JP2000340814A - Manufacture of thin-film solar cell module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a method of manufacturing a thin-film solar cell module with high efficiency by reducing an unnecessary current pass at the exposed surface of a semiconductor, which is removed at the same time of scribing a second electrode layer. SOLUTION: This method consists following steps: a step of removing the part of a first electrode layer formed on a substrate 1 and dividing the first electrode layer corresponding to a plurality of unit elements, a step of forming a semiconductor layer 4 on the first electrode layer 1, a step of removing a part of the semiconductor layer and providing connecting openings to the first electrode layer on the semiconductor layer corresponding to the plurality of unit elements, a step of forming a second electrode layer 6 on the semiconductor layer, a step of removing a part of the second electrode layer and the semiconductor layer in the vicinity of the connection openings and dividing the second electrode layer and the semiconductor layer corresponding to the plurality of the unit elements, a step of exposing the ends of the semiconductor layer by removing residues on the second electrode layer and the semiconductor layer, and a step of heat-treating at 130 deg.C or higher.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an integrated thin-film solar cell module having a plurality of unit elements formed on a substrate, and to partially divide the second electrode into a plurality of unit elements. Removal of defects generated in the process and improvement of the contact interface between the semiconductor layer and the second electrode contribute to realization of a highly efficient integrated thin-film solar cell.

[0002]

2. Description of the Related Art In recent years, solar cells for directly converting solar energy into electric energy have begun to be widely used. Already, crystalline solar cells using single crystal silicon, polycrystalline silicon, or the like have been put to practical use as outdoor power solar cells. On the other hand, a thin-film solar cell using amorphous silicon or the like has attracted attention as a low-cost solar cell because of a small amount of raw materials, but is still in a development stage as a whole. Research and development of thin-film solar cells are being pursued in order to develop them into outdoor applications based on the results of power supply applications for consumer devices such as calculators that have already become widespread.

[0003] A thin-film solar cell constructs a desired structure by repeating deposition and patterning of a thin film using CVD, sputtering, or the like, similarly to a conventional thin-film device.
Usually, an integrated structure in which a plurality of unit elements are connected in series on one substrate is adopted. In a power solar cell for outdoor use, its substrate size is, for example, 400 × 800.
(Mm).

FIG. 1 is a sectional view showing the structure of a thin-film solar cell. FIG. 2 is a plan view schematically showing a thin-film solar cell. On a glass substrate 1, a first electrode layer 2, a semiconductor layer 4 made of amorphous silicon or the like, and a second electrode layer 6 are sequentially laminated. Each of these layers includes a plurality of unit elements 11.
Has been divided to correspond to. The second electrode layer 6 and the first
The electrode layer 2 is connected through a connection opening (scribe line) 5 provided in the semiconductor layer 4, and adjacent unit elements 11 are connected in series.

The first electrode layer 5 is made of tin oxide (Sn)
O ₂ ), zinc oxide (ZnO), indium tin oxide (IT
O) or another transparent conductive oxide is used. Second electrode layer 1
As 3, a metal film of aluminum (Al), silver (Ag), chromium (Cr), or the like is used.

[0006] Such an integrated thin-film solar cell is manufactured by the following method. A transparent conductive oxide such as SnO ₂ , ZnO, or ITO is deposited as a first electrode layer 2 on a glass substrate 1. The first electrode layer 2 is laser scribed at the position of the scribe line 3 to be separated corresponding to a plurality of unit elements (power generation regions). Washing is performed to remove fusing residue generated by laser scribing. On the first electrode layer 2, a semiconductor layer 4 made of amorphous silicon having a pin junction groove is deposited by a plasma CVD method. A part of the semiconductor layer 4 is laser-scribed at a position of a scribe line 5 which is apart from the scribe line 3 of the first electrode layer 2 by several tens μm to one hundred and several tens μm. This scribe line 5 becomes an opening for connection between the second electrode layer and the first electrode layer. On the semiconductor layer 4, as the second electrode layer 6, A
A metal film of 1, Ag, Cr or the like is deposited in a single layer or a plurality of layers. A part of the second electrode layer 6 is laser scribed at a position of a scribe line 7 separated from the scribe line 5 of the semiconductor layer 4 by several tens μm to one hundred and several tens μm. At this time, at the position of the scribe line 7, the second electrode layer 6 and the semiconductor layer 4 thereunder are simultaneously removed. In this way, a thin film solar cell in which a plurality of unit elements are connected in series and integrated is completed.

[0007] For example, E
A filler made of a thermosetting resin such as VA and a protective film made of a fluororesin (for example, Tedlar manufactured by DuPont) are laminated and sealed by a vacuum laminating method or the like.
Then, a thin-film solar cell module is completed by attaching a frame etc. around the thin-film solar cell.

Meanwhile, a conventional integrated thin film solar cell is
The problem was that the fill factor (FF value) of the output characteristics was particularly low. In the manufacture of the integrated thin-film solar cell, optimization of process conditions such as the film thickness of the first and second electrode layers 2 and 6 and the film quality of the semiconductor layer 4 are performed in order to improve characteristics. However, when the substrate has a large area,
Experiments for optimizing process conditions are complicated. Therefore, as a preliminary experiment, a thin-film solar cell having a small area is manufactured by a simple process, the characteristics are evaluated, optimal process conditions are determined, and the obtained optimal conditions are applied to a manufacturing process of a large-area thin-film solar cell.

However, even if the optimum process conditions for manufacturing a small-area thin-film solar cell are directly applied to the manufacturing process of a large-area thin-film solar cell, good results as in the previous experiment cannot be obtained, and the FF value cannot be obtained. Often decreases. Therefore, in a large-area integrated thin-film solar cell, the improvement of the FF value described above is indispensable and urgent in order to improve the conversion efficiency.

As a result of the study by the present inventor, two causes are considered to be the decrease in the FF value of the thin-film solar cell. The first cause is that the interface between the semiconductor layer 4 and the second electrode layer 6 is poor. The cause is described in Japanese Patent Laid-Open No. 9-8337.
The problem can be solved by forming a conductor layer on a semiconductor layer and preventing formation of a natural oxide film in a cleaning step after scribing the semiconductor layer, as disclosed in US Pat. A second cause is that a short circuit or conduction occurs in a part of the semiconductor layer which is removed at the same time as the part of the second electrode layer is scribed. That is, at the position of the scribe line of the second electrode layer, a new surface of the semiconductor appears between the second electrode layer and the first electrode layer. Since the new surface of the semiconductor is unstable, even if a small amount of impurity adheres, the electric resistance is lowered, which causes a short circuit or conduction between the second electrode layer and the first electrode layer.

Therefore, the present inventor has studied applying a known method to solve the problem caused by the second cause. However, as described below, it has been found that these methods are difficult to solve the problem.

For example, JP-A-61-198685 discloses that
It discloses that a semiconductor layer is scribed and separated by irradiation with a laser beam in an oxidizing atmosphere.
The present inventors have studied applying this method to scribe the second electrode layer to oxidize the exposed surface of the semiconductor layer. However, it is difficult to keep a large area substrate in an oxidizing atmosphere. Moreover, when the laser beam is irradiated, high heat may be locally generated and cause ignition, which is even dangerous.

A similar technique is disclosed in Japanese Patent Application Laid-Open No. 61-1567.
No. 75 discloses that an amorphous solar cell having a structure in which a metal electrode, a semiconductor layer, and a transparent electrode are laminated on a substrate is separated by processing with a laser in a heated steam atmosphere, and after separation,
It discloses that heat treatment is performed at a temperature of about 300 ° C.
In this method, in order to prevent crystallization of the amorphous semiconductor layer, heated steam is blown by a laser during processing. However, it has been found that in this method, since the substrate is heated and expanded, the processing accuracy by the laser is significantly reduced. Further, it is difficult to remove the residue of the processed portion even if the gas is blown, which is particularly difficult in high-speed processing. In this case, the processed surface cannot be completely and completely exposed.

Japanese Patent Application Laid-Open No. Sho 61-280679 describes the first
A method of forming an insulating heat-insulating layer thicker than a semiconductor layer in a region on an electrode layer corresponding to a scribe line of a second electrode layer is disclosed. According to this method, when the second electrode layer and the semiconductor layer therebelow are scribed, a section of the semiconductor layer appears between the first and second electrode layers because the insulating and heat-insulating layer exists below the semiconductor layer. There is no. However, since the insulating heat insulating layer is formed, the area of the element capable of generating power is reduced by that much. Moreover, it is difficult to accurately form an insulating and heat-insulating layer corresponding to a large-area element.

[0015] In addition to the above, JP-A-60-85574
Discloses the use of Cr or Ni as the second electrode based on the erroneous recognition that the second electrode forms an alloy with silicon in the scribing step of the second electrode, thereby causing conduction. However, in such a method, F
Obviously, the problem of a decrease in the F value cannot be solved.

As another means for recovering the decrease of the FF value,
For example, US Pat. No. 4,371,738 discloses an annealing technique. However, this technique describes the Staveler-Lonski effect, in which defects inside a semiconductor generated by irradiating hydrogenated amorphous silicon with light are eliminated by annealing. Cannot reduce the decrease in the FF value caused by the above.

[0017]

SUMMARY OF THE INVENTION The object of the present invention is to
An object of the present invention is to provide a method capable of manufacturing an efficient thin-film solar cell module by reducing unnecessary current paths on an exposed surface of a semiconductor which is removed at the same time as scribe of an electrode layer.

[0018]

A method of manufacturing a thin-film solar cell module according to the present invention has a substrate and a plurality of unit elements connected in series on the substrate, and each unit element is laminated on the substrate. A method for manufacturing a thin-film solar cell module including a first electrode layer, a semiconductor layer and a second electrode layer, the method comprising removing a part of the first electrode layer formed on a substrate and supporting a plurality of unit elements. And a step of dividing the first electrode layer, a step of forming a semiconductor layer on the first electrode layer, and removing a part of the semiconductor layer. Providing a connection opening with the electrode layer, forming a second electrode layer on the semiconductor layer, removing a part of the second electrode layer and the semiconductor layer in the vicinity of the connection opening, A step of dividing the second electrode layer and the semiconductor layer corresponding to the unit element; A step of exposing the end portion of the semiconductor layer by removing residues of the layer and the semiconductor layer, characterized by comprising a step of heat treatment at 130 ° C. or higher.

In the present invention, a laser beam is applied to remove the first electrode, the semiconductor layer, and a part of the second electrode. Irradiation with a laser beam is performed at around room temperature, specifically at room temperature ± 10 ° C.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS As described above, since the semiconductor layer under the second electrode layer is also removed at the time of laser scribing, the second electrode layer, a new surface of the semiconductor, and the portion where the first electrode layer appears. Can be. Since the new surface of the semiconductor is unstable, even if a small amount of impurity adheres, the electric resistance is reduced, and a short circuit or conduction may occur in this region.

It is known that a natural oxide film is formed on the surface of a semiconductor in an atmosphere such as the air.
The formation of this natural oxide film is an activation process, and proceeds rapidly by heating. The present invention utilizes this fact, and heat-treats at a temperature of 130 ° C. or higher, preferably 150 ° C. or higher after the division of the second electrode layer and the semiconductor layer.
The new surface of semiconductor is made nonconductive, and the first through semiconductor
-The conduction between the second electrode layers can be eliminated.

In the present invention, laser scribing is performed at around room temperature in order to avoid a reduction in processing accuracy due to thermal expansion of the substrate, so that the new surface of the semiconductor does not become nonconductive during laser scribing. .

In order to reliably obtain the effect of the heat treatment according to the present invention, it is necessary to expose the end face of the semiconductor layer in the scribe groove of the second electrode layer and the semiconductor layer at the time of the heat treatment. This is because if the second electrode layer and the semiconductor layer are simply divided by a laser, residues of the second electrode layer and the semiconductor layer are present in the scribe grooves to shield the end faces of the semiconductor layer. Is significantly reduced. Therefore, it is necessary to remove residues of the second electrode layer and the semiconductor layer before the heat treatment. As a method of removing the residue, ultrasonic cleaning in a liquid such as water or blowing of pressurized water is more effective than blowing of air.

The heat treatment of the present invention can be performed in the atmosphere using, for example, an oven. The heat treatment is performed, for example, at 150 ° C. for 20 minutes or more, or at 160 ° C. for 15 minutes or more. Note that the heat treatment can be performed at 130 ° C. or higher, preferably 140 ° C. or higher, more preferably 150 ° C. or higher, and at any temperature lower than the semiconductor layer formation temperature. This heat treatment only needs to be performed for a time sufficient to make the new surface of the semiconductor nonconductive, so that the heat treatment time at any temperature is
It can be determined as follows. That is, the horizontal axis is the reciprocal of the absolute temperature, the vertical axis is the logarithm of the reciprocal of time,
A point corresponding to a condition of 150 ° C. for 20 minutes,
A straight line (Arrhenius plot) connecting the points corresponding to the 5-minute condition is created. Based on this result, the heat treatment time is determined to be equal to or longer than the above-mentioned linear time at a predetermined heat treatment temperature.

The time of the heat treatment is not particularly limited as long as it is after the second electrode and the semiconductor layer are separated and processed. Also,
The heat treatment can be performed in an environment in which an oxidizing agent (such as oxygen) only oxidizes the end surface of the semiconductor layer.

Therefore, the heat treatment step of the present invention may be performed simultaneously with the step of laminating and sealing the filler resin and the protective film on the back surface of the solar cell module. In particular, when the filler is EVA, oxidation is promoted even in vacuum lamination because peroxide is used as a polymerization initiator. Also in this treatment, the heat treatment time needs to be set to a time at which the heat treatment effect can be sufficiently exhibited, not the curing time of the filler resin. Specifically, EVA called first cure is 150 ° C., 2
The heat treatment according to the present invention needs to be performed for about 20 minutes or more. However, if the heat treatment according to the present invention is performed for a long time using commercially available EVA, undesired phenomena such as decomposition may occur. Therefore, the sealing and annealing are actually performed in separate steps. Is preferred.

In the case where a reverse bias voltage is applied to a unit element during a manufacturing process of a solar cell module to incorporate a process of removing defects in a semiconductor layer, the heat treatment of the present invention may be performed before the reverse bias treatment. preferable. This is for the following reasons. That is, defects that occur during scribing of the second electrode layer and the semiconductor layer often occur linearly. The reverse bias treatment is suitable for removing point-like defects, but it is difficult to repair linear defects. Therefore, it is preferable to perform the reverse bias treatment after removing the conduction or short-circuit defect generated in the region from which the second electrode layer and the semiconductor layer have been removed by the heat treatment of the present invention.

[0028]

Embodiments of the present invention will be described below.

Example A solar cell module shown in FIG. 1 was manufactured as follows.

On a glass substrate 1 made of soda-lime glass having an area of 92 cm × 46 cm and a thickness of 4 mm, heat CV was applied.
Tin oxide film (8000 angstrom thick) by Method D
2 was formed. This tin oxide film 2 was divided at a scribe line 3 by a laser scriber at room temperature (25 ° C.) to obtain transparent electrodes corresponding to a plurality of unit elements. Specifically, the substrate 1 was set on an XY table, and a second harmonic having a wavelength of 532 nm was irradiated using a Q-switched YAG laser under the conditions of a frequency of 3 kHz, an average output of 500 nw, and a pulse width of 10 nsec. The separation width (the width of the scribe line 3) was set to 50 μm, and the width of the string constituting the unit element was set to about 10 mm. Thereafter, cleaning was performed to remove the fusing residue generated by laser scribing.

The substrate 1 was placed in a multi-chamber plasma CVD apparatus, and plasma CVD was performed at 200 ° C. to form an a-Si layer 4 on the patterned tin oxide film 2. This a-Si layer 4 is made of p-type a-SiC: H
Layer, an i-type a-Si: H layer, and an n-type microcrystalline Si: H layer, forming a pin junction. The film forming conditions for each of these semiconductor layers were as follows.

The p-type a-SiC: H layer is formed by mixing SiH ₄ at a flow rate of 100 sccm and B diluted to 1000 ppm with hydrogen.
₂ H ₆ flow rate 2000 sccm, CH for carbon alloying
₄ at a flow rate of 30 sccm and a pressure of 1
After setting to torr, a film was formed by applying a power of 200 W to generate plasma.

The i-type a-Si: H layer has a flow rate of SiH ₄ of 5
After supplying at 00 sccm and setting the pressure to 0.5 torr, a film was formed by applying a power of 500 W to generate plasma.

The n-type microcrystalline Si: H layer is made of PH diluted with hydrogen to 1000 ppm with a flow rate of 100 sccm of SiH _4.
H ₃ was supplied at a flow rate of 2000 sccm, and the pressure was set to 1 torr. Then, a power of 3 kW was applied to generate plasma to form a film.

At this time, the thickness of the p-type a-SiC: H layer is 1
50 Å, thickness of i-type a-Si: H layer is 3
200 Å, n-type microcrystalline Si: H layer of 30
The film forming time was adjusted so as to be 0 Å.

The substrate 1 is taken out of the plasma CVD apparatus, and the a-Si layer 4 composed of the above layers is formed at room temperature (25 ° C.).
Was patterned by a laser scriber. At this time, the scribe line 5 of the a-Si layer 4 was shifted by 100 μm from the scribe line of the tin oxide layer 2. Specifically, the substrate 1 is set on an XY table, and the second harmonic having a wavelength of 532 nm is converted to a frequency of 3 kHz, an average output of 500 nw, and a pulse width of 1 using a Q-switched YAG laser.
Irradiation was performed at 0 nsec. The separation width was set to 100 μm by shifting the focal position of the laser beam. After washing again, the fusing residue was removed.

The above substrate 1 is placed in a sputtering apparatus, and a film thickness of 1 is formed on the patterned a-Si layer 4 by RF magnetron sputtering using a ZnO target.
A 2,000 Å ZnO layer (not shown) was formed. Sputtering conditions were 2 mtorr of argon gas pressure.
r, discharge power 200 W, and film formation temperature 200 ° C. Next, an Ag layer 6 having a thickness of 2000 Å was formed on the ZnO layer by DC magnetron sputtering using an Ag target. The sputtering conditions were an argon gas pressure of 2 mtorr, a discharge power of 200 W, and a film forming temperature of room temperature.

The substrate 1 is taken out of the magnetron sputtering apparatus, and the Ag layer 6, the ZnO layer and the underlying a-Si
Layer 4 was patterned with a laser scriber at room temperature (25 ° C.). At this time, the scribe line 7 of the Ag layer 6 is 100 μm from the scribe line 5 of the a-Si layer 4.
Staggered. The processing conditions at this time were the same as the processing conditions for the a-Si layer 4. The separation width was set to 70 μm, and the string width was set to about 10 mm.

In order to electrically separate the solar cell active portion from the outside over the entire periphery of the substrate 1, the transparent electrode, the semiconductor layer and the back surface electrode in a region 5 mm inside from the periphery of the substrate 1 were removed by laser. Reference numeral 13 indicates a laser insulating separation line formed by this operation. Further, the semiconductor layers and the back electrodes outside the strings 11a and 11b at both ends were removed with a width of 3.5 mm to form a region 14 for forming a wiring for extracting electrodes.
Thereafter, in order to remove the residue of the semiconductor layer and the back electrode patterned by the laser scriber, ultrasonic cleaning was performed in pure water for 2 minutes. As a result, it was confirmed that the residue was removed in all the processed parts.

Next, solder is attached to the wiring area 14,
A bus bar electrode 16 made of a solder-plated copper foil was formed thereon, and wiring for taking out the electrode was performed. This bus bar electrode 16 is arranged in parallel with the string of the solar cell active part.

Thereafter, the substrate was placed in a clean oven and heat-treated at 160 ° C. for 20 minutes according to the method of the present invention.

After this heat treatment, a reverse bias treatment was performed to remove defects of each unit element. Further, the solar cell module was washed with pure water in order to remove dirt generated in the previous processing. The wiring was connected to the bus bar electrode 16.
An EVA sheet 8 and a protective film 9 made of a fluorine-based resin were stacked on the back surface of the solar cell module, and sealed using a vacuum laminator. Further, a silicone resin was filled in a portion from which the wiring was taken out. Finally, the terminals and the frame were mounted.

The current-voltage characteristics of the solar cell module thus obtained were measured using an AM1.5 solar simulator of 100 mW / cm ² . As a result, the short-circuit current was 1240 mA, the open-circuit voltage was 44.2 V, the fill factor was 0.70, and the maximum output was 38.4 W.

Comparative Example 1 A solar cell module was manufactured by the same process as described above except that the heat treatment step of the present invention was not performed, and the current-voltage characteristics were measured. As a result, the short-circuit current was 1240 mA, the open-circuit voltage was 42.9 V, the fill factor was 0.67, and the maximum output was 35.6.
W. Thus, the maximum output of Comparative Example 1 was about 2 W lower than that of Example.

When the heat treatment was performed after scribing the second electrode layer as in the example, the characteristics were recovered in all the unit elements due to the reverse bias treatment. On the other hand, in Comparative Example 1, a leak current was observed in half of the unit elements even when the reverse bias processing was performed. The existence of such a unit element in which a leak current occurs is also considered to be the cause of the decrease in the open circuit voltage and the fill factor.

Comparative Example 2 A reverse bias treatment was performed after laser scribing of the second electrode layer and the semiconductor layer, and then the substrate was placed in a clean oven and heat-treated at 160 ° C. for 20 minutes to produce a solar cell module. The properties were measured. as a result,
The short-circuit current was 1240 mA, the open-circuit voltage was 43.2 V, the fill factor was 0.676, and the maximum output was 36.2 W. This indicates that it is difficult to recover defects when heat treatment is performed after the reverse bias treatment.

[0047]

As described in detail above, according to the method of the present invention, the semiconductor layer removed at the same time as the second electrode layer is subjected to a heat treatment at 130 ° C. or more after the laser scribing of the second electrode layer and the semiconductor layer. The unnecessary current path on the exposed surface of the thin film solar cell module can be reduced, and a highly efficient thin film solar cell module can be manufactured.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a thin-film solar cell module according to the present invention.

FIG. 2 is a plan view of the thin-film solar cell module shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Tin oxide film 3 ... Scribe line 4 ... a-Si layer 5 ... Scribe line 6 ... Ag layer 7 ... Scribe line 8 ... EVA sheet 9 ... Protective film 11a, 11b ... String 13 ... Laser insulation separation line 14 area for wiring 16 bus electrode

Claims (15)

[Claims] 1. A thin film comprising: a substrate; and a plurality of unit elements connected in series on the substrate, wherein each unit element has a first electrode layer, a semiconductor layer, and a second electrode layer laminated on the substrate. A method for manufacturing a solar cell module, comprising: removing a part of a first electrode layer formed on a substrate and dividing the first electrode layer corresponding to a plurality of unit elements; Forming a semiconductor layer on the layer, removing a portion of the semiconductor layer,
A step of providing a connection opening with the first electrode layer in the semiconductor layer corresponding to the plurality of unit elements; a step of forming the second electrode layer on the semiconductor layer; Removing a part of the electrode layer and the semiconductor layer, dividing the second electrode layer and the semiconductor layer corresponding to the plurality of unit elements, and removing the residue of the second electrode layer and the semiconductor layer to remove the residue of the second electrode layer and the semiconductor layer. A method for manufacturing a thin-film solar cell module, comprising: a step of exposing an end portion; and a step of performing a heat treatment at a temperature of 130 ° C. or higher. 2. The method according to claim 1, wherein the heat treatment is performed at a temperature equal to or higher than 150 ° C. and lower than a temperature at which a semiconductor layer is formed. 3. The method according to claim 1, wherein the heat treatment is performed for a time sufficient to make the new surface of the semiconductor nonconductive. 4. The method according to claim 1, wherein the heat treatment is performed at 150 ° C. for 20 minutes or more. 5. The method according to claim 1, wherein the heat treatment is performed at 160 ° C. for 15 minutes or more. 6. In the heat treatment, the horizontal axis is the reciprocal of the absolute temperature,
Using the vertical axis as the logarithm of the reciprocal of time, a straight line connecting a point corresponding to the condition of 150 ° C. for 20 minutes and a point corresponding to the condition of 160 ° C. for 15 minutes is created. 2. The method for manufacturing a thin-film solar cell module according to claim 1, wherein the method is performed for a time equal to or longer than the time. 7. The method for manufacturing a thin-film solar cell module according to claim 1, wherein the heat treatment is performed in the atmosphere. 8. The method for manufacturing a thin-film solar cell module according to claim 1, further comprising a step of filling a resin on the back surface of the unit element, thermally curing the resin, and sealing. 9. The method for manufacturing a thin-film solar cell module according to claim 1, wherein the heat treatment is performed in a thermosetting process during a sealing process. 10. The method according to claim 1, further comprising a step of applying a reverse bias voltage to the unit element after the heat treatment to remove a defect. 11. The first electrode, the semiconductor layer, and the second electrode
The method for manufacturing a thin-film solar cell module according to claim 1, wherein a part of the electrode is removed by laser beam irradiation. 12. The method according to claim 11, wherein the laser beam irradiation is performed at around room temperature. 13. The method according to claim 1, wherein the semiconductor layer contains silicon as a main component. 14. The method according to claim 1, wherein the first electrode includes a transparent conductive oxide. 15. The thin-film solar cell module according to claim 1, wherein the second electrode includes a metal, a laminate of two or more metals, or a laminate of a transparent conductive oxide and a metal. Manufacturing method.