JP2633402B2 - Manufacturing method of liquid crystal display device - Google Patents
Manufacturing method of liquid crystal display deviceInfo
- Publication number
- JP2633402B2 JP2633402B2 JP5707191A JP5707191A JP2633402B2 JP 2633402 B2 JP2633402 B2 JP 2633402B2 JP 5707191 A JP5707191 A JP 5707191A JP 5707191 A JP5707191 A JP 5707191A JP 2633402 B2 JP2633402 B2 JP 2633402B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- semiconductor layer
- liquid crystal
- crystal display
- crystal semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液晶表示部とその駆動
を行うドライバー回路が同一の基板に内蔵された、所謂
ドライバーモノリシック型の液晶表示装置の製造方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a so-called driver monolithic liquid crystal display device in which a liquid crystal display section and a driver circuit for driving the liquid crystal display section are built in the same substrate.
【０００２】[0002]
【従来の技術】上記液晶表示装置は、従来、図５〜図７
〔（ａ）は正面図、（ｂ）は断面図〕に示すようにして
製造されている。即ち、図５に示すように、石英ウェー
ハ１１に単結晶半導体ウェーハ１２ａを貼り合わせ、半
導体ウェーハ１２ａ側を平面研削して薄肉となして単結
晶半導体層１２を得た後、図６に示すように単結晶半導
体層１２の中央部をエッチング等にて除去して窪み１３
を形成し、図７に示すように除去せずに残した単結晶半
導体層１２部分にドライバー回路１４を形成すると共
に、除去されて窪み１３となった箇所に液晶表示部１５
を形成することにより製造されている。2. Description of the Related Art Conventionally, the above-mentioned liquid crystal display device has conventionally been shown in FIGS.
[(A) is a front view, and (b) is a cross-sectional view]. That is, as shown in FIG. 5, a single-crystal semiconductor wafer 12a is bonded to a quartz wafer 11, and the semiconductor wafer 12a side is ground to be thinner to obtain a single-crystal semiconductor layer 12, and as shown in FIG. Then, the central portion of the single crystal semiconductor layer 12 is removed by etching or the like to form a dent 13.
A driver circuit 14 is formed in the portion of the single crystal semiconductor layer 12 which is not removed as shown in FIG. 7, and a liquid crystal display portion 15 is formed in a portion where the recess 13 has been removed.
It is manufactured by forming.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、単結晶
半導体層としては、現在の技術では厚み０．５μｍ以下
のものを得ることが不可能であり、このため高性能なト
ランジスタを形成できないでいた。例えば、ＳＯＩ−Ｍ
ＯＳ−ＦＥＴにおいて半導体層を薄くした場合には、ゲ
ート電圧の印加によってその半導体層全体を空乏化する
ことにより、電流駆動能力の向上、ショートチャンネル
効果の低減等の向上が得られることが知られている。However, it is impossible to obtain a single-crystal semiconductor layer having a thickness of 0.5 μm or less with the current technology, so that a high-performance transistor cannot be formed. For example, SOI-M
It is known that when a semiconductor layer is thinned in an OS-FET, the entire semiconductor layer is depleted by application of a gate voltage, so that an improvement in current driving capability, a reduction in a short channel effect, and the like can be obtained. ing.
【０００４】また、単結晶半導体層の厚み均一性が悪い
ため、トランジスタ素子の特性バラツキが大きかった。[0004] Further, since the uniformity of the thickness of the single crystal semiconductor layer is poor, the characteristic variation of the transistor element is large.
【０００５】本発明は、このような従来技術の欠点を解
決するものであり、高性能かつ高均一特性を有するドラ
イバー回路を備えた液晶表示装置の製造方法を提供する
ことを目的とする。An object of the present invention is to solve the drawbacks of the prior art and to provide a method of manufacturing a liquid crystal display device having a driver circuit having high performance and high uniformity characteristics.
【０００６】[0006]
【課題を解決するための手段】本発明の液晶表示装置の
製造方法は、液晶表示部及びその駆動を行うドライバー
回路が同一の基板に内蔵された液晶表示装置の製造方法
において、絶縁性基板に貼着した単結晶半導体層の一部
を除去して該基板に達する窪みを形成する工程と、該窪
みに液晶表示部を形成する工程と、除去せずに残した単
結晶半導体層部分に酸素をイオン注入したのち熱処理を
施して、該部分の内部に酸化物層を、該酸化物層の上に
単結晶半導体層を形成する工程と、酸化物層上の単結晶
半導体層にドライバー回路を形成する工程と、を含んで
なり、そのことにより上記目的が達成される。According to a method of manufacturing a liquid crystal display device of the present invention, a method of manufacturing a liquid crystal display device in which a liquid crystal display portion and a driver circuit for driving the liquid crystal display device are built in the same substrate is provided. Removing a part of the attached single crystal semiconductor layer to form a depression reaching the substrate, forming a liquid crystal display portion in the depression, and adding oxygen to the single crystal semiconductor layer portion left unremoved. Heat treatment to form an oxide layer inside the portion, a single crystal semiconductor layer over the oxide layer, and a driver circuit in the single crystal semiconductor layer over the oxide layer. And a forming step, whereby the above object is achieved.
【０００７】[0007]
【作用】上記液晶表示装置の製造方法において、除去せ
ずに残した単結晶半導体層部分には、酸素をイオン注入
したのち熱処理を施すので、内部に酸化物層を形成さ
せ、その酸化物層の上に薄肉の単結晶半導体層を形成さ
せることができる。そして、その薄肉の単結晶半導体層
にはドライバー回路を形成させる。In the above-mentioned method for manufacturing a liquid crystal display device, a heat treatment is applied to the portion of the single crystal semiconductor layer which has not been removed, after ion implantation of oxygen, so that an oxide layer is formed therein. A thin single crystal semiconductor layer can be formed thereover. Then, a driver circuit is formed in the thin single crystal semiconductor layer.
【０００８】[0008]
【実施例】本発明の実施例について以下に説明する。Embodiments of the present invention will be described below.
【０００９】図１の（ａ）は本発明方法により得られた
液晶表示装置を示す正面図、図１の（ｂ）はその断面図
である。この装置は、石英等からなる透明な絶縁性基板
１と、これに離隔対向させて設けられ基板１と同材料の
絶縁性基板６と、両基板１、６間に設けられた単結晶半
導体層２及び表示部５と、単結晶半導体層２の厚み方向
の中間部に形成された酸化膜層７とを備える。FIG. 1A is a front view showing a liquid crystal display device obtained by the method of the present invention, and FIG. 1B is a sectional view thereof. This apparatus comprises a transparent insulating substrate 1 made of quartz or the like, an insulating substrate 6 provided to be spaced apart and facing the same, and an insulating substrate 6 of the same material as the substrate 1, and a single crystal semiconductor layer provided between the substrates 1 and 6. 2 and a display portion 5 and an oxide film layer 7 formed at an intermediate portion of the single crystal semiconductor layer 2 in the thickness direction.
【００１０】前記単結晶半導体層２は、矩形板状の中央
部が貫通する枠状に形成され、本実施例では単結晶Ｓｉ
からなる。単結晶半導体層２の内部は３層構造に形成さ
れ、基板１側から単結晶Ｓｉ層２ｂ、Ｓｉ酸化物層７、
単結晶Ｓｉ層２ａとなっており、単結晶Ｓｉ層２ａには
ドライバー回路４が形成されている。単結晶半導体層２
の内側には、表示を実行する表示部５が設けられてい
る。表示部５は、ゲートバスライン５ａ、ソースバスラ
イン５ｂ等からなり、ドライバー回路４にて駆動される
と、その駆動状況に応じた表示を行う。The single crystal semiconductor layer 2 is formed in a frame shape through which a central portion of a rectangular plate penetrates.
Consists of The inside of the single crystal semiconductor layer 2 is formed in a three-layer structure, and a single crystal Si layer 2b, a Si oxide layer 7,
The single crystal Si layer 2a has a driver circuit 4 formed on the single crystal Si layer 2a. Single crystal semiconductor layer 2
A display unit 5 for performing a display is provided inside. The display unit 5 includes a gate bus line 5a, a source bus line 5b, and the like. When driven by the driver circuit 4, the display unit 5 performs display according to the driving state.
【００１１】次に、このような構造の液晶表示装置の製
造方法について説明する。Next, a method of manufacturing a liquid crystal display device having such a structure will be described.
【００１２】先ず、絶縁性基板１に単結晶半導体ウェー
ハ２ａを貼着する。貼着する段階では、単結晶半導体ウ
ェーハ２ａは矩形板状である。その後、単結晶半導体ウ
ェーハ２ａの外面側を平面研削等を施して薄肉となして
単結晶半導体層２を得る。単結晶半導体層２の厚みとし
ては、本実施例では２μｍ程度とした。First, a single crystal semiconductor wafer 2a is attached to an insulating substrate 1. At the stage of sticking, the single crystal semiconductor wafer 2a has a rectangular plate shape. After that, the outer surface side of the single crystal semiconductor wafer 2a is subjected to surface grinding or the like to make it thinner, and the single crystal semiconductor layer 2 is obtained. In this embodiment, the thickness of the single crystal semiconductor layer 2 is about 2 μm.
【００１３】次いで、このとき矩形板状をしている単結
晶半導体層２の周辺部を残して中央部をエッチング等に
て除去し、図２〔（ａ）は正面図、（ｂ）は断面図〕に
示すように絶縁性基板１に達する窪み３を形成して単結
晶半導体層２を矩形枠状に成形する。この段階までは、
従来と同様である。Next, at this time, the central portion is removed by etching or the like except for the peripheral portion of the single crystal semiconductor layer 2 having a rectangular plate shape, and FIG. 2 (a) is a front view, and FIG. As shown in FIG. 1, a depression 3 reaching the insulating substrate 1 is formed, and the single crystal semiconductor layer 2 is formed into a rectangular frame shape. Until this stage,
It is the same as the conventional one.
【００１４】続いて、図３〔（ａ）は正面図、（ｂ）は
断面図〕に示すように矩形枠状をした単結晶半導体層２
に対して、酸素をイオン注入する。注入条件としては、
電圧を１８０ＫｅＶ、濃度を２×１０18 ions ／ｃｍ2
とした。その後、熱処理を施して、単結晶半導体層２の
内部にＳｉ酸化物層７を形成する。熱処理条件として
は、温度を１３５０°Ｃ、雰囲気をＮ2 、処理時間を３
０分とした。これにより、図４〔（ａ）は正面図、
（ｂ）は断面図〕に示すように単結晶半導体層２が上述
した如く３層構造となり、中間のＳｉ酸化物層７の厚み
は５３００オングストローム、その上の単結晶Ｓｉ層２
ａの厚みは非常に薄い１３００オングストロームになっ
た。Subsequently, as shown in FIG. 3 ((a) is a front view, and (b) is a cross-sectional view), the single crystal semiconductor layer 2 having a rectangular frame shape is formed.
Is implanted with oxygen. As the injection conditions,
The voltage is 180 KeV and the concentration is 2 × 10 18 ions / cm 2
And Thereafter, heat treatment is performed to form Si oxide layer 7 inside single crystal semiconductor layer 2. As the heat treatment conditions, the temperature is 1350 ° C., the atmosphere is N 2 , and the treatment time is 3
0 minutes. Thereby, FIG. 4 (a) is a front view,
(B) is a sectional view], the single crystal semiconductor layer 2 has a three-layer structure as described above, the thickness of the intermediate Si oxide layer 7 is 5300 Å, and the single crystal Si layer 2
The thickness of a became very thin, 1300 angstroms.
【００１５】なお、上述したイオン注入及び熱処理を施
すこと、即ちＳＩＭＯＸ（Separation by Implanted Ox
ygen) 法を行うことは、矩形板状の半導体層２を枠状に
成形するよりも前に行ってもよい。The above-mentioned ion implantation and heat treatment are performed, that is, SIMOX (Separation by Implanted Ox).
The ygen) method may be performed before the rectangular plate-shaped semiconductor layer 2 is formed into a frame shape.
【００１６】その後、薄肉の単結晶Ｓｉ層２ａに公知の
方法にてドライバー回路４を形成し、また前記窪み３部
分に液晶表示部５を形成する。Thereafter, a driver circuit 4 is formed on the thin single-crystal Si layer 2a by a known method, and a liquid crystal display section 5 is formed on the recess 3 portion.
【００１７】したがって、本発明にて製造された液晶表
示装置においては、ドライバー回路４を形成する単結晶
半導体層が薄肉の単結晶Ｓｉ層２ａであり、厚みが極め
て薄く、かつ均一となる。よって、ドライバー回路４と
しては、電流駆動能力の向上、ショートチャンネル効果
の低減等の向上が得られ、更にトランジスタ素子の特性
パラツキを小さくなる。Therefore, in the liquid crystal display device manufactured by the present invention, the single crystal semiconductor layer forming the driver circuit 4 is the thin single crystal Si layer 2a, and the thickness is extremely thin and uniform. Therefore, as the driver circuit 4, improvements such as an improvement in the current driving capability and a reduction in the short channel effect can be obtained, and further, the characteristic variation of the transistor element can be reduced.
【００１８】[0018]
【発明の効果】本発明の液晶表示装置の製造方法は、ド
ライバー回路を形成する単結晶半導体層をＳＩＭＯＸ法
を用いて形成しているので、ドライバー回路部の単結晶
半導体層が均一かつ薄肉となり、このため高性能、高均
一特性を有するドライバー回路を内蔵した高精細液晶表
示装置を製造することが可能となる。According to the method of manufacturing a liquid crystal display device of the present invention, since the single crystal semiconductor layer forming the driver circuit is formed by using the SIMOX method, the single crystal semiconductor layer in the driver circuit portion becomes uniform and thin. Therefore, it is possible to manufacture a high-definition liquid crystal display device incorporating a driver circuit having high performance and high uniformity characteristics.
【図１】（ａ）は本発明方法により製造された液晶表示
装置を示す正面図、（ｂ）はその断面図である。FIG. 1A is a front view showing a liquid crystal display device manufactured by the method of the present invention, and FIG. 1B is a sectional view thereof.
【図２】（ａ）は単結晶半導体層に窪みを形成した状態
を示す正面図、（ｂ）はその断面図である。FIG. 2A is a front view showing a state in which a depression is formed in a single crystal semiconductor layer, and FIG. 2B is a cross-sectional view thereof.
【図３】（ａ）は単結晶半導体層にイオン注入を行う状
態を示す正面図、（ｂ）はその断面図である。3A is a front view illustrating a state in which ions are implanted into a single crystal semiconductor layer, and FIG. 3B is a cross-sectional view thereof.
【図４】（ａ）は単結晶半導体層を３層構造になした状
態を示す正面図、（ｂ）はその断面図である。4A is a front view showing a state in which a single crystal semiconductor layer has a three-layer structure, and FIG. 4B is a cross-sectional view thereof.
【図５】（ａ）は従来の製造方法の場合であって石英ウ
ェーハに貼着した単結晶半導体ウェーハを薄肉になした
状態を示す正面図、（ｂ）はその断面図である。FIG. 5A is a front view showing a state in which a single crystal semiconductor wafer attached to a quartz wafer is thinned in a conventional manufacturing method, and FIG. 5B is a cross-sectional view thereof.
【図６】（ａ）はその単結晶半導体ウェーハに窪みを形
成した状態を示す正面図、（ｂ）はその断面図である。6A is a front view showing a state in which a depression is formed in the single crystal semiconductor wafer, and FIG. 6B is a sectional view thereof.
【図７】（ａ）は従来の製造方法により製造された液晶
表示装置を示す正面図、（ｂ）はその断面図である。FIG. 7A is a front view showing a liquid crystal display device manufactured by a conventional manufacturing method, and FIG. 7B is a cross-sectional view thereof.
１ 絶縁性基板 ２ 単結晶半導体層 ２ａ 単結晶Ｓｉ層 ２ｂ 単結晶Ｓｉ層 ３ 窪み ４ ドライバー回路 ５ 液晶表示部 ６ 絶縁性基板 ７ Ｓｉ酸化物層 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Single crystal semiconductor layer 2a Single crystal Si layer 2b Single crystal Si layer 3 Depression 4 Driver circuit 5 Liquid crystal display part 6 Insulating substrate 7 Si oxide layer
Claims (1)
ー回路が同一の基板に内蔵された液晶表示装置の製造方
法において、絶縁性基板に貼着した単結晶半導体層の一
部を除去して該基板に達する窪みを形成する工程と、該
窪みに液晶表示部を形成する工程と、除去せずに残した
単結晶半導体層部分に酸素をイオン注入したのち熱処理
を施して、該部分の内部に酸化物層を、該酸化物層の上
に単結晶半導体層を形成する工程と、酸化物層上の単結
晶半導体層にドライバー回路を形成する工程と、を含む
液晶表示装置の製造方法。In a method of manufacturing a liquid crystal display device in which a liquid crystal display portion and a driver circuit for driving the liquid crystal display portion are built in the same substrate, a part of the single crystal semiconductor layer attached to an insulating substrate is removed. A step of forming a depression reaching the substrate, a step of forming a liquid crystal display portion in the depression, and ion implantation of oxygen into the single crystal semiconductor layer portion left unremoved, and then a heat treatment is applied to the inside of the portion. A method for manufacturing a liquid crystal display device, comprising: forming an oxide layer over a single crystal semiconductor layer over the oxide layer; and forming a driver circuit over the single crystal semiconductor layer over the oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5707191A JP2633402B2 (en) | 1991-03-20 | 1991-03-20 | Manufacturing method of liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5707191A JP2633402B2 (en) | 1991-03-20 | 1991-03-20 | Manufacturing method of liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04291324A JPH04291324A (en) | 1992-10-15 |
| JP2633402B2 true JP2633402B2 (en) | 1997-07-23 |
Family
ID=13045222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5707191A Expired - Lifetime JP2633402B2 (en) | 1991-03-20 | 1991-03-20 | Manufacturing method of liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2633402B2 (en) |
-
1991
- 1991-03-20 JP JP5707191A patent/JP2633402B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04291324A (en) | 1992-10-15 |
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