JP2744979B2 - Light irradiation method for semiconductor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention illuminates an object to be heated with ultraviolet light.
Irradiates light only in the vicinity of the surface.
Light irradiation of semiconductorMethodIt is about. [0002] 2. Description of the Related Art Adding hydrogen and the like to a non-single-crystal semiconductor
The technique of neutralizing the recombination center by
It is described in JP-A-58-25281. Also, non
Technology to promote crystallization of single crystal semiconductors by optical annealing
The technique is described in, for example, JP-A-57-53886,
JP-A-56-23784, JP-A-56-81981
And JP-A-57-99729, respectively.
ing. [0003] However, the above-mentioned publication discloses
Annealing techniques shown include optical annealing including infrared light
It is. Infrared light has a longer wavelength than ultraviolet light.
Therefore, even if the light is focused by the lens, the light interferes with each other and scatters.
Disturb. Therefore, optical annealing containing infrared light is not
Desirable thickness of single crystal semiconductor, especially less than 1000mm thickness
Cannot promote crystallization of semiconductors alone
Was. Laser light is used for optical annealing including infrared light.
By Q switch oscillation pulse used or continuous
Scanning oscillated laser light with a rotating mirror
Etc. And light irradiation by light annealing including infrared light.
Radiation is known to promote crystallization of non-single-crystal semiconductors.
ing. [0004] However, the laser annealing described above is performed in a circular series.
It consists of a continuous spotlight and a spotlight
If there is a gap between the pot light and the overlapping part
Either you can. Therefore, the circular
Laser annealing with cut light makes uniform crystallization difficult.
there were. In addition, laser annealing including infrared light
Prevents recombination centers in non-single-crystal semiconductors from being generated by the heat of light
Degas the stopping hydrogen. In particular, the circular spot light
Laser anneal produces infrared light at the light overlap
Heat is generated, and the degassing of hydrogen is severe.
Have. Further, the I layer, which is the active region, has a light absorption coefficient
It is necessary to increase the light conversion efficiency by increasing the size. But red
Since external light penetrates deep into the non-single-crystal semiconductor,
Crystallinity to the crystalline region and lowers the light absorption coefficient
With a title. [0005] The present invention has been made to solve the above problems.
Amorphous with hydrogen addedSilico
NA depth of 1000 ° or less from the surface of the semiconductor layer is 100 n
Processing with excimer laser of m to 500 nm
SemiconductorLight irradiationMethodThe purpose is to provide. Departure
Akira is amorphous with hydrogen addedsiliconSemiconduct
Prevents recombination centers from forming when annealing body layers
Hydrogen is hard to degasSemiconductorLight irradiationMethodTo provide
aimed to. The present invention relates to an ammonia-added
Rufussilicon1000 ° or less from the surface of the semiconductor layer
Promotes crystallization by depth and uniform optical annealing
ToSemiconductorLight irradiationMethodThe purpose is to provide. Book
The invention is based on amorphoussiliconHalf
Crystallize to a depth of 1000 ° or less from the surface of the conductor layer,
Light irradiation device with non-single crystal layer with high light absorption
The purpose is to provide. The present invention provides a focused linear
Scan with an excimer laser of 100 to 500 nm
Increase productivitySemiconductorLight irradiationMethodOffer
The purpose is to provide. The invention is based on the addition of hydrogen
Is amorphoussilicon1000 from the surface of the semiconductor layer
の for crystallization to below depthSemiconductorLight irradiation method
The purpose is to provide. [0006] Means for Solving the Problems The present inventionOf semiconductors in
Light irradiationMethodIs an excimer of 100 nm to 500 nm
Means for generating a laser;
0nm excimer laser100 μm to 2 mm width
Optical means for condensing linearlyAnd the 1
Of excimer laser of 00nm to 500nmLinear irradiation
Moving table that moves in a direction substantially perpendicular to the longitudinal direction of the surface
LeWithultravioletLight irradiation deviceUsingFormed on the substrate
Hydrogen has been addedAmorphous silicon semiconductor
In layersExcimer laser irradiationAt the same time, the substrate is
The movement of the moving table
Controlled by the dataAmorphous silicon semiconductor
A depth of less than 1000 mm from the surface of the body layer
It is characterized by the following. [0007] [Action] Amo to which hydrogen or the like is added on the substrate
Rufussilicon1000 ° or less from the surface of the semiconductor layer
Excimer laser with a depth of 100nm to 500nm
The crystallization takes place. The excimer laser iswidth
100 μm to 2 mmIt is condensed linearly and the length of the irradiated surface
On a moving table that moves in a direction substantially perpendicular to the hand direction
The above amorphous placed onsiliconIrradiate semiconductor layer
I do. The above amorphous placed on a moving tableSiri
ConThe semiconductor layer is sequentially formed from one end to the other end.
With an excimer laser of 0 nm to 500 nm,
Scanning is performed at a constant speed. In addition, the linearly focused 100
Excimer lasers from nm to 500 nm have shorter wavelengths
Because of the above amorphoussilicon1 from the surface of the semiconductor layer
It is effective for heating a depth of less than 000 °. Further
In addition, 100 nm to 500 nm
Kisima lasersControlled by microcomputer
Was doneBecause it is scanned sequentially by the moving table,
amorphoussilicon1000 mm or less from the surface of the semiconductor
Is heated, the above amorphoussiliconSemiconduct
Does not raise the temperature of the whole body. Therefore, hydrogen etc.
Amorphous to which is addedsiliconSemiconductor layer crystal
It is difficult to degas hydrogen and the like when performing gasification. [0008] The present inventionOf semiconductors inApply light irradiation method
In particular, light annealing of semiconductor devices is particularly effective.
Will be described. For example, generating electromotive force by light irradiation
Have at least one PI or NI junction
Amorphous to which hydrogen etc. are addedsiliconSemiconduct
The body is 100n condensed linearly by the optical means
m to 500 nm of excimer laser
On a moving table that moves in a direction substantially perpendicular to the longitudinal direction
Is placed. Then, the light irradiation method as described above is adopted.
Then, the amorphoussiliconThe surface of the semiconductor
There is a difference in light intensity between the peripheral part and the central part like pot light.
Because there is no100 μm to 2 mm widthFocused linearly
Excimer laser of 100nm to 500nm is uniform
Is irradiated. As described above, the linearly condensed 10
The excimer laser of 0 nm to 500 nm is
FasssiliconScanning the surface of the semiconductor, the whole of the semiconductor
By successive irradiation over the surface,
Fasssilicon1000 ° or less from the surface of the semiconductor layer
This part is more crystallized while light annealing.
You. The moving table is driven by a table drive.
By the device and the control device,100μm to 2 width
mm100nm to 500nm focused linearly
Excimer laser is amorphous with hydrogen added
siliconCrystallize layers less than 1000mm from semiconductor surface
To a suitable speed, e.g.
Controlled by the computer. According to the semiconductor manufacturing apparatus,
AmorphousSilico1000 mm or less from the surface of semiconductor
Layers at lower depths are crystallized and increase conductivity.
The I layer formed below the P layer or the N layer is
Is not converted. Therefore, the I layer has a large light absorption coefficient.
That is, the photoelectric conversion efficiency is not reduced. Also optical hand
By the steps, the linearly focused 100
optical annealing with excimer laser of nm to 500 nm
Does not generate heat. Therefore, hydrogen etc.
AsssiliconSince it is difficult to degas from the semiconductor, the P layer or
Prevents generation of recrystallization centers in the N layer. Sand
That is, the P layer or the N layer is condensed linearly without infrared light.
100 nm to 500 nm excimer laser
The optical annealing does not impair the conductivity. Amorph to which hydrogen or the like is added
AsssiliconThe semiconductor is a moving table and its driving device.
Simple movements such as moving in one direction
And by optical means,100 μm to 2 mm widthline
Excimer of 100 nm to 500 nm focused in a shape
By combining with a laser, the amorphousSilico
NPhoto-annealing a layer less than 1000 ° from the surface of the semiconductor layer
Laser annealing by intermittent spot light
The productivity can be improved as compared with the above. Said
An excimer laser of 100 nm to 500 nm is
The light is condensed linearly by the cylindrical lens. Meanwhile, light
The amorphous material capable of generating a photovoltaic force by irradiation
siliconThe semiconductor is the linearly condensed 100n.
m to 500 nm of excimer laser
On a moving table that moves in a direction substantially perpendicular to the longitudinal direction
Is placed. And the amorphoussiliconsemiconductor
Move the moving tableControlled by microcomputer
Let me moveAnd the linearly focused 100 nm
An excimer laser of 500 nm is irradiated uniformly. Thus, the linearly condensed 100
Excimer laser of nm to 500 nm doped with hydrogen, etc.
AmorphoussiliconScans the entire surface of the semiconductor
By doing so, the amorphoussiliconSemiconductor layer
A layer less than 1000 mm deep from the surface of the
More crystallized. The driving of the moving table
For example, the light is collected linearly by a microcomputer, etc.
100 nm to 500 nm excimer laser
The amorphoussilicon1000 pieces from the surface of the semiconductor
The rate is controlled to the rate required to crystallize the following layers:
As described above, the second invention is the same as the first invention.
The conversion efficiency of the light
Laser beam due to the intermittent spot light.
The productivity can be improved as compared with Neil or the like. The width of the linearly focused ultraviolet light is 100 μm.
m to 2 mm, the surface of the non-single-crystal semiconductor
The crystallization could be promoted with an appropriate thickness. [0013] [Embodiment] Hereinafter, the present invention will be described with reference to FIGS.
An embodiment of the present invention will be described. FIGS. 1A to 1D show books
In one embodiment of the invention, a longitudinal section showing a manufacturing process of a photoelectric conversion device.
FIG. In FIG. 1, the substrate (1) has an insulating surface treatment.
Metal foil flexible substrate (6), for example, 10-200 μ
m, especially stainless steel foil with a thickness of 20-50 μm.
The resin (7) has a thickness of 0.1 to 3 μm, for example, about 1.5 μm.
Is formed. The substrate (1) is shown in Fig. 1.
With a horizontal length of 60 cm and a width of 20 cm
Was. Also, the first conductive film extends over the entire surface of the substrate (1).
(2) is formed. That is, on the surface of the substrate (1),
Chromium or chromium-based metal film (25) is 0.1
Sputtering method to a thickness of ~ 0.5 μm, especially magnetron DC
It was formed by the putter method. The characteristics of laser scribe processing
The improvement is due to the high reflectivity of the highly reflective metal chromium
Sublimation (laser) with 1-50% by weight of copper or silver added to
Use metal (for light). Using such a sublimable metal
Laser scribes are preferred because they leave no residue after machining.
won. Furthermore, such Cu-Cr (chromium copper alloy), Cr-Ag
(Chromium silver alloy) is 500 nm ~ 7
The reflected light in the wavelength region of 00 nm is about 10% larger,
If light is reflected on the back side of (1),
Was effective. Furthermore, on this metal film (25),
The main component is tin oxide to which halogen elements such as fluorine are added.
Transparent conductive film, such as tin oxide indium (5
0Å to 2000Å, typically 500Å to 1500Å)
Formed by the spray method or the spray method.
The conductive film (2) was used. This first conductive film (2) is a metal film (2
5) Only. However, the metal of the metal film (25) is
To prevent back diffusion in semiconductor
The tin oxide indium blocking layer is very important
Was effective. Further, the tin oxide indium is
The contact with the P-type or N-type semiconductor layer on the upper surface
Excellent film contact and long wavelength of incident light
Substantially due to the reflection of light on the back electrode (first electrode (37))
To improve the reflection effect when increasing the optical path length
It was very effective. Then, the surface of the first conductive film (2)
The output of YAG laser processing machine (manufactured by NEC) is 0.3 ~
3W (focal length 40mm), spot diameter 20-70μm, typical
Is controlled by a microcomputer to 40 μm.
Irradiates the laser light. Then, the laser light is
The first groove (13) for scribe line is formed by scanning
Is done. And, between the first grooves (13), an inter-element region
(31) and (11) are formed, and the first electrode (37) is formed.
Is done. The first groove (1) formed by laser scribe
3) is about 50 μm wide and 20 cm long. In addition, the first
The depth of the groove (13) constitutes the first electrode (37)
As a result, the first conductive film (2) was completely cut and separated. Scratch
And the regions constituting the first element (31) and the second element (11)
Is formed as 5-40 mm, for example, 15 mm
Was. Thereafter, a plastic film is formed on the upper surface of the first conductive film (2).
Zuma CVD, photo CVD, or low pressure plasma CVD
As a result, the non-single-crystal semiconductor layer (3) has a thickness of 0.3 μm to 1.0 μm.
For example, it was formed to a thickness of 0.7 μm. The above non-single crystal semiconductor
The body layer (3) is a PN that generates photovoltaic
Or hydrogen or halogen element with PIN junction added
Have been. A typical example of the non-single-crystal semiconductor layer (3) is a P-type
(SixC_1-x0 <x <1) semiconductor (about 300 mm)-type I
Rufus or semi-amorphous silicon semiconductor (approx.
0.7 μm)-one of N-type crystallites (about 200 mm)
Has a PIN junction. The non-single-crystal semiconductor layer (3)
Type microcrystalline silicon (approximately 300 mm) semiconductor-I type semiconductor-P type fine
Crystallized Si semiconductor-P-type Si_xC_1-x(Approx. 50Å x = 0.2 to 0.
3). The non-single-crystal semiconductor layer (3) has a first conductive property.
A film having a uniform thickness was formed over the entire surface of the film (2). Further, as shown in FIG.
The second groove extends over the left side (first element side) of the 1 groove (13).
The groove (14) is formed by the second laser scribe process.
Was. In this embodiment, the first groove (13) and the second groove (14) are located between the first groove (13) and the second groove (14).
The center is shifted by 50 μm. Thus, the second groove (14)
Exposed the side surfaces (8) and (9) of the first electrode (37). Further
In this embodiment, the light-transmitting conductive film (15) of the first electrode (37) is used.
And only the surface of the metal film (25) may be exposed,
In order to improve the production yield, the laser light is 0.1 ~ 1W
For example, 0.8 w is a little too strong and the depth of this first electrode (37)
Remove all directions. As a result, the first conductive film (2)
Fig. 1 on the side (8) (only the side or the end of the side and top)
The connector (30) with the second electrode (38) shown in FIG.
Also, the contact resistance is generally an oxide-oxide contact (
Tin oxide (tin oxide / indium contact)
In particular, since no insulating barrier is formed at the interface.
There were no abnormalities such as greatness, and there were no practical problems. As shown in FIG. 1C, a non-single crystal half
The metal layer (5) and the connector (3
0) was formed. Furthermore, 500 nm in this embodiment is used.
Emit the following wavelengths (generally 200 nm to 450 nm)
An outline of the optical annealing apparatus and its method will be described with reference to FIG.
I will explain. FIG. 2 shows an embodiment of the present invention.
FIG. The irradiated substrate (60) is shown in FIG.
Placed on an X table (61) that moves in one direction
I have. Substrate on which the first conductive film (2) shown in FIG. 1 is formed
(1) is a substrate to be irradiated in the optical annealing apparatus shown in FIG.
Corresponds to (60). Light source is a bar-shaped ultra-high pressure mercury lamp (54)
With an output of 500 W or more and an emission wavelength of 200 nm to 650 nm.
Was. In particular, in this embodiment, the Toshiba ultra-high pressure mercury lamp (KHM-50,
Output 5kW) was used. That is, the power supply (50) is
Voltage AC200V, 30A and secondary voltage (52) AC4200V, 1.1 ~
1.6A. Further, the extra-high pressure mercury lamp (54)
Heat, due to the heat generated by the substrate to be irradiated (60).
To prevent the generation of nails, apply water outside the ultra-high pressure mercury lamp (54).
It was cooled by feeding (51) and (51 '). Super high pressure
Mercury lamp (54) emits short wavelength light from 300 nm to 450 nm
I do. In addition, 500 nm irradiated from an ultra-high pressure mercury lamp (54)
Light of the above wavelength is cut by the filter (59).
You. Only light with a short wavelength of 300 nm to 450 nm is blocked.
The light was collected by the cylindrical lens (55). Above
Since the high-pressure mercury lamp (54) is composed of a rod with a length of 20 cm,
A cylindrical lens (55) made of quartz was used. Further, the shutter (56) is provided with the short wave
Before long light is sufficiently collected, or a cylindrical lens
(55) and an extra-high pressure mercury lamp (54).
Thus, the short wavelength light generated from the ultra-high pressure mercury lamp (54)
The light becomes condensed linear ultraviolet light (57), and its width 1
It became 00 μm to 2 mm and 18 cm in length. At that time,
The energy density of the illuminated linear ultraviolet light (57) is about 5
KW / cm²(In the case of a width of 1 mm). Said focused
The irradiated linear ultraviolet light (57) irradiates the irradiated substrate (60).
Focused on the surface. Thereafter, the irradiated substrate (60) is
Table (61), the X table
Light is condensed by moving (61) at a constant speed.
Is scanned by the linear ultraviolet light (57).
You. In this case, the center is between 300 nm and 450 nm
The collected linear ultraviolet light (57)amorphoussemiconductor
Almost at a depth of less than 1000 ° near the surface of layer (3)
It will be absorbed. For this reason,amorphousSemiconductor layer
In (3), a very thin region near the surface is crystallized.
Will be. In addition, the optical annealing according to this embodiment
Because of light annealing that does not include light, there is no heat generation,
Degass hydrogen or halogen elements already containedHard to do
You. At the same time, the optical annealing according to this embodiment
Promotes crystallinity near the surface of the non-single-crystal semiconductor layer (3).
You. The vicinity of the surface where the crystallinity is promoted is optically
Crystallization without reducing the mechanical energy
The double that its light absorption coefficient can be reduced
Has features. However, the inside of the I layer, which is the active region,
It is necessary to increase the light absorption coefficient. That is, the activity
Crystalline region is amorphous or has a low degree of crystallinity
It must not be kept in a crystalline state, so-called polycrystallized. vice versa,
Select P-type or N-type or I layer in the vicinity
Selectively reduce the light absorption coefficient, and in addition, rejoin at the joint interface
Crystallized at the joint interface to reduce the density of the joint center
It is important to carry out polycrystallization (33) continuously. this
As a result, UV light of short wavelength can be selected only near the semiconductor surface.
Alternatively, light annealing can be performed. Then, the third laser scribe
The metal film (5) and the non-single-crystal semiconductor layer (3) are cut and separated.
The third groove (20) formed has multiple isolations.
The formed second electrodes (38) and (39) are formed. The metal film (5)
The light-transmitting conductive film (15) (CTF) was used. And that
The thickness of the light-transmitting conductive film (15) is 3003001500Å.
Was. As the translucent conductive film (15), an N-type semiconductor may be used.
Main component is tin oxide indium which has good ohmic contact
The mixture was formed as follows. Further, the transparent conductive film (1
5) is to form oxide indium as the main component
It is also possible. Furthermore, as a translucent conductive film (15)
Is formed from a non-oxide conductive film such as a chromium-silicon compound.
It is also possible to make it. As a result, the second electrode (3
8) and (39) were formed. The translucent conductive film (15) is an electron
Beam evaporation method, sputtering method, photo CVD method, photo
Non-single-crystal semiconductor layer using CVD method including plasma CVD method
Formed at a temperature of 250 ° C or less to prevent (3) from deteriorating
Was. Furthermore, the depth of the third groove (20) is simply the second electrode (3
8), not only removing (39), but also the non-single crystal under it
Removed simultaneously including the polycrystalline region (33) of the semiconductor layer (3).
You. As a result, a part of the first electrode (37) is exposed.
You. In the optical processing according to the present embodiment, the third groove (20) is formed.
When forming, the irradiation intensity of laser scribe (power density)
Degree), part of the second electrodes (38) and (39) remain.
That the two electrodes cannot be electrically separated
I prevented it. The laser light used in the present embodiment is the second electrode
The non-single-crystal semiconductor layer (3) closely contacting the lower surfaces of (38) and (39),
A polycrystalline region (33) with high electrical conductivity of polycrystallization
It was also extruded and removed. The laser light of this embodiment was irradiated.
Insulating the non-single-crystal semiconductor layer (3) in the region
The insulation between the two electrodes (38) and (39) was completed. others
Forming a first electrode (37) under the non-single-crystal semiconductor layer (3)
Translucent conductive film (15) from tin oxide indium
The main component is tin oxide, which has excellent heat resistance.
Leaves the electrode (37) to easily absorb the thermal energy of the laser beam
The non-single-crystal semiconductor layer (3) is used as a material for the second electrodes (38) and (39).
Both are selectively removed to easily form the third groove (20)
I was able to. In addition, the leakage is increased in manufacturing yield.
Ten^-FiveÅ / cm ~ 10^-7準 / cm quasi-defective device (5
% To 10%), then hydrofluoric acid 1: nitric acid
3: The acetic acid 5 is further diluted 5 to 10 times with water, and
Lightly etch only. And this etching is
Chemically removes silicon and low-grade oxide in trenches to a depth of 50 to 200 mm.
In addition, it is removed together with metal impurities such as indium and leaks.
Was effective in reducing the Thus, as shown in FIG.
Number of inter-element regions (11) and (31) are connected in series at the connection (4).
Photoelectric conversion device. Fig. 1 (D) is a book
The photoelectric conversion device of the embodiment is completed. Sand
That is, as a passivation film, a plasma gas phase method or
Silicon nitride film (2
1) has a uniform thickness of 500 to 2000 mm,
-The generation of electric current caused by adsorption of moisture or the like is further prevented. Sa
In addition, the photoelectric conversion device includes external extraction electrodes (24), (24 ').
Was provided on the periphery. In FIG. 1 (D),
For example, on a 60 cm x 20 cm substrate (1), each element has a width of 14.35.
mm x 192 mm, and the width of the connecting part
150 mm, width of external extraction electrode part 10 mm, peripheral part 4 mm
, It is practically 40 steps within 580 mm x 192 mm
Was made. As a result, the segment of the photoelectric conversion element is 1
1.3% (1.05cm^TwoIf the conversion efficiency is
6.6% (theoretically 9.1%, but 40-stage series connection
The effective conversion efficiency decreased due to the resistance (AM1 [100 mw / cm
^Two)), The output power of 68.4 w
Was. Also, this panel, for example 40cm x 40cm or
60cm x 20cm 3 or 4 in series aluminum sash
Assembled in a solid frame or in a flexible frame of carbon black
Packaged by mating, 120cm x 40c
m NEDO standard high power panel can be installed.
is there. Also, for this NEDO standard panel,
On the back of the glass substrate (opposite the irradiated surface)
Attach the upper surface of the photoelectric conversion device of the embodiment, wind pressure, rain, etc.
On the other hand, it is also effective to increase the mechanical strength. Further
Next, specific examples when implementing the present invention will be described. Specific Example 1 Referring to FIGS. 1A to 1D, in this embodiment,
A specific example will be described. That is, a metal having an insulating coating
The substrate made of foil (1) is a stainless steel foil with a thickness of about 50 μm.
Coated to 1.5 μm thickness using polyimide resin on the surface of
I did it. The size of the substrate (1) at that time is 60cm in length and width
It was 20 cm. In addition, gold with an insulating coating
Substrate made of metal foil (1) has copper on it 1.0 to 10 weight
%, For example 2.5% by weight added chromium
Formed to a thickness of 0.1 to 0.2 mm by sputtering.
Was. In addition, SnO_TwoBut spa to 1050mm thickness
It was formed by the tta method. Next, the first groove (13) is
-The spot diameter of 50μm, output 0.5W, microcomputer
0.3 to 3 m / min (average 3 m / min) controlled by a computer
Formed at a scanning speed of. The inter-element regions (11) and (31)
The width was 15 mm. Thereafter, a known PCVD method, a photo CVD method or
Is the PIN junction shown in Fig. 1 by photo-plasma CVD
A non-single-crystal semiconductor layer (3) having one was formed. Non-simple
The total thickness of the crystalline semiconductor layer (3) was about 0.7 μm. So
After that, the first groove (13) is monitored by an industrial television.
50 μm from the first groove (13) to the first inter-element region (31).
At the shifted position, spot diameter 50μm, average output 0.5
W, room temperature, frequency 3KHz, scanning speed 60cm / min
The second groove (14) was formed by laser scribing.
Thereafter, using the apparatus shown in FIG.
Performed on conductor layers. Slightly formed by the optical annealing
Crystallized P-type semiconductor layer and underlying I-type semiconductor layer
The region consisting of was constituted as a polycrystalline region (33). Further
The I-type semiconductor (34) below the polycrystalline region (33) is
Silicon semiconductors containing morphus or low-grade microcrystalline hydrogen
Was left as. The region (33) where the crystallinity is promoted is about 800 mm.
In this polycrystalline region (33), the X-text shown in FIG.
-Change the moving speed of the
By applying light, the light annealing can be made deep or shallow.
It became possible to be. The semiconductor thus obtained is divided by 1 /
Remove the insulating oxide on the surface by immersion in 10 hydrogen fluoride
Further, the whole is made of tin oxide / a, which is a light-transmitting conductive film.
Is formed by sputtering, and the average film thickness is
To the second metal film (5) and connector
(30) was configured. Furthermore, the third groove (20) is the same
Next, a laser scribe is used to create a 50 μm line from the second groove (14).
At the first inter-element region (31) side.
Thus, the configuration shown in FIG. At this time, the third groove (2
As shown in the drawing, the depth of the first electrode (3) is
It reached the surface of 7). Therefore, the translucent conductive film (1
5) and the non-single-crystal semiconductor layer (3) have been completely removed.
Was. The laser beam has an average output of 0.5 W, and the other
The conditions were the same as those for forming the groove (14). In the step of FIG.
Then, the end of the panel is connected to the first electrode (37) with a laser light output of 1 W,
Based on all of the non-single-crystal semiconductor layer (3) and the second electrodes (38) and (39)
Scan a rectangle 4 mm inside the edge of the plate (1), and
An electrical short circuit with the frame was prevented. Then, a silicon nitride film (2
1) by PCVD method or photo-plasma CVD method
It was formed at a temperature of 250 ° C. to a thickness of 000 mm. Then 2
For a panel of 0cm x 60cm, the element is 40mm in 15mm width.
I was able to. AM1 (100mw)
/ Cm^Two), The output was 6.7% and the output was 73.8w.
Effective area is 1102cm^Two91.8% of the entire panel
It could be used effectively. Specific Example 2 Stainless steel formed on a 20cm x 60cm substrate (1)
A 30μm thick polyimide resin (7) is coated on the foil.
Is being processed. Furthermore, one photoelectric conversion device for calculators
In the case of 5 cm x 1 cm, the substrate (1)
A photoelectric conversion device can be used. Here in the photoelectric conversion device
One element shape is 9 mm × 9 mm, and a 5-stage continuous array
-. The first electrode (37) is made of a reflective metal chrome / silver (
Silver 1% to 10% by weight, for example 2.5% by weight)
Was. Tin oxide indium is formed by sputtering.
The lower second electrodes (38) and (39) are
Formed. Further, on the upper surface of the first conductive film (2), NI
A non-single-crystal semiconductor layer (3) having a P junction was formed. Sa
Further, by irradiating the light of an ultra-high pressure mercury lamp (54) from the surface,
Non-single-crystal semiconductor layer (3)
The fraction was polycrystallized. Further, the second electrodes (38) and (39)
Tin oxide (1050Å) was formed on the P-type semiconductor. That
Others are the same as the specific example 1. The connection between each element is 100 μm,
Electrodes are the left and right ends of Fig. 1 (A) and (B)
Electrodes (24), (24 ') were provided. Then 250
Was able to make a calculator device at once. 3.8% effective
Test with 500 LX under fluorescent light as a good product with conversion efficiency or higher
did. As a result, a final production yield of 76% can be obtained.
Came. Final production yield of conventional method is 40-50%
And the required area of the connecting part was large.
Considering that this example is extremely effective
I understand. Further, the substrate (1) is a strong pallet of 10 to 15 watts.
Laser cutting using laser light enables automatic cutting
became. In this embodiment, the upper light irradiation side is transparent.
Organic resin for light protection (22), (23), for example, for ultraviolet light irradiation
By overlapping the more hardening resin, the metal layer and the
Structure that sandwiches the photoelectric conversion device between the resin
Flexible, very inexpensive and capable of mass production
became. In the present embodiment, the ultra-high pressure mercury lamp (5
4) was performed. However, this 100 nm to 500 nm
Wavelength light can also be obtained using an excimer laser.
You. [0035] According to the present invention, optical meansWidth 1
00 μm to 2 mm100nm focused linearly
The excimer laser of 500nm has a short wavelength,
Amorphous to which hydrogen is addedsiliconSemiconductor layer
A layer with a depth of 1000 mm or less from the surface of
it can. According to the present invention, the linearly focused 100
nm to 500 nm excimer laserMicro Ko
By computer controlDepending on the moving table,
MorphassiliconIn order to sequentially scan the semiconductor layer,
amorphoussilicon1000 mm or less from the surface of the semiconductor layer
The layers at the lower depth are sequentially heated, and the temperature of the whole
Hydrogen is not easily degassed without rising more than necessary. The present invention
According to the above, it is possible to generate a photovoltaic by light irradiation
amorphoussiliconBy optical means to the semiconductor layer,Previous
Record100 nm to 500 nm
By performing optical annealing only with the Shima laser,
Fasssilicon1000 ° or less from the surface of the semiconductor layer
Layer can be crystallized and
The occurrence of confluence can be prevented. According to the present invention, the ammo
RufussiliconMoving the semiconductor layer in one direction
so,Said100 nm to 500 nm focused linearly
Excimer laser is amorphoussiliconSemiconductor layer
Light annealed a layer less than 1000mm deep from the surface
At the same time as the laser
Productivity is improved as compared with a tool or the like.

BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1D are longitudinal sectional views showing a manufacturing process of a photoelectric conversion device according to an embodiment of the present invention. FIG. 2 is a conceptual diagram of an optical annealing apparatus according to an embodiment of the present invention. [Description of Signs] 1 ... Substrate 2 ... First conductive film 3 ... Non-single-crystal semiconductor layer 4 ... Connecting portion 5 ... Metal film 6 ... Flexible substrate 7 ... Polyimide resin 8 Side surface 9 of electrode Side surface 10 of electrode Irradiation light 11 First inter-element region 13 First open groove 14 Second open groove 15 ..Transparent conductive film 20... Third groove 21... Silicon nitride films 22 and 23... Transparent protective organic resin 24 and 24 ′. Film 30 connector 31 second element region 33 polycrystalline region 34 region having low crystallinity 37 first electrodes 38 and 39 second electrode 50 Power supply 51, 51 'Water 52 Secondary voltage 53 Mirror 54 Ultra-high pressure mercury lamp 55 Cylindrical lens 56 Shut Target 57: Condensed linear ultraviolet light 59: Filter 60: Irradiated substrate 61: X table

   ────────────────────────────────────────────────── ─── Continuation of front page    (56) References JP-A-57-194518 (JP, A)                 JP-A-57-155726 (JP, A)                 JP-A-57-104217 (JP, A)                 JP-A-58-191420 (JP, A)                 JP-A-58-190899 (JP, A)                 JP-A-58-127318 (JP, A)                 JP-A-56-108231 (JP, A)

Claims (1)

(57) [Claims] 1. Excimer laser of 100nm to 500nm is emitted
Means to live, The excimer laser of 100 nm to 500 nmwidth
Optical means for condensing into a linear shape of 100 μm to 2 mm
When, 100 nm to 500 nm energy condensed into the linear shape
Kisima LaserAt right angles to the longitudinal direction of the linear irradiation surface
Moving table moving in the directionWhen, HaveultravioletLight irradiation deviceAmorphous silicon using
In the method of irradiating the semiconductor layer with light, Hydrogen formed on the substrate is addedamorphous
Silicon semiconductor layerExcimer laser irradiationThen at the same time
The movement of the moving table on which the substrate is placed.
Controlled by micro computer, the aboveAmorph
1000 mm or less depth from the surface of the silicon semiconductor layer
Semiconductor illumination characterized by using polycrystalline silicon
Shooting method.