JP2641802B2 - 撮像装置 - Google Patents

撮像装置

Info

Publication number
JP2641802B2
JP2641802B2 JP2408026A JP40802690A JP2641802B2 JP 2641802 B2 JP2641802 B2 JP 2641802B2 JP 2408026 A JP2408026 A JP 2408026A JP 40802690 A JP40802690 A JP 40802690A JP 2641802 B2 JP2641802 B2 JP 2641802B2
Authority
JP
Japan
Prior art keywords
pixels
gate
line
read
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2408026A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04225686A (ja
Inventor
正二 土肥
健司 粟本
加寿也 久保
雄一郎 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2408026A priority Critical patent/JP2641802B2/ja
Priority to US07/811,366 priority patent/US5227887A/en
Priority to DE69129183T priority patent/DE69129183D1/de
Priority to EP91122171A priority patent/EP0492597B1/en
Publication of JPH04225686A publication Critical patent/JPH04225686A/ja
Application granted granted Critical
Publication of JP2641802B2 publication Critical patent/JP2641802B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/41—Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2408026A 1990-12-27 1990-12-27 撮像装置 Expired - Fee Related JP2641802B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2408026A JP2641802B2 (ja) 1990-12-27 1990-12-27 撮像装置
US07/811,366 US5227887A (en) 1990-12-27 1991-12-20 Two-dimensional image sensing device for having a storage gate for plural photo detectors
DE69129183T DE69129183D1 (de) 1990-12-27 1991-12-23 Zweidimensionale Bildaufnahmevorrichtung für mehrfaches Verschachteln mit einer ladungsgekoppelten Vorrichtung
EP91122171A EP0492597B1 (en) 1990-12-27 1991-12-23 A two dimensional image sensing device for plural interlacing, having a charge-coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2408026A JP2641802B2 (ja) 1990-12-27 1990-12-27 撮像装置

Publications (2)

Publication Number Publication Date
JPH04225686A JPH04225686A (ja) 1992-08-14
JP2641802B2 true JP2641802B2 (ja) 1997-08-20

Family

ID=18517534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2408026A Expired - Fee Related JP2641802B2 (ja) 1990-12-27 1990-12-27 撮像装置

Country Status (4)

Country Link
US (1) US5227887A (cg-RX-API-DMAC7.html)
EP (1) EP0492597B1 (cg-RX-API-DMAC7.html)
JP (1) JP2641802B2 (cg-RX-API-DMAC7.html)
DE (1) DE69129183D1 (cg-RX-API-DMAC7.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2600574B2 (ja) * 1993-05-13 1997-04-16 日本電気株式会社 固体撮像素子およびその駆動方法
DE69522013T2 (de) * 1995-04-07 2002-03-28 Ifire Technology Inc., Fort Saskatchewan Ausleseschaltung für eine bildmatrix mit aktiver matrix
US6452633B1 (en) 1998-02-26 2002-09-17 Foveon, Inc. Exposure control in electronic cameras by detecting overflow from active pixels
US6097022A (en) * 1998-06-17 2000-08-01 Foveon, Inc. Active pixel sensor with bootstrap amplification
US6410899B1 (en) 1998-06-17 2002-06-25 Foveon, Inc. Active pixel sensor with bootstrap amplification and reduced leakage during readout
US6246043B1 (en) 1998-09-22 2001-06-12 Foveon, Inc. Method and apparatus for biasing a CMOS active pixel sensor above the nominal voltage maximums for an IC process
US6697114B1 (en) 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
US6809768B1 (en) 2000-02-14 2004-10-26 Foveon, Inc. Double slope pixel sensor and array
US6882367B1 (en) 2000-02-29 2005-04-19 Foveon, Inc. High-sensitivity storage pixel sensor having auto-exposure detection
US6940551B2 (en) 2000-09-25 2005-09-06 Foveon, Inc. Active pixel sensor with noise cancellation
US6525304B1 (en) 2000-11-28 2003-02-25 Foveon, Inc. Circuitry for converting analog signals from pixel sensor to a digital and for storing the digital signal
FR2855326B1 (fr) * 2003-05-23 2005-07-22 Atmel Grenoble Sa Capteur d'image matriciel en technologie cmos
DE102007045448B4 (de) 2007-09-24 2025-01-30 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
US8363018B2 (en) * 2009-03-19 2013-01-29 Au Optronics Corporation Integrated touch panel and method for making same
US10403656B2 (en) * 2016-07-14 2019-09-03 Purdue Research Foundation Energy harvesting configurable image sensor
CN108735182B (zh) * 2018-05-04 2021-04-09 京东方科技集团股份有限公司 一种感光电路及其驱动方法、显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5158813A (cg-RX-API-DMAC7.html) * 1974-11-20 1976-05-22 Hitachi Ltd
JPS593066B2 (ja) * 1975-09-18 1984-01-21 ソニー株式会社 コタイサツゾウタイ
GB2150390B (en) * 1983-10-18 1987-04-29 Hitachi Ltd Reducing vertical smears generated in solid state image sensors
JPS60183881A (ja) * 1984-03-01 1985-09-19 Mitsubishi Electric Corp 固体撮像素子
US4805026A (en) * 1986-02-18 1989-02-14 Nec Corporation Method for driving a CCD area image sensor in a non-interlace scanning and a structure of the CCD area image sensor for driving in the same method
JPS6386974A (ja) * 1986-09-30 1988-04-18 Nec Corp 電荷転送撮像素子とその駆動方法
JPH0831586B2 (ja) * 1987-02-09 1996-03-27 富士通株式会社 半導体装置
JPH01106676A (ja) * 1987-10-20 1989-04-24 Mitsubishi Electric Corp 固体イメージセンサ
US4949183A (en) * 1989-11-29 1990-08-14 Eastman Kodak Company Image sensor having multiple horizontal shift registers

Also Published As

Publication number Publication date
EP0492597A3 (cg-RX-API-DMAC7.html) 1994-02-23
EP0492597A2 (en) 1992-07-01
DE69129183D1 (de) 1998-05-07
EP0492597B1 (en) 1998-04-01
US5227887A (en) 1993-07-13
JPH04225686A (ja) 1992-08-14

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Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19970401

LAPS Cancellation because of no payment of annual fees