JPS6378561A - Lead frame for semiconductor device - Google Patents
Lead frame for semiconductor deviceInfo
- Publication number
- JPS6378561A JPS6378561A JP22336186A JP22336186A JPS6378561A JP S6378561 A JPS6378561 A JP S6378561A JP 22336186 A JP22336186 A JP 22336186A JP 22336186 A JP22336186 A JP 22336186A JP S6378561 A JPS6378561 A JP S6378561A
- Authority
- JP
- Japan
- Prior art keywords
- side frame
- lead frame
- stress
- resin
- partition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000005192 partition Methods 0.000 claims abstract description 23
- 239000011347 resin Substances 0.000 abstract description 30
- 229920005989 resin Polymers 0.000 abstract description 30
- 238000007789 sealing Methods 0.000 abstract description 21
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 3
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 101100194706 Mus musculus Arhgap32 gene Proteins 0.000 description 1
- 101100194707 Xenopus laevis arhgap32 gene Proteins 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003938 response to stress Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、樹脂封止形の半導体装置に用いるリードフ
レームに関し、特に樹脂封止後に生じるリードフレーム
全体の変形を防止する改良にかかわる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead frame used in a resin-sealed semiconductor device, and particularly relates to an improvement for preventing deformation of the entire lead frame that occurs after resin-sealing.
第５図は従来のり−ド７レームを示す平面図である。図
において、ｌは両側の外枠部、２はこれらの外枠部間を
連結するサイドフレーム部、３はタイバ一部、４はリー
ド部、５はダイパッド、６ａはサイドフレーム部２に形
成されたスリットである０
このスリット６ａが形成されたサイドフレーム部２金第
６図に示す。このスリン）６ａの長ざは比較的短くシ、
樹脂封止時の圧縮圧力に対し強いようにしている。FIG. 5 is a plan view showing a conventional board 7 frame. In the figure, l is an outer frame part on both sides, 2 is a side frame part that connects these outer frame parts, 3 is a part of a tie bar, 4 is a lead part, 5 is a die pad, and 6a is formed in the side frame part 2. The side frame portion 2 in which this slit 6a is formed is shown in FIG. The length of this Surin) 6a is relatively short,
It is designed to be resistant to compression pressure during resin sealing.
また、第７因に示すように、サイドフレーム部２に比較
的長いスリン）６ｂｋ形成したものがあった。この場合
は、樹脂封止時の圧扁圧力には弱いが、熱収縮応力が残
留しないようにしている。Furthermore, as shown in the seventh factor, there were some cases in which a relatively long line (6bk) was formed on the side frame portion 2. In this case, although it is weak against the compression pressure during resin sealing, it is ensured that thermal shrinkage stress does not remain.
ｊｌＩＪ５図に返り、鎖線で示す７はダイパッド５に固
着された半導体チップで、各リード部４に金嘱細線８で
ワイヤボンディングされる。この半導体チップ７部は樹
脂封止体９で封止される。Returning to FIG. 5, 7 indicated by a chain line is a semiconductor chip fixed to the die pad 5, and is wire-bonded to each lead portion 4 with a thin gold wire 8. This semiconductor chip 7 portion is sealed with a resin sealing body 9.
上記従来のリードフレームの構造、機能を、次に説明す
る。第５図において、リードフレームに装着された半導
体チップ７部の樹脂封止は、高温で施行される。このた
め、サイドフレーム部２及びタイバ一部３には樹脂注入
圧力によって変形させる応力が働く。また、樹脂封止完
了後の冷却過。The structure and function of the above-mentioned conventional lead frame will be explained next. In FIG. 5, resin sealing of the semiconductor chip 7 mounted on the lead frame is carried out at high temperature. Therefore, the side frame portion 2 and the tie bar portion 3 are subjected to stress that causes them to deform due to the resin injection pressure. In addition, after the resin sealing is completed, cooling is required.
程においては、樹脂封止体９とリードフレームの外枠部
１．サイドフレーム部２．タイバ一部３及びリード部４
との間には、熱膨張係数差による熱収縮応力が働く。In this step, the resin sealing body 9 and the outer frame portion 1 of the lead frame are assembled. Side frame part 2. Tie bar part 3 and lead part 4
Thermal shrinkage stress acts between them due to the difference in thermal expansion coefficient.
タイバ一部３は樹脂封止時の注入樹脂が、リードフレー
ム外への面出を防ぐ役目をする。The tie bar portion 3 serves to prevent the resin injected during resin sealing from protruding outside the lead frame.
以上のことから、サイドフレーム部２は、樹脂注入時の
圧力による圧縮応力に耐え、さらに、封止完了後の熱収
縮による引張応力に耐え、ひずみを生じないものが望ま
れる。In view of the above, it is desirable that the side frame portion 2 be able to withstand compressive stress due to pressure during resin injection, and further withstand tensile stress due to heat shrinkage after completion of sealing, without causing distortion.
上記のような従来のリードフレームでは、第５図のよう
に、サイドフレーム部２に短いスリット６ａヲ設は圧縮
応力に強い構造にした場合、圧縮に対する変形には強い
が、樹脂封止後熱収縮応力が残留してリードフレーム全
体が変形するという問題点があった。In the conventional lead frame as described above, as shown in Fig. 5, the short slit 6a in the side frame portion 2 is resistant to deformation due to compression when the structure is resistant to compressive stress. There was a problem in that shrinkage stress remained and the entire lead frame was deformed.
また、第６図のように、サイドフレーム部２に長いスリ
ット６ｂを設は変形に順応する構造にした場合、樹脂注
入時の圧縮でタイバ一部３とサイドフレーム部２が同時
に変形し、リード部４を移動させ金属細線８を断線させ
るという問題点があった０
この発明は、このような問題点を解決するためになされ
たもので、樹脂封止時の樹脂注入圧力によるタイバ一部
及びサイドフレーム部の変形を防止するとともに、熱収
縮応力による全体の変形を防止する半導体装置用リード
フレームを得ることを目的としている。Furthermore, as shown in Fig. 6, if a long slit 6b is provided in the side frame part 2 to accommodate deformation, the tie bar part 3 and the side frame part 2 will deform at the same time due to compression during resin injection, and the lead There was a problem in that moving the part 4 caused the thin metal wire 8 to break. This invention was made to solve this problem, and the present invention was made in order to solve this problem. The object of the present invention is to obtain a lead frame for a semiconductor device that prevents deformation of a side frame portion and prevents deformation of the entire body due to thermal shrinkage stress.
この発明にかかる半導体装置用リードフレームは、サイ
ドフレーム部に幅方向に複数のスリットを設け、各スリ
ット間の仕切り部に、切断部又はくびれ部を設けたもの
である。The lead frame for a semiconductor device according to the present invention has a side frame portion provided with a plurality of slits in the width direction, and a partition portion between each slit provided with a cut portion or a constricted portion.
この発明においては、樹脂注入圧力による圧縮応力に対
してはサイドフレーム部の各スリット間の仕切り部によ
り変形が防止され、樹脂封止後の収縮による引張応力に
対しては、仕切り部が変形して応じ、リードフレーム全
体の変形ひずみが防止される。In this invention, the partitions between the slits in the side frame portion prevent deformation against compressive stress caused by resin injection pressure, and the partitions prevent deformation against tensile stress caused by shrinkage after resin sealing. Accordingly, deformation strain of the entire lead frame is prevented.
第１図はこの発明による半導体装置用リードフレームの
一実施例を示す平面図であり、’ｐ３〜箇所）が形成さ
れ、各スリット１２間には仕切部１３が形成されている
。これらの仕切部ユ３は第２図に示すように、中間がぜ
ん断加工により切断部１３ａが形成されている。この切
断部１３ａはできるだけすき間ができないように形成さ
れている。FIG. 1 is a plan view showing an embodiment of a lead frame for a semiconductor device according to the present invention, in which a lead frame 'p3~) is formed, and a partition part 13 is formed between each slit 12. As shown in FIG. 2, these partition units 3 have cut portions 13a formed in the middle by shear processing. This cut portion 13a is formed so that there is no gap as much as possible.
上記一実施例のように形成されたリードフレームに半導
体チップ５が装着され、半導体チップ５部が樹脂封止さ
れる。この樹脂封止成形工程において、樹脂注入による
圧力に対し、サイドフレーム部１１は、仕切部１３が切
断部１３ａで当接し、圧縮応力に耐えるようにしている
。樹脂封止完了後の冷却過程では、樹脂封止体９とリー
ドフレームの間に熱収縮応力を生じ、サイドフレーム部
１１は引張フ応力を受けるが、仕切部１３が切断部１３
ａで切断されているため、応力に応じてサイドフレーム
部１１はリードフレームの長手方向に対し分割された両
側が変形し、応力は残留しない。これによシ、リードフ
レーム全体、特に第１図に示す両外枠部１に及ぼす変形
が防がれる。A semiconductor chip 5 is mounted on a lead frame formed as in the above embodiment, and a portion of the semiconductor chip 5 is sealed with resin. In this resin sealing molding process, the side frame part 11 is made to withstand compressive stress by the partition part 13 coming into contact with the cut part 13a against the pressure caused by the resin injection. In the cooling process after resin sealing is completed, heat shrinkage stress is generated between the resin sealant 9 and the lead frame, and the side frame portion 11 receives tensile stress, but the partition portion 13
Since the lead frame is cut at point a, both sides of the side frame portion 11 that are divided in the longitudinal direction of the lead frame are deformed in response to the stress, and no stress remains. This prevents deformation of the entire lead frame, especially both outer frame portions 1 shown in FIG. 1.
ｒＩｃＳ図はこの発明の他の実施例を示すリードフレー
ムのサイドフレーム部の平面図である。サイドフレーム
部１１の各スリット１２間の仕切部１３には、くびれ部
として幅方向にくほみ溝１３ｂが形成され、厚さを薄く
し断面積が小ざくされ、引張ジ強度を弱くしである。仕
切部１３は、樹脂、封止体９の長さに応じ２〜３箇所設
けるようにする。Figure rIcS is a plan view of a side frame portion of a lead frame showing another embodiment of the present invention. In the partition part 13 between each slit 12 of the side frame part 11, a constricted groove 13b is formed in the width direction as a constriction part, and the thickness is reduced and the cross-sectional area is made small, thereby weakening the tensile strength. be. The partition portions 13 are provided at two to three locations depending on the length of the resin and the sealing body 9.
第４図はこの考案の異なる他の実施例を示すリードフレ
ームのサイドフレーム部の平面図である０サイドフレ一
ム部１１の各スリット１２間の仕切部１３には、くびれ
部として幅方向の切欠き部１ｓａが形成され、この部分
の断面積を小さくシ、引張り強度を弱くしである。FIG. 4 is a plan view of a side frame portion of a lead frame showing another embodiment of this invention. In the partition portion 13 between each slit 12 of the side frame portion 11, a widthwise cut is formed as a constriction portion. A cutout portion 1sa is formed, which reduces the cross-sectional area and weakens the tensile strength.
第３図、第４図のリードフレームでは、樹脂封止成形工
程において、樹脂注入による圧力に対し、サイドフレー
ム部１１は仕切部１３により圧縮応力に耐え、また、樹
脂封止完了後の熱収縮による引張り応力には、仕切部１
３がくぼみ溝１３ｂ又は切欠き部１３ｃで破断され、サ
イドフレーム部２は両側が応力に応じて変形する。こう
して、リードフレーム全体、特に内外枠部１の変形が防
止される。In the lead frames shown in FIGS. 3 and 4, in the resin sealing molding process, the side frame portion 11 withstands compressive stress due to the pressure caused by resin injection due to the partition portion 13, and also undergoes heat shrinkage after the resin sealing is completed. The tensile stress due to the partition part 1
3 is broken at the depression groove 13b or notch 13c, and both sides of the side frame portion 2 deform in response to stress. In this way, deformation of the entire lead frame, especially the inner and outer frame portions 1, is prevented.
以上のように、この発明によれば、リードフレームのサ
イドフレーム部に幅方向に複数のスリットを形成し、各
スリット間の仕切部に線状の切断部又はくびれ部を設け
たので、樹脂注入によるサイドフレーム部の圧縮応力を
仕切部で耐え、樹脂封止完了後の引張り応力には、仕切
部の切断部又は破断によりサイドフレーム部が変形し、
リードフレーム全体、特に内外枠部の変形が生じなく、
残留応力による樹脂封止半導体装置の品質低下がなくさ
れる。また、樹脂封止体形成後の加工工程におけるリー
ドフレーム変形に伴う仕損じがなくなり、製品歩留りが
向上される。As described above, according to the present invention, a plurality of slits are formed in the width direction in the side frame portion of the lead frame, and a linear cut portion or constriction portion is provided in the partition between each slit, so that resin injection is possible. The partition part withstands the compressive stress of the side frame part due to the resin sealing, and the side frame part deforms due to the cut or rupture of the partition part due to the tensile stress after the resin sealing is completed.
There is no deformation of the entire lead frame, especially the inner and outer frame parts.
Deterioration in quality of resin-sealed semiconductor devices due to residual stress is eliminated. Further, there is no waste due to deformation of the lead frame in the processing step after forming the resin sealing body, and the product yield is improved.
第１図はこの発明による半導体装置用リードフレームの
一実施例の平面図、第２図は第１図のサイドフレーム部
の拡大平面図、第３図及びＭ４図はこの発明の他のそれ
ぞれ異なる実施例を示すサイドフレーム部の拡大平面図
、第５図は従来のリードフレームの平面図、ｗｃ６図は
第５図のサイドフレーム部の拡大平面図、第７図は従来
の他の例を示すサイドフレーム部の拡大平面図である。
１・・・外枠部、９・・・樹脂封止体、１１・・・サイ
ドフレーム部、１２・・・スリット、１３・・・仕切部
、１３ａ・・・切断部、１３ｂ・・・くびれ部（〈はみ
溝）、１３ｃ・・・くびれ部（切欠き部）。
なお、図中同一符号は同−又は相当部分を示す。FIG. 1 is a plan view of one embodiment of a lead frame for a semiconductor device according to the present invention, FIG. 2 is an enlarged plan view of the side frame portion of FIG. 1, and FIGS. FIG. 5 is an enlarged plan view of a side frame portion showing an embodiment, FIG. 5 is a plan view of a conventional lead frame, wc6 is an enlarged plan view of the side frame portion of FIG. 5, and FIG. 7 is another conventional example. It is an enlarged plan view of a side frame part. DESCRIPTION OF SYMBOLS 1... Outer frame part, 9... Resin sealing body, 11... Side frame part, 12... Slit, 13... Partition part, 13a... Cutting part, 13b... Constriction part (<groove), 13c... constriction part (notch part). Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (3)
隔をあけ複数箇所にサイドフレーム部が配設されてあり
、これらのサイドフレーム部に幅方向に複数のスリット
を形成し、各スリット間の仕切部に幅方向の線状の切断
部又はくびれ部を形成したことを特徴とする半導体装置
用リードフレーム。(1) The outer frame portions on both sides are connected in the width direction, side frame portions are provided at multiple locations at intervals in the longitudinal direction, and multiple slits are formed in these side frame portions in the width direction. A lead frame for a semiconductor device, characterized in that a linear cut portion or constriction portion in the width direction is formed in a partition portion between each slit.
特許請求の範囲第１項記載の半導体装置用リードフレー
ム。(2) The lead frame for a semiconductor device according to claim 1, wherein the constricted portion of the partition portion is a recessed groove in the width direction.
特許請求の範囲第１項記載の半導体装置用リードフレー
ム。(3) The lead frame for a semiconductor device according to claim 1, wherein the constriction of the partition is a notch in the width direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61223361A JP2549634B2 (en) | 1986-09-20 | 1986-09-20 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61223361A JP2549634B2 (en) | 1986-09-20 | 1986-09-20 | Lead frame for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6378561A true JPS6378561A (en) | 1988-04-08 |
| JP2549634B2 JP2549634B2 (en) | 1996-10-30 |
Family
ID=16796948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61223361A Expired - Fee Related JP2549634B2 (en) | 1986-09-20 | 1986-09-20 | Lead frame for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2549634B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03280564A (en) * | 1990-03-29 | 1991-12-11 | Nec Corp | Lead frame |
| JPH04346253A (en) * | 1991-05-23 | 1992-12-02 | Mitsubishi Electric Corp | Lead frame for semiconductor |
| US5763942A (en) * | 1995-08-16 | 1998-06-09 | Nec Corporation | Lead frame free of irregular deformation |
-
1986
- 1986-09-20 JP JP61223361A patent/JP2549634B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03280564A (en) * | 1990-03-29 | 1991-12-11 | Nec Corp | Lead frame |
| JPH04346253A (en) * | 1991-05-23 | 1992-12-02 | Mitsubishi Electric Corp | Lead frame for semiconductor |
| US5763942A (en) * | 1995-08-16 | 1998-06-09 | Nec Corporation | Lead frame free of irregular deformation |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2549634B2 (en) | 1996-10-30 |
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