JP2025513151A - 光電検出器及び電子デバイス - Google Patents

光電検出器及び電子デバイス Download PDF

Info

Publication number
JP2025513151A
JP2025513151A JP2024542354A JP2024542354A JP2025513151A JP 2025513151 A JP2025513151 A JP 2025513151A JP 2024542354 A JP2024542354 A JP 2024542354A JP 2024542354 A JP2024542354 A JP 2024542354A JP 2025513151 A JP2025513151 A JP 2025513151A
Authority
JP
Japan
Prior art keywords
signal line
electrode
bias signal
connection
photoelectric detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024542354A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025513151A5 (https=
Inventor
ジャン、グアン
リー、ジンイー
ワン、ジェンイー
ジャン、ジェンウー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Beijing BOE Sensor Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Publication of JP2025513151A publication Critical patent/JP2025513151A/ja
Publication of JP2025513151A5 publication Critical patent/JP2025513151A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2024542354A 2022-04-28 2022-04-28 光電検出器及び電子デバイス Pending JP2025513151A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2022/089699 WO2023206185A1 (zh) 2022-04-28 2022-04-28 光电探测器及电子设备

Publications (2)

Publication Number Publication Date
JP2025513151A true JP2025513151A (ja) 2025-04-24
JP2025513151A5 JP2025513151A5 (https=) 2025-05-02

Family

ID=88516729

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2024542354A Pending JP2025513151A (ja) 2022-04-28 2022-04-28 光電検出器及び電子デバイス
JP2024543876A Pending JP2025512221A (ja) 2022-04-28 2023-04-27 検出基板及びフラットパネル検出器

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024543876A Pending JP2025512221A (ja) 2022-04-28 2023-04-27 検出基板及びフラットパネル検出器

Country Status (5)

Country Link
US (1) US12461254B2 (https=)
JP (2) JP2025513151A (https=)
CN (2) CN117321769A (https=)
GB (2) GB2629531A (https=)
WO (2) WO2023206185A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115704784A (zh) * 2021-08-05 2023-02-17 北京京东方传感技术有限公司 平板探测器和检测装置
CN118039661A (zh) * 2024-02-21 2024-05-14 北京京东方传感技术有限公司 探测面板、制备探测面板的方法和平板探测器
US12557423B2 (en) * 2024-07-18 2026-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Image-sensor structure and method of making thereof

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4118154A1 (de) * 1991-06-03 1992-12-10 Philips Patentverwaltung Anordnung mit einer sensormatrix und einer ruecksetzanordnung
EP0523784A1 (en) * 1991-07-15 1993-01-20 Philips Electronics Uk Limited An image detector and a method of manufacturing such an image detector
JPH11331703A (ja) * 1998-03-20 1999-11-30 Toshiba Corp 撮像装置
JP3683463B2 (ja) 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
US20040246355A1 (en) 2003-06-06 2004-12-09 Ji Ung Lee Storage capacitor array for a solid state radiation imager
CN100505284C (zh) 2004-06-18 2009-06-24 皇家飞利浦电子股份有限公司 X射线图像检测器
JP2006208753A (ja) 2005-01-28 2006-08-10 Seiko Epson Corp 液晶装置及び電子機器
WO2006114722A1 (en) * 2005-04-27 2006-11-02 Koninklijke Philips Electronics N.V. Digital flat x-ray detector
JP2009267343A (ja) 2008-10-29 2009-11-12 Epson Imaging Devices Corp 固体撮像装置およびその製造方法
US8791419B2 (en) 2010-12-15 2014-07-29 Carestream Health, Inc. High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same
CN102157533B (zh) 2011-01-18 2013-07-17 江苏康众数字医疗设备有限公司 具有存储电容结构的非晶硅图像传感器
CN102306653A (zh) 2011-06-09 2012-01-04 上海奕瑞光电子科技有限公司 一种平板x射线探测器
CN103904086B (zh) 2012-12-24 2017-10-27 上海天马微电子有限公司 一种薄膜晶体管阵列基板
KR102315094B1 (ko) 2014-11-13 2021-10-20 엘지디스플레이 주식회사 고 개구율 유기발광 다이오드 표시장치 및 그 제조방법
KR20180088439A (ko) * 2016-01-06 2018-08-03 도시바 덴시칸 디바이스 가부시키가이샤 방사선 검출기
CN106169484B (zh) * 2016-08-18 2019-04-26 上海箩箕技术有限公司 自发光显示阵列基板及其使用方法
KR101843284B1 (ko) * 2016-09-30 2018-03-28 엘지디스플레이 주식회사 디지털 엑스레이 검출장치 및 그 제조방법
CN109830563B (zh) 2019-02-26 2022-07-19 京东方科技集团股份有限公司 探测面板及其制作方法
CN110416278B (zh) 2019-08-06 2022-09-27 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN110854147B (zh) 2019-11-19 2022-04-22 京东方科技集团股份有限公司 一种探测基板及其制作方法
JP7483359B2 (ja) 2019-12-04 2024-05-15 株式会社ジャパンディスプレイ 半導体装置
CN111653581B (zh) 2020-06-17 2023-12-01 京东方科技集团股份有限公司 探测基板及射线探测器
CN115117099B (zh) 2021-03-17 2026-01-23 京东方科技集团股份有限公司 探测基板、其制作方法及平板探测器
CN113406832B (zh) * 2021-06-24 2023-01-24 昆山龙腾光电股份有限公司 Tft阵列基板及其驱动方法

Also Published As

Publication number Publication date
CN117321782A (zh) 2023-12-29
WO2023208149A9 (zh) 2023-11-30
GB2629699A (en) 2024-11-06
US20240302543A1 (en) 2024-09-12
GB2629531A (en) 2024-10-30
WO2023208149A1 (zh) 2023-11-02
WO2023206185A1 (zh) 2023-11-02
JP2025512221A (ja) 2025-04-17
GB202410422D0 (en) 2024-08-28
US12461254B2 (en) 2025-11-04
CN117321769A (zh) 2023-12-29
GB202409833D0 (en) 2024-08-21

Similar Documents

Publication Publication Date Title
US7902512B1 (en) Coplanar high fill factor pixel architecture
CN103283024B (zh) 高电荷容量像素架构、辐射图像摄像系统及其方法
EP2869338B1 (en) Esd protecting system and x ray flat plate detector
US11275185B2 (en) Ray detector and ray detection panel
CN106535768B (zh) 用于数字成像系统中的辐射检测的装置
JP2025513151A (ja) 光電検出器及び電子デバイス
US11094737B2 (en) Flat panel detector
KR101318052B1 (ko) 엑스레이 검출용 포토다이오드 및 이의 제조방법
US10468450B2 (en) Apparatus for radiation detection in a radiography imaging system
US7804071B2 (en) Image detection device
JP2009087960A (ja) センサパネル及び画像検出装置
KR102670831B1 (ko) 광차단층을 구비한 디지털 엑스레이 검출장치 및 그 제조방법
CN110660816A (zh) 一种平板探测器
KR20180044681A (ko) 검출효율이 향상된 디지털 엑스레이 검출장치 및 그 제조방법
US8779377B2 (en) Image pickup unit and image pickup display system
JP3436196B2 (ja) ２次元アレイ型検出装置
KR20180044678A (ko) 디지털 엑스레이 검출장치
KR102619971B1 (ko) 디지털 엑스레이 검출장치 및 그 제조방법
KR102720980B1 (ko) 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판과 이를 포함하는엑스레이 검출기
US20250113632A1 (en) Detector substrate and flat panel detector
KR20180044679A (ko) 필팩터가 향상된 디지털 엑스레이 검출장치
CN120380863A (zh) 一种探测基板及平板探测器
WO2026016667A1 (zh) 光电转换基板和平板检测装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250421

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260428