JPH04342139A - Formation method for electric connection contact and manufacture of mounting board - Google Patents
Formation method for electric connection contact and manufacture of mounting boardInfo
- Publication number
- JPH04342139A JPH04342139A JP3114392A JP11439291A JPH04342139A JP H04342139 A JPH04342139 A JP H04342139A JP 3114392 A JP3114392 A JP 3114392A JP 11439291 A JP11439291 A JP 11439291A JP H04342139 A JPH04342139 A JP H04342139A
- Authority
- JP
- Japan
- Prior art keywords
- metal paste
- metal
- terminal electrode
- recess
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000002184 metal Substances 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 28
- 230000008018 melting Effects 0.000 claims abstract description 22
- 238000002844 melting Methods 0.000 claims abstract description 22
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 18
- 239000000956 alloy Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 3
- 238000005201 scrubbing Methods 0.000 claims description 2
- 238000002788 crimping Methods 0.000 claims 5
- 239000010931 gold Substances 0.000 abstract description 12
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002075 main ingredient Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、ＩＣチップに代表され
るチップ状の電子部品または素子を基板上の端子電極群
と接続するために、微細な電気的接続接点を素子の端子
電極上のみに正確に形成する電気的接続接点の形成法、
および実装基板の製造方法に関するものである。[Industrial Application Field] In order to connect chip-shaped electronic components or elements, such as IC chips, to a group of terminal electrodes on a substrate, the present invention provides minute electrical connection contacts only on the terminal electrodes of the elements. a method of forming electrical connection contacts accurately;
and a method for manufacturing a mounting board.
【０００２】0002
【従来の技術】従来、電子部品の接続端子と基板上の回
路パターン端子との接続には半田がよく利用されていた
が、近年、たとえばＩＣフラットパッケージ等の小型化
と、接続端子間、いわゆるピッチ間隔が次第に狭くなり
、従来のクリーム半田のスクリーン印刷による半田付け
技術で対処することが次第に困難になってきた。[Prior Art] In the past, solder was often used to connect the connection terminals of electronic components and the circuit pattern terminals on the board, but in recent years, with the miniaturization of IC flat packages, etc. As pitch spacing has become increasingly narrower, it has become increasingly difficult to cope with conventional cream solder screen printing soldering techniques.
【０００３】また、最近では電卓、電子時計あるいは液
晶ディスプレイなどにあっては、裸のＩＣチップをガラ
ス基板上の電極に直付けして実装面積の効率的利用を図
ろうとする動きがあり、有効かつ微細な電気的接続手段
が強く望まれている。裸のＩＣチップを基板の電極と電
気的に接続する方法としては、フリップチップ実装と呼
ばれる実装方法があり、これはメッキ技術によりＩＣチ
ップの電極パッド上に形成した突出接点（バンプ）を用
いて行うものである。[0003] Recently, there has also been a movement toward efficient use of mounting area by directly attaching bare IC chips to electrodes on glass substrates for calculators, electronic watches, liquid crystal displays, etc. Moreover, a fine electrical connection means is strongly desired. There is a mounting method called flip-chip mounting that electrically connects a bare IC chip to the electrodes of the board, and this uses protruding contacts (bumps) formed on the electrode pads of the IC chip using plating technology. It is something to do.
【０００４】既知の突出接点の形成方法は、最初にＩＣ
素子上の電極パッド上に、クロム（Ｃｒ）、銅（Ｃｕ）
、金（Ａｕ）等の金属メッキ部を形成した後、余分なレ
ジストと金属蒸着膜を除去して、突出接点を形成すると
いうものである。また、別の方法としてはメッキされた
Ａｕバンプを印刷法で半田を介して接続することが提案
されている。[0004] Known methods of forming protruding contacts include first forming an IC.
Chromium (Cr) and copper (Cu) are placed on the electrode pads on the element.
After forming a metal plating portion such as gold (Au), excess resist and metal vapor deposition film are removed to form a protruding contact. Furthermore, as another method, it has been proposed to connect plated Au bumps via solder using a printing method.
【０００５】[0005]
【発明が解決しようとする課題】しかしながらメッキ技
術を用いたかかる方法においては、突出接点の形成方法
ならびにＩＣチップの実装はかなり複雑で、多数の処理
工程および高度のエッチング、メッキ技術が必要であっ
た。また、従来のクリーム半田のスクリーン印刷による
半田付け技術では半田供給の限界が０．３ｍｍピッチで
あり、さらに微細な接続は不可能であった。[Problems to be Solved by the Invention] However, in such a method using plating technology, the method of forming the protruding contacts and the mounting of the IC chip are quite complicated, requiring a large number of processing steps and advanced etching and plating technology. Ta. Further, in the conventional soldering technology using screen printing of cream solder, the solder supply limit is 0.3 mm pitch, and even finer connections are impossible.
【０００６】本発明は上記問題点に鑑みてなされたもの
であり、その目的とするところは、微細かつ密に電子部
品または素子の電極パッドと基板上の電極群とを信頼性
よく接続するために、素子上の電極群、あるいは電子部
品、たとえばＩＣチップの電極パッド上に電気的接続接
点を簡易に、かつ、精度よく形成し、さらにはＩＣチッ
プ実装に不可欠な微細接続を提案することにある。The present invention has been made in view of the above-mentioned problems, and its purpose is to connect electrode pads of an electronic component or element and a group of electrodes on a substrate with high reliability in a fine and dense manner. In addition, we aim to easily and accurately form electrical connection contacts on electrode groups on devices or on electrode pads of electronic components, such as IC chips, and to propose micro-connections that are essential for IC chip mounting. be.
【０００７】[0007]
【課題を解決するための手段】本発明は上記問題点を解
決するため、微細ピッチ、微細端子電極が形成されてい
る素子の微細端子電極上への電気的接続接点の形成にお
いて、低融点合金または金属を主成分とする金属ペース
トを支持基材表面に設けられた凹部に充填する。 前
記素子の微細端子電極面を前記凹部中の充填した前記金
属ペーストに合わせて圧着し、前記凹部に充填された金
属ペーストを微細端子電極上に転写することにより電気
的接続接点の形成を実現しようとするものである。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention uses a low melting point alloy in forming electrical connection contacts on fine terminal electrodes of an element in which fine pitch and fine terminal electrodes are formed. Alternatively, a metal paste containing metal as a main component is filled into the recesses provided on the surface of the support base material. The surface of the fine terminal electrode of the element is pressed against the metal paste filled in the recess, and the metal paste filled in the recess is transferred onto the fine terminal electrode to form an electrical connection contact. That is.
【０００８】[0008]
【作用】本発明の上記した方法によれば、素子上の微細
端子電極上に簡易に接続接点を信頼性よく形成すること
ができ、かつ、上記接続接点にのみ選択的に金属ペース
トあるいは溶融金属を定量均一に転写することができ、
簡易で信頼性の高い電気的接続接点が形成できる。[Operation] According to the above-described method of the present invention, connecting contacts can be easily and reliably formed on the fine terminal electrodes on the element, and only the connecting contacts can be selectively coated with metal paste or molten metal. can be transferred quantitatively and uniformly,
A simple and highly reliable electrical connection contact can be formed.
【０００９】[0009]
【実施例】以下、本発明の一実施例の電気的接続接点の
形成方法ならびにこれを用いた実装基板について図面に
基づき詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for forming an electrical connection contact according to an embodiment of the present invention and a mounting board using the same will be described in detail below with reference to the drawings.
【００１０】（図１（ａ））から（図１（ｄ））は本発
明の電気的接続接点の形成方法の第１の実施例を示す工
程断面図である。また、（図２）は本発明の電気接続接
点の形成方法を用いてＩＣチップを基板上に実装する実
装工程断面図を示す。FIGS. 1(a) to 1(d) are process cross-sectional views showing a first embodiment of the method for forming an electrical connection contact of the present invention. Moreover, (FIG. 2) shows a sectional view of a mounting process in which an IC chip is mounted on a substrate using the method for forming an electrical connection contact of the present invention.
【００１１】（図１）において、１は凹部を有する支持
基材、２は低融点合金または金属を主成分とする金属ペ
ースト、３はスキージ、４はＩＣチップ、５はＩＣチッ
プの電極パッド、６はバンプ（突出接点）、（図２）に
おいて、７はＡｕ厚膜電極、８はセラミック基板である
。In FIG. 1, 1 is a supporting base material having a recessed part, 2 is a metal paste whose main component is a low melting point alloy or metal, 3 is a squeegee, 4 is an IC chip, 5 is an electrode pad of the IC chip, In FIG. 2, 6 is a bump (protruding contact), 7 is an Au thick film electrode, and 8 is a ceramic substrate.
【００１２】本発明の第１の実施例では、まず（図１（
ａ）、（ｂ））に示すように低融点合金または金属を主
成分とする金属ペースト２を支持基材１の表面に設けら
れた凹部にスキージを摺動させ充填する。支持基材１は
ガラス基板を沸酸水溶液中でエッチングして５０μｍ□
深さ２０μｍの凹部を設けたものを使用し、低融点合金
または金属を主成分とする金属ペースト２としては、重
量平均分子量７００００のアクリル樹脂をブチルカルビ
トールアセテート中に溶解したビヒクル中に平均粒径２
μｍのＡｕ粉末を分散させたものを用いた。In the first embodiment of the present invention, first (FIG. 1(
As shown in a) and (b)), a squeegee is slid to fill the recesses provided on the surface of the support base material 1 with a metal paste 2 whose main component is a low melting point alloy or metal. Supporting base material 1 is made by etching a glass substrate in a hydrofluoric acid aqueous solution to a thickness of 50 μm□
A paste with a recess of 20 μm in depth was used, and the metal paste 2 mainly composed of a low melting point alloy or metal was prepared by dissolving an acrylic resin with a weight average molecular weight of 70,000 in a vehicle prepared by dissolving an acrylic resin in butyl carbitol acetate. Diameter 2
A material in which μm-sized Au powder was dispersed was used.
【００１３】次にＩＣ素子１上の５０μｍ□の電極パッ
ド５部を充填された金属ペースト２ｄと対向させて圧着
すると、（図１（ｄ））に示すように電極パッド部５に
金属ペースト２が転写され、電気的接続接点が形成され
る。この時ＩＣチップの電極パッド上にはＡｕを蒸着し
て用いた。Next, when the electrode pad 5 portion of 50 μm square on the IC element 1 is pressed against the filled metal paste 2d, the metal paste 2 is attached to the electrode pad portion 5 as shown in FIG. 1(d). is transferred to form electrical connection contacts. At this time, Au was deposited on the electrode pads of the IC chip.
【００１４】また、（図２）に示すように第１の実施例
で得たＩＣチップ４の電極パッド５上に金属ペースト２
からなる電気的接続接点６とセラミック基板８上のＡｕ
厚膜電極７とを対向させ圧着すると、ＩＣチップとセラ
ミック基板上のＡｕ厚膜電極との接続ができる。Further, as shown in FIG. 2, a metal paste 2 is applied on the electrode pads 5 of the IC chip 4 obtained in the first embodiment.
Au on the ceramic substrate 8 and the electrical connection contact 6 consisting of
By pressing the thick film electrodes 7 facing each other, the IC chip and the Au thick film electrodes on the ceramic substrate can be connected.
【００１５】次に本発明の第２の実施例を示す。（図３
）は本発明の第２の実施例を示す工程断面図である。
９は２段突起状突出接点であり、（図３（ａ）から（ｃ
））は、実施例１と同様に、支持基材１に設けた凹部中
の金属ペースト２ｂを２段突起状突出接点上に転写する
工程を示す。この２段突起状突出接点９はワイヤボンデ
ィング装置を用いてキャピラリをループ状の軌跡を描き
ループ状の２段突起構造とした。Next, a second embodiment of the present invention will be described. (Figure 3
) is a process sectional view showing a second embodiment of the present invention. 9 is a two-stage protruding contact (Figs. 3(a) to (c)
)) shows the step of transferring the metal paste 2b in the recess provided in the support base material 1 onto the two-stage protruding contact point, as in Example 1. This two-step protruding contact 9 was formed into a loop-like two-step protrusion structure by drawing a loop-like locus on the capillary using a wire bonding device.
【００１６】（図３（ｄ）から（ｅ））には（図３（ａ
）から（ｃ））で得た２段突起状突出接点上に金属ペー
ストを転写した本発明の電気接続接点を使用した実装工
程断面図である。[0016] In (Fig. 3(d) to (e)), (Fig. 3(a)
FIG. 4 is a cross-sectional view of a mounting process using the electrical connection contact of the present invention in which metal paste is transferred onto the two-stage protruding contact obtained in steps (a) to (c)).
【００１７】次に本発明の第３の実施例を示す。（図４
（ａ）から（ｄ））は本発明の電気的接続接点の形成方
法の第３の実施例を示す工程断面図である。本発明の第
３の実施例では、第１の実施例と同様に、まず低融点合
金または金属を主成分とする金属ペースト２を支持基材
１の表面に設けられた凹部にスキージを摺動させ充填す
る。支持基材１は実施例１と同じものを使用し、低融点
合金または金属を主成分とする金属ペースト２としては
６００メッシュ以下の粒子からなる共晶半田ペーストを
使用した。次にＩＣ素子１上の５０μｍ□の電極パッド
５部を充填された金属ペースト２ｂと対向させて圧着し
、次に支持基材１を加熱ヘッド１０で２３０℃に加熱し
、充填された前記金属ペースト２ｂ中のハンダを溶融す
る。このとき、ハンダは凝集力により球形になろうとし
、電極パッド部５と接触する。こうして電極パッド部５
に電気的接続接点が形成される。Next, a third embodiment of the present invention will be described. (Figure 4
(a) to (d)) are process sectional views showing a third embodiment of the method for forming an electrical connection contact of the present invention. In the third embodiment of the present invention, as in the first embodiment, first, a metal paste 2 mainly composed of a low melting point alloy or metal is applied by sliding a squeegee into the recess provided on the surface of the support base material 1. Let it fill. The support base material 1 used was the same as in Example 1, and the metal paste 2 whose main component was a low melting point alloy or metal was a eutectic solder paste consisting of particles of 600 mesh or less. Next, 5 portions of electrode pads of 50 μm square on the IC element 1 are pressed against the filled metal paste 2b, and then the supporting base material 1 is heated to 230° C. with the heating head 10, and the filled metal paste 2b is pressed. Melt the solder in paste 2b. At this time, the solder tends to become spherical due to cohesive force and comes into contact with the electrode pad portion 5 . In this way, the electrode pad portion 5
An electrical connection contact is formed at.
【００１８】なお、上記実施例においては、電気的接続
接点が形成されたＩＣチップ４をセラミック基板８に実
装した例を示したが、ＩＣチップを実装する基板はセラ
ミック基板に限定されるものではなく、たとえばガラス
エポキシの基板、ガラス基板、およびフレキシブルプリ
ント基板等でもよいことは云うまでもない。実施例１で
は、アクリル樹脂を用いたＡｕペーストを用いたが、こ
れに限定されるものではなく、接続を可能とする樹脂系
金属ペーストであれば何でもよい。In the above embodiment, an example was shown in which the IC chip 4 on which electrical connection contacts were formed was mounted on the ceramic substrate 8, but the substrate on which the IC chip is mounted is not limited to a ceramic substrate. Needless to say, for example, a glass epoxy substrate, a glass substrate, a flexible printed circuit board, etc. may be used. In Example 1, an Au paste using an acrylic resin was used, but the present invention is not limited to this, and any resin-based metal paste that enables connection may be used.
【００１９】また、６０℃前後の温度を駆けることによ
り樹脂系金属ペーストの転写性を向上させることも可能
である。また、実施例２でも実施例３と同様な溶融可能
なペーストを用いることもできる。[0019] Furthermore, it is also possible to improve the transferability of the resin-based metal paste by increasing the temperature to around 60°C. Further, in the second embodiment, a meltable paste similar to that in the third embodiment can also be used.
【００２０】さらに、実施例３では、低融点合金または
金属を主成分とする金属ペースト２として６００メッシ
ュ以下の粒子からなる共晶半田ペーストを使用したが、
材質としては鉛（Ｐｂ）、錫（Ｓｎ）、インジウム（Ｉ
ｎ）を主とする合金またはその単体、たとえばＰｂ６２
−Ｓｎ３６−Ａｇ２、あるいはＡｕ−Ｓｎ２０％、Ａｕ
−Ｓｎ９０％等の低融点合金または金属でもよく、ペー
ストを加熱して金属ボールを形成した時点で、前記金属
ボールの直径が前記支持基材表面に設けられた凹部の深
さより大となるように組成調整された金属ペーストであ
れば何でもよい。Furthermore, in Example 3, a eutectic solder paste consisting of particles of 600 mesh or less was used as the metal paste 2 whose main component was a low melting point alloy or metal.
Materials include lead (Pb), tin (Sn), and indium (I).
n) or its simple substance, such as Pb62
-Sn36-Ag2, or Au-Sn20%, Au
- It may be a low melting point alloy or metal such as 90% Sn, and when the paste is heated to form a metal ball, the diameter of the metal ball is larger than the depth of the recess provided on the surface of the support base material. Any metal paste whose composition has been adjusted may be used.
【００２１】さらにＩＣチップ上の電極パッドと支持基
材の凹部中の金属ペーストとを対向させて圧着加熱した
場合に超音波加振やスクラブ（微小摺動）を加えるとＩ
Ｃチップと金属ペーストとの接触が確実となり、電極パ
ッドがアルミであっても接続接点の形成が可能である。Furthermore, when the electrode pads on the IC chip and the metal paste in the recesses of the supporting base material are pressed and heated while facing each other, if ultrasonic vibration or scrubbing (micro-sliding) is applied, the I
The contact between the C chip and the metal paste is ensured, and connection contacts can be formed even if the electrode pad is made of aluminum.
【００２２】また、凹部を有する支持基材としてガラス
を用いたが、他の材質のものでも良く、例えば、ステン
レス板をエッチングし、表面にＴｉＣなどのセラミック
コートをかけて用いることも可能である。Further, although glass is used as the supporting base material having the recessed portions, other materials may be used. For example, it is also possible to use a stainless steel plate etched and coated with a ceramic coating such as TiC on the surface. .
【００２３】さらに実施例３における金属溶融時や、突
出接点を再溶融してＩＣチップを基板上に実装する場合
の雰囲気は空気中のみならず、窒素雰囲気や、水素を用
いた還元性雰囲気なども用いることができる。また、本
実施例３ではフラックス塗布は行っていないが、工程の
必要段階で適宜フラックス塗布することも何等限定しな
い。Furthermore, the atmosphere during the metal melting in Example 3 and when the protruding contacts are remelted and the IC chip is mounted on the substrate is not only air but also a nitrogen atmosphere, a reducing atmosphere using hydrogen, etc. can also be used. In addition, although flux coating is not performed in this Example 3, there is no limitation in any way that flux coating may be applied at a necessary stage of the process.
【００２４】[0024]
【発明の効果】以上に説明したように、本発明の電気的
接続接点の形成方法によれば、ＩＣチップの電極パッド
部に電気的接続接点を、選択的に精度よく低融点合金ま
たは金属からなる金属ペーストを転写することにより容
易に一括形成することができ、ＩＣチップのセラミック
基板上の電極への接続に限らず、各種基板への電気的接
続において、従来困難な超微細接続に効果を発揮するの
で、きわめて実用価値が高い。また、本発明の電気的接
続接点を用いて接続実装した基板はＩＣチップ周辺のリ
ードもなく実装用基板面積を有効かつ最小に利用するこ
とが可能となる。As explained above, according to the method for forming electrical connection contacts of the present invention, electrical connection contacts can be formed selectively and precisely from low melting point alloys or metals on the electrode pads of IC chips. It can be easily formed all at once by transferring a metal paste of It has extremely high practical value. Moreover, the board mounted using the electrical connection contact of the present invention has no leads around the IC chip, and the mounting board area can be effectively and minimized.
【図１】本発明の第１の実施例を示す工程断面図[Fig. 1] Process cross-sectional diagram showing the first embodiment of the present invention
【図２
】本発明の第１の実施例を示す実装工程断面図[Figure 2
】Cross-sectional view of the mounting process showing the first embodiment of the present invention
【図３】
本発明の第２の実施例を示す工程断面図[Figure 3]
Process cross-sectional diagram showing the second embodiment of the present invention
【図４】本発明
の第３の実施例を示す工程断面図[Fig. 4] Process sectional view showing the third embodiment of the present invention
１ 支持基材
２ 低融点合金または金属を主成分とする金属ペース
ト３ スキージ
４ ＩＣチップ
５ ＩＣチップの電極パッド
６ 突出電極（バンプ）
７ Ａｕ厚膜電極
８ セラミック基板
９ ２段突起状突出接点
１０ 加熱ヘッド1 Support base material 2 Metal paste mainly composed of a low melting point alloy or metal 3 Squeegee 4 IC chip 5 Electrode pad of IC chip 6 Projecting electrode (bump) 7 Au thick film electrode 8 Ceramic substrate 9 Two-stage projecting contact 10 heating head
Claims (12)
金属ペーストを支持基材表面に設けられた凹部に充填す
る工程、素子の微細端子電極面を前記凹部中の前記金属
ペーストに合わせて圧着し、前記金属ペーストを前記微
細端子電極面上に転写する工程からなることを特徴とす
る電気的接続接点の形成方法。1. A step of filling a recess provided on the surface of a supporting base material with a metal paste containing a low melting point alloy or metal as a main component, and crimping the fine terminal electrode surface of the element to the metal paste in the recess. A method for forming an electrical connection contact, comprising the step of transferring the metal paste onto the surface of the fine terminal electrode.
材の少なくとも１種を加熱しつつ、前記素子上微細端子
電極面を前記凹部中に充填した金属ペーストに合わせて
圧着し、前記金属ペーストを前記微細端子電極上に転写
する工程からなることを特徴とする請求項１記載の電気
的接続接点の形成方法。2. While heating at least one of an element having a group of fine terminal electrodes and a supporting base material, the surface of the fine terminal electrodes on the element is pressed against the metal paste filled in the recess, and the metal paste is heated. 2. The method of forming an electrical connection contact according to claim 1, further comprising the step of transferring the fine terminal electrode onto the fine terminal electrode.
充填した金属ペーストに合わせて圧着加熱しつつ、超音
波加振、スクラブ（微小摺動）の少なくとも１種を加え
ることを特徴とする請求項２記載の電気的接続接点の形
成方法。3. At least one of ultrasonic vibration and scrubbing (micro-sliding) is applied while pressing and heating the fine terminal electrode surface of the element with the metal paste filled in the recess. The method of forming an electrical connection contact according to claim 2.
部に充填された金属ペースト中の低融点合金または金属
の融点より高いことを特徴とする請求項２記載の電気的
接続接点の形成方法。4. The method of forming an electrical connection contact according to claim 2, wherein the heating temperature of the supporting base material having the recesses is higher than the melting point of the low melting point alloy or metal in the metal paste filled in the recesses. .
属成分が溶融して形成する金属ボールの直径が前記支持
基材表面に設けられた凹部の深さより大であるように調
整された前記金属ペーストを用いることを特徴とする請
求項２記載の電気的接続接点の形成方法。5. The metal paste adjusted so that the diameter of the metal ball formed by melting the low melting point alloy or metal component in the metal paste is larger than the depth of the recess provided on the surface of the support base material. 3. The method of forming an electrical connection contact according to claim 2, wherein:
金属ペーストを支持基材表面に設けられた凹部に充填す
る工程、微細端子電極群上に突出接点が形成された素子
の突出接点面を前記金属ペーストに合わせて圧着し、前
記金属ペーストを前記微細端子電極群上の突出接点上に
転写する工程より構成されることを特徴とする電気的接
続接点の形成方法。6. Filling the recesses provided on the surface of the supporting base material with a metal paste containing a low melting point alloy or metal as the main component; A method for forming an electrical connection contact, comprising the steps of crimping in accordance with the metal paste and transferring the metal paste onto the protruding contacts on the micro terminal electrode group.
素子、支持基材の少なくとも１種を加熱しつつ、前記素
子上微細端子群上の突出接点を前記凹部中に充填した金
属ペーストに合わせて圧着し、前記金属ペーストを前記
微細端子電極群上の突出接点に転写する工程より構成さ
れることを特徴とする請求項６記載の電気的接続接点の
形成方法。7. While heating at least one of an element having protruding contacts on a group of fine terminal electrodes and a support base material, aligning the protruding contacts on the group of fine terminals on the element with the metal paste filled in the recess. 7. The method of forming an electrical connection contact according to claim 6, further comprising the step of crimping the metal paste by pressing the metal paste onto the protruding contacts on the micro terminal electrode group.
部に充填された金属ペースト中の低融点合金または金属
の融点より高いことを特徴とする請求項７記載の電気的
接続接点の形成方法。8. The method of forming an electrical connection contact according to claim 7, wherein the heating temperature of the supporting base material having the recess is higher than the melting point of the low melting point alloy or metal in the metal paste filled in the recess. .
金属ペーストを支持基材表面に設けられた凹部に充填す
る工程、素子の微細端子電極面を前記凹部中の前記金属
ペーストに合わせて圧着し、前記金属ペーストを前記微
細端子電極面上に転写して突出電極を形成する工程、前
記微細端子電極面上に形成された突出電極を再溶融して
他の基板上の電極群と接続する工程からなることを特徴
とする実装基板の製造方法。9. A step of filling a recess provided on the surface of a supporting base material with a metal paste containing a low melting point alloy or metal as a main component, and crimping the fine terminal electrode surface of the element to the metal paste in the recess. and a step of transferring the metal paste onto the fine terminal electrode surface to form a protruding electrode, and remelting the protruding electrode formed on the fine terminal electrode surface to connect it to an electrode group on another substrate. A method for manufacturing a mounting board, characterized by comprising steps.
基材の少なくとも１種を加熱しつつ、前記素子上微細端
子電極面を前記凹部中に充填した金属ペーストに合わせ
て圧着し、前記金属ペーストを前記微細端子電極上に転
写して突出電極を形成する工程より構成されることを特
徴とする請求項９記載の実装基板の製造方法。10. While heating at least one of an element having a group of fine terminal electrodes and a support base material, the surface of the fine terminal electrode on the element is pressed against the metal paste filled in the recess, and the metal paste is heated. 10. The method of manufacturing a mounting board according to claim 9, further comprising a step of transferring the micro terminal electrode onto the fine terminal electrode to form a protruding electrode.
る金属ペーストを支持基材表面に設けられた凹部に充填
する工程、微細端子電極群上に突出接点が形成された素
子の突出接点面を前記凹部中の前記金属ペーストに合わ
せて圧着し、前記金属ペーストを前記微細端子電極面上
の突出接点に転写して突出電極を形成する工程、前記微
細端子電極面上に形成された突出電極を再溶融して他の
基板上の電極群と接続する工程からなることを特徴とす
る実装基板の製造方法。11. Filling the recesses provided on the surface of the supporting base material with a metal paste containing a low melting point alloy or metal as the main component, the protruding contact surface of the element having the protruding contacts formed on the micro terminal electrode group. crimping according to the metal paste in the recess, and transferring the metal paste to the protruding contacts on the fine terminal electrode surface to form a protruding electrode; A method for manufacturing a mounting board, comprising a step of remelting and connecting to an electrode group on another board.
素子、支持基材の少なくとも１種を加熱しつつ、前記素
子上微細端子電極面を前記凹部中に充填した金属ペース
トに合わせて圧着し、前記金属ペーストを前記微細端子
電極上の突出接点に転写して突出電極を形成する工程よ
り構成されることを特徴とする請求項１１記載の実装基
板の製造方法。12. While heating at least one of an element having a protruding contact point on a group of fine terminal electrodes and a supporting base material, the surface of the fine terminal electrode on the element is pressed against the metal paste filled in the recess, 12. The method of manufacturing a mounting board according to claim 11, further comprising a step of transferring the metal paste to a protruding contact on the fine terminal electrode to form a protruding electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3114392A JPH04342139A (en) | 1991-05-20 | 1991-05-20 | Formation method for electric connection contact and manufacture of mounting board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3114392A JPH04342139A (en) | 1991-05-20 | 1991-05-20 | Formation method for electric connection contact and manufacture of mounting board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04342139A true JPH04342139A (en) | 1992-11-27 |
Family
ID=14636531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3114392A Pending JPH04342139A (en) | 1991-05-20 | 1991-05-20 | Formation method for electric connection contact and manufacture of mounting board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04342139A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872051A (en) * | 1995-08-02 | 1999-02-16 | International Business Machines Corporation | Process for transferring material to semiconductor chip conductive pads using a transfer substrate |
-
1991
- 1991-05-20 JP JP3114392A patent/JPH04342139A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872051A (en) * | 1995-08-02 | 1999-02-16 | International Business Machines Corporation | Process for transferring material to semiconductor chip conductive pads using a transfer substrate |
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