JP2553580B2 - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JP2553580B2
JP2553580B2 JP62205764A JP20576487A JP2553580B2 JP 2553580 B2 JP2553580 B2 JP 2553580B2 JP 62205764 A JP62205764 A JP 62205764A JP 20576487 A JP20576487 A JP 20576487A JP 2553580 B2 JP2553580 B2 JP 2553580B2
Authority
JP
Japan
Prior art keywords
layer
clad layer
conductivity type
type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62205764A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6448486A (en
Inventor
豊 三橋
豊 永井
健志 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62205764A priority Critical patent/JP2553580B2/ja
Priority to US07/231,003 priority patent/US4841535A/en
Priority to NL8802011A priority patent/NL8802011A/nl
Priority to DE3827961A priority patent/DE3827961A1/de
Publication of JPS6448486A publication Critical patent/JPS6448486A/ja
Application granted granted Critical
Publication of JP2553580B2 publication Critical patent/JP2553580B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP62205764A 1987-08-19 1987-08-19 半導体レ−ザ装置 Expired - Lifetime JP2553580B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62205764A JP2553580B2 (ja) 1987-08-19 1987-08-19 半導体レ−ザ装置
US07/231,003 US4841535A (en) 1987-08-19 1988-08-11 Semiconductor laser device
NL8802011A NL8802011A (nl) 1987-08-19 1988-08-12 Een halfgeleiderlaserinrichting.
DE3827961A DE3827961A1 (de) 1987-08-19 1988-08-17 Halbleiterlaser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205764A JP2553580B2 (ja) 1987-08-19 1987-08-19 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS6448486A JPS6448486A (en) 1989-02-22
JP2553580B2 true JP2553580B2 (ja) 1996-11-13

Family

ID=16512281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205764A Expired - Lifetime JP2553580B2 (ja) 1987-08-19 1987-08-19 半導体レ−ザ装置

Country Status (4)

Country Link
US (1) US4841535A (enExample)
JP (1) JP2553580B2 (enExample)
DE (1) DE3827961A1 (enExample)
NL (1) NL8802011A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253682A (ja) * 1989-03-27 1990-10-12 Mitsubishi Electric Corp 半導体レーザ
JPH03127891A (ja) * 1989-10-13 1991-05-30 Mitsubishi Electric Corp 半導体レーザ装置
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
JPH0461292A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体レーザ
EP0627799B1 (en) * 1993-06-04 1997-10-08 Sharp Kabushiki Kaisha Semiconductor light-emitting device with third cladding layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1065460A (en) * 1975-06-23 1979-10-30 Robert D. Burnham Buried-heterostructure diode injection laser
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS57147292A (en) * 1981-03-06 1982-09-11 Hitachi Ltd Semiconductor laser and manufacture thereof
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS60217689A (ja) * 1984-04-13 1985-10-31 Oki Electric Ind Co Ltd 半導体発光素子の製造方法
JPS6252984A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 自己整合電流狭窄型半導体発光素子

Also Published As

Publication number Publication date
DE3827961C2 (enExample) 1993-02-18
NL8802011A (nl) 1989-03-16
JPS6448486A (en) 1989-02-22
US4841535A (en) 1989-06-20
DE3827961A1 (de) 1989-03-02

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