JPH0695468B2 - Method of forming electrical connection contact - Google Patents
Method of forming electrical connection contactInfo
- Publication number
- JPH0695468B2 JPH0695468B2 JP62140264A JP14026487A JPH0695468B2 JP H0695468 B2 JPH0695468 B2 JP H0695468B2 JP 62140264 A JP62140264 A JP 62140264A JP 14026487 A JP14026487 A JP 14026487A JP H0695468 B2 JPH0695468 B2 JP H0695468B2
- Authority
- JP
- Japan
- Prior art keywords
- electrical connection
- contact
- forming
- connection contact
- protruding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、ICチップに代表される電気マイクロ回路素子
を基板上の端子電極群と接続するために用いる電気的接
続接点の形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an electrical connection contact used for connecting an electric microcircuit element represented by an IC chip to a terminal electrode group on a substrate. .
従来の技術 従来電気マイクロ回路素子の接点領域と回路基板上の導
体端子部との接続には、半田付けがよく利用されてい
た。近年、例えばICフラットパッケージ等の小型化と接
続端子の増加により接続端子間、いわゆるピッチ間隔が
次第に狭くなり、従来の半田付け技術で対処することが
困難になって来た。又、最近では電卓、電子時計あるい
は液晶ディスプレイ等にあっては裸のICチップをガラス
基板上の電極に直付けして実装面積の効率的使用を図ろ
うとする動きがあり、半田付けに代わる有効かつ微細な
電気的接続手段が強く望まれている。裸のICチップを基
板の電極と電気的に接続する方法としては、メッキ技術
によりICチップの電極パッド上に形成した突出接点（バ
ンプ）を用いたものが知られている。既知の突出接点の
形成方法は、最初にIC基板上の電極パッド上に、Cr、C
u、Au等の金属蒸着膜部を形成し、更にレジストをかけ
て、Cr、Au等の金属メッキ部を形成した後、余分なレジ
ストと金属蒸着膜を除去して、突出接点を形成するとい
うものである。2. Description of the Related Art Conventionally, soldering has been often used to connect a contact region of an electric microcircuit element and a conductor terminal portion on a circuit board. In recent years, for example, IC flat packages have been downsized and the number of connection terminals has increased, so that the so-called pitch interval between the connection terminals has become gradually narrower, and it has become difficult to cope with the problems by the conventional soldering technique. In addition, recently, in calculators, electronic watches, liquid crystal displays, etc., there is a movement to directly attach a bare IC chip to an electrode on a glass substrate to use the mounting area efficiently, which is an effective alternative to soldering. Moreover, a fine electrical connection means is strongly desired. As a method for electrically connecting a bare IC chip to an electrode on a substrate, a method using a protruding contact (bump) formed on an electrode pad of the IC chip by a plating technique is known. A known method of forming protruding contacts is to first form Cr, C on the electrode pads on the IC substrate.
After forming a metal vapor deposition film part such as u, Au, etc., further applying a resist to form a metal plating part such as Cr, Au, etc., removing the excess resist and metal vapor deposition film to form a protruding contact It is a thing.
発明が解決しようとする問題点 しかしながらかかる方法においては、突出接点の形成方
法はかなり複雑で、多数の処理工程及び高度のエッチン
グ、メッキ技術が必要であり、加えてメッキ精度や形成
コストなどの点から突出接点の高さにも一定の限界を生
ずるものであった。However, in such a method, the method of forming the protruding contact is quite complicated and requires a large number of processing steps and high-level etching and plating techniques. Therefore, the height of the protruding contact also has a certain limit.
本発明は上記問題点に鑑みてなされたものであり、その
目的とする所は、極めて簡単な工程により高い突出部を
備えた電気的接続接点を容易に形成する方法を提供する
ものである。The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for easily forming an electrical connection contact having a high protrusion by an extremely simple process.
問題点を解決するための手段 上記問題点を解決するために、本発明の電気的接続接点
の形成方法は、半導体チップの入出力電極パッド上にボ
ールボンディング法を用いてボールを固着して、突起状
接点の底部を形成し、この後更にその上部に金属ワイヤ
からなるループ状や逆Ｕ字型の突起状接点の頂部を一体
に形成することにより２段状に突出した電気的接続接点
を実現しようとするものである。Means for Solving the Problems In order to solve the above problems, a method for forming an electrical connection contact of the present invention is to fix a ball on the input / output electrode pad of a semiconductor chip using a ball bonding method, By forming the bottom of the protruding contact and then further integrally forming the top of the loop-shaped or inverted U-shaped protruding contact made of a metal wire on top of it, an electrical connection contact protruding in two steps is formed. It is something that will be realized.
作用 しかして本発明の上記した方法によれば、ボールボンデ
ィング法を用いて突起状接点の底部の上部に金属ワイヤ
からなる頂部を形成するという簡単な工程によることか
ら高い突出部を備えた電気的接続接点を容易に形成でき
ることとなる。Operation However, according to the above-described method of the present invention, since the ball bonding method is used to form the top portion made of the metal wire on the upper portion of the bottom portion of the protruding contact, the electrical process with the high protrusion is performed. The connection contact can be easily formed.
実施例 以下本発明の一実施例の電気的接続接点の形成方法につ
いて図面を参照しながら説明する。Embodiment A method of forming an electrical connection contact according to an embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例における電気的接続接点の形
成法によって形成された電気的接続接点を示す断面図で
ある。第２図（ａ）、（ｂ）、（ｃ）、（ｄ）、（ｅ）
は、本発明の一実施例における電気的接続接点の形成法
を工程順に図示した断面図である。第３図は公知のメッ
キ法により形成した従来の突起状接点を示す断面図であ
る。FIG. 1 is a sectional view showing an electrical connection contact formed by a method of forming an electrical connection contact according to an embodiment of the present invention. 2 (a), (b), (c), (d), (e)
FIG. 4A is a cross-sectional view illustrating a method of forming an electrical connection contact according to an embodiment of the present invention in process order. FIG. 3 is a sectional view showing a conventional protruding contact formed by a known plating method.
第１図、第２図、第３図において、１は半導体チップ、
２は入出力電極パッド、３はキャピラリ、４は孔、５は
金線、６はボール、７は突起状接点の底部、８は突起状
接点の頂部、９はメッキ技術により形成した突起状接点
である。1, 2, and 3, 1 is a semiconductor chip,
Reference numeral 2 is an input / output electrode pad, 3 is a capillary, 4 is a hole, 5 is a gold wire, 6 is a ball, 7 is a bottom of a protruding contact, 8 is a top of the protruding contact, and 9 is a protruding contact formed by a plating technique. Is.
以上のような電気的接続接点の形成方法について以下第
１図、第２図、第３図を用いて説明する。A method of forming the above-described electrical connection contact will be described below with reference to FIGS. 1, 2, and 3.
まず第２図（ａ）に示すようにセラミック材料や人工ル
ビーなどにより作られたキャピラリ３の孔４に25μｍφ
の金線５を通し、その先端にガス炎や電気的放電などの
熱エネルギーにより金線５の径の約２〜３倍の径にボー
ルを形成する。First, as shown in FIG. 2 (a), 25 μmφ is formed in the hole 4 of the capillary 3 made of a ceramic material or artificial ruby.
Through the gold wire 5, and a ball is formed at its tip with a diameter of about 2 to 3 times the diameter of the gold wire 5 by thermal energy such as gas flame or electric discharge.
次に第２図（ｂ）に示すように前記金線５の先端に形成
したボール６をキャピラリ３を介して半導体チップ１の
入出力電極パッド２に当接し熱圧着や超音波振動によっ
て固着させて外径が80〜100μｍφ程度で、高さが35〜4
5μmt程度の突起状接点の底部７を形成する。Next, as shown in FIG. 2B, the ball 6 formed at the tip of the gold wire 5 is brought into contact with the input / output electrode pad 2 of the semiconductor chip 1 through the capillary 3 and fixed by thermocompression bonding or ultrasonic vibration. Outer diameter is about 80-100 μmφ and height is 35-4
The bottom portion 7 of the protruding contact having a size of about 5 μmt is formed.
次に第２図（ｃ）に示すように前記した突起状接点の底
部７とつながっている金線５をキャピラリ３の孔４に通
した状態で、キャピラリ３をループ状に移動させ突起状
接点の底部７の上部に高さが65〜80μmt程度の頂部８を
形成する。その方法としては第２図（ｄ）のようにキャ
ピラリ３を前記突起状接点の底部７の上方で垂直方向に
ループ状軌道を描いて移動した後、第２図（ｅ）のよう
にキャピラリ３を降下させて金線を切欠し形成するもの
で、リング状や逆Ｕ字型の形状の突起状接点の頂部８が
形成できる。Next, as shown in FIG. 2 (c), while the gold wire 5 connected to the bottom portion 7 of the protruding contact is passed through the hole 4 of the capillary 3, the capillary 3 is moved in a loop shape so that the protruding contact is formed. A top 8 having a height of about 65 to 80 μmt is formed on the bottom 7 of the. As a method thereof, as shown in FIG. 2 (d), the capillary 3 is moved in a vertical direction above the bottom portion 7 of the protruding contact in a loop-shaped orbit, and then the capillary 3 is moved as shown in FIG. 2 (e). And the gold wire is cut out to form the top portion 8 of the ring-shaped or inverted U-shaped protruding contact.
上記方法によって形成した第１図に示す２段突出形状の
電気的接続接点は、外径が80〜100μｍφ程度で全体の
高さは100〜125μmt程度のものが得られた。The two-step protruding electrical connection contact shown in FIG. 1 formed by the above method had an outer diameter of about 80 to 100 μmφ and an overall height of about 100 to 125 μmt.
なお実施例では金属ワイヤの材質を金としたが、その材
質は金に限定されるものではなく、ボールボンディング
可能なものであればアルミ、銅なども使用することがで
きる。又その線径についても形成する突起状接点の外径
や高さなどの目的に応じて選定することが可能である。
又形成する突起状接点の形状についても底部と頂部が一
体となった２段突出形状であれば特に制限を加えるもの
ではない。In the embodiment, the material of the metal wire is gold, but the material is not limited to gold, and aluminum, copper or the like may be used as long as it is ball-bondable. The wire diameter can also be selected according to the purpose such as the outer diameter or height of the protruding contact to be formed.
The shape of the protruding contact formed is not particularly limited as long as it has a two-step protruding shape in which the bottom and the top are integrated.
発明の効果 以上のように本発明の電気的接続接点の形成方法によれ
ばICチップの電極パッド部に電気的接続接点を従来のボ
ールボンディング法を用いて形成するので、既知のメッ
キ法に比べて繁雑な工程が不要となり極めて簡単に形成
することができる。As described above, according to the method for forming the electrical connection contact of the present invention, the electrical connection contact is formed on the electrode pad portion of the IC chip by using the conventional ball bonding method. Therefore, complicated steps are not required, and it can be formed extremely easily.
加えて高い突出部を備えた電気的接続接点の形成が容易
となり実用上の価値が高い。In addition, it is easy to form an electrical connection contact having a high protrusion, which is of high practical value.
第１図は本発明の一実施例における電気的接続接点の断
面図、第２図（ａ）、（ｂ）、（ｃ）、（ｄ）、（ｅ）
は第１図の電気的接続接点の形成法を工程順に示し説明
をする断面図、第３図は公知のメッキ法により形成した
従来の突起状接点を示す断面図である。 １……半導体チップ、２……入出力電極パッド、３……
キャピラリ、４……孔、５……金線、６……ボール、７
……突起状接点の底部、８……突起状接点の頂部、９…
…メッキ技術により形成した突起状接点。FIG. 1 is a sectional view of an electrical connection contact in one embodiment of the present invention, and FIGS. 2 (a), (b), (c), (d) and (e).
FIG. 3 is a cross-sectional view showing the method of forming the electrical connection contact of FIG. 1 in order of process and description, and FIG. 3 is a cross-sectional view showing a conventional protruding contact formed by a known plating method. 1 ... semiconductor chip, 2 ... input / output electrode pad, 3 ...
Capillary, 4 ... Hole, 5 ... Gold wire, 6 ... Ball, 7
... Bottom of protruding contact, 8 ... Top of protruding contact, 9 ...
... Protruded contacts formed by plating technology.
Claims (1)
的接続接点を形成するに当り、金属ワイヤの先端に熱エ
ネルギーによってボールを形成する工程と、金属ワイヤ
の先端に形成されたボールをキャピラリにより半導体チ
ップの入出力電極パッド上に圧着して突起状接点の底部
を形成する工程と、前記突起状接点の底部の上方でキャ
ピラリをループ状軌道を持って移動したのち金属ワイヤ
を切断して、金属ワイヤによる、リング状や逆Ｕ字型の
突起状接点の頂部を形成する工程とを具備することを特
徴とする電気的接続接点の形成方法。1. A step of forming a ball at the tip of a metal wire by thermal energy in forming an electrical connection contact on an input / output electrode pad of a semiconductor chip, and a capillary formed at the tip of the metal wire. The step of forming the bottom of the protruding contact by crimping on the input / output electrode pad of the semiconductor chip, and moving the capillary with a loop-shaped trajectory above the bottom of the protruding contact and then cutting the metal wire. Forming a ring-shaped or inverted U-shaped projecting contact top portion with a metal wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62140264A JPH0695468B2 (en) | 1987-06-04 | 1987-06-04 | Method of forming electrical connection contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62140264A JPH0695468B2 (en) | 1987-06-04 | 1987-06-04 | Method of forming electrical connection contact |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63304587A JPS63304587A (en) | 1988-12-12 |
| JPH0695468B2 true JPH0695468B2 (en) | 1994-11-24 |
Family
ID=15264733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62140264A Expired - Lifetime JPH0695468B2 (en) | 1987-06-04 | 1987-06-04 | Method of forming electrical connection contact |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0695468B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5172851A (en) * | 1990-09-20 | 1992-12-22 | Matsushita Electronics Corporation | Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device |
| JP2769255B2 (en) * | 1990-11-05 | 1998-06-25 | 松下電子工業株式会社 | Imaging device and method of manufacturing the same |
| JP3349886B2 (en) | 1996-04-18 | 2002-11-25 | 松下電器産業株式会社 | Method for forming two-stage protrusion-shaped bump of semiconductor device |
| JPH1126631A (en) | 1997-07-02 | 1999-01-29 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
| JP3913134B2 (en) | 2002-08-08 | 2007-05-09 | 株式会社カイジョー | Bump forming method and bump |
-
1987
- 1987-06-04 JP JP62140264A patent/JPH0695468B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63304587A (en) | 1988-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
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