JP2762858B2 - Microwave IC - Google Patents

Microwave IC

Info

Publication number
JP2762858B2
JP2762858B2 JP21587292A JP21587292A JP2762858B2 JP 2762858 B2 JP2762858 B2 JP 2762858B2 JP 21587292 A JP21587292 A JP 21587292A JP 21587292 A JP21587292 A JP 21587292A JP 2762858 B2 JP2762858 B2 JP 2762858B2
Authority
JP
Japan
Prior art keywords
microwave
capacitor
pad
mmic
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21587292A
Other languages
Japanese (ja)
Other versions
JPH0669413A (en
Inventor
昇 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP21587292A priority Critical patent/JP2762858B2/en
Publication of JPH0669413A publication Critical patent/JPH0669413A/en
Application granted granted Critical
Publication of JP2762858B2 publication Critical patent/JP2762858B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Waveguide Connection Structure (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、マイクロ波ＩＣに関
し、特にミリ波帯などで使用されるマイクロ波ＩＣにお
けるモノリシックマイクロ波ＩＣのＤＣインターフェー
スに用いる配線方法を改良したマイクロ波ＩＣに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave IC, and more particularly to a microwave IC having an improved wiring method used for a DC interface of a monolithic microwave IC in a microwave IC used in a millimeter wave band or the like.

【０００２】[0002]

【従来の技術】従来のマイクロ波ＩＣは図２に示すよう
に、マイクロ波ＩＣ６で使用するモノリシックマイクロ
波ＩＣ（以下ＭＭＩＣという）３のＤＣインターフェー
スはＤＣパッド４からＭＭＩＣ３の近傍に配置されたコ
ンデンサ２へワイヤ５で結ばれ、そこからＭＭＩＣ自体
の端子（図示せず）へとつながれている。この場合にＭ
ＭＩＣ３の高さｈ１とコンデンサｈ３は同じ高さであっ
た。2. Description of the Related Art As shown in FIG. 2, a conventional microwave IC has a DC interface of a monolithic microwave IC (hereinafter referred to as "MMIC") 3 used in a microwave IC 6, and a capacitor arranged between a DC pad 4 and the vicinity of the MMIC 3. 2 is connected by a wire 5 to a terminal (not shown) of the MMIC itself. In this case M
The height h1 of the MIC3 and the capacitor h3 were the same.

【０００３】[0003]

【発明が解決しようとする課題】この従来のＭＭＩＣの
パッドから直接コンデンサにワイヤでつなぐ方法ではＭ
ＭＩＣ上のＤＣパッドの位置とコンデンサの配置の自由
度が小さく、かつ、前述の高さｈ１とｈ３が同一の高さ
なので、コンデンサ等の配置によってはどうしてもワイ
ヤが長くなりスペースをとってしまうなどの欠点があっ
た。特にミリ波帯等の高周波で使用するマイクロ波ＩＣ
では、パッケージの大きさでカットオフ周波数特性が決
定されるので、ワイヤを出来るだけ短くすることは、省
スペース化をはかることとともに重要な課題である。In the conventional method of connecting a wire directly from a pad of an MMIC to a capacitor, M
Since the position of the DC pad on the MIC and the degree of freedom of the arrangement of the capacitor are small, and the heights h1 and h3 are the same, the wires are inevitably long depending on the arrangement of the capacitor and the like, and the space is taken up. There were drawbacks. In particular, microwave ICs used at high frequencies such as the millimeter wave band
Then, since the cut-off frequency characteristic is determined by the size of the package, shortening the wire as much as possible is an important issue as well as saving space.

【０００４】[0004]

【課題を解決するための手段】本発明のマイクロ波ＩＣ
はモノリシックマイクロ波ＩＣ用のＤＣインターフェー
スとなるＤＣパッドとマイクロ波ＩＣ本体上のコンデン
サとの間の接続において、前記コンデンサの高さを前記
モノリシックマイクロ波ＩＣの高さよりわずかに高く
し、平板上の端子と短いワイヤでコンデンサとＤＣパッ
ドとの間を接続する。SUMMARY OF THE INVENTION A microwave IC according to the present invention.
In the connection between the DC pad serving as the DC interface for the monolithic microwave IC and the capacitor on the microwave IC body, the height of the capacitor is slightly higher than the height of the monolithic microwave IC, and Connect between the capacitor and the DC pad with a terminal and a short wire.

【０００５】[0005]

【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例の斜視図である。図１に示
すように、コンデンサ２の高さｈ２はＭＭＩＣ３の高さ
ｈ１より高くし、平板状の端子１をＭＭＩＣ３のＤＣパ
ッド４とコンデンサ２との間を接続しやすい位置にくる
ように、かつ、最短距離で取り付ける。したがってＭＭ
ＩＣ３の中央部にＤＣパッド４が配置されていても、短
いワイヤ５で接続でき、またコンデンサ２も従来より自
由な位置に配置できる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of one embodiment of the present invention. As shown in FIG. 1, the height h2 of the capacitor 2 is higher than the height h1 of the MMIC 3, and the flat terminal 1 is located at a position where it is easy to connect between the DC pad 4 of the MMIC 3 and the capacitor 2. And install it at the shortest distance. Therefore MM
Even if the DC pad 4 is arranged at the center of the IC 3, it can be connected with the short wire 5, and the capacitor 2 can be arranged at a more free position than before.

【０００６】[0006]

【発明の効果】以上説明したように本発明は、ＭＭＩＣ
より高さの高いコンデンサに端子を取り付けることによ
り、ＭＭＩＣのＤＣパッドとの接続を容易にすることに
より、省スペースと高周波特性を良好にできる効果があ
る。また、ＭＭＩＣのパッド及びコンデンサの配置の自
由度を大きくするという効果も有する。As described above, the present invention provides an MMIC.
Attachment of the terminal to a taller capacitor facilitates connection with the DC pad of the MMIC, which has the effect of saving space and improving high-frequency characteristics. Also, there is an effect that the degree of freedom of arrangement of pads and capacitors of the MMIC is increased.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施例の斜視図である。FIG. 1 is a perspective view of one embodiment of the present invention.

【図２】従来のマイクロ波ＩＣの斜視図である。FIG. 2 is a perspective view of a conventional microwave IC.

【符号の説明】[Explanation of symbols]

１ 端子 ２ コンデンサ ３ モノリシックマイクロ波ＩＣ（ＭＭＩＣ） ４ ＤＣパッド ５ ワイヤ ６ マイクロ波ＩＣ 1 Terminal 2 Capacitor 3 Monolithic Microwave IC (MMIC) 4 DC Pad 5 Wire 6 Microwave IC

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 モノリシックマイクロ波ＩＣ用のＤＣイ
ンターフェースとなるＤＣパッドとマイクロ波ＩＣ本体
上のコンデンサとの間の接続において、前記コンデンサ
の高さを前記モノリシックマイクロ波ＩＣの高さよりわ
ずかに高くし、平板上の端子と短いワイヤでコンデンサ
とＤＣパッドとの間を接続することを特徴とするマイク
ロ波ＩＣ。In a connection between a DC pad serving as a DC interface for a monolithic microwave IC and a capacitor on a microwave IC body, the height of the capacitor is made slightly higher than the height of the monolithic microwave IC. A microwave IC wherein a terminal on a flat plate and a short wire connect between a capacitor and a DC pad.
JP21587292A 1992-08-13 1992-08-13 Microwave IC Expired - Lifetime JP2762858B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21587292A JP2762858B2 (en) 1992-08-13 1992-08-13 Microwave IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21587292A JP2762858B2 (en) 1992-08-13 1992-08-13 Microwave IC

Publications (2)

Publication Number Publication Date
JPH0669413A JPH0669413A (en) 1994-03-11
JP2762858B2 true JP2762858B2 (en) 1998-06-04

Family

ID=16679663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21587292A Expired - Lifetime JP2762858B2 (en) 1992-08-13 1992-08-13 Microwave IC

Country Status (1)

Country Link
JP (1) JP2762858B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303467A (en) * 1997-04-28 1998-11-13 Rohm Co Ltd Multichip module

Also Published As

Publication number Publication date
JPH0669413A (en) 1994-03-11

Similar Documents

Publication Publication Date Title
US6087720A (en) Integrated circuit package electrical enhancement
JPS61117858A (en) Semiconductor device
JP2762858B2 (en) Microwave IC
JP2728322B2 (en) Semiconductor device
JP2520511B2 (en) High frequency semiconductor device
US5161000A (en) High-frequency thick-film semiconductor circuit
JPH09213868A (en) Lead frame for microwave semiconductor integrated circuit
JP2506783Y2 (en) Semiconductor device
JP2604506B2 (en) Container for semiconductor device
JPS6233326Y2 (en)
JPH01143502A (en) Microwave integrated circuit
JPH05211279A (en) Hybrid integrated circuit
JP3494550B2 (en) Semiconductor device
JPH0621319A (en) Lead frame for semiconductor device
JPS6399566A (en) Hybrid integrated circuit characterized by high frequency and high output power
JP2933793B2 (en) Multi-chip module
JPH0243761A (en) Microwave monolithic integrated circuit device
JPS63174342A (en) Envelope for high-frequency semiconductor
JPH06169047A (en) Semiconductor device
JPH0652156U (en) High frequency IC lead frame
JPS5840339B2 (en) high frequency transistor
JP2001127096A (en) Semiconductor device and its manufacturing method
JPH01108745A (en) Semiconductor device
JPH04109659A (en) Package for semiconductor device
JPS59132149A (en) Ultrahigh frequency transistor device

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19980224