JP2591566B2 - 半導体集積回路の製造方法 - Google Patents

半導体集積回路の製造方法

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Publication number
JP2591566B2
JP2591566B2 JP4206154A JP20615492A JP2591566B2 JP 2591566 B2 JP2591566 B2 JP 2591566B2 JP 4206154 A JP4206154 A JP 4206154A JP 20615492 A JP20615492 A JP 20615492A JP 2591566 B2 JP2591566 B2 JP 2591566B2
Authority
JP
Japan
Prior art keywords
plasma
dielectric material
flow rate
deposition
teos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4206154A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06151417A (ja
Inventor
ダグラス ユ チェンーフア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of JPH06151417A publication Critical patent/JPH06151417A/ja
Application granted granted Critical
Publication of JP2591566B2 publication Critical patent/JP2591566B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP4206154A 1991-07-10 1992-07-10 半導体集積回路の製造方法 Expired - Lifetime JP2591566B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/727,698 US5246887A (en) 1991-07-10 1991-07-10 Dielectric deposition
US727698 1991-07-10

Publications (2)

Publication Number Publication Date
JPH06151417A JPH06151417A (ja) 1994-05-31
JP2591566B2 true JP2591566B2 (ja) 1997-03-19

Family

ID=24923651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4206154A Expired - Lifetime JP2591566B2 (ja) 1991-07-10 1992-07-10 半導体集積回路の製造方法

Country Status (3)

Country Link
US (1) US5246887A (enExample)
EP (1) EP0522799A2 (enExample)
JP (1) JP2591566B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389581A (en) * 1991-06-07 1995-02-14 Intel Corporation High density TEOS-based film for intermetal dielectrics
US5407866A (en) * 1994-02-02 1995-04-18 Motorola, Inc. Method for forming a dielectric layer on a high temperature metal layer
KR0134108B1 (ko) * 1994-06-30 1998-04-20 김주용 반도체 소자의 제조방법
US5559052A (en) * 1994-12-29 1996-09-24 Lucent Technologies Inc. Integrated circuit fabrication with interlevel dielectric
KR0140657B1 (ko) * 1994-12-31 1998-06-01 김주용 반도체 소자의 제조방법
US5736423A (en) * 1995-11-16 1998-04-07 Advanced Micro Devices, Inc. Method for depositing very thin PECVD SiO2 in 0.5 micron and 0.35 micron technologies
CN1049764C (zh) * 1996-02-14 2000-02-23 台湾茂矽电子股份有限公司 集成电路中介电层的制造方法
US5913140A (en) * 1996-12-23 1999-06-15 Lam Research Corporation Method for reduction of plasma charging damage during chemical vapor deposition
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6627532B1 (en) * 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
KR100605770B1 (ko) * 1998-02-11 2006-07-28 어플라이드 머티어리얼스, 인코포레이티드 저 유전상수 필름을 증착하는 플라즈마 방법
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
KR20030002993A (ko) * 2001-06-29 2003-01-09 학교법인 포항공과대학교 저유전체 박막의 제조방법
US6926926B2 (en) * 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
US20070264842A1 (en) * 2006-05-12 2007-11-15 Samsung Electronics Co., Ltd. Insulation film deposition method for a semiconductor device
CN115341194B (zh) * 2022-07-05 2024-02-23 华灿光电(苏州）有限公司 提高微型发光二极管发光一致性的生长方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3934060A (en) * 1973-12-19 1976-01-20 Motorola, Inc. Method for forming a deposited silicon dioxide layer on a semiconductor wafer
US4717596A (en) * 1985-10-30 1988-01-05 International Business Machines Corporation Method for vacuum vapor deposition with improved mass flow control
US4872947A (en) * 1986-12-19 1989-10-10 Applied Materials, Inc. CVD of silicon oxide using TEOS decomposition and in-situ planarization process
JP2772819B2 (ja) * 1989-04-26 1998-07-09 株式会社高純度化学研究所 半導体装置の酸化膜の製造法
US5314845A (en) * 1989-09-28 1994-05-24 Applied Materials, Inc. Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
JPH03155625A (ja) * 1989-11-14 1991-07-03 Seiko Epson Corp プラズマｃｖｄ膜の製造方法

Also Published As

Publication number Publication date
EP0522799A2 (en) 1993-01-13
JPH06151417A (ja) 1994-05-31
EP0522799A3 (enExample) 1994-02-16
US5246887A (en) 1993-09-21

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