JP2513785B2 - Ultrasonic wire bonding method - Google Patents
Ultrasonic wire bonding methodInfo
- Publication number
- JP2513785B2 JP2513785B2 JP63147658A JP14765888A JP2513785B2 JP 2513785 B2 JP2513785 B2 JP 2513785B2 JP 63147658 A JP63147658 A JP 63147658A JP 14765888 A JP14765888 A JP 14765888A JP 2513785 B2 JP2513785 B2 JP 2513785B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- pad
- lead
- bonding tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
- H01L2224/78314—Shape
- H01L2224/78317—Shape of other portions
- H01L2224/78318—Shape of other portions inside the capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
Description
【発明の詳細な説明】 〔概要〕 超音波ワイヤボンデイング方法に関し、 ワイヤの折り曲げた部分のバラツキを無くし、ボンデ
イングにかかる時間の短縮を目的とし、 ワイヤ（５）がボンデイングツール（４）に対して、
斜めに挿入している超音波ワイヤボンデイング装置を使
って、 パッケージ（１）上に、パッド（３）を有するウエハ
（２）と、リード（６）を備えた半導体装置に対して、 該パッド（３）に該ワイヤ（５）を接続する第１ボン
デイングのとき、前記ボンデイングツール（４）を該パ
ッド（３）に対して斜めに下降させて、該ワイヤ（５）
の折り曲げとボンデイングを同時に行った後、 該ワイヤ（５）を該リード（６）に接続する第２ボン
デイングを行うことを特徴とする。DETAILED DESCRIPTION OF THE INVENTION [Outline] Regarding an ultrasonic wire bonding method, a wire (5) is attached to a bonding tool (4) for the purpose of eliminating the variation in the bent portion of the wire and shortening the bonding time. ,
By using an ultrasonic wire bonding apparatus that is obliquely inserted, a semiconductor device having a wafer (2) having a pad (3) and leads (6) on a package (1) is attached to the pad ( At the time of the first bonding for connecting the wire (5) to the wire (5), the bonding tool (4) is slanted down with respect to the pad (3),
After the bending and the bonding are simultaneously performed, a second bonding for connecting the wire (5) to the lead (6) is performed.
〔産業上の利用分野〕 本発明は、超音波ワイヤボンデイング方法に関するも
のである。[Field of Industrial Application] The present invention relates to an ultrasonic wire bonding method.
半導体集積回路装置等の製造では、チップ上のボンデ
イングパッドとパッケージ内部のリードをワイヤで接続
する方法としてワイヤボンデイング方法が知られてい
る。In the manufacture of semiconductor integrated circuit devices and the like, a wire bonding method is known as a method of connecting a bonding pad on a chip and a lead inside a package with a wire.
従来の超音波ワイヤボンデイング方法を、第３図を用
いて説明する。A conventional ultrasonic wire bonding method will be described with reference to FIG.
図中、１はパッケージ、２はチップ、３はパッド、４
は超音波により振動するボンデイングツール、５はワイ
ヤ、６はパッケージ内部のリード、７はクランパであ
る。In the figure, 1 is a package, 2 is a chip, 3 is a pad, 4
Is a bonding tool vibrated by ultrasonic waves, 5 is a wire, 6 is a lead inside the package, and 7 is a clamper.
まず第１ボンデイングとして、ワイヤ５がボンデイン
グツール４先端で折れ曲がっている状態（第３図
（ａ））のままで、ボンデイングツール４をチップ２上
のパッド３に垂直に下降させる。First, as the first bonding, the bonding tool 4 is vertically lowered to the pad 3 on the chip 2 while the wire 5 is bent at the tip of the bonding tool 4 (FIG. 3 (a)).
その後、第３図（ｂ）に示すように、ボンデイングツ
ール４を超音波で振動させてワイヤ５をパッド３に接続
する。Then, as shown in FIG. 3 (b), the bonding tool 4 is vibrated with ultrasonic waves to connect the wire 5 to the pad 3.
次に、第３図（ｃ）に示すように、ボンデイングツー
ル４を矢印の如く垂直に上昇させて、第２ボンデイング
を行うリード６の上方まで平行に移動させる。Next, as shown in FIG. 3 (c), the bonding tool 4 is lifted vertically as indicated by the arrow and moved in parallel to above the lead 6 for the second bonding.
次に第２ボンデイングとして、第３図（ｄ）に示すよ
うに、ボンデイングツール４をリード６に垂直に下降さ
せ、超音波振動でワイヤ５をリード６に接続した後、ク
ランパ７でワイヤ５を引き上げて切断する。Next, as the second bonding, as shown in FIG. 3 (d), the bonding tool 4 is vertically lowered to the lead 6 and the wire 5 is connected to the lead 6 by ultrasonic vibration, and then the wire 5 is clamped by the clamper 7. Pull up and cut.
その後、第３図（ｅ）に示すように、ボンデイングツ
ール４を矢印の如く垂直に上昇させながら、ワイヤ５を
クランパ７で押し出す。After that, as shown in FIG. 3 (e), the wire 5 is pushed out by the clamper 7 while vertically raising the bonding tool 4 as indicated by the arrow.
次に、第１ボンデイングに備え、ボンデイングツール
４先端でワイヤ５の折れ曲がりの状態を作るために、第
３図（ｆ）に示すように、ボンデイングツール４を矢印
の如くリード面に対し平行に移動させ、リード６に垂直
に下降させる。Next, in preparation for the first bonding, in order to make a bent state of the wire 5 at the tip of the bonding tool 4, as shown in FIG. 3 (f), the bonding tool 4 is moved parallel to the lead surface as shown by the arrow. Then, the lead 6 is lowered vertically.
その後、ボンデイングツール４をリード６に垂直に下
降させることで、第３図（ｇ）に示すように、ワイヤ５
はリード６上で押し曲げられ、第１ボンデイングに必要
なワイヤ５がボンデイングツール４先端で折れ曲がって
いる状態を作り、ボンデイングツール４は垂直に上昇す
る。Then, by lowering the bonding tool 4 vertically to the leads 6, as shown in FIG.
Is pressed and bent on the lead 6, and the wire 5 necessary for the first bonding is bent at the tip of the bonding tool 4, and the bonding tool 4 rises vertically.
そして、再びボンデイングツール４がパッド３の上方
に移動して第１ボンデイングをする工程を繰り返し行う
ことにより、１つの半導体装置のワイヤボンデイングが
完了する。Then, the wire bonding of one semiconductor device is completed by repeating the step of moving the bonding tool 4 above the pad 3 and performing the first bonding again.
近年の半導体装置では、高集積化や高機能化、又はチ
ップの大型化やパッケージの小型化が進んでいるため、
従来の超音波ボンデイング方法では解決できない問題が
生じてきた。In recent years, semiconductor devices have been highly integrated and highly functionalized, or the size of a chip and the size of a package have been reduced.
Problems have arisen that cannot be solved by conventional ultrasonic bonding methods.
第１に、パッケージ１が小型化し、内部に装着される
チップ２が大型化しているため、パッケージ１上のリー
ド６を設ける部分が狭くなる。それにより、第４図に示
すように、第２ボンデイング後のワイヤ５をリード６上
で押し曲げるときに、斜めから挿入してあるワイヤ５が
パッケージ１に当たり、ボンデイングができない。そこ
で、ボンデイングを行うために、ワイヤ５の挿入してい
る傾斜を大きくする必要があった。First, since the package 1 is downsized and the chip 2 mounted therein is upsized, the portion where the leads 6 on the package 1 are provided becomes narrow. As a result, as shown in FIG. 4, when the wire 5 after the second bonding is pressed and bent on the lead 6, the wire 5 obliquely inserted hits the package 1 and bonding cannot be performed. Therefore, in order to perform bonding, it is necessary to increase the inclination of inserting the wire 5.
ところが、第２ボンデイング後のワイヤ５の押し曲げ
工程を行なう際、ワイヤ５の挿入している傾斜が大きい
とき、ボンデイングツール４が垂直に下降してワイヤ５
がリード６に当たる衝撃と、ボンデイングツール４によ
るワイヤ５の押し曲げのため、第５図に示すように、ワ
イヤ５がボンデイングツール４の先端とクランパ７との
間に押し戻されてたわみ、ワイヤ５の押し曲げ部分９の
長さにバラツキを生じる。However, when the wire 5 is pushed and bent after the second bonding, and the wire 5 is inserted at a large inclination, the bonding tool 4 is vertically lowered to move the wire 5.
As a result of the impact of the contact with the lead 6 and the bending and bending of the wire 5 by the bonding tool 4, the wire 5 is pushed back between the tip of the bonding tool 4 and the clamper 7 as shown in FIG. The length of the push-bend portion 9 varies.
その結果、ワイヤ５の押し曲げ部分９が短くなる場合
に接続部分が小さくなり、接続不良や歩留りの悪化とい
う問題が生じてきた。As a result, when the push-bend portion 9 of the wire 5 becomes short, the connection portion becomes small, which causes problems such as poor connection and poor yield.
また、リード６を設ける部分が狭くなると、第３図
（ｆ）、（ｇ）に示すような、第２ボンデイング後にお
けるワイヤ５の押し曲げ工程を行なう場所が無いため
に、ワイヤ５の押し曲げ工程を行なうことが困難となっ
た。Further, when the portion where the lead 6 is provided becomes narrow, there is no place for performing the step of pushing and bending the wire 5 after the second bonding as shown in FIGS. 3 (f) and 3 (g). It became difficult to carry out the process.
第２に、半導体装置の高集積化、高機能化により、パ
ッド３及びリード６の個数も増加し、加えて、第３図
（ｅ）から第３図（ｇ）に示すような、第２ボンデイン
グ後のワイヤ５の押し曲げ工程を行っているため、１チ
ップ当たりのボンデイングに時間が長くかかり、生産性
の悪化という問題が生じてきた。Secondly, the number of pads 3 and leads 6 is increased due to the higher integration and higher functionality of the semiconductor device. In addition, the second and third functions as shown in FIGS. 3 (e) to 3 (g) are also added. Since the wire 5 is pressed and bent after the bonding, it takes a long time to bond one chip, which causes a problem of deterioration of productivity.
従って、本発明は、ワイヤ５の押し曲げた部分９の長
さに生じるバラツキを無くし、１チップ当たりのボンデ
イングにかかる時間の短縮を目的とするものである。Therefore, it is an object of the present invention to eliminate variations in the length of the push-bent portion 9 of the wire 5 and to reduce the bonding time per chip.
第１図は本発明の原理説明図であり、第１ボンデイン
グ部分の拡大断面図である。FIG. 1 is an explanatory view of the principle of the present invention and is an enlarged sectional view of a first bonding portion.
本発明によれば、第１ボンデイング時において、ボン
デイングツール４をパッド３に対して斜めに動かして、
チップ２上のパッド３でワイヤ５の折り曲げとボンデイ
ングを同時に行い、その後、ワイヤ５とリード６を接続
する第２ボンデイングを行うものである。According to the present invention, during the first bonding, the bonding tool 4 is moved obliquely with respect to the pad 3,
The wire 3 is bent and bonded at the same time by the pad 3 on the chip 2, and then the second bonding for connecting the wire 5 and the lead 6 is performed.
具体的には、第１ボンデイングを行なうとき、ボンデ
イングツール４の案内孔８からワイヤ５がまっすぐに延
びている状態で、矢印Ａで示すように、ボンデイングツ
ール４がパッド３に対し、斜めに移動してワイヤ５をパ
ッド３に当てる。その後、ワイヤ５を折り曲げてパッド
３と接すると同時に超音波振動でボンデイングを行う。Specifically, when performing the first bonding, the bonding tool 4 moves diagonally with respect to the pad 3 as indicated by an arrow A in a state where the wire 5 extends straight from the guide hole 8 of the bonding tool 4. Then, the wire 5 is applied to the pad 3. Then, the wire 5 is bent and brought into contact with the pad 3, and at the same time, bonding is performed by ultrasonic vibration.
その後、第２ボンデイングを行うため、ボンデイング
ツール４をリード６の上方へ移動し、下降させてワイヤ
５とリード６を接続する。Then, in order to perform the second bonding, the bonding tool 4 is moved above the lead 6 and lowered to connect the wire 5 and the lead 6.
そして、再びボンデイングツール４がパッド３の上方
に移動して第１ボンデイングをする工程を繰り返し行う
ことにより、１つの半導体装置のワイヤボンデイングが
完了する。Then, the wire bonding of one semiconductor device is completed by repeating the step of moving the bonding tool 4 above the pad 3 and performing the first bonding again.
本発明では、第１図に示すように、第１ボンデイング
におけるワイヤの折り曲げのとき、ワイヤ５が案内孔８
から通りまっすぐに延びている状態のボンデイングツー
ル４を、矢印Ａで示すようにパッド３に対して斜め方向
に動かす。そうするとことで、ワイヤ５の先端がパッド
３に当たり、ワイヤ５はボンデイングツール４とワイヤ
５の接触点で徐々に折り曲げられるため、ワイヤ５はた
るまずに折れ曲がり、十分な長さのワイヤ先端をパッド
３に接してボンデイングを行うことができる。In the present invention, as shown in FIG. 1, when the wire is bent in the first bonding, the wire 5 is guided by the guide hole 8
The bonding tool 4, which extends straight from and is extended straight, is moved diagonally with respect to the pad 3 as indicated by arrow A. By doing so, the tip of the wire 5 hits the pad 3, and the wire 5 is gradually bent at the contact point between the bonding tool 4 and the wire 5, so that the wire 5 bends without sagging, and the wire tip having a sufficient length is placed on the pad 3. Bonding can be done by touching.
また、第１ボンデイング時に、ワイヤ５の折り曲げを
行うことで、従来行われていた第２ボンデイング後のワ
イヤ５の押し曲げが不要となり、ワイヤ５とリード６を
接続する第２ボンデイングのみを行えばよいため、リー
ド６の長さを十分に短くでき、パッケージの小型化がで
きる。In addition, by bending the wire 5 during the first bonding, the pressing and bending of the wire 5 after the second bonding which is conventionally performed is unnecessary, and only the second bonding for connecting the wire 5 and the lead 6 is required. Since it is good, the length of the lead 6 can be sufficiently shortened, and the package can be downsized.
さらに、第１ボンデイングのとき、ワイヤ５の折り曲
げとボンデイングを同時に行うことで、従来行われてい
た第２ボンデイング後のリード６上でのワイヤ５の押し
曲げ工程が不要となり、超音波ボンデイング方法の工程
を減らすことができる。Further, by bending and bonding the wire 5 at the same time during the first bonding, the step of pushing and bending the wire 5 on the lead 6 after the second bonding, which has been conventionally performed, becomes unnecessary, and the ultrasonic bonding method The number of steps can be reduced.
第２図は、本発明の一実施例図である。図中、矢印は
ボンデイングツール４の動く軌跡を示し、第１図で示し
たものと同一のものは同一の記号で示してある。FIG. 2 is a diagram showing an embodiment of the present invention. In the figure, the arrow indicates the locus of movement of the bonding tool 4, and the same parts as those shown in FIG. 1 are indicated by the same symbols.
第２図では、チップ２に対してワイヤ５の挿入する傾
斜の角度θが、45℃以上である場合の超音波ワイヤポン
デイング方法の工程を示している。FIG. 2 shows the steps of the ultrasonic wire bonding method when the angle θ of inclination of the wire 5 with respect to the chip 2 is 45 ° C. or more.
第１ボンデイングを行うとき、第２図（ａ）に示すよ
うに、ワイヤ５がパッド３に対して角度θをなしている
ボンデイングツール４を、ワイヤ３に対して矢印Ｂのよ
うに直角をなす方向に動かして、ワイヤ５をパッド３に
当てて折り曲げる。When performing the first bonding, as shown in FIG. 2A, the bonding tool 4 in which the wire 5 makes an angle θ with the pad 3 is formed at a right angle with respect to the wire 3 as indicated by an arrow B. The wire 5 is applied to the pad 3 and bent by moving in the direction.
その後、第２図（ｂ）の状態で、ボンデイングツール
４を超音波で振動させ、ワイヤ５をパッド３に接続す
る。After that, in the state of FIG. 2B, the bonding tool 4 is vibrated by ultrasonic waves to connect the wire 5 to the pad 3.
ここで、ボンデイングツール４がパッド３に対して斜
めに動き、ワイヤ５をパッド３に接続するために、その
ときのパッド３に生じる衝撃は小さく、パッド３を傷め
ることは極めて少ない。Here, since the bonding tool 4 moves obliquely with respect to the pad 3 and the wire 5 is connected to the pad 3, the impact generated on the pad 3 at that time is small and the pad 3 is hardly damaged.
また、ボンデイングツール４を斜めに移動させるに
は、ボンデイングツール４を保持する超音波ホーン（図
示しない）に、パッド３に対して水平に移動可能となる
ボンデイングツール４を設け、ボンデイングツール４の
水平移動、及び下降移動を同時に行うことで容易に実施
できる。これと別の方法として、XYテーブル（図示しな
い）をワイヤ５の挿入方向へ動かしながら、ボンデイン
グツール４を下降させることにより、パッド３に対する
ボンデイングツール４の斜め移動を実施できる。In order to move the bonding tool 4 diagonally, an ultrasonic horn (not shown) holding the bonding tool 4 is provided with the bonding tool 4 which can be moved horizontally with respect to the pad 3, and the bonding tool 4 is moved horizontally. This can be easily performed by simultaneously performing the movement and the descending movement. As another method, the bonding tool 4 can be moved obliquely with respect to the pad 3 by lowering the bonding tool 4 while moving the XY table (not shown) in the insertion direction of the wire 5.
次に、第２図（ｃ）に示すように、ボンデイングツー
ル４は矢印の如く垂直に上昇して、第２ボンデイングを
行うリード６の上方まで平行に移動する。Next, as shown in FIG. 2 (c), the bonding tool 4 vertically rises as indicated by the arrow and moves in parallel to above the lead 6 for the second bonding.
ボンデイングツール４がリード６の上方まで移動する
と、第２図（ｄ）に示すように、ボンデイングツール４
はリード６に垂直に下降し、ワイヤ５をリード６に接触
させて、超音波振動によりワイヤ５をパッド３に接続し
たのち、クランパ７でワイヤ５を引き上げて切断する。When the bonding tool 4 is moved to above the lead 6, as shown in FIG.
Descends perpendicularly to the lead 6, contacts the wire 5 with the lead 6, connects the wire 5 to the pad 3 by ultrasonic vibration, and then pulls the wire 5 with a clamper 7 to cut it.
次に、第２図（ｅ）に示すように、ボンデイングツー
ル４を矢印の如く垂直に上昇させながら、クランパ７で
ワイヤ５を押し出す。Next, as shown in FIG. 2 (e), the wire 5 is pushed out by the clamper 7 while vertically raising the bonding tool 4 as indicated by the arrow.
そして、再びボンデイングツール４がパッド３の上方
へ移動し、第１ボンデイングをするという工程を繰り返
し行い、１つの半導体装置のワイヤボンデイングが完了
する。Then, the bonding tool 4 again moves above the pad 3 and the first bonding process is repeated, and the wire bonding of one semiconductor device is completed.
上記の実施例に示すように、第１ボンデイング時にお
いて、ボンデイングツール４がパッド３に対して斜めに
動き、チップ２上のパッド３でワイヤ５の折り曲げとボ
ンデイングを同時に行う。その後、第２ボンデイングに
おいて、ワイヤ５とリード６を接続し、再び第１ボンデ
イングへと移行する超音波ワイヤボンデイング方法の工
程を行なう。As shown in the above embodiment, at the time of the first bonding, the bonding tool 4 moves obliquely with respect to the pad 3, and the pad 3 on the chip 2 bends the wire 5 and bonds at the same time. Then, in the second bonding, the wire 5 and the lead 6 are connected, and the step of the ultrasonic wire bonding method of shifting to the first bonding again is performed.
そのような工程を行なうことで、パッド３に対するワ
イヤ５の挿入する傾斜の角度θが、45度以上の角度で挿
入されている場合でも、ボンデイングツール４を斜めに
動かしてボンデイングすることにより、ワイヤ５はボン
デイングツール４とワイヤの接触点で徐々に折り曲げら
れるため、ワイヤのたわみが無くなり、次の工程の第１
ボンデイングで、正確なボンデイングを行うことができ
るようになった。By performing such a step, even if the angle of inclination θ of the wire 5 with respect to the pad 3 is inserted at an angle of 45 degrees or more, the bonding tool 4 is moved diagonally to bond the wire. Since the wire 5 is gradually bent at the contact point between the bonding tool 4 and the wire, the wire does not bend and the first step of the next step
With Bonding, you can now do accurate bonding.
また、第２ボンデイングでは、ワイヤ５とリード６を
接続するボンデイングのみを行えばよいため、リード６
の長さを十分に短くできるようになった。Further, in the second bonding, since only the bonding for connecting the wire 5 and the lead 6 needs to be performed, the lead 6
The length of can be shortened sufficiently.
加えて、第１ボンデイングのとき、ワイヤ５の折り曲
げとボンデイングを同時に行うことで、第２ボンデイン
グの後のリード６上でのワイヤ５の押し曲げ工程が不要
となり、ワイヤの折り曲げの工程を削減することができ
製造時間の短縮ができるようになった。In addition, by bending and bonding the wire 5 at the same time during the first bonding, the step of pushing and bending the wire 5 on the lead 6 after the second bonding becomes unnecessary, and the step of bending the wire is reduced. The manufacturing time can be shortened.
なお、上記実施例は本発明の一実施例を記したものに
すぎない。よって、種々の変形が可能であり、例えば、
実施例ではボンデイングツール４を直線的にを動かした
が、曲線を描くように動かしても良く、また、パッド３
に対するワイヤ５の傾斜角θに対し、ボンデイングツー
ル４の動く角度は、直角でなくても良い。It should be noted that the above-mentioned embodiment is merely a description of one embodiment of the present invention. Therefore, various modifications are possible, for example,
Although the bonding tool 4 is moved linearly in the embodiment, it may be moved in a curved line.
The angle of movement of the bonding tool 4 does not have to be a right angle with respect to the inclination angle θ of the wire 5 with respect to.
以上説明したように、本発明の超音波ワイヤボンデイ
ング方法によれば、ボンデイングツールをパッドに対し
て斜めに当て、ワイヤ折り曲げの工程とボンデイングと
を同時に行うもので、ボンデイングツール先端とクラン
パの間で生じるワイヤのたるみを無すことができ、加え
て、工程を簡略する効果を奏し、正確なボンデイングと
製造時間の短縮ができ、生産性の向上に寄与するところ
が大きい。As described above, according to the ultrasonic wire bonding method of the present invention, the bonding tool is obliquely applied to the pad, and the wire bending step and the bonding are performed at the same time. The slack of the wire that occurs can be eliminated, and in addition, the effect of simplifying the process can be achieved, the accurate bonding and the shortening of the manufacturing time can be performed, and it greatly contributes to the improvement of the productivity.
第１図は本発明の原理説明図、第２図は本発明の一実施
例図、第３図は従来例図、第４図はワイヤとパッケージ
の接触の問題を説明する図、第５図はワイヤのたるみの
問題を説明する図である。 図中、 1:パッケージ 2:チップ 3:パッド 4:ボンデイングツール 5:ワイヤ 6:リード 7:クランパ 8:案内孔 9:ワイヤの折り曲げた部分FIG. 1 is a diagram explaining the principle of the present invention, FIG. 2 is an embodiment diagram of the present invention, FIG. 3 is a conventional example diagram, FIG. 4 is a diagram explaining the problem of contact between a wire and a package, and FIG. FIG. 6 is a diagram illustrating a problem of slack in a wire. In the figure, 1: Package 2: Chip 3: Pad 4: Bonding tool 5: Wire 6: Lead 7: Clamper 8: Guide hole 9: Bent part of wire
Claims (1)
に対して、斜めに挿入している超音波ワイヤボンデイン
グ装置を使って、 パッケージ（１）上に、パッド（３）を有するウエハ
（２）と、リード（６）を備えた半導体装置に対して、 該パッド（３）に該ワイヤ（５）を接続する第１ボンデ
イングのとき、前記ボンデイングツール（４）を該パッ
ド（３）に対して斜めに下降させて、該ワイヤ（５）の
折り曲げとボンデイングを同時に行った後、 該ワイヤ（５）を該リード（６）に接続する第２ボンデ
イングを行うことを特徴とする超音波ワイヤボンデイン
グ方法。1. A wire (5) is a bonding tool (4).
On the other hand, with respect to the semiconductor device having the wafer (2) having the pad (3) and the lead (6) on the package (1) using the ultrasonic wire bonding device obliquely inserted. During the first bonding for connecting the wire (5) to the pad (3), the bonding tool (4) is lowered obliquely with respect to the pad (3) to bend the wire (5). An ultrasonic wire bonding method, characterized in that after the bonding is carried out at the same time, a second bonding for connecting the wire (5) to the lead (6) is carried out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63147658A JP2513785B2 (en) | 1988-06-15 | 1988-06-15 | Ultrasonic wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63147658A JP2513785B2 (en) | 1988-06-15 | 1988-06-15 | Ultrasonic wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01315152A JPH01315152A (en) | 1989-12-20 |
| JP2513785B2 true JP2513785B2 (en) | 1996-07-03 |
Family
ID=15435338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63147658A Expired - Fee Related JP2513785B2 (en) | 1988-06-15 | 1988-06-15 | Ultrasonic wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2513785B2 (en) |
-
1988
- 1988-06-15 JP JP63147658A patent/JP2513785B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01315152A (en) | 1989-12-20 |
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