JPH06105793B2 - Semiconductor device manufacturing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus for irradiating a non-single crystal semiconductor with ultraviolet light to carry out optical annealing to single crystallize the vicinity of its surface.

[0002]

2. Description of the Related Art A technique for neutralizing recombination centers by adding hydrogen or the like to a non-single crystal semiconductor is described in, for example, Japanese Patent Application Laid-Open No. 58-25281. Further, techniques for accelerating crystallization of a non-single crystal semiconductor by photo-annealing are disclosed, for example, in JP-A-57-53986, JP-A-56-23784, JP-A-56-81981, and JP-A-57. -99729, respectively.

[0003]

However, the annealing technique disclosed in the above publication is optical annealing including infrared light. Since the infrared light has a longer wavelength than the ultraviolet light, the lights interfere with each other and are scattered even when condensed by a lens. Therefore, the photo-annealing including the infrared light could not promote the crystallization of the desired thickness of the non-single crystal semiconductor, particularly the semiconductor having a thickness of 1000 Å or less. Optical annealing including infrared light includes, for example, a Q-switch oscillation pulse using laser light, or continuous laser light scanning with a rotating mirror. It is known that light irradiation by light annealing including infrared light promotes crystallization of a non-single crystal semiconductor.

However, since the laser annealing is made up of continuous circular spot light, there is either a gap between the spot lights or an overlapping portion. Therefore, it is difficult to uniformly crystallize the laser annealing using the circular spot light. Further, laser annealing including infrared light degasses hydrogen, which prevents the generation of recombination centers in the non-single crystal semiconductor by the heat of infrared light. In particular, the laser annealing using the circular spot light has a problem that a large amount of heat is generated by the infrared light in the overlapping portion of the light and degassing of hydrogen is severe. Further, the I layer, which is the active region, needs to have a large light absorption coefficient to increase the light conversion efficiency. However, since infrared light penetrates deeply into the non-single-crystal semiconductor, there is a problem in that the infrared light is crystallized to the active region to lower the light absorption coefficient.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus which prevents the generation of recombination centers of a non-single crystal semiconductor and does not degas hydrogen. Another object of the present invention is to provide a semiconductor manufacturing apparatus that promotes crystallization of a non-single crystal semiconductor with a desired thickness and by uniform optical annealing. A further object of the present invention is to provide a semiconductor manufacturing apparatus in which the vicinity of the bonding surface of a non-single crystal semiconductor is crystallized, and the I layer is left as a non-single crystal having high light absorption. A further object of the present invention is to provide a semiconductor manufacturing apparatus that improves productivity by scanning condensed linear ultraviolet light.

[0006]

(First Invention) A semiconductor device manufacturing apparatus of the present invention is formed on a substrate.
Less PI or NI junction in non-single crystal semiconductor layer
Both have one, and the ultraviolet light generation part (5 in FIG. 2 is
The optical device (53, 55, 56, 59 in FIG. 2) that linearly collects only the ultraviolet light generated by 4) and the non-single crystal semiconductor that can generate a photoelectromotive force by light irradiation are collected. A moving table which is arranged so as to be irradiated with the irradiated linear ultraviolet light (57 in FIG. 2) and which moves the non-single crystal semiconductor in a direction substantially perpendicular to the longitudinal direction of the linear ultraviolet light. (61 in FIG. 2) and the vicinity of the surface of the non-single crystal semiconductor
The focused linear ultraviolet light (57) is scanned so as to photoanneal the P layer and PI interface or the N layer and NI interface at to promote crystallinity. It comprises a moving table driving device for driving the moving table (61).

(Second Invention) A semiconductor device manufacturing apparatus of the present invention is formed on a substrate.
Less PI or NI junction in non-single crystal semiconductor layer
Both have one, 100nm to 500n
An optical device (53, 55, 56, 59) composed of a means (54) for generating m ultraviolet light and a cylindrical lens (55 in FIG. 2) for collecting linear ultraviolet light, and light irradiation. A non-single-crystal semiconductor capable of generating a photoelectromotive force is arranged so as to be irradiated with the condensed linear ultraviolet light (57), and the non-single-crystal semiconductor is elongated in the longitudinal direction of the linear ultraviolet light. A moving table (61) that moves in a direction substantially perpendicular to the direction, and a P layer near the surface of the non-single crystal semiconductor
And driving the moving table (61) so that the collected linear ultraviolet light (57) is scanned so as to photoanneal the PI interface or the N layer and the NI interface to promote crystallinity. It is composed of a moving table driving device.

(Third invention) The width of the linearly condensed ultraviolet light (57) used in the semiconductor manufacturing apparatus of the present invention is 10
It is characterized in that it is 0 μm to 2 mm.

[0009]

[Operation] (First invention) The light generated by the ultraviolet light generator is only the ultraviolet light linearly condensed by the optical device. On the other hand, the non-single crystal semiconductor capable of generating an electromotive force by light irradiation is placed on a moving table that moves in a direction substantially perpendicular to the longitudinal direction of the collected linear ultraviolet light. Then, the non-single crystal semiconductor is moved by a moving table, so that the collected ultraviolet light is uniformly irradiated. As described above, when the surface of the non-single-crystal semiconductor is scanned with the condensed linear ultraviolet light, the entire surface of the semiconductor is irradiated with the P-layer and the PI field in the vicinity of the surface.
The face, or the N-layer and NI interface, is photo-annealed to become more crystallized. The driving of the moving table is controlled by the table driving device at a speed suitable for the condensed linear ultraviolet light to crystallize the surface of the non-single crystal semiconductor.
According to the above-described semiconductor device manufacturing apparatus, the P layer or N layer in the vicinity of the surface of the non-single crystal semiconductor is crystallized to increase conductivity, whereas the P layer or N layer is formed below the P layer or N layer. The I layer present is not crystallized. Therefore, the I layer has a large light absorption coefficient and does not lower the photoelectric conversion efficiency.

Further, heat is not generated in the photo-annealing with the condensed linear ultraviolet light containing no infrared light. for that reason,
Since hydrogen is not degassed from the non-single crystal semiconductor, generation of recrystallization centers in the P layer or N layer is prevented. That is, the conductivity of the P layer or the N layer is not deteriorated by the photo-annealing by the collected linear ultraviolet light containing no infrared light. Furthermore, the non-single crystal semiconductor has a uniform and desired thickness by combining a simple operation such as movement in one direction with the focused linear ultraviolet light by a moving table and its driving device. In addition to being able to perform optical annealing, productivity can be improved as compared with laser annealing by intermittent spot light.

(2nd invention) The light generated by the ultraviolet light generator becomes only the ultraviolet light of 100 nm to 500 nm by passing through the filter. After that, the 100 nm to 500 nm ultraviolet light is linearly condensed by a cylindrical lens. On the other hand, a non-single-crystal semiconductor capable of generating a photoelectromotive force by light irradiation is placed on a moving table that moves in a direction substantially perpendicular to the longitudinal direction of the collected linear ultraviolet light. Then, the non-single crystal semiconductor is moved by a moving table, so that the collected ultraviolet light is uniformly irradiated. Thus, the condensed 100 nm
To 500 nm of linear ultraviolet light scans the entire surface of the non-single-crystal semiconductor, so that the P layer in the vicinity of the surface is scanned .
And the PI interface, or the N and NI interfaces, are photo-annealed to become more crystallized. The drive of the moving table is
The table driving device controls the collected linear ultraviolet light at an appropriate speed for crystallizing the surface of the non-single crystal semiconductor. As described above, the second invention is similar to the first invention in that the conversion efficiency is improved, the light annealing can be performed to a uniform and desired thickness, and the second invention is compared with the laser annealing by the intermittent spot light. Productivity can be improved.

(Third Invention) By setting the width of the ultraviolet light linearly collected to be 100 μm to 2 mm, crystallization could be promoted with an appropriate thickness from the surface of the non-single crystal semiconductor. .

[0013]

EXAMPLE An example of the present invention will be described below with reference to FIGS. 1 and 2. 1A to 1D are vertical sectional views showing a manufacturing process of a photoelectric conversion device according to an embodiment of the present invention. In FIG. 1, a substrate (1) is a flexible substrate (6) made of a metal foil having an insulating surface treatment, for example, 10 to 200 μm.
Polyimide resin (7) is formed in a thickness of 0.1 to 3 μm, for example, about 1.5 μm on a stainless steel foil having a thickness of 20 to 50 μm. The substrate (1) used had a length of 60 cm in the left-right direction shown in FIG. 1 and a width of 20 cm. In addition, the first conductive film is formed on the entire surface of the substrate (1).
(2) is formed. That is, on the surface of the substrate (1),
Chromium or a metal film (25) containing chromium as the main component is 0.1
It was formed to a thickness of .about.0.5 .mu.m by sputtering, especially magnetron DC sputtering.

In order to improve the characteristics at the time of performing the laser scribing, the sublimation property (laser light) obtained by adding 1 to 50% by weight of copper or silver to chromium, which is a reflective metal having a high optical reflectivity, is used. On the other hand, a metal is used. Laser scribing using such a sublimable metal is preferable because no residue remains after processing. Furthermore, such Cu-Cr (chromium copper alloy), Cr-Ag
(Chromium-silver alloy) is 500 nm ~ 7
The reflected light in the wavelength range of 00 nm is as large as about 10%.
When the light was reflected on the back side of (1), the light was trapped and it was effective. Furthermore, on this metal film (25),
A transparent conductive film containing tin oxide as a main component to which a halogen element such as fluorine is added, for example, tin oxide indium (5
0 Å ~ 2000 Å, typically 500 Å ~ 1500 Å) is formed by the sputtering method or the spray method,
It was used as a conductive film (2). The first conductive film (2) is a metal film (2
5) only is acceptable. However, in order to prevent the metal of the metal film (25) from back-diffusing into the semiconductor in the subsequent step, the tin oxide-indium blocking layer was extremely effective.

Further, this tin oxide indium is
It has excellent ohmic contact with the P-type semiconductor layer or the N-type semiconductor layer on its upper surface, and in addition, it reflects the long wavelength light of the incident light at the back electrode (first electrode (37)). It was also extremely effective in improving the reflection effect when increasing the substantial optical path length. Then, on the surface of the first conductive film (2), the output of YAG laser processing machine (NEC) 0.3
Laser light is irradiated from above with 3 W (focal length 40 mm), spot diameter 20 to 70 μm, typically 40 μm controlled by a micro computer. Then, the scanning of the laser light forms the first open groove (13) for the scribe line. Then, the inter-element regions (31) and (11) are formed between the first open grooves (13), and the first electrodes (37) are formed. The first open groove (1
3) has a width of about 50 μm and a length of 20 cm. Also, the first
With respect to the depth of the groove (13), the first conductive film (2) was completely cut and separated to form the first electrode (37). Thus, the width of the regions forming the first element (31) and the second element (11) was formed to be 5 to 40 mm, for example, 15 mm.

After that, the non-single crystal semiconductor layer (3) is formed on the upper surface of the first conductive film (2) by a plasma CVD method, a photo CVD method, or a low pressure plasma CVD method to a thickness of 0.3 to 1.0 μm, for example, 0.7 μm. Was formed. The non-single crystal semiconductor layer
In (3), hydrogen or a halogen element having a PN or PIN junction that generates a photoelectromotive force by irradiation light (10) is added. A typical example of the non-single-crystal semiconductor layer (3) is a P-type (SixC
_1-x 0 <x <1) semiconductor (approx. 300 Å) -I type amorphous or semi-amorphous silicon semiconductor (approx. 0.7 μ)
m) -It has one PIN junction consisting of N-type microcrystal (about 200 Å). The non-single crystal semiconductor layer (3) is made of N-type microcrystalline silicon (about 300 Å) semiconductor-I-type semiconductor-P-type microcrystallized.
Si semiconductor-P type Si _x C _1-x (about 50Å x = 0.2 to 0.3). The non-single-crystal semiconductor layer (3) is the first conductive film (2).
Was formed with a uniform film thickness over the entire surface.

Further, as shown in FIG. 1B, the second groove is formed on the left side (first element side) of the first groove (13).
The groove (14) was formed by the second laser scribing process. In this embodiment, the centers of the first open groove (13) and the second open groove (14) are offset by 50 μm. Thus, the second open groove (14)
Exposed the side surfaces (8) and (9) of the first electrode (37). Further, in this embodiment, the transparent conductive film (15) of the first electrode (37) is used.
And only the surface of the metal film (25) may be exposed,
In order to improve the manufacturing yield, the laser light of 0.1 to 1 W, for example, 0.8 w is too strong to remove all of the first electrode (37) in the depth direction. As a result, the first conductive film (2)
Figure 1 on the side (8) (side only or side and top edge)
Even if the connector (30) with the second electrode (38) shown in (C) is in close contact, its contact resistance is generally oxide-oxide contact (
Tin oxide-tin oxide-indium contact) was not formed, and no insulator barrier was formed at the interface, so there was no abnormality such as an increase, and there was no problem in practice.

As shown in FIG. 1C, the metal film (5) and the connector (3) are formed on the surface of the non-single crystal semiconductor layer (3).
0) was formed. Furthermore, in this embodiment, 500 nm
An outline of an optical annealing device that emits light having the following wavelength (generally 200 nm to 450 nm) and its method will be described with reference to FIG.

FIG. 2 shows an embodiment of the present invention, which is a conceptual diagram of an optical annealing apparatus. The irradiated substrate (60) is placed on an X table (61) which moves in one direction as shown in FIG. Substrate on which the first conductive film (2) shown in FIG. 1 is formed
(1) is a substrate to be irradiated in the optical annealing apparatus shown in FIG.
Corresponds to (60). The light source used was a rod-shaped ultra-high pressure mercury lamp (54) with an output of 500 W or more and an emission wavelength of 200 nm to 650 nm. In particular, this embodiment is based on the Toshiba high pressure mercury lamp (KHM-50,
Output 5kW) was used. That is, the power supply (50) has a primary voltage of AC200V, 30A and a secondary voltage (52) of AC4200V, 1.1 ~.
It was set to 1.6A.

Further, in order to suppress the heat generation of the ultra high pressure mercury lamp (54) and to prevent generation of thermal anneal due to the heat generation of the irradiated substrate (60), the outside of the ultra high pressure mercury lamp (54) is covered with water.
It was cooled by supplying (51) and (51 '). The ultra high pressure mercury lamp (54) emits short wavelength light of 300 to 450 nm. The light with a wavelength of 500 nm or more emitted from the extra-high pressure mercury lamp (54) is cut by the filter (59). Then, only light with a short wavelength of 300 to 450 nm was condensed by the cylindrical lens (55). Since the ultra-high pressure mercury lamp (54) is composed of a rod-shaped body having a length of 20 cm, a cylindrical lens (55) made of quartz was used.

Further, the shutter (56) is provided before the short-wavelength light is sufficiently condensed, or the cylindrical lens (5
It was arranged between 5) and the ultra-high pressure mercury lamp (54). Thus,
The short-wavelength light emitted from the ultra-high pressure mercury lamp (54) was condensed into linear ultraviolet light (57), which had a width of 100 μm to 2 mm and a length of 18 cm. At that time, the collected linear ultraviolet light (57)
Has an energy density of about 5 KW / cm ² (when the width is 1 mm). The condensed linear ultraviolet light (57) is condensed on the irradiation surface of the substrate (60) to be irradiated. After that, since the irradiated substrate (60) is placed on the X table (61),
By moving the X table (61) at a constant speed,
It will be scanned by the collected linear ultraviolet light (57). As a result, the condensed linear ultraviolet light (57) centered at 300 nm to 450 nm is almost absorbed at a depth of 1000 Å or less, which is near the surface of the non-single crystal semiconductor layer (3).
Therefore, in the non-single crystal semiconductor layer (3), a very thin region near the surface is crystallized. In addition, since the photo anneal according to the present embodiment is a photo anneal that does not contain infrared light, no heat is generated and hydrogen or halogen elements already contained are not degassed.

At the same time, the optical annealing according to this embodiment promotes crystallinity in the vicinity of the surface of the non-single crystal semiconductor layer (3). The vicinity of the surface where the crystallinity is promoted has a dual feature that the light absorption coefficient can be reduced by crystallization without reducing the optical energy. However, the inside of the I layer, which is the active region, is
It is necessary to increase the light absorption coefficient. That is, the active region should be kept in an amorphous or low-crystalline state and should not be so-called polycrystallized. vice versa,
In order to selectively reduce the light absorption coefficient of the P-type or N-type or the I layer in the vicinity of the P-type or N-type, and to reduce the density of recombination centers at the bonding interface, the layers are made to be crystalline continuously at the bonding interface It is important to cause polycrystallization (33). As a result, short-wavelength ultraviolet light can be selectively annealed only near the semiconductor surface.

After that, the third open groove (20) formed by cutting and separating the metal film (5) and the non-single-crystal semiconductor layer (3) by the third laser scribing is used to form a plurality of isolated second grooves. The electrodes (38) and (39) are formed. A transparent conductive film (15) (CTF) was used for the metal film (5). The transparent conductive film (15) was formed to a thickness of 300Å to 1500Å. The translucent conductive film 15 was formed of a mixture containing tin oxide-indium as a main component which makes good ohmic contact with the N-type semiconductor. In addition, the transparent conductive film (1
As 5), it is possible to form indium oxide as a main component. Further, the transparent conductive film (15) can be formed of a non-oxide conductive film such as a chromium-silicon compound.

As a result, the second electrode (3
8) and (39) were formed. The transparent conductive film (15) is formed by a non-single crystal semiconductor layer using a CVD method including an electron beam evaporation method, a sputtering method, a photo CVD method and a photo plasma CVD method.
In order not to deteriorate (3), it was formed at a temperature of 250 ℃ or less. Further, the depth of the third open groove (20) is simply the second electrode (3
Not only 8) and (39) but also the polycrystalline region (33) of the underlying non-single-crystal semiconductor layer (3) is removed at the same time. As a result, the first electrode (37) exposes a part thereof. Then, in the optical processing according to the present embodiment, when the third open groove (20) is formed, a part of the second electrodes (38) and (39) is caused by variations in the irradiation intensity (power density) of the laser scribe. It remained and prevented that the two electrodes could not be electrically separated. The laser light used in the present embodiment is the second electrode.
The non-single-crystal semiconductor layer (3), which is in close contact with the lower surfaces of (38) and (39), in particular, the polycrystalline region (33) having a high electric conductivity of polycrystallization was also dug out and removed.

Further, the laser light of this embodiment is designed to insulate the non-single crystal semiconductor layer (3) in the irradiated region,
The insulation between the two electrodes (38), (39) was perfected. Therefore, the translucent conductive film (15) forming the first electrode (37) below the non-single crystal semiconductor layer (3) is mainly made of tin oxide, which is superior in heat resistance to tin oxide / indium. As a component, this first
The third open groove (20) is formed by selectively removing the non-single-crystal semiconductor layer (3), which retains the electrode (37) and easily absorbs the thermal energy of laser light, together with the materials for the second electrodes (38) and (39). ) Could be easily formed. Furthermore, there is a leak in terms of manufacturing yield.
For quasi-defective devices with 10 ^-5 to 10 ^-7 Å / cm (with 5-10% of the total), then hydrofluoric acid 1: nitric acid 3: acetic acid 5
Is further diluted 5-10 times with water and only the surface is lightly etched. Then, this etching was effective in chemically removing silicon and lower oxide in the open groove portion to a depth of 50 to 200 Å together with metal impurities such as indium and reducing the leak.

Thus, as shown in FIG. 1C, the plurality of inter-element regions (11) and (31) can be used as a photoelectric conversion device connected in series at the connecting portion (4). FIG. 1D shows the completed photoelectric conversion device of this embodiment. That is, as a passivation film, a silicon nitride film (2
In 1), a uniform thickness of 500Å to 2000Å was used to further prevent the generation of leak current between elements due to adsorption of moisture. Furthermore, the photoelectric conversion device has external extraction electrodes (24) and (24 ′).
Was installed in the surrounding area. In FIG. 1D, each element has a width of 14.35 mm on a substrate (1) of 60 cm × 20 cm, for example.
It is provided in the form of a strip of mm × 192 mm, and the width of the connecting part
150 mm, width of external extraction electrode part 10 mm, peripheral part 4 mm
As a result, 40 steps were formed substantially within 580 mm × 192 mm.

As a result, the number of segments of the photoelectric conversion element is 1.
When the conversion efficiency is 1.3% (1.05 cm ² ), 6.6% (theoretically 9.1%) is displayed on the panel, but the effective conversion efficiency is lowered by the resistance of 40-stage series connection (AM1 [100 mw / cm
² ]), it was possible to have an output power of 68.4w. Also, this panel, for example 40 cm x 40 cm or
120 cm x 40 c by combining 3 or 4 60 cm x 20 cm in series in a rigid frame made of aluminum sash or a flexible frame made of carbon black.
It is possible to install a high power panel of NEDO standard. Also, for this NEDO standard panel, the upper surface of the photoelectric conversion device of the present embodiment is attached to the back surface of the glass substrate (the side opposite to the irradiation surface) by means of seaflex, and the mechanical strength against wind pressure, rain, etc. is increased. It is also effective to increase the number. Further, specific examples for carrying out the present invention will be given.

Specific Example 1 A specific example of this embodiment will be described with reference to FIGS. 1 (A) to 1 (D). That is, the substrate (1) made of a metal foil having an insulating film is coated with a polyimide resin on the surface of a stainless foil having a thickness of about 50 μm to a thickness of 1.5 μm.
I got it. The size of the substrate (1) at that time is 60 cm in length and width.
It was 20 cm. Furthermore, the substrate (1) made of a metal foil on which an insulating film is formed has 0.1 Å to 0.2 Å of chromium with 1.0 to 10% by weight of copper, for example 2.5% by weight, added thereto by magnetron sputtering. Formed to a thickness of. Further, SnO ₂ was formed on the upper surface by a sputtering method to have a thickness of 1050Å. Next, the first open groove (13) has a spot diameter of the YAG laser of 50 μm, an output of 0.5 W, and is controlled by a micro computer to 0.3 to 3 m / min (average 3 m / min).
Formed at a scanning speed of. The inter-element regions (11) and (31) are
The width was 15 mm.

After that, a non-single-crystal semiconductor layer (3) having one PIN junction shown in FIG. 1 was formed by a known PCVD method, photo CVD method or photo plasma CVD method. The total thickness of the non-single crystal semiconductor layer (3) was about 0.7 μm. After that, the first open groove (13) is monitored by an industrial television, and the spot diameter is 50 μm and the average output is 0.5 at a position shifted by 50 μm from the first open groove (13) to the first inter-element region (31) side.
The second open groove (14) was formed by laser scribing at W, room temperature, frequency of 3 KHz, and scanning speed of 60 cm / min.
Then, the optical annealing process was performed on the P-type semiconductor layer using the apparatus of FIG. The region composed of the P-type semiconductor layer microcrystallized by the optical annealing and the I-type semiconductor layer thereunder was formed as a polycrystalline region (33). Further, the I-type semiconductor (34) under the polycrystalline region (33) was left as a silicon semiconductor containing amorphous or low-grade microcrystalline hydrogen.

The region (33) where the crystallinity is promoted is about 800 Å
By varying the moving speed of the X-table (61) shown in FIG. 2 or repeatedly irradiating the polycrystalline region (33), the photo-anneal can be made deeper and deeper. It became possible to make it shallow. The semiconductor thus obtained is 1 /
It is immersed in 10% hydrogen fluoride to remove the insulating oxide on the surface, and then the whole is formed with tin oxide indium, which is a transparent conductive film, by the sputtering method, and the average film pressure is 700Å. After the fabrication, the second metal film (5) and the connector (30) were constructed. Further, the third open groove (20) is similarly formed by laser scribing so as to be shifted to the first inter-element region (31) side by a depth of 50 μm beyond the second open groove (14). ). At this time, the third open groove (2
As shown in the drawing, the depth of (0) is such that the bottom of the first electrode (3
It reached the surface of 7). Therefore, the transparent conductive film (1
5) and the non-single crystal semiconductor layer (3) were completely removed.

The laser light has an average output of 0.5 W, and the others have the second output.
The conditions were the same as those for producing the open groove (14). After the step of FIG. 1 (C), the edge of the panel is connected to the first electrode (37) with laser light output of 1 W,
All of the non-single crystal semiconductor layer (3), the second electrodes (38) and (39) were scanned in a rectangular shape 4 mm inside from the end of the substrate (1) to prevent electrical short circuit with the panel frame. After that, a silicon nitride film (2
1) is 1 by PCVD method or photo plasma CVD method.
It was formed to a thickness of 000Å at a temperature of 250 ° C. Then 2
The 0 cm × 60 cm panel could have 40 rows of elements with a width of 15 mm. AM1 (100mw as the effective efficiency of the panel
/ Cm ² ), it was possible to obtain 6.7% and an output of 73.8 w.
The effective area was 1102 cm ² , and 91.8% of the entire panel could be effectively used.

Concrete Example 2 On a stainless steel foil formed on a substrate (1) having a size of 20 cm × 60 cm, a polyimide resin (7) having a thickness of 30 μm is coated. In addition, one photoelectric conversion device for calculator
When the size is 5 cm × 1 cm, a plurality of photoelectric conversion devices can be provided on the substrate (1). Here, the shape of one element in the photoelectric conversion device was 9 mm × 9 mm, and a 5-step continuous array was used. The first electrode (37) is a reflective metal such as chrome / silver (
1 to 10% by weight of silver, for example 2.5% by weight) alloy.
The tin oxide indium was formed by the sputtering method, and the second lower electrodes (38) and (39) were formed by laser scribing. Further, a non-single crystal semiconductor layer (3) having an NIP junction was formed on the upper surface of the first conductive film (2). further,
The surface of the non-single-crystal semiconductor layer (3) was polycrystallized at a depth of 1000 Å or less by irradiating the surface with light from an ultra-high pressure mercury lamp (54). Further, for the second electrodes (38) and (39), tin oxide (1050 Å) was formed on the P-type semiconductor. Others are the same as those in the first specific example.

The connecting portion between the elements was 100 μm, and the left and right ends of the external electrodes in FIGS. 1A and 1B were provided as external extraction electrodes (24) and (24 ′). I was able to make 250 calculator devices at once. A test with 500 LX under fluorescent light was performed with an effective conversion efficiency of 3.8% or more as a good product. As a result, a final manufacturing yield of 76% could be obtained. Considering that the final manufacturing yield in the conventional method was only 40 to 50% and the required area of the connecting portion was large, it can be understood that this example is extremely effective. Further, the substrate (1) can be automatically cut by laser scribing using intense pulsed light of 10 to 15 w.

In this example, the metal layer and the organic resin are combined with the light-transmitting organic resin (22), (23), for example, a resin which is cured by ultraviolet light irradiation, on the upper light irradiation side. The photoelectric conversion device can be sandwiched between the two, and it has flexibility, is extremely inexpensive, and enables mass production. In this embodiment, the ultraviolet light is emitted from an ultra high pressure mercury lamp (5
4). However, this wavelength light of 100 nm to 500 nm can also be used by using an excimer laser.

[0035]

According to the present invention, a non-single-crystal semiconductor capable of generating a photoelectromotive force by irradiation with light is annealed by an optical device using only the ultraviolet light linearly condensed to obtain a non-single crystal. P layer and P near the surface of the single crystal semiconductor
The I interface, or the N layer and the NI interface can be crystallized and the recombination center can be prevented from being generated in a desired portion. Further, according to the present invention, by moving the non-single-crystal semiconductor in one direction, it is possible to uniformly photo-anneal only the desired portion of the ultraviolet light linearly condensed, and at the same time, the laser due to the intermittent spot light is emitted. Productivity is improved compared to annealing.

[Brief description of drawings]

1A to 1D are vertical sectional views showing a manufacturing process of a photoelectric conversion device according to an embodiment of the present invention.

FIG. 2 is a conceptual diagram of an optical annealing apparatus according to an embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... 1st conductive film 3 ... Non-single-crystal semiconductor layer 4 ... Connection part 5 ... Metal film 6 ... Flexible substrate 7 ... Polyimide resin 8 ... ..Side surface of electrode 9 ... Side surface of electrode 10 ... Irradiation light 11 ... First inter-element region 13 ... First open groove 14 ... Second open groove 15 ... Translucency Conductive film 20 ... Third open groove 21 ... Silicon nitride film 22, 23 ... Translucent protective organic resin 24, 24 '... External extraction electrode 25 ... Metal film 30 ... Connector 31 ... Second inter-element region 33 ... Polycrystalline region 34 ... Region having low crystallinity 37 ... First electrode 38, 39 ... Second electrode 50 ... Power supply 51, 51 '... Water 52 ... Secondary voltage 53 ... Reflector 54 ... Super high pressure mercury lamp 55 ... Cylindrical lens 56 ... Shutter 57 ... Concentrated linear ultraviolet light 59 ... Filter 60 ... Irradiated substrate 61 ... X table

Claims (3)

[Claims] 1. A non-single-crystal semiconductor layer formed on a substrate
With at least one PI or NI junction
In a conductor device manufacturing apparatus, an optical device that linearly collects only the ultraviolet light generated by the ultraviolet light generator, and a non-single-crystal semiconductor that can generate a photoelectromotive force by light irradiation are collected. A moving table that is arranged so as to be irradiated with linear ultraviolet light and that moves the non-single crystal semiconductor in a direction substantially perpendicular to the longitudinal direction of the linear ultraviolet light; and the surface of the non-single crystal semiconductor. P layer and PI field in the vicinity
A moving table driving device that drives the moving table so that the condensed linear ultraviolet light is scanned so that the surface or the N layer and the NI interface are annealed by light to promote crystallinity. Semiconductors characterized by
Equipment manufacturing equipment. 2. A non-single-crystal semiconductor layer formed on a substrate
With at least one PI or NI junction
In a manufacturing apparatus of a conductor device, 100 nm to 500 nm
nm ultraviolet light only, an optical device including a linear lens that collects linear ultraviolet light, and a non-single-crystal semiconductor that can generate a photoelectromotive force by light irradiation. Of the non-single-crystal semiconductor, the non-single-crystal semiconductor is arranged so as to be irradiated with linear ultraviolet light, and the non-single-crystal semiconductor is moved in a direction substantially perpendicular to the longitudinal direction of the linear ultraviolet light. P layer and P near the surface
A moving table driving device that drives the moving table so that the focused linear ultraviolet light is scanned so that the I interface or the N layer and the NI interface are annealed by light to promote crystallinity. An apparatus for manufacturing a semiconductor device, which is configured. 3. The width of the ultraviolet light condensed into the linear shape is 1
2. The size is from 00 μm to 2 mm.
Alternatively, the semiconductor device manufacturing apparatus according to claim 2.