪＰ，Ａ) 特開 平２−39547（ＪＰ，Ａ) 特開 平２−266541（ＪＰ，Ａ) 特開 平２−134838（ＪＰ，Ａ) 特開 平１−200514（ＪＰ，Ａ) 特開 平２−263447（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/60 301

Claims (3)

    (57)【特許請求の範囲】
  1. 【請求項１】金属細線の表面に、芳香族ポリエステル樹
    脂、ポリカーボネート樹脂の少なくとも１種からなる第
    １の被覆層と、その上にポリウレタン、ポリエステルイ
    ミドおよびポリイミドの少なくとも１種からなる第２の
    被覆層を設けたことを特徴とする半導体用ボンディング
    細線。
  2. 【請求項２】第２の被覆層が、ポリウレタン、ポリエス
    テルイミドおよびポリイミドの少なくとも１種からなる
    層を多層積層してなる請求項１記載の半導体ボンディン
    グ細線。
  3. 【請求項３】第１の被覆層の厚みが0.1〜1.2μｍ、第２
    の被覆層の厚みが0.1〜1.0μｍであり、かつ第１の被覆
    層と第２の被覆層の合計厚みが0.3〜1.6μｍである請求
    項１記載の半導体用ボンディング細線。
JP2068423A 1990-03-20 1990-03-20 半導体用ボンディング細線 Expired - Lifetime JP2766369B2 (ja)

Priority Applications (2)

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JP2068423A JP2766369B2 (ja) 1990-03-20 1990-03-20 半導体用ボンディング細線
US08/440,177 US5554443A (en) 1990-03-20 1995-05-12 Bonding wire with heat and abrasion resistant coating layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2068423A JP2766369B2 (ja) 1990-03-20 1990-03-20 半導体用ボンディング細線

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Publication Number Publication Date
JPH03270142A JPH03270142A (ja) 1991-12-02
JP2766369B2 true JP2766369B2 (ja) 1998-06-18

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040124545A1 (en) * 1996-12-09 2004-07-01 Daniel Wang High density integrated circuits and the method of packaging the same
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
US6894398B2 (en) * 2001-03-30 2005-05-17 Intel Corporation Insulated bond wire assembly for integrated circuits
US20040119172A1 (en) * 2002-12-18 2004-06-24 Downey Susan H. Packaged IC using insulated wire
KR100762873B1 (ko) * 2003-06-10 2007-10-08 주식회사 하이닉스반도체 내부 전압 발생기
DE102004043020B3 (de) * 2004-09-06 2006-04-27 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Bonddraht und Bondverbindung

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523820A (en) * 1966-04-18 1970-08-11 Schenectady Chemical Electrical conductor coated with high temperature insulating varnishes
CA1055794A (en) * 1974-01-12 1979-06-05 Sumitomo Electric Industries, Ltd. Enameled wires
US4342814A (en) * 1978-12-12 1982-08-03 The Fujikura Cable Works, Ltd. Heat-resistant electrically insulated wires and a method for preparing the same
US4331800A (en) * 1979-05-02 1982-05-25 Teijin Limited Process for producing aromatic polyesters having an increased degree of polymerization
US4459383A (en) * 1980-07-25 1984-07-10 General Electric Company Polyamide-imide resin compositions and electrical conductors insulated therewith
US4379807A (en) * 1981-03-13 1983-04-12 Rea Magnet Wire Co., Inc. Magnet wire for hermetic motors
JPS5863142A (ja) * 1981-10-12 1983-04-14 Toshiba Corp ボンデイズグワイヤおよびボンデイング方法
US4420535A (en) * 1981-10-14 1983-12-13 Schenectady Chemicals, Inc. Bondable polyamide
US4505978A (en) * 1982-09-28 1985-03-19 Schenectady Chemicals, Inc. Bondable polyamide
US4537804A (en) * 1982-05-05 1985-08-27 General Electric Company Corona-resistant wire enamel compositions and conductors insulated therewith
US4503124A (en) * 1982-05-05 1985-03-05 General Electric Company Corona-resistant wire enamel compositions and conductors insulated therewith
DE3517753A1 (de) * 1985-05-17 1986-11-20 Dr. Beck & Co Ag, 2000 Hamburg Hitzehaertbarer schmelzklebelack und seine verwendung
JP2627148B2 (ja) * 1987-06-30 1997-07-02 一郎 末松 静電複写機によって複写された複写紙のカラー着色方法
JPS6414580A (en) * 1987-07-06 1989-01-18 Matsushita Refrigeration Vegetable storage container
JP2530667B2 (ja) * 1987-11-05 1996-09-04 株式会社フジクラ 耐熱性電線，ケ―ブル
JPH01251727A (ja) * 1988-03-31 1989-10-06 Mitsubishi Metal Corp 半導体等の素子用ボンディングワイヤ
JP2651205B2 (ja) * 1988-07-29 1997-09-10 株式会社日立製作所 半導体装置の製造方法およびそれによって得られる半導体装置
JP2796343B2 (ja) * 1989-04-07 1998-09-10 株式会社日立製作所 半導体装置又は半導体集積回路装置及びその製造方法
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
US4942105A (en) * 1989-01-03 1990-07-17 Xerox Corporation Electrostatographic imaging system
US5396104A (en) * 1989-03-28 1995-03-07 Nippon Steel Corporation Resin coated bonding wire, method of manufacturing the same, and semiconductor device

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US5554443A (en) 1996-09-10
JPH03270142A (ja) 1991-12-02

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