NL8802011A - Een halfgeleiderlaserinrichting. - Google Patents

Een halfgeleiderlaserinrichting. Download PDF

Info

Publication number
NL8802011A
NL8802011A NL8802011A NL8802011A NL8802011A NL 8802011 A NL8802011 A NL 8802011A NL 8802011 A NL8802011 A NL 8802011A NL 8802011 A NL8802011 A NL 8802011A NL 8802011 A NL8802011 A NL 8802011A
Authority
NL
Netherlands
Prior art keywords
layer
groove
type
laser device
laser
Prior art date
Application number
NL8802011A
Other languages
English (en)
Dutch (nl)
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL8802011A publication Critical patent/NL8802011A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL8802011A 1987-08-19 1988-08-12 Een halfgeleiderlaserinrichting. NL8802011A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20576487 1987-08-19
JP62205764A JP2553580B2 (ja) 1987-08-19 1987-08-19 半導体レ−ザ装置

Publications (1)

Publication Number Publication Date
NL8802011A true NL8802011A (nl) 1989-03-16

Family

ID=16512281

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8802011A NL8802011A (nl) 1987-08-19 1988-08-12 Een halfgeleiderlaserinrichting.

Country Status (4)

Country Link
US (1) US4841535A (enExample)
JP (1) JP2553580B2 (enExample)
DE (1) DE3827961A1 (enExample)
NL (1) NL8802011A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253682A (ja) * 1989-03-27 1990-10-12 Mitsubishi Electric Corp 半導体レーザ
JPH03127891A (ja) * 1989-10-13 1991-05-30 Mitsubishi Electric Corp 半導体レーザ装置
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
JPH0461292A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体レーザ
EP0627799B1 (en) * 1993-06-04 1997-10-08 Sharp Kabushiki Kaisha Semiconductor light-emitting device with third cladding layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487138A1 (fr) * 1980-07-16 1982-01-22 Sony Corp Laser a semi-conducteur
EP0155152A2 (en) * 1984-03-13 1985-09-18 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser
JPS60217689A (ja) * 1984-04-13 1985-10-31 Oki Electric Ind Co Ltd 半導体発光素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1065460A (en) * 1975-06-23 1979-10-30 Robert D. Burnham Buried-heterostructure diode injection laser
JPS57147292A (en) * 1981-03-06 1982-09-11 Hitachi Ltd Semiconductor laser and manufacture thereof
JPS6252984A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 自己整合電流狭窄型半導体発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487138A1 (fr) * 1980-07-16 1982-01-22 Sony Corp Laser a semi-conducteur
EP0155152A2 (en) * 1984-03-13 1985-09-18 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser
JPS60217689A (ja) * 1984-04-13 1985-10-31 Oki Electric Ind Co Ltd 半導体発光素子の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 069 (E - 389) 18 March 1986 (1986-03-18) *
Y.MIHASHI ET AL.: "A novel self-aligned AlGaAs laser with bent active layer grown by MOCVD", INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1 December 1985 (1985-12-01), WASHINGTON, US, pages 646 - 649, XP000713557 *

Also Published As

Publication number Publication date
DE3827961C2 (enExample) 1993-02-18
DE3827961A1 (de) 1989-03-02
US4841535A (en) 1989-06-20
JP2553580B2 (ja) 1996-11-13
JPS6448486A (en) 1989-02-22

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