JP2650499B2 - Method of forming electrical connection contact and method of mounting electronic component - Google Patents

Method of forming electrical connection contact and method of mounting electronic component

Info

Publication number
JP2650499B2
JP2650499B2 JP3024426A JP2442691A JP2650499B2 JP 2650499 B2 JP2650499 B2 JP 2650499B2 JP 3024426 A JP3024426 A JP 3024426A JP 2442691 A JP2442691 A JP 2442691A JP 2650499 B2 JP2650499 B2 JP 2650499B2
Authority
JP
Japan
Prior art keywords
electrical connection
metal
electronic component
substrate
metal ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3024426A
Other languages
Japanese (ja)
Other versions
JPH04263434A (en
Inventor
泰彦 堀尾
秋仁 畠山
寛敏 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3024426A priority Critical patent/JP2650499B2/en
Publication of JPH04263434A publication Critical patent/JPH04263434A/en
Application granted granted Critical
Publication of JP2650499B2 publication Critical patent/JP2650499B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3478Applying solder preforms; Transferring prefabricated solder patterns

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、ICチップに代表され
るチップ状の電子部品を基板上の端子電極群と接続する
ために、微細な電気的接続接点を基板上の端子電極上の
みに正確に形成する電気的接続接点の形成法、および実
装基板の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting a chip-shaped electronic component represented by an IC chip to a terminal electrode group on a substrate by forming fine electrical connection contacts only on the terminal electrodes on the substrate. The present invention relates to a method for accurately forming electrical connection contacts and a method for manufacturing a mounting substrate.

【0002】[0002]

【従来の技術】従来、電子部品の接続端子と基板上の回
路パターン端子との接続には半田がよく利用されていた
が、近年、たとえばICフラットパッケージ等の小型化
と、接続端子間、いわゆるピッチ間隔が次第に狭くな
り、従来のクリーム半田のスクリーン印刷による半田付
け技術で対処することが次第に困難になってきた。ま
た、最近では電卓、電子時計あるいは液晶ディスプレイ
などにあっては、裸のICチップをガラス基板上の電極
に直付けして実装面積の効率的利用を図ろうとする動き
があり、有効かつ微細な電気的接続手段が強く望まれて
いる。裸のICチップを基板の電極と電気的に接続する
方法としては、フリップチップ実装と呼ばれる実装方法
があり、これはメッキ技術によりICチップの電極パッ
ド上に形成した突出接点(バンプ)を用いて行うもので
ある。既知の突出接点の形成方法は、最初にIC基板上
の電極パッド上に、クロム(Cr)、銅(Cu)、金
(Au)等の金属メッキ部を形成した後、余分なレジス
トと金属蒸着膜を除去して、突出接点を形成するという
ものである。また、別の方法としてはメッキされたAu
バンプを印刷法で半田を介して接続することが提案され
ている。
2. Description of the Related Art Conventionally, soldering has often been used to connect a connection terminal of an electronic component to a circuit pattern terminal on a substrate. The pitch interval has been gradually narrowed, and it has become increasingly difficult to deal with the conventional soldering technique using screen printing of cream solder. In recent years, there has been a movement in calculators, electronic watches, liquid crystal displays, and the like in which a bare IC chip is directly attached to an electrode on a glass substrate to make efficient use of the mounting area. There is a strong need for electrical connection means. As a method of electrically connecting a bare IC chip to the electrodes of the substrate, there is a mounting method called flip chip mounting, which uses a protruding contact (bump) formed on an electrode pad of the IC chip by a plating technique. Is what you do. A known method of forming a protruding contact is to first form a metal plating portion such as chromium (Cr), copper (Cu), or gold (Au) on an electrode pad on an IC substrate, and then use an extra resist and metal deposition. The film is removed to form a protruding contact. Alternatively, plated Au may be used.
It has been proposed to connect the bumps by soldering by a printing method.

【0003】[0003]

【発明が解決しようとする課題】しかしながらメッキ技
術を用いたかかる方法においては、突出接点の形成方法
ならびにICチップの実装はかなり複雑で、多数の処理
工程および高度のエッチング、メッキ技術が必要であっ
た。また、従来のクリーム半田のスクリーン印刷による
半田付け技術では半田供給の限界が0.3mmピッチで
あり、さらに微細な接続は不可能であった。
However, in such a method using the plating technique, the method of forming the protruding contacts and the mounting of the IC chip are considerably complicated, and require many processing steps and advanced etching and plating techniques. Was. Further, in the conventional soldering technique using cream solder by screen printing, the solder supply limit is 0.3 mm pitch, and further fine connection is impossible.

【0004】本発明は上記問題点に鑑みてなされたもの
であり、その目的とするところは、微細かつ密に電子部
品の電極パッドと基板上の電極群とを信頼性よく直付け
するために、基板上の電極群、あるいは電子部品、たと
えばICチップの電極パッド上に電気的接続接点を簡易
に、かつ、精度よく形成し、さらにはICチップ実装に
不可欠な微細接続を提案することにある。
The present invention has been made in view of the above problems, and an object of the present invention is to reliably and directly attach an electrode pad of an electronic component to an electrode group on a substrate with high reliability. Another object of the present invention is to easily and accurately form electrical connection contacts on an electrode group on a substrate or an electronic component, for example, an electrode pad of an IC chip, and to propose a fine connection indispensable for IC chip mounting. .

【0005】[0005]

【課題を解決するための手段】本発明は上記問題点を解
決するため、微細ピッチ、微細端子電極が形成されてい
る基板の微細端子電極上への電気的接続接点の形成にお
いて、低融点合金または金属を主成分とする金属ボール
を基板の微細端子電極面を前記凹部中の前記金属ボール
に合わせて圧着して前記金属ボールを前記微細端子電極
面上に転写することにより電気的接続接点の形成を実現
しようとするものである。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention relates to a method for forming an electrical connection contact on a fine terminal electrode of a substrate having a fine pitch and a fine terminal electrode, the method comprising the steps of: Alternatively, a metal ball containing a metal as a main component is pressure-bonded by aligning the fine terminal electrode surface of the substrate with the metal ball in the concave portion, and the metal ball is transferred onto the fine terminal electrode surface to form an electrical connection contact. It is intended to realize the formation.

【0006】[0006]

【作用】本発明の上記した方法によれば、基板上の微細
端子電極上に簡易に突出接点を信頼性よく一括形成する
ことができ、簡易で信頼性の高い電気的接続接点が形成
できる。
According to the above-mentioned method of the present invention, the projecting contacts can be easily formed on the fine terminal electrodes on the substrate with high reliability and a simple and highly reliable electrical connection contact can be formed.

【0007】[0007]

【実施例】以下、本発明の一実施例の電気的接続接点の
形成方法ならびにこれを用いた実装基板について図面に
基づき詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for forming an electrical connection contact according to an embodiment of the present invention and a mounting board using the same will be described in detail with reference to the drawings.

【0008】図1(a)から(c)は本発明の電気的接
続接点の形成方法の第1の実施例を示す工程断面図であ
る。また、図2(a)(b)は本発明の電気接続接点の
形成方法を用いてICチップを基板上に実装する実装工
程断面図を示す。
FIGS. 1 (a) to 1 (c) are process sectional views showing a first embodiment of a method for forming an electrical connection contact according to the present invention. FIGS. 2A and 2B are cross-sectional views showing a mounting process for mounting an IC chip on a substrate using the method for forming an electrical connection contact of the present invention.

【0009】図1において、1は凹部を有する支持基
材、2は低融点合金または金属を主成分とする金属ボー
ル、、3は加熱ヘッド、4はICチップ、5はICチッ
プの電極パッド、6はバンプ(突出接点)、図2(a)
(b)において、7はAu厚膜電極、8はセラミック基
板、9は加熱ヘッドである。
In FIG. 1, 1 is a supporting substrate having a concave portion, 2 is a metal ball mainly composed of a low melting point alloy or metal, 3 is a heating head, 4 is an IC chip, 5 is an electrode pad of the IC chip, 6 is a bump (protruding contact), FIG.
In (b), 7 is an Au thick film electrode, 8 is a ceramic substrate, and 9 is a heating head.

【0010】本発明の第1の実施例では、まず図1
(a)に示すように低融点合金または金属を主成分とす
る金属ボール2を支持基材1の表面に設けられた凹部に
充填する。支持基材1はガラス基板を沸酸水溶液中でエ
ッチングして100μm□深さ50μmの凹部設けたも
のを使用し、低融点合金または金属を主成分とする金属
ボール2としては50〜70μmの粒子からなる共晶半
田ボールを使用した。次に図1(b)に示すように加熱
ヘッド3を用いて支持基材1を230℃に加熱し、充填
された前記金属ボール2を溶融し、図に示すように電極
パッド5を金属ボール2と対向させて圧着すると、図1
(c)に示すように電極パッド6上のみに低融点合金ま
たは金属からなる金属ボール2が転写され、電気的接続
接点6が一括形成される。また、図2(a)(b)に示
すように第1の実施例で得たICチップ4の電極パッド
5上に低融点合金または金属2からなる電気的接続接点
6とセラミック基板8上のAu厚膜電極7とを対向させ
圧着した後、加熱ヘッド9によって突出接点6を再溶融
させて固着すると、ICチップとセラミック基板上のA
u厚膜電極との接続ができる。
In the first embodiment of the present invention, first, FIG.
As shown in (a), a metal ball 2 mainly composed of a low melting point alloy or a metal is filled in a concave portion provided on the surface of a support substrate 1. The supporting substrate 1 is a glass substrate etched in a hydrofluoric acid aqueous solution and provided with a concave portion having a depth of 100 μm □ and a depth of 50 μm. The metal ball 2 mainly composed of a low melting point alloy or metal has a particle size of 50 to 70 μm. A eutectic solder ball consisting of: Next, as shown in FIG. 1 (b), the supporting substrate 1 is heated to 230 ° C. by using a heating head 3 to melt the filled metal balls 2, and as shown in FIG. Fig. 1
As shown in (c), the metal ball 2 made of a low melting point alloy or metal is transferred only on the electrode pad 6, and the electrical connection contact 6 is formed at a time. Also, as shown in FIGS. 2 (a) and 2 (b), the electrical connection contact 6 made of a low melting point alloy or metal 2 and the ceramic substrate 8 on the electrode pad 5 of the IC chip 4 obtained in the first embodiment. After the Au thick-film electrode 7 is opposed to and pressure-bonded, the protruding contact 6 is re-melted and fixed by the heating head 9.
Connection with u-thick film electrode is possible.

【0011】次に本発明の第2の実施例を示す。図3
(a)から(e)は本発明の第2の実施例を示す工程断
面図である。10は2段突起状突出接点であり、図3
(a)から(c)は支持基材1に設けた凹部中の溶融し
た低融点合金または金属ボール2を2段突起状突出接点
上に転写した工程を示す。この2段突起状突出接点10
はワイヤボンディング装置を用いてキャピラリをループ
状の軌跡を描きループ状の2段突起構造とした。図3
(d)から(e)には図3(a)から(c)で得た2段
突起状突出接点を用いた本発明の電気接続接点を使用し
た実装工程断面図を示す。
Next, a second embodiment of the present invention will be described. FIG.
(A) to (e) are process sectional views showing a second embodiment of the present invention. Numeral 10 denotes a two-step protruding contact, which is shown in FIG.
(A) to (c) show a process in which the molten low melting point alloy or metal ball 2 in the concave portion provided in the support base 1 is transferred onto the two-step protruding contact. This two-stage projecting contact 10
Has a loop-shaped two-step protruding structure in which the capillary is drawn in a loop-like locus using a wire bonding apparatus. FIG.
(D) to (e) are cross-sectional views of a mounting process using the electrical connection contact of the present invention using the two-step protruding contact obtained in FIGS. 3 (a) to 3 (c).

【0012】なお、上記実施例においては、電気的接続
接点が形成されたICチップ4をセラミック基板8に実
装した例を示したが、ICチップを実装する基板はセラ
ミック基板に限定されるものではなく、たとえばガラス
エポキシの基板、ガラス基板、およびフレキシブルプリ
ント基板等でもよいことは云うまでもない。低融点合金
または金属を主成分とする金属ボール2としては直径5
0〜70μmの粒子からなる共晶半田ボールを使用した
が、材質としては鉛(Pb)、錫(Sn)、インジウム
(In)を主とする合金またはその単体、あるいはAu
−Sn20%、Au−Sn90%等の低融点合金または
金属でもよく、ボールを加熱して金属ボールを形成した
時点で、前記金属ボールの直径が前記支持基材表面に設
けられた凹部の深さより大であるように調整された金属
ボールであれば何でもよい。さらにICチップ上の電極
パッドと溶融して形成した金属ボールとを対向させて圧
着した場合に超音波加振やスクラブ(微小摺動)を加え
るとICチップと金属ボールとの接続が確実となる。
In the above embodiment, an example is shown in which the IC chip 4 on which the electrical connection contacts are formed is mounted on the ceramic substrate 8, but the substrate on which the IC chip is mounted is not limited to the ceramic substrate. Needless to say, for example, a glass epoxy substrate, a glass substrate, a flexible printed substrate, or the like may be used. The metal ball 2 mainly composed of a low melting point alloy or metal has a diameter of 5
A eutectic solder ball composed of particles having a particle size of 0 to 70 μm was used, but the material was an alloy mainly composed of lead (Pb), tin (Sn), and indium (In) or a simple substance thereof, or Au.
A low melting point alloy or metal such as -Sn20% or Au-Sn90% may be used. When the metal ball is formed by heating the ball, the diameter of the metal ball is larger than the depth of the concave portion provided on the surface of the supporting base material. Any metal ball adjusted to be large may be used. Furthermore, when the electrode pad on the IC chip and the metal ball formed by melting are pressed and pressed against each other, the application of ultrasonic vibration or scrub (small sliding) ensures the connection between the IC chip and the metal ball. .

【0013】また、凹部を有する支持基材としてガラス
を用いたが、他の材質のものでも良く、例えば、ステン
レス板をエッチングし、表面にTiCなどのセラミック
コートをかけて用いることも可能である。さらに金属ボ
ール形成時や、突出接点を再溶融してICチップを基板
上に実装する場合の雰囲気は空気中のみならず、窒素雰
囲気や、水素を用いた還元性雰囲気なども用いることが
できる。また、本実施例ではフラックス塗布は行ってい
ないが、工程の必要段階でフラックス塗布することも何
等限定しない。
Although glass is used as the supporting substrate having the concave portions, other materials may be used. For example, a stainless steel plate may be etched and a surface thereof may be coated with a ceramic coat such as TiC. . Further, the atmosphere for forming the metal ball or for mounting the IC chip on the substrate by re-melting the protruding contacts may be not only in the air but also a nitrogen atmosphere, a reducing atmosphere using hydrogen, or the like. In this embodiment, the flux is not applied, but the application of the flux at a necessary stage of the process is not limited at all.

【0014】[0014]

【発明の効果】以上に説明したように、本発明の電気的
接続接点の形成方法によれば、ICチップの電極パッド
部に電気的接続接点を、選択的に精度よく低融点合金ま
たは金属からなる金属ボールを転写することにより容易
に一括形成することができ、ICチップのセラミック基
板上の電極への接続に限らず、各種基板への電気的接続
において、従来困難な超微細接続に効果を発揮するの
で、きわめて実用価値が高い。また、本発明の電気的接
続接点を用いて接続実装した基板はICチップ周辺のリ
ードもなく実装用基板面積を有効かつ最小に利用するこ
とが可能となる。
As described above, according to the method for forming the electrical connection contact of the present invention, the electrical connection contact is selectively and accurately formed from the low melting point alloy or metal on the electrode pad portion of the IC chip. Can be easily formed at once by transferring metal balls, which is effective not only for the connection of the IC chip to the electrodes on the ceramic substrate, but also for the ultra-fine connection that is difficult in the past for the electrical connection to various substrates. Very practical value because it demonstrates. In addition, the substrate connected and mounted using the electrical connection contact of the present invention can effectively and minimize the area of the mounting substrate without any leads around the IC chip.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例を示す工程断面図FIG. 1 is a process sectional view showing a first embodiment of the present invention.

【図2】本発明の第1の実施例を示す実装工程断面図FIG. 2 is a sectional view showing a mounting process according to the first embodiment of the present invention.

【図3】本発明の第2の実施例を示す工程断面図FIG. 3 is a process sectional view showing a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 支持基材 2 低融点合金または金属を主成分とする金属ボール 3 加熱ヘッド 4 ICチップ 5 ICチップの電極パッド 6 バンプ(突出接点) 7 Au厚膜電極 8 セラミック基板 9 加熱ヘッド 10 2段突起状突出接点 DESCRIPTION OF SYMBOLS 1 Support base material 2 Metal ball which has a low melting point alloy or metal as a main component 3 Heating head 4 IC chip 5 IC chip electrode pad 6 Bump (protruding contact) 7 Au thick film electrode 8 Ceramic substrate 9 Heating head 10 Two-step projection Projecting contact

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平2−30140(JP,A) 特開 昭62−25435(JP,A) 特開 昭64−5039(JP,A) 特開 平2−312240(JP,A) 特開 昭59−148352(JP,A) 竹本正外1名著 高信頼度マイクロソ ルダリング技術 工業調査会(1991−1 −21)P.21 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-2-30140 (JP, A) JP-A-62-2435 (JP, A) JP-A-64-5039 (JP, A) JP-A-2-50 312240 (JP, A) JP-A-59-148352 (JP, A) Masatoshi Takemoto 1 High-reliability micro-soldering technology. twenty one

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 電子部品の端子電極上へ電気的接続接点
を形成する方法であって、金属ボールを支持基材表面に
設けられた凹部に充填する工程、2段突起状の突出接点
が前記電子部品の端子電極群上に形成されており、前記
2段突起状の突出接点を前記金属ボールに合わせて圧着
して前記金属ボールを前記突出接点上に転写する工程よ
り構成されることを特徴とする電気的接続接点の形成方
法。
1. An electrical connection contact on a terminal electrode of an electronic component
A method of forming a filling in a recess provided a metallic ball on the support substrate surface, two-stage protruding protrusion contacts
Is formed on a terminal electrode group of the electronic component,
Electrical connection contacts forming method, wherein a two-stage protruding projecting contact point and pressed to fit the metal ball is composed of the step of transferring the metal ball on the protruding contact.
【請求項2】 金属ボールを支持基材表面に設けられた
凹部に充填する工程、2段突起状の突出接点が電子部品
の端子電極群上に形成されており、前記2段突起状の突
出接点を前記金属ボールに合わせて圧着して前記金属ボ
ールを前記突出接点上に転写する工程、前記金属ボール
を溶融して回路基板上の電極群と接続する工程より構成
されることを特徴とする電子部品の実装方法。
2. A metal ball is provided on a surface of a supporting substrate.
The process of filling recesses with two-stage projecting contacts
Are formed on the terminal electrode group of
The contact point is pressed against the metal ball and the metal
Transferring the metal balls onto the protruding contacts;
Consists of a process of melting and connecting to the electrodes on the circuit board
An electronic component mounting method characterized by being performed.
JP3024426A 1991-02-19 1991-02-19 Method of forming electrical connection contact and method of mounting electronic component Expired - Fee Related JP2650499B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3024426A JP2650499B2 (en) 1991-02-19 1991-02-19 Method of forming electrical connection contact and method of mounting electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3024426A JP2650499B2 (en) 1991-02-19 1991-02-19 Method of forming electrical connection contact and method of mounting electronic component

Publications (2)

Publication Number Publication Date
JPH04263434A JPH04263434A (en) 1992-09-18
JP2650499B2 true JP2650499B2 (en) 1997-09-03

Family

ID=12137827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3024426A Expired - Fee Related JP2650499B2 (en) 1991-02-19 1991-02-19 Method of forming electrical connection contact and method of mounting electronic component

Country Status (1)

Country Link
JP (1) JP2650499B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319810B1 (en) 1994-01-20 2001-11-20 Fujitsu Limited Method for forming solder bumps
US6025258A (en) * 1994-01-20 2000-02-15 Fujitsu Limited Method for fabricating solder bumps by forming solder balls with a solder ball forming member
US6271110B1 (en) 1994-01-20 2001-08-07 Fujitsu Limited Bump-forming method using two plates and electronic device
US6528346B2 (en) 1994-01-20 2003-03-04 Fujitsu Limited Bump-forming method using two plates and electronic device
US5643831A (en) * 1994-01-20 1997-07-01 Fujitsu Limited Process for forming solder balls on a plate having apertures using solder paste and transferring the solder balls to semiconductor device
JP2735038B2 (en) * 1995-06-30 1998-04-02 日本電気株式会社 Bump forming method
DE69738324T2 (en) * 1996-08-27 2008-10-09 Nippon Steel Corp. METHOD OF MANUFACTURING A SEMICONDUCTOR ASSEMBLY WITH LOW MELTING METAL HEEDS
JP3292068B2 (en) * 1996-11-11 2002-06-17 富士通株式会社 Metal bump manufacturing method

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Publication number Priority date Publication date Assignee Title
JPS59148352A (en) * 1983-02-14 1984-08-25 Seiko Instr & Electronics Ltd Electrode formation for semiconductor device
JPS6225435A (en) * 1985-07-25 1987-02-03 Ikeda Jido Kiki Kk Formation of boding bump
JPS645039A (en) * 1987-06-27 1989-01-10 Nippon Denso Co Manufacture of protruding electrode
JPH0230140A (en) * 1988-07-20 1990-01-31 Fujitsu Ltd Structure of solder ball sheet and forming method of solder bump
JPH02312240A (en) * 1989-05-26 1990-12-27 Ricoh Co Ltd Formation of bump

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
竹本正外1名著 高信頼度マイクロソルダリング技術 工業調査会(1991−1−21)P.21

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