JP2756530B2 - Light irradiation method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention
Irradiates only the area near the surface with light annealing
The present invention relates to a method of irradiating light. [0002] 2. Description of the Related Art Adding hydrogen and the like to a non-single-crystal semiconductor
The technique of neutralizing the recombination center by
It is described in JP-A-58-25281. Also, non
Technology to promote crystallization of single crystal semiconductors by optical annealing
The technique is described in, for example, JP-A-57-53886,
JP-A-56-23784, JP-A-56-81981
And JP-A-57-99729, respectively.
ing. [0003] However, the above-mentioned publication discloses
Annealing techniques shown include optical annealing including infrared light
It is. Infrared light has a longer wavelength than ultraviolet light.
Therefore, even if the light is focused by the lens, the light interferes with each other and scatters.
Disturb. Therefore, optical annealing containing infrared light is not
Desirable thickness of single crystal semiconductor, especially less than 1000mm thickness
Cannot promote crystallization of semiconductors alone
Was. Laser light is used for optical annealing including infrared light.
By Q switch oscillation pulse used or continuous
Scanning oscillated laser light with a rotating mirror
Etc. And light irradiation by light annealing including infrared light.
Radiation is known to promote crystallization of non-single-crystal semiconductors.
ing. [0004] However, the laser annealing described above is performed in a circular series.
It consists of a continuous spotlight and a spotlight
If there is a gap between the pot light and the overlapping part
Either you can. Therefore, the circular
Laser annealing with cut light makes uniform crystallization difficult.
there were. In addition, laser annealing including infrared light
Prevents recombination centers in non-single-crystal semiconductors from being generated by the heat of light
Degas the stopping hydrogen. In particular, the circular spot light
Laser anneal produces infrared light at the light overlap
Heat is generated, and the degassing of hydrogen is severe.
Have. Further, the I layer, which is the active region, has a light absorption coefficient
It is necessary to increase the light conversion efficiency by increasing the size. But red
Since external light penetrates deep into the non-single-crystal semiconductor,
Crystallinity to the crystalline region and lowers the light absorption coefficient
With a title. [0005] The present invention has been made to solve the above problems.
For excimer laser light only on the surface of the workpiece
Therefore, the object is to provide a light irradiation method for processing.
You. The present invention prevents generation of recombination centers in a non-single-crystal semiconductor.
The aim is to provide a light irradiation method in which the stopping hydrogen is difficult to degas.
Target. The present invention provides a non-single-crystal semiconductor with a desired thickness,
Light irradiation that promotes crystallization by uniform light annealing
The aim is to provide a method. The invention relates to non-single crystal
The vicinity of the junction surface of the semiconductor is crystallized, and the I layer is made to have a high optical absorption.
With the aim of providing a light irradiation method that remains single crystal
I do. The present invention scans the focused linear ultraviolet light
Aim to provide a light irradiation method that improves productivity.
Target. [0006] The light irradiation method of the present invention comprises:
Generates excimer laser of 100nm to 500nm
And an excimer of 100 nm to 500 nm.
Focus the laser on a line with a width of 100μm or 2mm
Optical means, and the linearly focused 100 nm
In the longitudinal direction of the linear irradiation surface of a 500 nm excimer laser
X table that moves from one side to the other in a direction substantially perpendicular to the direction
And an amorphous silicon using an ultraviolet light irradiation device
For the Recon semiconductor layer, formed on the substrate
Amorphous silicon semiconductor layer with added hydrogen
The excimer laser is irradiated only in the X direction,
The movement of the X table
Controlling the amorphous silicon semi-conductor
A depth of 1000 mm or less from the surface of the conductor layer
It is characterized in that Further, the light irradiation method of the present invention
The length of the linear irradiation surface in the longitudinal direction is 18 cm or more
There is a feature. [0007] DETAILED DESCRIPTION OF THE INVENTION For example, a mercury lamp
Generates short ultraviolet light. Caused by an ultra-high pressure mercury lamp
Ultraviolet light, for example, excimer laser light
By CallensFocused, 100nm to 500
Consists of a wavelength of nmIt becomes linear light. on the other hand,amorphous
Semiconductor layerAboveFocusedLinear excimer laser light
Move in a direction substantially perpendicular to the longitudinal directionXOn the table
Placed onXPlaced on the tableAmorphous half
Conductor layerBy ultraviolet light from one end to the other
At a given speed,Irradiation only in the X direction
FaceScanned. Also,the aboveConsists of excimer laser light
Since linear light has a short wavelength,Amorphous semiconductorPart of
This is effective when only heating is desired. further,the aboveEki
Linear light consisting of sima laser light isXOrder by table
The next scan is a wave that crystallizes only to a depth of less than 1000 °
Because the length is selected,Constant depthOnly heated,Amo
Rufus semiconductor layerDegass hydrogen without raising overall temperature
Making it difficult. When the light irradiation method of the present invention is applied,
A description will be given of a method for processing an effective semiconductor device. Was
For example, non-single crystals that can generate electromotive force by light irradiation
The semiconductor is formed by the condensed linear ultraviolet light, for example,
Move in a direction substantially perpendicular to the longitudinal direction of the
Is placed on a moving table. And the non-single crystal half
The conductor is moved by the moving table.
Thus, the condensed excimer laser light is uniformly irradiated.
Thus, the condensed linear excimer laser light is
When scanning the surface of the non-single-crystal semiconductor, the entire surface of the semiconductor is scanned.
By being radiated over, only the vicinity of the surface
Photo-annealed at a certain depth to be more crystallized. The aboveXThe drive of the table
PlaceAnd control equipmentByLinearlyFocused ultraviolet light
ButamorphoussemiconductorlayerSuitable for crystallizing the surface of
It is controlled to an appropriate speed. According to the semiconductor manufacturing apparatus,A
MorphasP layer or N layer near the surface of the semiconductor
Is crystallized to increase conductivity, whereas the P layer
Alternatively, the I layer formed below the N layer is not crystallized.
Therefore, the I layer has a large light absorption coefficient,
Does not lower the power conversion efficiency. Also,By optical means,
Does not contain infrared lightLinearlyFocused ultraviolet light,For example,
Excimer laser lightLight annealing does not generate heat.
No. Therefore, hydrogenamorphousDegas from the semiconductor
hardTherefore, generation of recrystallization centers in the P layer or the N layer
Life is prevented. That is, the P layer or the N layer
Does not containLinearlyFocusedExcimer laserLight by light
The conductivity is not impaired by annealing. Further,amorphousSemiconductors areXTabe
Movement in one direction by the
With simple actions like, Linear by optical meansFocused
WasExcimer laserBy combining with light, only uniform
Can be annealed to the desired thickness,
Improves productivity compared to intermittent laser annealing
Can be done. Light generated by the UV light generator
Is between 100 nm and 50
0nmExcimer laser lightOnly be. Then, said 1
00 nm to 500 nmExcimer laserLight is siri
The light is condensed linearly by the cylindrical lens. Meanwhile, light
Irradiation can generate photovoltaicamorphousSemiconduct
The body is saidLinearlyFocusedExcimer laserlightIn
Irradiated surfaceMove in a direction substantially perpendicular to the longitudinal directionXThe
Placed on the bull. And saidamorphoussemiconductor
IsXBy being moved by the table,Linear
ToFocusedExcimer laserAre uniformly irradiated. As described above,Linearly100 focused
nm to 500 nmExcimer laserThe lightAmorpha
SBy scanning the entire surface of the semiconductor,
Only the side is photo-annealed to be more crystallized. the aboveXTe
Table drive deviceAnd control equipmentBy
WhatLinearlyFocusedExcimer laserThe lightAmorpha
SControlled to an appropriate rate to crystallize the semiconductor surface
It is. As mentioned above,BookThe invention improves conversion efficiency and
Optical annealing can be performed to a desired thickness and
Production compared with laser annealing etc. by intermittent pot light
Performance can be improved. The width of the linearly focused excimer laser light
Is set to 100 μm to 2 mm, so that a non-single-crystal half
To promote crystallization at an appropriate thickness from the conductor surface
Was completed. [0013] [Embodiment] Hereinafter, the present invention will be described with reference to FIGS.
An embodiment of the present invention will be described. FIGS. 1A to 1D show books
In one embodiment of the invention, a longitudinal section showing a manufacturing process of a photoelectric conversion device.
FIG. In FIG. 1, the substrate (1) has an insulating surface treatment.
Metal foil flexible substrate (6), for example, 10-200 μ
m, especially stainless steel foil with a thickness of 20-50 μm.
The resin (7) has a thickness of 0.1 to 3 μm, for example, about 1.5 μm.
Is formed. The substrate (1) is shown in Fig. 1.
With a horizontal length of 60 cm and a width of 20 cm
Was. Also, the first conductive film extends over the entire surface of the substrate (1).
(2) is formed. That is, on the surface of the substrate (1),
Chromium or chromium-based metal film (25) is 0.1
Sputtering method to a thickness of ~ 0.5 μm, especially magnetron DC
It was formed by the putter method. The characteristics of laser scribe processing
The improvement is due to the high reflectivity of the highly reflective metal chromium
Sublimation (laser) with 1-50% by weight of copper or silver added to
Use metal (for light). Using such a sublimable metal
Laser scribes are preferred because they leave no residue after machining.
won. Furthermore, such Cu-Cr (chromium copper alloy), Cr-Ag
(Chromium silver alloy) is 500 nm ~ 7
The reflected light in the wavelength region of 00 nm is about 10% larger,
If light is reflected on the back side of (1),
Was effective. Furthermore, on this metal film (25),
The main component is tin oxide to which halogen elements such as fluorine are added.
Transparent conductive film, such as tin oxide indium (5
0Å to 2000Å, typically 500Å to 1500Å)
Formed by the spray method or the spray method.
The conductive film (2) was used. This first conductive film (2) is a metal film (2
5) Only. However, the metal of the metal film (25) is
To prevent back diffusion in semiconductor
The tin oxide indium blocking layer is very important
Was effective. Further, the tin oxide indium is
The contact with the P-type or N-type semiconductor layer on the upper surface
Excellent film contact and long wavelength of incident light
Substantially due to the reflection of light on the back electrode (first electrode (37))
To improve the reflection effect when increasing the optical path length
It was very effective. Then, the surface of the first conductive film (2)
The output of YAG laser processing machine (manufactured by NEC) is 0.3 ~
3W (focal length 40mm), spot diameter 20-70μm, typical
Is controlled by a microcomputer to 40 μm.
Irradiates the laser light. Then, the laser light is
The first groove (13) for scribe line is formed by scanning
Is done. And, between the first grooves (13), an inter-element region
(31) and (11) are formed, and the first electrode (37) is formed.
Is done. The first groove (1) formed by laser scribe
3) is about 50 μm wide and 20 cm long. In addition, the first
The depth of the groove (13) constitutes the first electrode (37)
As a result, the first conductive film (2) was completely cut and separated. Scratch
And the regions constituting the first element (11) and the second element (31)
Is formed as 5-40 mm, for example, 15 mm
Was. Thereafter, a plastic film is formed on the upper surface of the first conductive film (2).
Zuma CVD, photo CVD, or low pressure plasma CVD
As a result, the non-single-crystal semiconductor layer (3) has a thickness of 0.3 μm to 1.0 μm.
For example, it was formed to a thickness of 0.7 μm. The above non-single crystal semiconductor
The body layer (3) is a PN that generates photovoltaic
Or hydrogen or halogen element with PIN junction added
Have been. A typical example of the non-single-crystal semiconductor layer (3) is a P-type
(SixC_1-x0 <x <1) semiconductor (about 300 mm)-type I
Rufus or semi-amorphous silicon semiconductor (approx.
0.7 μm)-one of N-type crystallites (about 200 mm)
Has a PIN junction. The non-single-crystal semiconductor layer (3)
Type microcrystalline silicon (approximately 300 mm) semiconductor-I type semiconductor-P type fine
Crystallized Si semiconductor-P-type Si_xC_1-x(Approx. 50Å x = 0.2 to 0.
3). The non-single-crystal semiconductor layer (3) has a first conductive property.
A film having a uniform thickness was formed over the entire surface of the film (2). Further, as shown in FIG.
The second groove extends over the left side (first element side) of the 1 groove (13).
The groove (14) is formed by the second laser scribe process.
Was. In this embodiment, the first groove (13) and the second groove (14) are located between the first groove (13) and the second groove (14).
The center is shifted by 50 μm. Thus, the second groove (14)
Exposed the side surfaces (8) and (9) of the first electrode (37). Further
In this embodiment, the light-transmitting conductive film (15) of the first electrode (37) is used.
And only the surface of the metal film (25) may be exposed,
In order to improve the production yield, the laser light is 0.1 ~ 1W
For example, 0.8 w is a little too strong and the depth of this first electrode (37)
Remove all directions. As a result, the first conductive film (2)
Fig. 1 on the side (8) (only the side or the end of the side and top)
The connector (30) with the second electrode (38) shown in FIG.
Also, the contact resistance is generally an oxide-oxide contact (
Tin oxide (tin oxide / indium contact)
In particular, since no insulating barrier is formed at the interface.
There were no abnormalities such as greatness, and there were no practical problems. As shown in FIG. 1C, a non-single crystal half
The metal layer (5) and the connector (3
0) was formed. Furthermore, 500 nm in this embodiment is used.
Emit the following wavelengths (generally 200 nm to 450 nm)
An outline of the optical annealing apparatus and its method will be described with reference to FIG.
I will explain. FIG. 2 shows an embodiment of the present invention.
FIG. The irradiated substrate (60) is shown in FIG.
Placed on an X table (61) that moves in one direction
I have. Substrate on which the first conductive film (2) shown in FIG. 1 is formed
(1) is a substrate to be irradiated in the optical annealing apparatus shown in FIG.
Corresponds to (60). Light source is a bar-shaped ultra-high pressure mercury lamp (54)
With an output of 500 W or more and an emission wavelength of 200 nm to 650 nm.
Was. In particular, in this embodiment, the Toshiba ultra-high pressure mercury lamp (KHM-50,
Output 5kW) was used. That is, the power supply (50) is
Voltage AC200V, 30A and secondary voltage (52) AC4200V, 1.1 ~
1.6A. Further, the extra-high pressure mercury lamp (54)
Heat, due to the heat generated by the substrate to be irradiated (60).
To prevent the generation of nails, apply water outside the ultra-high pressure mercury lamp (54).
It was cooled by feeding (51) and (51 '). Super high pressure
Mercury lamp (54) emits short wavelength light from 300 nm to 450 nm
I do. In addition, 500 nm irradiated from an ultra-high pressure mercury lamp (54)
Light of the above wavelength is cut by the filter (59).
You. Only light with a short wavelength of 300 nm to 450 nm is blocked.
The light was collected by the cylindrical lens (55). Above
Since the high-pressure mercury lamp (54) is composed of a rod with a length of 20 cm,
A cylindrical lens (55) made of quartz was used. Further, the shutter (56) is provided with the short wavelength
Before the light is sufficiently focused, or a cylindrical lens (5
It was placed between 5) and the extra-high pressure mercury lamp (54). Thus,
Short-wavelength light generated by the ultra-high pressure mercury lamp (54) is collected
Linear ultraviolet light (57) with a width of 100 μm to 2 mm and a length of
It became 18 cm. At that time, the focused linear ultraviolet light (57)
Energy density is about 5KW / cm^Two(When the width is 1 mm
). The collected linear ultraviolet light (57) is
The light is focused on the irradiation surface of the irradiation substrate (60). Then, the irradiated group
Since the plate (60) is placed on the X-table (61),
By moving the X table (61) at a constant speed,
Scanning by the focused linear ultraviolet light (57)
become. Thus, the center is between 300 nm and 450 nm
The collected linear ultraviolet light (57) is applied to the non-single-crystal semiconductor layer (3).
Almost absorbed at a depth of less than 1000 mm near the surface
U. For this reason, the non-single-crystal semiconductor layer (3)
A very thin region will be crystallized. In addition
The photo annealing according to the embodiment is a photo annealing not containing infrared light.
Therefore, there is no generation of heat and the hydrogen or hydrogen already contained
It is difficult to degas halogen elements. At the same time, the optical annealing according to this embodiment
Promotes crystallinity near the surface of the non-single-crystal semiconductor layer (3).
You. The vicinity of the surface where the crystallinity is promoted is optically
Crystallization without reducing the mechanical energy
The double that its light absorption coefficient can be reduced
Has features. However, the inside of the I layer, which is the active region,
It is necessary to increase the light absorption coefficient. That is, the activity
Crystalline region is amorphous or has a low degree of crystallinity
It must not be kept in a crystalline state, so-called polycrystallized. vice versa,
Select P-type or N-type or I layer in the vicinity
Selectively reduce the light absorption coefficient, and in addition, rejoin at the joint interface
Crystallized at the joint interface to reduce the density of the joint center
It is important to carry out polycrystallization (33) continuously. this
As a result, UV light of short wavelength can be selected only near the semiconductor surface.
Alternatively, light annealing can be performed. Then, the third laser scribe
The metal film (5) and the non-single-crystal semiconductor layer (3) are cut and separated.
The third groove (20) formed has multiple isolations.
The formed second electrodes (38) and (39) are formed. The metal film (5)
The light-transmitting conductive film (15) (CTF) was used. And that
The thickness of the light-transmitting conductive film (15) is 3003001500Å.
Was. As the translucent conductive film (15), an N-type semiconductor may be used.
Main component is tin oxide indium which has good ohmic contact
The mixture was formed as follows. Further, the transparent conductive film (1
5) is to form oxide indium as the main component
It is also possible. Furthermore, as a translucent conductive film (15)
Is formed from a non-oxide conductive film such as a chromium-silicon compound.
It is also possible to make it. As a result, the second electrode (3
8) and (39) were formed. The translucent conductive film (15) is an electron
Beam evaporation method, sputtering method, photo CVD method, photo
Non-single-crystal semiconductor layer using CVD method including plasma CVD method
Formed at a temperature of 250 ° C or less to prevent (3) from deteriorating
Was. Furthermore, the depth of the third groove (20) is simply the second electrode (3
8), not only removing (39), but also the non-single crystal under it
Removed simultaneously including the polycrystalline region (33) of the semiconductor layer (3).
You. As a result, a part of the first electrode (37) is exposed.
You. In the optical processing according to the present embodiment, the third groove (20) is formed.
When forming, the irradiation intensity of laser scribe (power density)
Degree), part of the second electrodes (38) and (39) remain.
That the two electrodes cannot be electrically separated
I prevented it. The laser light used in the present embodiment is the second electrode
The non-single-crystal semiconductor layer (3) closely contacting the lower surfaces of (38) and (39),
A polycrystalline region (33) with high electrical conductivity of polycrystallization
It was also extruded and removed. The laser light of this embodiment was irradiated.
Insulating the non-single-crystal semiconductor layer (3) in the region
The insulation between the two electrodes (38) and (39) was completed. others
Forming a first electrode (37) under the non-single-crystal semiconductor layer (3)
Translucent conductive film (15) from tin oxide indium
The main component is tin oxide, which has excellent heat resistance.
Leaves the electrode (37) to easily absorb the thermal energy of the laser beam
The non-single-crystal semiconductor layer (3) is used as a material for the second electrodes (38) and (39).
Both are selectively removed to easily form the third groove (20)
I was able to. In addition, the leakage is increased in manufacturing yield.
Ten^-FiveÅ / cm ~ 10^-7準 / cm quasi-defective device (5
% To 10%), then hydrofluoric acid 1: nitric acid
3: The acetic acid 5 is further diluted 5 to 10 times with water, and
Lightly etch only. And this etching is
Chemically removes silicon and low-grade oxide in trenches to a depth of 50 to 200 mm.
In addition, it is removed together with metal impurities such as indium and leaks.
Was effective in reducing the Thus, as shown in FIG.
Number of inter-element regions (11) and (31) are connected in series at the connection (4).
Photoelectric conversion device. Fig. 1 (D) is a book
The photoelectric conversion device of the embodiment is completed. Sand
That is, as a passivation film, a plasma gas phase method or
Silicon nitride film (2
1) has a uniform thickness of 500 to 2000 mm,
-The generation of electric current caused by adsorption of moisture or the like is further prevented. Sa
In addition, the photoelectric conversion device includes external extraction electrodes (24), (24 ').
Was provided on the periphery. In FIG. 1 (D),
For example, on a 60 cm x 20 cm substrate (1), each element has a width of 14.35.
mm x 192 mm, and the width of the connecting part
150 mm, width of external extraction electrode part 10 mm, peripheral part 4 mm
, It is practically 40 steps within 580 mm x 192 mm
Was made. As a result, the segment of the photoelectric conversion element is 1
1.3% (1.05cm^TwoIf the conversion efficiency is
6.6% (theoretically 9.1%, but 40-stage series connection
The effective conversion efficiency decreased due to the resistance (AM1 [100 mw / cm
^Two)), The output power of 68.4 w
Was. Also, this panel, for example 40cm x 40cm or
60cm x 20cm 3 or 4 in series aluminum sash
Assembled in a solid frame or in a flexible frame of carbon black
Packaged by mating, 120cm x 40c
m NEDO standard high power panel can be installed.
is there. Also, for this NEDO standard panel,
On the back of the glass substrate (opposite the irradiated surface)
Attach the upper surface of the photoelectric conversion device of the embodiment, wind pressure, rain, etc.
On the other hand, it is also effective to increase the mechanical strength. Further
Next, specific examples when implementing the present invention will be described. Specific Example 1 Referring to FIGS. 1A to 1D, in this embodiment,
A specific example will be described. That is, a metal having an insulating coating
The substrate made of foil (1) is a stainless steel foil with a thickness of about 50 μm.
Coated to 1.5 μm thickness using polyimide resin on the surface of
I did it. The size of the substrate (1) at that time is 60cm in length and width
It was 20 cm. In addition, gold with an insulating coating
Substrate made of metal foil (1) has copper on it 1.0 to 10 weight
%, For example 2.5% by weight added chromium
Formed to a thickness of 0.1 to 0.2 mm by sputtering.
Was. In addition, SnO_TwoBut spa to 1050mm thickness
It was formed by the tta method. Next, the first groove (13) is
Laser spot diameter 50μm, output 0.5W, microcomputer
0.3 to 3 m / min (average 3 m / min)
Formed at scanning speed. The inter-element regions (11) and (31) are 15
mm width. Thereafter, a known PCVD method and a photo CVD
1 or a photo-plasma CVD method.
Non-single-crystal semiconductor layer (3) having one PIN junction is formed
Was done. The total thickness of the non-single-crystal semiconductor layer (3) is about 0.7
μm. Thereafter, the first groove (13) is
50 μm from the first groove (13)
m at the position shifted toward the first inter-element region (11).
Pot diameter 50 μm, average output 0.5 W, room temperature, frequency 3
Laser scrub at KHz, scanning speed 60cm / min
The second groove (14) was formed by the eve. Then figure
The optical annealing process is performed on the P-type semiconductor layer using the second device.
It was done. Microcrystallized by the optical annealing
The region consisting of the I-type semiconductor layer under the P-type semiconductor layer
Rufas or a silicon semiconductor containing low-grade microcrystalline hydrogen
And left. The region (33) where the crystallinity is promoted is about 800 mm.
In this polycrystalline region (33), the X-text shown in FIG.
-Change the moving speed of the
By applying light, the light annealing can be made deep or shallow.
It became possible to be. The semiconductor thus obtained is divided by 1 /
Remove the insulating oxide on the surface by immersion in 10 hydrogen fluoride
Further, the whole is made of tin oxide / a, which is a light-transmitting conductive film.
Is formed by sputtering, and the average film thickness is
To the second metal film (5) and connector
(30) was configured. Furthermore, the third groove (20) is the same
Next, a laser scribe is used to create a 50 μm line from the second groove (14).
To the first inter-element region (11) side.
Thus, the configuration shown in FIG. At this time, the third groove (2
As shown in the drawing, the depth of the first electrode (3) is
It reached the surface of 7). Therefore, the translucent conductive film (1
5) and the non-single-crystal semiconductor layer (3) have been completely removed.
Was. The laser beam has an average output of 0.5 W, and the other
The conditions were the same as those for forming the groove (14). In the step of FIG.
Then, the end of the panel is connected to the first electrode (37) with a laser light output of 1 W,
Based on all of the non-single-crystal semiconductor layer (3) and the second electrodes (38) and (39)
Scan a rectangle 4 mm inside the edge of the plate (1), and
An electrical short circuit with the frame was prevented. Then, a silicon nitride film (2
1) by PCVD method or photo-plasma CVD method
It was formed at a temperature of 250 ° C. to a thickness of 000 mm. Then 2
For a panel of 0cm x 60cm, the element is 40mm in 15mm width.
I was able to. AM1 (100mw)
/ Cm^Two), The output was 6.7% and the output was 73.8w.
Effective area is 1102cm^Two91.8% of the entire panel
It could be used effectively. Specific Example 2 Stainless steel formed on a 20cm x 60cm substrate (1)
A 30μm thick polyimide resin (7) is coated on the foil.
Is being processed. Furthermore, one photoelectric conversion device for calculators
In the case of 5 cm x 1 cm, the substrate (1)
A photoelectric conversion device can be used. Here in the photoelectric conversion device
One element shape is 9 mm × 9 mm, and a 5-stage continuous array
-. The first electrode (37) is made of a reflective metal chrome / silver (
Silver 1% to 10% by weight, for example 2.5% by weight)
Was. Tin oxide indium is formed by sputtering.
The lower second electrodes (38) and (39) are
Formed. Further, on the upper surface of the first conductive film (2), NI
A non-single-crystal semiconductor layer (3) having a P junction was formed. Sa
Further, by irradiating the light of an ultra-high pressure mercury lamp (54) from the surface,
Non-single-crystal semiconductor layer (3)
The fraction was polycrystallized. Further, the second electrodes (38) and (39)
Tin oxide (1050Å) was formed on the P-type semiconductor. That
Others are the same as the specific example 1. The connection between each element is 100 μm,
Electrodes are the left and right ends of Fig. 1 (A) and (B)
Electrodes (24), (24 ') were provided. Then 250
Was able to make a calculator device at once. 3.8% effective
Test with 500 LX under fluorescent light as a good product with conversion efficiency or higher
did. As a result, a final production yield of 76% can be obtained.
Came. Final production yield of conventional method is 40-50%
And the required area of the connecting part was large.
Considering that this example is extremely effective
I understand. Further, the substrate (1) is a strong pallet of 10 to 15 watts.
Laser cutting using laser light enables automatic cutting
became. In this embodiment, the upper light irradiation side is transparent.
Organic resin for light protection (22), (23), for example, for ultraviolet light irradiation
By overlapping the more hardening resin, the metal layer and the
Structure that sandwiches the photoelectric conversion device between the resin
Flexible, very inexpensive and capable of mass production
became. In the present embodiment, the ultra-high pressure mercury lamp (5
4) was performed. However, this 100 nm to 500 nm
Wavelength light can also be obtained using an excimer laser.
You. [0035] According to the present invention,Wavelength is not 100nm
500nmLinear light consisting of excimer laser light
Because the length is short,Amorphous semiconductor1000 from the surface
の み Only the following depth can be heated. According to the invention
IfOf the above wavelengthLinear light composed of excimer laser light is
X with amorphous semiconductor mountedtableMove
ThatByAmorphous semiconductorTo scan sequentially
Therefore, only a predetermined depth is sequentially heated,Amorphous semiconductor
bodyNever raise the overall temperature at once. Therefore,
Hydrogen formed on the substrate is addedamorphous
Hydrogen is hardly degassed from the surface of the semiconductor layer. According to the present invention
Can generate photovoltaics by light irradiationAmorpha
SIn semiconductors, by optical devices,the aboveFocused linearly
Excimer laser lightIrradiate only in X directionLight annealing
By doingamorphousConnecting only the desired parts of the semiconductor
Can be crystallized andConstant depthOf recombination centers in
You can prevent life. According to the present invention,amorphoussemiconductor
By moving in one direction,the aboveThe light condensed linearly
Kisima laser beamConstant depthOnly by light annealing uniformly
Laser annealing by intermittent spot light
The productivity is improved as compared with the above.

BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1D are longitudinal sectional views showing a manufacturing process of a photoelectric conversion device according to an embodiment of the present invention. FIG. 2 is a conceptual diagram of an optical annealing apparatus according to an embodiment of the present invention. [Description of Signs] 1 ... Substrate 2 ... First conductive film 3 ... Non-single-crystal semiconductor layer 4 ... Connecting portion 5 ... Metal film 6 ... Flexible substrate 7 ... Polyimide resin 8 Side surface 9 of electrode Side surface 10 of electrode Irradiation light 11 First inter-element region 13 First open groove 14 Second open groove 15 ..Transparent conductive film 20... Third groove 21... Silicon nitride films 22 and 23... Transparent protective organic resin 24 and 24 ′. Film 30 connector 31 second element region 33 polycrystalline region 34 region having low crystallinity 37 first electrodes 38 and 39 second electrode 50 Power supply 51, 51 'Water 52 Secondary voltage 53 Mirror 54 Ultra-high pressure mercury lamp 55 Cylindrical lens 56 Shut Target 57: Condensed linear ultraviolet light 59: Filter 60: Irradiated substrate 61: X table

Claims (1)

(57) [the claims] 1.100nm to calling an excimer laser of 500nm
Means for causing produced, the 100nm to width excimer lasers 500nm
Optical means for condensing into a linear shape of 100 μm to 2 mm
Use the the X table to move from one to the direction substantially perpendicular to the other to 100nm not focused on the linear to the longitudinal direction of the linear irradiation surface of an excimer laser of 500 nm, the ultraviolet light irradiation apparatus comprising Amorphous silicon
In the method of irradiating the semiconductor layer with light, the amorphous layer added with hydrogen formed on the substrate
Excimer laser irradiation on silicon semiconductor layer only in X direction
Then, the X table on which the substrate is placed is moved.
A method of irradiating a semiconductor light, characterized in that a polycrystalline silicon is formed at a depth of 1000 ° or less from the surface of the amorphous silicon semiconductor layer under the control of a microcomputer . 2. The length in the longitudinal direction of the linear irradiation surface is 18 cm or more
The light irradiation method according to claim 1, wherein: