JP2741204B2 - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JP2741204B2
JP2741204B2 JP3627788A JP3627788A JP2741204B2 JP 2741204 B2 JP2741204 B2 JP 2741204B2 JP 3627788 A JP3627788 A JP 3627788A JP 3627788 A JP3627788 A JP 3627788A JP 2741204 B2 JP2741204 B2 JP 2741204B2
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JP
Japan
Prior art keywords
bonding
wire
resin
electrode
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3627788A
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Japanese (ja)
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JPH01209733A (en
Inventor
由延 岸本
Original Assignee
ローム 株式会社
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Priority to JP3627788A priority Critical patent/JP2741204B2/en
Publication of JPH01209733A publication Critical patent/JPH01209733A/en
Application granted granted Critical
Publication of JP2741204B2 publication Critical patent/JP2741204B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Description

【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明は、基板またはリードフレーム上にダイボンデ
ィングしたIC等の半導体素子の電極をファーストボンデ
ィング箇所とし、一方基板上の配線またはリードフレー
ムの電極をセカンドボンディング箇所とし。両電極間を
ボンディングワイヤで接続した半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial application field> The present invention uses a semiconductor element electrode such as an IC die-bonded on a substrate or a lead frame as a first bonding portion, and on the other hand, a wiring on a substrate or an electrode of a lead frame. Is the second bonding point. The present invention relates to a semiconductor device in which both electrodes are connected by a bonding wire.

＜従来の技術＞ 配線基板上に半導体素子を搭載し、配線導体とワイボ
ンディングにより接続した半導体装置として、基板上に
ドライバICを搭載するサーマルヘッドを例にとり、第３
図、第５図及び第６図を参照しつつ説明する。<Prior Art> As a semiconductor device in which a semiconductor element is mounted on a wiring board and connected to wiring conductors by wire bonding, a thermal head in which a driver IC is mounted on the board is taken as an example.
Description will be made with reference to FIG. 5, FIG. 5 and FIG.

サーマルヘッドにおいて、ドライバとしてのIC20を発
熱体11が形成されたセラミック基板10に搭載する場合に
は、IC20に設けられた電極21とサーマルヘッドの発熱体
11の電極13とを金線からなるボンディングワイヤ30で接
続する。When the IC 20 as a driver is mounted on the ceramic substrate 10 on which the heating element 11 is formed in the thermal head, the electrode 21 provided on the IC 20 and the heating element of the thermal head are used.
The eleven electrodes 13 are connected by bonding wires 30 made of gold wire.

ワイヤボンディングの形式は種々あるが、その一例と
してキャピラリ方式について述べる。Although there are various types of wire bonding, a capillary method will be described as an example.

ワイヤボンディングは自動ワイヤボンディング機械の
キャピラリチップから通常は金線であるボンディングワ
イヤ30が供給され、加圧状態において熱圧着法又は超音
波法等により、まずIC20のファーストボンディング箇
所、即ち、電極21に融着せしめる。その後、第６図に図
示するように、図外のワイヤボンディング機械により斜
め上方にキャピラリチップを移動させてセカンドボンデ
ィング箇所である電極13にボンディングワイヤ30を前記
と同様にして融着せしめ、その後適宜な方法で余分なボ
ンディングワイヤ30を切断する。In the wire bonding, a bonding wire 30, which is usually a gold wire, is supplied from a capillary tip of an automatic wire bonding machine, and the first bonding portion of the IC 20, that is, the electrode 21 is first pressed by a thermocompression bonding method or an ultrasonic method in a pressurized state. Let it fuse. Thereafter, as shown in FIG. 6, the capillary chip is moved obliquely upward by a wire bonding machine (not shown) to fuse the bonding wire 30 to the electrode 13 which is the second bonding site in the same manner as described above, and then, as appropriate, The extra bonding wire 30 is cut by a suitable method.

＜発明が解決しようとする課題＞ しかしながら、上記従来の技術においては、半導体装
置の使用中に、ボンディング箇所において、ワイヤ切れ
が生じることがある。この原因について種々検討した結
果、およそ次のことがその原因であることが判明した。<Problem to be Solved by the Invention> However, in the above-described conventional technology, a broken wire may occur at a bonding portion during use of the semiconductor device. As a result of various studies on the cause, the following was found to be the cause.

セカンドボンディング箇所においては、レジネート
金の配線パッドが形成されているが、コストダウンの関
係上、この電極はその厚さが極めて薄く、約7000Åであ
る。そのためボンディングワイヤ30とのなじみが悪いこ
と、セカンドボンディング箇所である電極の焼成条件
の違い等や焼成時フラックス等の汚れ等により融着が充
分強固にできないこと、ファーストボンディング箇所
においては通常アルミニウム材料が使用されているが、
前記同様、前処理における電極（パッド）の汚れや内部
歪み等の発生のため、ボンディングの際の融着が不十分
である場合があること、耐湿性、耐汚染性、機械的補
強、熱ストレスの緩和等の目的でICは軟質樹脂で被覆さ
れている。軟質樹脂は熱ストレスの緩和に役立つものの
機械的補強が弱いため外力はワイヤ接続部に集中的に働
き断線すること等である。ワイヤ切れの発生する率はセ
カンドボンディング箇所の方がファーストボンディング
箇所より多い傾向にある。At the second bonding portion, a resinate gold wiring pad is formed. However, due to cost reduction, this electrode is extremely thin, about 7000 mm. For this reason, the connection with the bonding wire 30 is poor, that the bonding cannot be sufficiently strong due to a difference in firing conditions of the electrode, which is the second bonding position, and the contamination during the firing, and the like. Used
Similarly to the above, due to the occurrence of contamination or internal distortion of the electrode (pad) in the pretreatment, the fusion at the time of bonding may be insufficient, moisture resistance, contamination resistance, mechanical reinforcement, heat stress. The IC is coated with a soft resin for the purpose of, for example, relaxation of the IC. The soft resin helps to reduce the thermal stress, but the mechanical strength is weak, so that the external force acts intensively on the wire connecting portion to break the wire. The rate of occurrence of wire breakage tends to be higher in the second bonding portion than in the first bonding portion.

本発明は上記事情に鑑みて創案されたもので、外力が
加わった場合においても、ボンディング箇所が切断する
ことのない信頼性の高い半導体装置を提供することを目
的としている。The present invention has been made in view of the above circumstances, and has as its object to provide a highly reliable semiconductor device in which a bonding portion is not cut even when an external force is applied.

＜課題を解決するための手段＞ 本発明に係る半導体装置は、半導体素子と配線導体と
をワイヤボンディングにより導電接続した半導体装置に
おいて、配線導体の電極とボンディングワイヤとの接着
部を硬質の樹脂でコーティングするとともに、前記接着
部は軟質のコート樹脂で半導体素子とともにコーティン
グされており、前記コート樹脂は前記硬質の樹脂と熱膨
張係数が略等しいものであることを特徴としている。<Means for Solving the Problems> In a semiconductor device according to the present invention, in a semiconductor device in which a semiconductor element and a wiring conductor are conductively connected by wire bonding, a bonding portion between an electrode of the wiring conductor and a bonding wire is made of a hard resin. In addition to the coating, the adhesive portion is coated with a soft coat resin together with the semiconductor element, and the coat resin has a thermal expansion coefficient substantially equal to that of the hard resin.

＜実施例＞ 以下、図面を参照して本発明に係る一実施例を説明す
る。Embodiment An embodiment according to the present invention will be described below with reference to the drawings.

第１図は第２図のａ部の拡大説明図、第２図はファー
ストボンディング箇所とセカンドボンディング箇所をワ
イヤボンディングした状態の説明図、第３図はサーマル
ヘッドの一部分の模式的平面図、第４図はワイヤボンデ
ィング後、硬質樹脂をコーティングし、その後ICコート
樹脂でIC全体をコーティングした状態の説明図である。FIG. 1 is an enlarged explanatory view of a portion a of FIG. 2, FIG. 2 is an explanatory view showing a state where a first bonding portion and a second bonding portion are wire-bonded, FIG. 3 is a schematic plan view of a part of a thermal head, FIG. 4 is an explanatory view showing a state in which a hard resin is coated after wire bonding, and then the entire IC is coated with an IC coat resin.

図面中10はセラミック基板であって、このセラミック
基板10の上にはサーマルヘッドを構成する各種部品が搭
載または形成されている。即ち、11は列状に形成された
発熱ドット、12は発熱ドット11の一方の側に接続される
コモンリード、13はIC20出力側に位置するセカンドボン
ディング箇所としての電極、14は外部回路に接続される
リード端子、20はサーマルヘッド駆動用IC、21はファー
ストボンディング箇所としてのIC20側の電極である。30
は電極21と電極13とを連結する金線、15は前記発熱ドッ
ト11と前記電極13間を連結する導電性パターンである。In the drawing, reference numeral 10 denotes a ceramic substrate on which various components constituting a thermal head are mounted or formed. That is, 11 is a heating dot formed in a row, 12 is a common lead connected to one side of the heating dot 11, 13 is a second bonding electrode located on the output side of the IC 20, and 14 is connected to an external circuit. Reference numeral 20 denotes a thermal head driving IC, and 21 denotes an electrode on the IC 20 side as a first bonding portion. 30
Is a gold wire connecting the electrode 21 and the electrode 13, and 15 is a conductive pattern connecting the heating dot 11 and the electrode 13.

セラミック基板10にIC20をダイボンディングした後、
ワイヤボンディングを行う場合には、セラミックまたは
ルビー等からなるキャピラリチップが使用される。まず
ファーストボンディング箇所である電極21に金線30をボ
ンディングする。After die bonding IC20 to ceramic substrate 10,
When performing wire bonding, a capillary tip made of ceramic, ruby, or the like is used. First, the gold wire 30 is bonded to the electrode 21 which is the first bonding position.

その後、セカンドボンディング箇所である電極13に前
記金線30をボンディングする。なお、上記したボンディ
ング作業はセラミック基板10を裏面側からヒータブロッ
クによって約250〜300℃に加熱しつつ、超音波を併用し
て行う。Thereafter, the gold wire 30 is bonded to the electrode 13 which is a second bonding point. The above-described bonding operation is performed by using ultrasonic waves while heating the ceramic substrate 10 from the back side to about 250 to 300 ° C. by the heater block.

前記ボンディング完了後、ファーストボンディング箇
所である電極21およびセカンドボンディング箇所である
電極13の上に硬質樹脂40のコーティングを施す（第１図
参照）。このコーティングはノズル等（図示省略）を電
極21、13に沿って移動させつつ行う。この硬質樹脂40と
して例えば硬質シリコン樹脂（いわゆるJCR（Junction
Coating Resin）等）、エポキシ系樹脂或いはUV樹脂が
使用される。本実施例では、その硬さが、JISK6253加硫
ゴムの硬さ試験方法、デュロメータ硬さ、タイプＡスケ
ールで言えば、軟質性のICコート樹脂50（本実施例では
従来例の場合の軟質樹脂と同じものを用いている）の硬
さに比べておよそ30以上高いものを用いている。この場
合、多数個の電極13を一度にコーティングしても良い
し、分割してコーティングしても良いが、セラミック基
板10との接着性、反り等を考慮すると分割コーティング
の方がより好ましい。なお、この硬質樹脂40はIC20を封
止する軟質性のICコート樹脂50と熱膨張率が略等しく、
かつなじみ性も良いものを選択して使用する。硬質樹脂
40でボンディング箇所をコーティングした後に、軟質性
のICコート樹脂50でIC20全体を封止する（第４図参
照）。After the completion of the bonding, a hard resin 40 is coated on the electrode 21 as the first bonding position and the electrode 13 as the second bonding position (see FIG. 1). This coating is performed while moving a nozzle or the like (not shown) along the electrodes 21 and 13. As the hard resin 40, for example, a hard silicon resin (so-called JCR (Junction
Coating Resin), an epoxy resin or a UV resin is used. In the present embodiment, the hardness is determined by the hardness test method of JIS K6253 vulcanized rubber, durometer hardness, and type A scale. The hardness is about 30 times or more higher than the hardness. In this case, a large number of electrodes 13 may be coated at one time or may be divided and coated, but in consideration of adhesion to the ceramic substrate 10, warpage, and the like, the divided coating is more preferable. Note that this hard resin 40 has a thermal expansion coefficient substantially equal to that of the soft IC coat resin 50 for sealing the IC 20,
Select and use those that have good familiarity. Hard resin
After coating the bonding portion with 40, the entire IC 20 is sealed with a soft IC coating resin 50 (see FIG. 4).

すなわち、セラミック基板10の電極13とボンディング
ワイヤ30との接着部分（セカンドボンディング箇所Ｄ、
Ｅ）は、硬質樹脂40とICコート樹脂50とによって２層コ
ーティングされていることになる。That is, the bonding portion between the electrode 13 of the ceramic substrate 10 and the bonding wire 30 (the second bonding portion D,
In E), two layers are coated with the hard resin 40 and the IC coat resin 50.

次に、セカンドボンディング箇所（Ｄ、Ｅ点）を硬質
樹脂40でコーティングしたもの、すなわち本発明に係る
ものと、コーティングをなんら施さなかったものとの強
度の比較を20個の試料について行った結果を示す。な
お、この実験はＣ点をボンディングワイヤ30に上向きの
引っ張り力を加えるいわゆるプルカット試験によって、
ボンディングワイヤ30の切断箇所を調べたものである
（第２図参照）。なお、以下の説明においてＡ点、Ｅ点
はワイヤと配線との接着部、Ｂ点、Ｄ点はボンディング
によるワイヤの変形端部とする。Next, the results of a comparison of the strengths of the second bonding portion (points D and E) coated with the hard resin 40, that is, the one according to the present invention and the one not coated at all, were performed on 20 samples. Is shown. In this experiment, the point C was subjected to a so-called pull-cut test in which an upward pulling force was applied to the bonding wire 30.
This is a result of examining a cut portion of the bonding wire 30 (see FIG. 2). In the following description, points A and E are the bonded portions between the wires and the wires, and points B and D are the deformed ends of the wires by bonding.

それに対してまったくコーティングを施さなかったも
のは第２表に示すように、Ａ点で切断されたものが０、
Ｂ点で切断されたものが８、Ｃ点で切断されたものが
１、Ｄ点で切断されたものが９、Ｅ点で切断されたもの
が２という結果になった。 On the other hand, in the case where no coating was applied, as shown in Table 2, the one cut at the point A was 0,
The result was 8 when cut at point B, 1 when cut at point C, 9 when cut at point D, and 2 when cut at point E.

この実験結果から判断すると、従来のものと比較して
セカンドボンディング箇所を硬質樹脂40でコーティング
したものはセカンドボンディング箇所でのワイヤ切断は
皆無となっており、硬質樹脂40によるコーティングが顕
著な補強効果を有することが判る。なおファーストボン
ディング箇所を硬質樹脂40でコーティングしたものも同
様の効果を有することも判明した。 Judging from the results of this experiment, when the second bonding part was coated with the hard resin 40 compared to the conventional one, there was no wire cutting at the second bonding part, and the coating with the hard resin 40 had a remarkable reinforcing effect It can be seen that It was also found that the first bonding portion coated with the hard resin 40 has the same effect.

なお、上記実施例ではサーマルヘッドを例として説明
を行ったが、本発明はこれに限定されるものではなく、
配線基板状に半導体装置を搭載する他のものにも応用す
ることができる。In the above embodiment, the thermal head has been described as an example, but the present invention is not limited to this.
The present invention can be applied to other devices in which a semiconductor device is mounted on a wiring board.

＜発明の効果＞ 以上、本発明に係る半導体装置による場合、配線導体
の電極とボンディングワイヤとの接着部を軟質の樹脂で
コーティングするとともに、前記接着部は軟質のコート
樹脂で半導体素子とともにコーティングされており、前
記コート樹脂は前記硬質の樹脂と熱膨張係数が略等しい
ものである構成となっているので、たとえ外力が加わっ
てもボンディング箇所及びボンディングワイヤが容易に
切断されず、接着部の耐湿、耐熱性が向上し、半導体装
置の信頼性を格段に高めることができる。As described above, in the case of the semiconductor device according to the present invention, the bonding portion between the electrode of the wiring conductor and the bonding wire is coated with a soft resin, and the bonding portion is coated with a soft coat resin together with the semiconductor element. Since the coating resin has a configuration in which the thermal expansion coefficient is substantially equal to that of the hard resin, even if an external force is applied, the bonding portion and the bonding wire are not easily cut, and the moisture resistance of the bonding portion is reduced. In addition, the heat resistance is improved, and the reliability of the semiconductor device can be significantly improved.

また、接着部を単に樹脂でコーティングしたたけで
は、ボンディングワイヤに大きな応力が加わるだけでな
く、場合によっては、この樹脂の表面上にボンディング
ワイヤの周囲を囲むような形で鋭利な立ち上がりが生じ
て、ワイヤ切れが生じることがあるが、本発明ではボン
ディングワイヤを軟質のコート樹脂でコーティングする
ようにしているので、このような事態が発生するおそれ
はない。しかも上記のような鋭利な立ち上がりが発生し
たとしても、これがボンディングワイヤを補強する役目
を果たし、半導体装置の信頼性を向上させることができ
る。In addition, simply coating the bonding portion with a resin not only causes a large stress to be applied to the bonding wire, but also causes a sharp rise on the surface of the resin in such a manner as to surround the bonding wire. However, in the present invention, since the bonding wire is coated with a soft coat resin, such a situation does not occur. In addition, even if the sharp rise as described above occurs, this serves to reinforce the bonding wire and improve the reliability of the semiconductor device.

【図面の簡単な説明】[Brief description of the drawings]

第１図〜第４図は本発明に係る図面で、第１図はファー
ストボンディング箇所とセカンドボンディング箇所をワ
イヤボンディングした状態の一部拡大説明図、第２図は
ファーストボンディング箇所とセカンドボンディング箇
所をワイヤボンディングした状態の説明図、第３図はサ
ーマルヘッドの一部分の模式的平面図、第４図はワイヤ
ボンディング後、硬質樹脂をコーティングし、その後IC
コート樹脂でIC全体をコーティングした状態の説明図、
第５図は従来の半導体装置のボンディングワイヤの先端
の拡大図、第６図は従来のワイヤボンディングを行う際
のキャピラリの移動を示す模式図である。 10……セラミック基板、13……電極（セカンドボンディ
ング箇所）、20……IC、21……電極（１ファーストボン
ディング箇所）、30……ボンディングワイヤ、40……硬
質樹脂。1 to 4 are drawings according to the present invention. FIG. 1 is a partially enlarged explanatory view showing a state in which a first bonding portion and a second bonding portion are wire-bonded. FIG. 2 shows a first bonding portion and a second bonding portion. FIG. 3 is a schematic plan view of a portion of a thermal head, and FIG. 4 is a diagram showing a hard resin coating after wire bonding, and then an IC.
Explanatory drawing of a state where the entire IC is coated with a coat resin,
FIG. 5 is an enlarged view of a tip of a bonding wire of a conventional semiconductor device, and FIG. 6 is a schematic diagram showing movement of a capillary when performing conventional wire bonding. 10: ceramic substrate, 13: electrode (second bonding location), 20: IC, 21: electrode (1st bonding location), 30: bonding wire, 40: hard resin.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】半導体素子と配線導体とをワイヤボンディ
ングにより導電接続した半導体装置において、配線導体
の電極とボンディングワイヤとの接着部を硬質の樹脂で
コーティングするとともに、前記接着部は軟質のコート
樹脂で半導体素子とともにコーティングされており、前
記コート樹脂は前記硬質の樹脂と熱膨張係数が略等しい
ものであることを特徴とする半導体装置。In a semiconductor device in which a semiconductor element and a wiring conductor are conductively connected by wire bonding, a bonding portion between an electrode of the wiring conductor and a bonding wire is coated with a hard resin, and the bonding portion is formed of a soft coat resin. Wherein the coating resin has a thermal expansion coefficient substantially equal to that of the hard resin.
JP3627788A 1988-02-17 1988-02-17 Semiconductor device Expired - Lifetime JP2741204B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3627788A JP2741204B2 (en) 1988-02-17 1988-02-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3627788A JP2741204B2 (en) 1988-02-17 1988-02-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH01209733A JPH01209733A (en) 1989-08-23
JP2741204B2 true JP2741204B2 (en) 1998-04-15

Family

ID=12465280

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Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP2741204B2 (en)

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US6888259B2 (en) 2001-06-07 2005-05-03 Denso Corporation Potted hybrid integrated circuit
JP2012174996A (en) * 2011-02-23 2012-09-10 Fujitsu Ltd Semiconductor device and semiconductor device manufacturing method
US11545446B2 (en) 2018-07-20 2023-01-03 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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Also Published As

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