JPH06169047A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH06169047A JPH06169047A JP4345406A JP34540692A JPH06169047A JP H06169047 A JPH06169047 A JP H06169047A JP 4345406 A JP4345406 A JP 4345406A JP 34540692 A JP34540692 A JP 34540692A JP H06169047 A JPH06169047 A JP H06169047A
- Authority
- JP
- Japan
- Prior art keywords
- electrode lead
- lead
- semiconductor device
- die pad
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体装置に関し、特
に樹脂封止パッケージを用いたマイクロ波半導体素子に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a microwave semiconductor element using a resin-sealed package.
【０００２】[0002]
【従来の技術】図４は従来のマイクロ波半導体装置の一
例を示す内部斜視図であり、小型フラットパッケージを
使用したものである。同図において、マイクロ波半導体
素子１は、ダイパッド３に連なる接地用電極リードと、
複数の信号用電極リードとを一体に有するリードフレー
ムの、上記接地用電極パッドに連なるダイパッド３上
に、例えば半田付けによりダイボンドして装着され、か
つ該マイクロ波半導体素子１表面のパッドは、接地用電
極リード４及び信号用電極リード５と、ボンディングワ
イヤ２によりボンディング接続され、該マイクロ波半導
体素子１を上記ダイパッド３および上記ボンディングワ
イヤ２を含めて樹脂６により封止した後に、上記接地用
電極リード４および信号用電極リード５をそれらのリー
ドフレーム（フレーム部分は図示せず）との接続部の手
前で切断し、これにより各リード間を電気的に分離した
のち、上記上記接地用電極リード４および信号用電極リ
ード５を折り曲げ成形して図４に示される半導体装置を
得ている。2. Description of the Related Art FIG. 4 is an internal perspective view showing an example of a conventional microwave semiconductor device, which uses a small flat package. In the figure, the microwave semiconductor device 1 includes a ground electrode lead connected to the die pad 3,
A lead frame integrally having a plurality of signal electrode leads is die-bonded and mounted on the die pad 3 connected to the ground electrode pad, for example, by soldering, and the pad on the surface of the microwave semiconductor element 1 is grounded. The microwave electrode 1 is bonded to the signal electrode lead 4 and the signal electrode lead 5 by the bonding wire 2, and the microwave semiconductor element 1 is sealed with the resin 6 including the die pad 3 and the bonding wire 2, and then the ground electrode is used. The lead 4 and the signal electrode lead 5 are cut in front of the connecting portion with their lead frame (the frame portion is not shown), thereby electrically separating the respective leads, and then the above-mentioned ground electrode lead. 4 and the signal electrode lead 5 are formed by bending to obtain the semiconductor device shown in FIG.
【０００３】そして、上記のようにして得られるマイク
ロ波半導体装置をマイクロ波回路（図示せず）に実装す
る場合には、接地用電極リード４は上記マイクロ波回路
の接地線路に接続され、信号用電極リード５は信号線路
に接続される。When the microwave semiconductor device obtained as described above is mounted in a microwave circuit (not shown), the ground electrode lead 4 is connected to the ground line of the microwave circuit, and The electrode lead 5 is connected to the signal line.
【０００４】[0004]
【発明が解決しようとする課題】従来のマイクロ波半導
体装置は上記のように構成されているので、これをマイ
クロ波回路に実装した場合、該マイクロ波半導体装置か
らの電波輻射が生じたり、またマイクロ波半導体素子に
近接して他のマイクロ波回路基板等がある場合には、そ
の回路の接地線路や信号線路の影響を受け、マイクロ波
半導体素子の特性が変動したり、あるいは異常発振を引
き起こしたりすることがあるなどの問題があった。Since the conventional microwave semiconductor device is constructed as described above, when it is mounted in a microwave circuit, radio wave radiation from the microwave semiconductor device may occur, or If there is another microwave circuit board, etc. in the vicinity of the microwave semiconductor element, the characteristics of the microwave semiconductor element may be changed or abnormal oscillation may occur due to the influence of the ground line or signal line of the circuit. There was a problem such as sometimes.
【０００５】この発明は上記のような問題点を解消する
ためになされたもので、樹脂封止パッケージを用いたマ
イクロ波半導体装置の電波輻射を防止することができ、
かつ動作安定性を高めた、即ち実装環境の影響を受けず
に安定に動作することのできるマイクロ波半導体装置を
得ることを目的とする。The present invention has been made to solve the above problems, and can prevent the radio wave radiation of the microwave semiconductor device using the resin-sealed package.
Another object of the present invention is to obtain a microwave semiconductor device having improved operation stability, that is, capable of operating stably without being affected by the mounting environment.
【０００６】[0006]
【課題を解決するための手段】この発明にかかる半導体
装置は、接地用電極リードに連なるリードフレームのダ
イパッド上に半導体チップをダイボンドし、該半導体チ
ップのパッドと上記信号用リードとをワイヤボンディン
グし、該半導体チップを樹脂封止した後、上記接地用電
極リードおよび上記信号用電極リードを、上記リードフ
レームとの接続部の手前の部分で切断して該各リード間
を電気的に分離してなる構造において、上記接地用電極
リードおよび上記信号用電極リードを上記リードフレー
ムから切断したのち、該各リードを、上記半導体チップ
の上記ダイパッド側を上側として下側に折り曲げ成形し
たものである。また、上記信号用電極リードを、上記ダ
イパッドに連なる接地用電極リードと直交する方向に形
成したものである。In a semiconductor device according to the present invention, a semiconductor chip is die-bonded on a die pad of a lead frame connected to a ground electrode lead, and the pad of the semiconductor chip and the signal lead are wire-bonded. After the semiconductor chip is resin-sealed, the ground electrode lead and the signal electrode lead are cut at a portion in front of a connecting portion with the lead frame to electrically separate the leads. In this structure, the ground electrode lead and the signal electrode lead are cut from the lead frame, and then the leads are bent downward with the die pad side of the semiconductor chip as the upper side. Further, the signal electrode lead is formed in a direction orthogonal to the ground electrode lead connected to the die pad.
【０００７】[0007]
【作用】この発明のマイクロ波半導体装置においては、
マイクロ波回路基板に実装した場合、該回路基板に対向
した面が半導体素子面（半導体素子の上面）となり、該
マイクロ波半導体素子の実装時の上側の面は接地に接続
されたダイパッドにより覆われるため、外部の影響を受
けることなく、上記半導体素子の安定動作が可能とな
る。また、上記半導体素子の電波輻射もダイパッドによ
るシールド効果で大幅に減少する。In the microwave semiconductor device of the present invention,
When mounted on a microwave circuit board, the surface facing the circuit board serves as the semiconductor element surface (the upper surface of the semiconductor element), and the upper surface when mounting the microwave semiconductor element is covered with a die pad connected to ground. Therefore, stable operation of the semiconductor element is possible without being affected by the outside. Further, the radio wave radiation of the semiconductor element is also greatly reduced by the shield effect of the die pad.
【０００８】[0008]
実施例１．図１はこの発明の実施例１によるマイクロ波
半導体装置を示し、小型フラットパッケージを使用した
ものを示す断面図である。図１において、マイクロ波半
導体素子１はダイパッド３に装着され、該ダイパッド３
に連なる接地用電極リード４、及び信号用電極リード５
は、半導体素子１の上面に形成されたパッド（図示せ
ず）とボンディングワイヤ２により接続されている。そ
して、マイクロ波半導体素子１を上記ダイパッド３およ
び上記ボンディングワイヤ２を含めて樹脂６により封止
した後に、上記接地用電極リード４および信号用電極リ
ード５をそれらのリードフレーム（フレーム部分は図示
せず）との接続部の手前で切断し、これにより各リード
間を電気的に分離したのち、上記接地用電極リード４お
よび信号用電極リード５は、半導体素子１の素子面がパ
ッケージの底面に対向するよう、上記ダイパッド３側を
上側として、下側に折り曲げリード成形されている。な
お、本実施例１の接地用電極リード４および信号用電極
リード５の配置は、図４の従来例の半導体装置のそれと
ほぼ同じである。Example 1. 1 is a sectional view showing a microwave semiconductor device according to a first embodiment of the present invention, which uses a small flat package. In FIG. 1, the microwave semiconductor device 1 is mounted on a die pad 3 and the die pad 3
Grounding electrode lead 4 and signal electrode lead 5 connected to
Are connected to pads (not shown) formed on the upper surface of the semiconductor element 1 by bonding wires 2. After the microwave semiconductor element 1 including the die pad 3 and the bonding wire 2 is sealed with resin 6, the ground electrode lead 4 and the signal electrode lead 5 are connected to their lead frames (the frame portion is not shown). No.) is cut off before the connecting portion, and the leads are electrically separated from each other by this, and then the grounding electrode lead 4 and the signal electrode lead 5 have the device surface of the semiconductor device 1 on the bottom surface of the package. The die pad 3 side is the upper side so as to face each other, and the lead pad is bent downward. The arrangement of the ground electrode lead 4 and the signal electrode lead 5 of the first embodiment is almost the same as that of the conventional semiconductor device of FIG.
【０００９】本実施例１の特徴は、接地用電極リード４
に接続されているダイパッド３により半導体素子１が覆
われている点である。従って、この実施例１によるマイ
クロ波半導体装置をマイクロ波回路基板上に実装した場
合、該回路基板とパッケージ中のダイパッド３間に半導
体素子１が存在する構造となり、該ダイパッド３により
電波シールドを実現することができる。したがって、マ
イクロ波半導体素子１に近接して他のマイクロ波回路基
板等がある場合にも、その回路の接地線路や信号線路の
影響を受け、マイクロ波半導体素子１の特性が変動した
り、あるいは異常発振を引き起こしたりすることがきわ
めて少なくなる。The feature of the first embodiment is that the grounding electrode lead 4 is used.
That is, the semiconductor element 1 is covered with the die pad 3 connected to. Therefore, when the microwave semiconductor device according to the first embodiment is mounted on a microwave circuit board, the semiconductor element 1 exists between the circuit board and the die pad 3 in the package, and the die pad 3 realizes a radio wave shield. can do. Therefore, even when there is another microwave circuit board or the like in the vicinity of the microwave semiconductor element 1, the characteristics of the microwave semiconductor element 1 may change due to the influence of the ground line or signal line of the circuit, or It causes extremely few abnormal oscillations.
【００１０】実施例２．図２はこの発明の第２の実施例
によるマイクロ波半導体装置を示す斜視図、図３はその
断面図である。この第２の実施例では、マイクロ波半導
体素子１を接地用電極リード４に連なるダイパッド３に
装着し、接地用電極リード４と直角方向に信号用電極リ
ード５を設け、上記第１の実施例と同様に、半導体素子
１の素子面がパッケージの底面となるように上記ダイパ
ッド３を上側として各々のリード４，５を下側に折り曲
げ成形している。Embodiment 2. 2 is a perspective view showing a microwave semiconductor device according to a second embodiment of the present invention, and FIG. 3 is a sectional view thereof. In the second embodiment, the microwave semiconductor element 1 is mounted on the die pad 3 connected to the grounding electrode lead 4 and the signal electrode lead 5 is provided in the direction perpendicular to the grounding electrode lead 4, and the first embodiment is used. Similarly, the leads 4 and 5 are bent and shaped downward with the die pad 3 above so that the element surface of the semiconductor element 1 becomes the bottom surface of the package.
【００１１】この第２の実施例によるマイクロ波半導体
装置をマイクロ波回路に実装した場合には、電極幅を大
きくして接地を強化した接地用電極リード４に連なるダ
イパッド３により、上記半導体素子１の電波シールド
を、第１の実施例に比しより有効に行うことができる。When the microwave semiconductor device according to the second embodiment is mounted in a microwave circuit, the semiconductor element 1 is formed by the die pad 3 connected to the grounding electrode lead 4 whose electrode width is increased to strengthen the grounding. The radio wave shielding can be more effectively performed as compared with the first embodiment.
【００１２】[0012]
【発明の効果】以上のように、この発明にかかる半導体
装置によれば、接地用電極リードと信号用電極リードの
リード成形方向を、回路基板への実装時に半導体素子が
ダイパッドで覆われるような方向としたので、電波シー
ルドの効果を大きく高めることができる。これにより、
実装環境の影響を受けにくく、安定な動作の得られるマ
イクロ波半導体装置を得られる効果がある。As described above, according to the semiconductor device of the present invention, the lead molding directions of the ground electrode lead and the signal electrode lead are such that the semiconductor element is covered with the die pad when mounted on the circuit board. Since the direction is set, the effect of the radio wave shield can be greatly enhanced. This allows
There is an effect that it is possible to obtain a microwave semiconductor device that is not easily affected by the mounting environment and can obtain stable operation.
【図１】この発明の実施例１によるマイクロ波半導体装
置を示す断面図。FIG. 1 is a sectional view showing a microwave semiconductor device according to a first embodiment of the present invention.
【図２】この発明の実施例２によるマイクロ波半導体装
置を示す斜視図。FIG. 2 is a perspective view showing a microwave semiconductor device according to a second embodiment of the present invention.
【図３】図２のマイクロ波半導体装置の断面図。3 is a cross-sectional view of the microwave semiconductor device of FIG.
【図４】従来のマイクロ波半導体装置を示す内部斜視
図。FIG. 4 is an internal perspective view showing a conventional microwave semiconductor device.
１ マイクロ波半導体素子 ２ ボンディングワイヤ ３ ダイパッド ４ 接地用電極リード ５ 信号用電極リード ６ 樹脂 1 Microwave Semiconductor Element 2 Bonding Wire 3 Die Pad 4 Grounding Electrode Lead 5 Signal Electrode Lead 6 Resin
Claims (2)
と、複数の信号用電極リードとを一体に有するリードフ
レームの上記ダイパッド上に半導体チップをダイボンド
し、該半導体チップのパッドと上記信号用リードとをボ
ンディングし、該半導体チップを樹脂封止した後、上記
接地用電極リードおよび上記信号用リードを上記リード
フレームとの接続部の手前の部分で切断して該各リード
間を電気的に分離してなる構造の半導体装置において、 上記接地用電極リードおよび上記信号用電極リードを、
上記リードフレームから切断したのち、上記接地用電極
リードおよび上記信号用電極リードを、上記半導体チッ
プの上記ダイパッド側を上側として下側に折り曲げ成形
してなることを特徴とする半導体装置。1. A semiconductor chip is die-bonded onto the die pad of a lead frame integrally having a grounding electrode lead connected to the die pad and a plurality of signal electrode leads, and the pad of the semiconductor chip and the signal lead are connected to each other. After bonding and sealing the semiconductor chip with resin, the grounding electrode lead and the signal lead are cut at a portion before the connecting portion with the lead frame to electrically separate the leads. In the semiconductor device having the structure described above, the ground electrode lead and the signal electrode lead are
After cutting from the lead frame, the grounding electrode lead and the signal electrode lead are formed by bending the semiconductor chip downward with the die pad side of the semiconductor chip as the upper side.
用電極リードと直交する方向に設けられたものであるこ
とを特徴とする半導体装置。2. The semiconductor device according to claim 1, wherein the signal electrode lead is provided in a direction orthogonal to a ground electrode lead connected to the die pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4345406A JPH06169047A (en) | 1992-11-30 | 1992-11-30 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4345406A JPH06169047A (en) | 1992-11-30 | 1992-11-30 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06169047A true JPH06169047A (en) | 1994-06-14 |
Family
ID=18376383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4345406A Pending JPH06169047A (en) | 1992-11-30 | 1992-11-30 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06169047A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0827200A1 (en) * | 1996-08-30 | 1998-03-04 | TEMIC TELEFUNKEN microelectronic GmbH | Arrangement for shielding a microelectronic circuit of an integrated circuit |
| US20100126764A1 (en) * | 2008-11-24 | 2010-05-27 | Seagate Technology, Llc | die ground lead |
-
1992
- 1992-11-30 JP JP4345406A patent/JPH06169047A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0827200A1 (en) * | 1996-08-30 | 1998-03-04 | TEMIC TELEFUNKEN microelectronic GmbH | Arrangement for shielding a microelectronic circuit of an integrated circuit |
| US20100126764A1 (en) * | 2008-11-24 | 2010-05-27 | Seagate Technology, Llc | die ground lead |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5057805A (en) | Microwave semiconductor device | |
| JPH06209054A (en) | Semiconductor device | |
| US6396129B1 (en) | Leadframe with dot array of silver-plated regions on die pad for use in exposed-pad semiconductor package | |
| US6781223B2 (en) | Semiconductor device having a signal lead exposed on the undersurface of a sealing resin with an air gap between the signal lead and a mounting substrate | |
| JP2002134685A (en) | Integrated circuit device | |
| JP2902919B2 (en) | Surface mount type semiconductor device | |
| KR100379089B1 (en) | leadframe and semiconductor package using it | |
| JPH06169047A (en) | Semiconductor device | |
| JP2902918B2 (en) | Surface mount type semiconductor device | |
| JP2524482B2 (en) | QFP structure semiconductor device | |
| JP2533012B2 (en) | Surface mount semiconductor device | |
| JP2533011B2 (en) | Surface mount semiconductor device | |
| JPH11340405A (en) | Lead frame, semiconductor device and manufacture thereof | |
| JPH09213868A (en) | Lead frame for microwave semiconductor integrated circuit | |
| JPH04267549A (en) | Resin sealed type semiconductor device | |
| US20230230904A1 (en) | Semiconductor device | |
| JPH0637234A (en) | Semiconductor device | |
| US20240178106A1 (en) | Lead frame apparatus, semiconductor device and method of making a semiconductor device | |
| JPH11260972A (en) | Thin semiconductor device | |
| JPH0621304A (en) | Manufacture of lead frame and semiconductor device | |
| KR100216989B1 (en) | Lead frame of two chip package | |
| JP2906753B2 (en) | Lead frame | |
| KR100567045B1 (en) | A package | |
| KR20000034120A (en) | Multi-chip package of loc type and method for manufacturing multi-chip package | |
| JPH05291345A (en) | Semiconductor device |