JP2587493B2 - GuP緑色発光ダイオードの製造方法 - Google Patents
GuP緑色発光ダイオードの製造方法Info
- Publication number
- JP2587493B2 JP2587493B2 JP10993189A JP10993189A JP2587493B2 JP 2587493 B2 JP2587493 B2 JP 2587493B2 JP 10993189 A JP10993189 A JP 10993189A JP 10993189 A JP10993189 A JP 10993189A JP 2587493 B2 JP2587493 B2 JP 2587493B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- emitting diode
- light emitting
- gap
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10993189A JP2587493B2 (ja) | 1989-04-28 | 1989-04-28 | GuP緑色発光ダイオードの製造方法 |
| TW79103285A TW242704B (https=) | 1989-04-28 | 1990-04-23 | |
| US07/798,130 US5707891A (en) | 1989-04-28 | 1991-11-26 | Method of manufacturing a light emitting diode |
| US08/466,279 US5652178A (en) | 1989-04-28 | 1995-06-06 | Method of manufacturing a light emitting diode using LPE at different temperatures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10993189A JP2587493B2 (ja) | 1989-04-28 | 1989-04-28 | GuP緑色発光ダイオードの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02288373A JPH02288373A (ja) | 1990-11-28 |
| JP2587493B2 true JP2587493B2 (ja) | 1997-03-05 |
Family
ID=14522741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10993189A Expired - Fee Related JP2587493B2 (ja) | 1989-04-28 | 1989-04-28 | GuP緑色発光ダイオードの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2587493B2 (https=) |
| TW (1) | TW242704B (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI315629B (en) | 2006-01-09 | 2009-10-01 | Silicon Motion Inc | System and method for processing digital rights management files |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6013317B2 (ja) * | 1979-03-19 | 1985-04-06 | 松下電器産業株式会社 | 発光ダイオ−ドの製造方法 |
| JPS62208073A (ja) * | 1986-03-10 | 1987-09-12 | Fuji Xerox Co Ltd | 現像装置 |
-
1989
- 1989-04-28 JP JP10993189A patent/JP2587493B2/ja not_active Expired - Fee Related
-
1990
- 1990-04-23 TW TW79103285A patent/TW242704B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW242704B (https=) | 1995-03-11 |
| JPH02288373A (ja) | 1990-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5707891A (en) | Method of manufacturing a light emitting diode | |
| US4378259A (en) | Method for producing mixed crystal wafer using special temperature control for preliminary gradient and constant layer deposition suitable for fabricating light-emitting diode | |
| US4001056A (en) | Epitaxial deposition of iii-v compounds containing isoelectronic impurities | |
| US5529938A (en) | Method for producing light-emitting diode | |
| JP2587493B2 (ja) | GuP緑色発光ダイオードの製造方法 | |
| JPH08335715A (ja) | エピタキシャルウエハおよびその製造方法 | |
| US5571321A (en) | Method for producing a gallium phosphide epitaxial wafer | |
| US4298410A (en) | Method for growing a liquid phase epitaxial layer on a semiconductor substrate | |
| US5652178A (en) | Method of manufacturing a light emitting diode using LPE at different temperatures | |
| CN101118940B (zh) | 外延基板及液相外延生长方法 | |
| JP2666525B2 (ja) | GaA1As発光ダイオード及びその製造方法 | |
| JPH04328878A (ja) | 発光ダイオ−ド用エピタキシャルウエハの製造方法 | |
| JPH06342935A (ja) | GaP純緑色発光素子基板 | |
| JP3523412B2 (ja) | GaP:N発光ダイオードの製造方法 | |
| JP3326261B2 (ja) | 燐化ガリウム緑色発光ダイオードおよびその製造方法 | |
| JPS63213378A (ja) | 半導体発光素子の製造方法 | |
| JP2000058904A (ja) | エピタキシャルウェハ及びその製造方法並びに発光ダイオード | |
| JPS599983A (ja) | 燐化ガリウム緑色発光ダイオ−ドの製造方法 | |
| JPH1065211A (ja) | 発光ダイオード | |
| JP2701113B2 (ja) | GaP系発光素子基板及びその製造方法 | |
| JPS5918687A (ja) | ガリウム燐発光ダイオ−ドの製造方法 | |
| JPS5918686A (ja) | ガリウム燐発光ダイオ−ド | |
| TW508835B (en) | Epitaxial wafer for infrared light-emitting device and light-emitting device using the same | |
| JPS6226570B2 (https=) | ||
| JPS5972782A (ja) | 発光ダイオ−ドの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071205 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081205 Year of fee payment: 12 |
|
| LAPS | Cancellation because of no payment of annual fees |