JP2549634B2 - Lead frame for semiconductor device - Google Patents
Lead frame for semiconductor deviceInfo
- Publication number
- JP2549634B2 JP2549634B2 JP61223361A JP22336186A JP2549634B2 JP 2549634 B2 JP2549634 B2 JP 2549634B2 JP 61223361 A JP61223361 A JP 61223361A JP 22336186 A JP22336186 A JP 22336186A JP 2549634 B2 JP2549634 B2 JP 2549634B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- side frame
- semiconductor device
- partition
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、樹脂封止形の半導体装置に用いるリード
フレームに関し、特に樹脂封止後に生じるリードフレー
ム全体の変形を防止する改良にかかわる。Description: TECHNICAL FIELD The present invention relates to a lead frame used in a resin-sealed semiconductor device, and more particularly to an improvement for preventing deformation of the entire lead frame after resin sealing.
第４図は従来のリードフレームを示す平面図である。
図において、１は両側の外枠部、２はこれらの外枠部間
を連結するサイドフレーム部、３はタイバー部、４はリ
ード部、５はダイパツド、6aはサイドフレーム部２に形
成されたスリツトである。FIG. 4 is a plan view showing a conventional lead frame.
In the figure, 1 is an outer frame part on both sides, 2 is a side frame part connecting these outer frame parts, 3 is a tie bar part, 4 is a lead part, 5 is a die pad, and 6a is formed on the side frame part 2. It's a slit.
このスリツト6aが形成されたサイドフレーム部２を第
５図に示す。このスリツト6aの長さは比較的短くし、樹
脂封止時の圧縮圧力に対し強いようにしている。FIG. 5 shows the side frame portion 2 having the slit 6a formed therein. The length of this slit 6a is made relatively short so as to be strong against the compression pressure at the time of resin sealing.
また、第６図に示すように、サイドフレーム部２に比
較的長いスリツト6bを形成したものがあつた。この場合
は、樹脂封止時の圧縮圧力には弱いが、熱収縮応力が残
留しないようにしている。Further, as shown in FIG. 6, there is a side frame portion 2 in which a relatively long slit 6b is formed. In this case, although it is weak against the compression pressure at the time of resin sealing, the heat shrinkage stress is prevented from remaining.
第４図に返り、鎖線で示す７はダイパツド５に固着さ
れた半導体チツプで、各リード部４に金属細線８でワイ
ヤボンデイングされる。この半導体チツプ７部は樹脂封
止体９で封止される。Returning to FIG. 4, a chained line 7 is a semiconductor chip fixed to the die pad 5, and each lead portion 4 is wire-bonded with a thin metal wire 8. The semiconductor chip 7 part is sealed with a resin sealing body 9.
上記従来のリードフレームの構造、機能を、次に説明
する。第５図において、リードフレームに装着された半
導体チツプ７部の樹脂封止は、高温で施行される。この
ため、サイドフレーム部２及びタイバー部３には樹脂注
入圧力によつて変形させる応力が働く。また、樹脂封止
完了後の冷却過程においては、樹脂封止体９とリードフ
レームの外枠部1,サイドフレーム部2,タイバー部３及び
リード部４との間には、熱膨張係数差による熱収縮応力
が働く。The structure and function of the conventional lead frame will be described below. In FIG. 5, the resin sealing of the semiconductor chip 7 portion mounted on the lead frame is performed at high temperature. Therefore, the side frame portion 2 and the tie bar portion 3 are deformed by the resin injection pressure. Further, in the cooling process after completion of the resin sealing, there is a difference in thermal expansion coefficient between the resin sealing body 9 and the outer frame portion 1, side frame portion 2, tie bar portion 3 and lead portion 4 of the lead frame. Thermal contraction stress works.
タイバー部３は樹脂封止時の注入樹脂が、リードフレ
ーム外への漏出を防ぐ役目をする。The tie bar portion 3 serves to prevent the injected resin during resin sealing from leaking out of the lead frame.
以上のことから、サイドフレーム部２は、樹脂注入時
の圧力による圧縮応力に耐え、さらに、封止完了後の熱
収縮による引張応力に耐え、ひずみを生じないものが望
まれる。From the above, it is desired that the side frame portion 2 withstands the compressive stress due to the pressure at the time of resin injection, and further withstands the tensile stress due to the heat shrinkage after the completion of the sealing and does not generate the strain.
上記のような従来のリードフレームでは、第４図のよ
うに、サイドフレーム部２に短いスリツト6aを設け圧縮
応力に強い構造にした場合、圧縮に対する変形には強い
が、樹脂封止後熱収縮応力が残留してリードフレーム全
体が変形するという問題点があつた。In the conventional lead frame as described above, as shown in FIG. 4, when the side frame portion 2 is provided with the short slits 6a so as to have a structure resistant to compressive stress, it is resistant to deformation by compression, but heat shrinks after resin sealing. There is a problem that the stress remains and the entire lead frame is deformed.
また、第５図のように、サイドフレーム部２に長いス
リツト6bを設け変形に順応する構造にした場合、樹脂注
入時の圧縮でタイバー部３とサイドフレーム部２が同時
に変形し、リード部４を移動させ金属細線８を断線させ
るという問題点があつた。Further, as shown in FIG. 5, when the side frame portion 2 is provided with a long slit 6b to adapt to the deformation, the tie bar portion 3 and the side frame portion 2 are simultaneously deformed by the compression at the time of resin injection, and the lead portion 4 There is a problem that the metal thin wire 8 is broken by moving the.
この発明は、このような問題点を解決するためになさ
れたもので、樹脂封止時の樹脂注入圧力によるタイバー
部及びサイドフレーム部の変形を防止するとともに、熱
収縮応力による全体の変形を防止する半導体装置用リー
ドフレームを得ることを目的としている。The present invention has been made to solve such a problem, and prevents deformation of the tie bar portion and the side frame portion due to resin injection pressure at the time of resin sealing, and also prevents overall deformation due to heat shrinkage stress. The purpose is to obtain a lead frame for a semiconductor device.
この発明にかかる半導体装置用リードフレームは、サ
イドフレーム部に幅方向に複数のスリツトを設け、各ス
リツト間の仕切部に、くびれ部を設けたものである。In the lead frame for a semiconductor device according to the present invention, a plurality of slits are provided in the side frame portion in the width direction, and a constricted portion is provided in a partition portion between the slits.
この発明においては、樹脂注入圧力による圧縮応力に
対してはサイドフレームの各スリツト間の仕切り部によ
り変形が防止され、樹脂封止後の収縮による引張応力に
対しては、仕切り部が変形して応じ、リードフレーム全
体の変形ひずみが防止される。In the present invention, deformation is prevented by the partition between the slits of the side frame against the compressive stress due to the resin injection pressure, and the partition is deformed against the tensile stress due to the contraction after the resin sealing. Accordingly, deformation distortion of the entire lead frame is prevented.
〔実施例〕 第１図はこの発明による半導体装置用リードフレーム
の一実施例を示す平面図であり、1,3〜９は上記従来の
ものと同一のものである。11はサイドフレーム部で、複
数のスリツト12（図では３箇所）が形成され、各スリツ
ト12間には仕切部13が形成されている。これらサイドフ
レーム部11の各スリツト12間の仕切部13には、第２図の
ようにくびれ部として幅方向にくぼみ溝13bが形成さ
れ、厚さを薄くし断面積が小さくされ、引張り強度を弱
くしてある。仕切部13は、樹脂封止体９の長さに応じ２
〜３箇所設けるようにする。[Embodiment] FIG. 1 is a plan view showing an embodiment of a lead frame for a semiconductor device according to the present invention, in which 1, 3 to 9 are the same as the conventional ones. Reference numeral 11 denotes a side frame portion, in which a plurality of slits 12 (three places in the figure) are formed, and a partition portion 13 is formed between the slits 12. In the partition portion 13 between the slits 12 of the side frame portion 11, as shown in FIG. 2, a groove 13b is formed in the width direction as a constricted portion to reduce the thickness and the cross-sectional area to reduce the tensile strength. It's weakened. The partition portion 13 has a length of 2 depending on the length of the resin sealing body 9.
Set up to 3 places.
第３図はこの考案の異なる他の実施例を示すリードフ
レームのサイドフレーム部の平面図である。サイドフレ
ーム部11の各スリツト12間の式部13には、くびれ部とし
て幅方向の切欠き部13cが形成され、この部分の断面積
を小さくし、引張り強度を弱くしてある。FIG. 3 is a plan view of a side frame portion of a lead frame showing another embodiment of the present invention. A notch portion 13c in the width direction is formed as a constriction portion in the expression portion 13 between the slits 12 of the side frame portion 11, and the cross-sectional area of this portion is made small and the tensile strength is weakened.
第２図，第３図のリードフレームでは、樹脂封止成形
工程において、樹脂注入による圧力に対し、サイドフレ
ーム部11は仕切部13により圧縮応力に耐え、また、樹脂
封止完了後の熱収縮による引張り応力には、仕切部13が
くぼみ溝13b又は切欠き部13cで破断され、サイドフレー
ム部２は両側が応力に応じて変形する。こうして、リー
ドフレーム全体、特に両外枠部１の変形が防止される。In the lead frame shown in FIGS. 2 and 3, the side frame part 11 withstands compressive stress due to the partition part 13 against the pressure due to the resin injection in the resin encapsulation molding process, and the heat shrinkage after the resin encapsulation is completed. The partition portion 13 is broken by the recessed groove 13b or the notch portion 13c due to the tensile stress due to, and both sides of the side frame portion 2 are deformed according to the stress. In this way, deformation of the entire lead frame, especially both outer frame portions 1, is prevented.
以上のように、この発明によれば、リードフレームの
サイドフレーム部に幅方向に複数のスリツトを形成し、
各スリツト間の仕切部にくびれ部を設けたので、樹脂注
入によるサイドフレーム部の圧縮応力を仕切部で耐え、
樹脂封止完了後の引張り応力には、仕切部の破断により
サイドフレーム部が変形し、リードフレーム全体、特に
両外枠部の変形が生じなく、残留応力による樹脂封止半
導体装置の品質低下がなくされる。また、樹脂封止体形
成後の加工工程におけるリードフレーム変形に伴う仕損
じがなくなり、製品歩留りが向上される。As described above, according to the present invention, a plurality of slits are formed in the side frame portion of the lead frame in the width direction,
Since the constriction is provided in the partition between each slit, the partition can withstand the compressive stress of the side frame part due to resin injection.
The tensile stress after completion of resin encapsulation does not cause deformation of the side frame part due to breakage of the partition part, deformation of the entire lead frame, especially both outer frame parts, and deterioration of the quality of the resin encapsulated semiconductor device due to residual stress. Lost. Further, damage due to lead frame deformation in the processing step after forming the resin encapsulant is eliminated, and product yield is improved.
第１図はこの発明による半導体装置用リードフレームの
一実施例の平面図、第２図は第１図のサイドフレーム部
の拡大平面図、第３図はこの発明の他の実施例を示すサ
イドフレーム部の拡大平面図、第４図は従来のリードフ
レームの平面図、第５図は第４図のサイドフレーム部の
拡大平面図、第６図は従来の他の例を示すサイドフレー
ム部の拡大平面図である。 １……外枠部、９……樹脂封止体、11……サイドフレー
ム部、12……スリツト、13……仕切部、13b……くびれ
部（くぼみ溝）、13c……くびれ部（切欠き部）。 なお、図中同一符号は同一又は相当部分を示す。1 is a plan view of an embodiment of a semiconductor device lead frame according to the present invention, FIG. 2 is an enlarged plan view of a side frame portion of FIG. 1, and FIG. 3 is a side view showing another embodiment of the present invention. FIG. 4 is an enlarged plan view of the frame portion, FIG. 4 is a plan view of a conventional lead frame, FIG. 5 is an enlarged plan view of the side frame portion of FIG. 4, and FIG. 6 is a side frame portion showing another example of the conventional side frame portion. It is an enlarged plan view. 1 ... Outer frame part, 9 ... Resin sealing body, 11 ... Side frame part, 12 ... Slit, 13 ... Partition part, 13b ... Constricted part (recessed groove), 13c ... Constricted part (cut) (Notched part). The same reference numerals in the drawings indicate the same or corresponding parts.
Claims (3)
向に間隔をあけ複数箇所にサイドフレーム部が配設され
てあり、これらのサイドフレーム部に幅方向に複数のス
リツトを形成し、各スリツト間の仕切部にくびれ部を形
成したことを特徴とする半導体装置用リードフレーム。1. Outer frame parts on both sides are connected in the width direction, side frame parts are provided at a plurality of positions with a gap in the longitudinal direction, and a plurality of slits are provided in the width direction in these side frame parts. A lead frame for a semiconductor device, characterized in that a constriction is formed in a partition between the slits.
らなる特許請求の範囲第１項記載の半導体装置用リード
フレーム。2. The lead frame for a semiconductor device according to claim 1, wherein the constricted portion of the partition portion is a recessed groove in the width direction.
らなる特許請求の範囲第１項記載の半導体装置用リード
フレーム。3. The lead frame for a semiconductor device according to claim 1, wherein the narrowed portion of the partition portion is a notch portion in the width direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61223361A JP2549634B2 (en) | 1986-09-20 | 1986-09-20 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61223361A JP2549634B2 (en) | 1986-09-20 | 1986-09-20 | Lead frame for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6378561A JPS6378561A (en) | 1988-04-08 |
| JP2549634B2 true JP2549634B2 (en) | 1996-10-30 |
Family
ID=16796948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61223361A Expired - Fee Related JP2549634B2 (en) | 1986-09-20 | 1986-09-20 | Lead frame for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2549634B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03280564A (en) * | 1990-03-29 | 1991-12-11 | Nec Corp | Lead frame |
| JPH04346253A (en) * | 1991-05-23 | 1992-12-02 | Mitsubishi Electric Corp | Lead frame for semiconductor |
| JP2687946B2 (en) * | 1995-08-16 | 1997-12-08 | 日本電気株式会社 | Lead frame |
-
1986
- 1986-09-20 JP JP61223361A patent/JP2549634B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6378561A (en) | 1988-04-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |