JP2527779B2 - 圧力センサ - Google Patents
圧力センサInfo
- Publication number
- JP2527779B2 JP2527779B2 JP63014767A JP1476788A JP2527779B2 JP 2527779 B2 JP2527779 B2 JP 2527779B2 JP 63014767 A JP63014767 A JP 63014767A JP 1476788 A JP1476788 A JP 1476788A JP 2527779 B2 JP2527779 B2 JP 2527779B2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- pressure sensor
- cavity
- silicon body
- annular groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873702412 DE3702412A1 (de) | 1987-01-28 | 1987-01-28 | Druckaufnehmer mit einem siliziumkoerper |
| DE3702412.4 | 1987-01-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63191936A JPS63191936A (ja) | 1988-08-09 |
| JP2527779B2 true JP2527779B2 (ja) | 1996-08-28 |
Family
ID=6319654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63014767A Expired - Fee Related JP2527779B2 (ja) | 1987-01-28 | 1988-01-27 | 圧力センサ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5024097A (enExample) |
| EP (1) | EP0276889B1 (enExample) |
| JP (1) | JP2527779B2 (enExample) |
| DE (2) | DE3702412A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0374883A (ja) * | 1989-08-16 | 1991-03-29 | Sanyo Electric Co Ltd | 圧力センサのダイヤフラム製造方法 |
| EP0430681A3 (en) * | 1989-11-30 | 1992-05-20 | Honeywell Inc. | Thick diaphragm pressure transducer |
| ATE107770T1 (de) * | 1989-12-06 | 1994-07-15 | Siemens Ag Albis | Kraftwandler. |
| DE4137624A1 (de) * | 1991-11-15 | 1993-05-19 | Bosch Gmbh Robert | Silizium-chip zur verwendung in einem kraftsensor |
| JP3300060B2 (ja) * | 1992-10-22 | 2002-07-08 | キヤノン株式会社 | 加速度センサー及びその製造方法 |
| NO179651C (no) * | 1994-03-07 | 1996-11-20 | Sinvent As | Trykkmåler |
| NO304328B1 (no) * | 1996-02-27 | 1998-11-30 | Nyfotek As | TrykkmÕler |
| US6240785B1 (en) | 1996-07-22 | 2001-06-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Cryogenic, absolute, high pressure sensor |
| JP3206467B2 (ja) * | 1996-12-25 | 2001-09-10 | トヨタ自動車株式会社 | 太陽電池セルの冷却液封止構造 |
| US6044711A (en) * | 1997-01-10 | 2000-04-04 | Psi-Tronix, Inc. | Force sensing apparatus |
| DE19810756A1 (de) * | 1998-03-12 | 1999-09-23 | Fraunhofer Ges Forschung | Sensoranordnung zur Messung von Druck, Kraft oder Meßgrößen, die sich auf Druck oder Kraft zurückführen lassen, Verfahren zur Herstellung der Sensoranordnung, Sensorelement und Verfahren zur Herstellung des Sensorelements |
| US7152478B2 (en) * | 2000-07-20 | 2006-12-26 | Entegris, Inc. | Sensor usable in ultra pure and highly corrosive environments |
| US6612175B1 (en) | 2000-07-20 | 2003-09-02 | Nt International, Inc. | Sensor usable in ultra pure and highly corrosive environments |
| US7028552B2 (en) * | 2004-05-17 | 2006-04-18 | Kavlico Corporation | Reliable piezo-resistive pressure sensor |
| CN101209382B (zh) * | 2006-12-27 | 2010-06-23 | 鸿富锦精密工业(深圳)有限公司 | 动作传感装置 |
| DE102011006922B4 (de) * | 2011-04-07 | 2013-07-11 | SIOS Meßtechnik GmbH | Messwandler für die Sensortechnik |
| DE102011112935B4 (de) * | 2011-09-13 | 2015-02-12 | Micronas Gmbh | Kraftsensor |
| DE102014119400A1 (de) * | 2014-12-22 | 2016-06-23 | Endress + Hauser Gmbh + Co. Kg | Druckwandler und Verfahren zum Betreiben eines solchen |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3641812A (en) * | 1970-05-20 | 1972-02-15 | Conrac Corp | Silicon diaphragm with integral bridge transducer |
| US3820401A (en) * | 1972-11-07 | 1974-06-28 | Sperry Rand Corp | Piezoresistive bridge transducer |
| DE2617731C3 (de) * | 1976-04-23 | 1979-06-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Miniaturdruckmeßwandler |
| JPS5750479A (en) * | 1980-09-10 | 1982-03-24 | Hitachi Ltd | Detector for detecting pressure and pressure difference of semiconductor |
| US4444054A (en) * | 1982-08-30 | 1984-04-24 | Ametek, Inc. | Temperature compensation for diffused semiconductor strain devices |
| JPS5952727A (ja) * | 1982-09-20 | 1984-03-27 | Hitachi Ltd | 半導体圧力センサ |
| GB2128806A (en) * | 1982-09-29 | 1984-05-02 | Itt Ind Ltd | Pressure transducer |
| US4462018A (en) * | 1982-11-05 | 1984-07-24 | Gulton Industries, Inc. | Semiconductor strain gauge with integral compensation resistors |
| US4528855A (en) * | 1984-07-02 | 1985-07-16 | Itt Corporation | Integral differential and static pressure transducer |
| US4592238A (en) * | 1985-04-15 | 1986-06-03 | Gould Inc. | Laser-recrystallized diaphragm pressure sensor and method of making |
-
1987
- 1987-01-28 DE DE19873702412 patent/DE3702412A1/de active Granted
-
1988
- 1988-01-20 DE DE8888200095T patent/DE3877006D1/de not_active Expired - Fee Related
- 1988-01-20 EP EP88200095A patent/EP0276889B1/de not_active Expired - Lifetime
- 1988-01-27 JP JP63014767A patent/JP2527779B2/ja not_active Expired - Fee Related
-
1989
- 1989-09-20 US US07/411,193 patent/US5024097A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0276889B1 (de) | 1992-12-30 |
| DE3877006D1 (de) | 1993-02-11 |
| US5024097A (en) | 1991-06-18 |
| EP0276889A3 (en) | 1990-07-04 |
| DE3702412C2 (enExample) | 1990-01-04 |
| JPS63191936A (ja) | 1988-08-09 |
| DE3702412A1 (de) | 1988-08-18 |
| EP0276889A2 (de) | 1988-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |