GB2629531A - Photoelectric detector and electronic device - Google Patents
Photoelectric detector and electronic device Download PDFInfo
- Publication number
- GB2629531A GB2629531A GB2410422.6A GB202410422A GB2629531A GB 2629531 A GB2629531 A GB 2629531A GB 202410422 A GB202410422 A GB 202410422A GB 2629531 A GB2629531 A GB 2629531A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- signal line
- bias signal
- photoelectric detector
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 57
- 238000003860 storage Methods 0.000 claims abstract description 56
- 239000010409 thin film Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000002093 peripheral effect Effects 0.000 claims abstract description 19
- 238000009413 insulation Methods 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000000903 blocking effect Effects 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 106
- 239000002184 metal Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000005251 gamma ray Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T7/00—Details of radiation-measuring instruments
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
- H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2022/089699 WO2023206185A1 (zh) | 2022-04-28 | 2022-04-28 | 光电探测器及电子设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB202410422D0 GB202410422D0 (en) | 2024-08-28 |
| GB2629531A true GB2629531A (en) | 2024-10-30 |
Family
ID=88516729
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2410422.6A Pending GB2629531A (en) | 2022-04-28 | 2022-04-28 | Photoelectric detector and electronic device |
| GB2409833.7A Pending GB2629699A (en) | 2022-04-28 | 2023-04-27 | Detection substrate and flat panel detector |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2409833.7A Pending GB2629699A (en) | 2022-04-28 | 2023-04-27 | Detection substrate and flat panel detector |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12461254B2 (https=) |
| JP (2) | JP2025513151A (https=) |
| CN (2) | CN117321769A (https=) |
| GB (2) | GB2629531A (https=) |
| WO (2) | WO2023206185A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115704784A (zh) * | 2021-08-05 | 2023-02-17 | 北京京东方传感技术有限公司 | 平板探测器和检测装置 |
| CN118039661A (zh) * | 2024-02-21 | 2024-05-14 | 北京京东方传感技术有限公司 | 探测面板、制备探测面板的方法和平板探测器 |
| US12557423B2 (en) * | 2024-07-18 | 2026-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image-sensor structure and method of making thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0523784A1 (en) * | 1991-07-15 | 1993-01-20 | Philips Electronics Uk Limited | An image detector and a method of manufacturing such an image detector |
| US6185274B1 (en) * | 1998-03-20 | 2001-02-06 | Kabushiki Kaisha Toshiba | Image detecting device and an X-ray imaging system |
| CN101166998A (zh) * | 2005-04-27 | 2008-04-23 | 皇家飞利浦电子股份有限公司 | 数字平面x射线探测器 |
| CN106169484A (zh) * | 2016-08-18 | 2016-11-30 | 上海箩箕技术有限公司 | 自发光显示阵列基板及其使用方法 |
| KR101843284B1 (ko) * | 2016-09-30 | 2018-03-28 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출장치 및 그 제조방법 |
| CN108476294A (zh) * | 2016-01-06 | 2018-08-31 | 东芝电子管器件株式会社 | 放射线检测器 |
| CN113406832A (zh) * | 2021-06-24 | 2021-09-17 | 昆山龙腾光电股份有限公司 | Tft阵列基板及其驱动方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4118154A1 (de) * | 1991-06-03 | 1992-12-10 | Philips Patentverwaltung | Anordnung mit einer sensormatrix und einer ruecksetzanordnung |
| JP3683463B2 (ja) | 1999-03-11 | 2005-08-17 | シャープ株式会社 | アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ |
| US20040246355A1 (en) | 2003-06-06 | 2004-12-09 | Ji Ung Lee | Storage capacitor array for a solid state radiation imager |
| CN100505284C (zh) | 2004-06-18 | 2009-06-24 | 皇家飞利浦电子股份有限公司 | X射线图像检测器 |
| JP2006208753A (ja) | 2005-01-28 | 2006-08-10 | Seiko Epson Corp | 液晶装置及び電子機器 |
| JP2009267343A (ja) | 2008-10-29 | 2009-11-12 | Epson Imaging Devices Corp | 固体撮像装置およびその製造方法 |
| US8791419B2 (en) | 2010-12-15 | 2014-07-29 | Carestream Health, Inc. | High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same |
| CN102157533B (zh) | 2011-01-18 | 2013-07-17 | 江苏康众数字医疗设备有限公司 | 具有存储电容结构的非晶硅图像传感器 |
| CN102306653A (zh) | 2011-06-09 | 2012-01-04 | 上海奕瑞光电子科技有限公司 | 一种平板x射线探测器 |
| CN103904086B (zh) | 2012-12-24 | 2017-10-27 | 上海天马微电子有限公司 | 一种薄膜晶体管阵列基板 |
| KR102315094B1 (ko) | 2014-11-13 | 2021-10-20 | 엘지디스플레이 주식회사 | 고 개구율 유기발광 다이오드 표시장치 및 그 제조방법 |
| CN109830563B (zh) | 2019-02-26 | 2022-07-19 | 京东方科技集团股份有限公司 | 探测面板及其制作方法 |
| CN110416278B (zh) | 2019-08-06 | 2022-09-27 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
| CN110854147B (zh) | 2019-11-19 | 2022-04-22 | 京东方科技集团股份有限公司 | 一种探测基板及其制作方法 |
| JP7483359B2 (ja) | 2019-12-04 | 2024-05-15 | 株式会社ジャパンディスプレイ | 半導体装置 |
| CN111653581B (zh) | 2020-06-17 | 2023-12-01 | 京东方科技集团股份有限公司 | 探测基板及射线探测器 |
| CN115117099B (zh) | 2021-03-17 | 2026-01-23 | 京东方科技集团股份有限公司 | 探测基板、其制作方法及平板探测器 |
-
2022
- 2022-04-28 US US18/025,200 patent/US12461254B2/en active Active
- 2022-04-28 WO PCT/CN2022/089699 patent/WO2023206185A1/zh not_active Ceased
- 2022-04-28 GB GB2410422.6A patent/GB2629531A/en active Pending
- 2022-04-28 CN CN202280001019.0A patent/CN117321769A/zh active Pending
- 2022-04-28 JP JP2024542354A patent/JP2025513151A/ja active Pending
-
2023
- 2023-04-27 JP JP2024543876A patent/JP2025512221A/ja active Pending
- 2023-04-27 CN CN202380008846.7A patent/CN117321782A/zh active Pending
- 2023-04-27 WO PCT/CN2023/091353 patent/WO2023208149A1/zh not_active Ceased
- 2023-04-27 GB GB2409833.7A patent/GB2629699A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0523784A1 (en) * | 1991-07-15 | 1993-01-20 | Philips Electronics Uk Limited | An image detector and a method of manufacturing such an image detector |
| US6185274B1 (en) * | 1998-03-20 | 2001-02-06 | Kabushiki Kaisha Toshiba | Image detecting device and an X-ray imaging system |
| CN101166998A (zh) * | 2005-04-27 | 2008-04-23 | 皇家飞利浦电子股份有限公司 | 数字平面x射线探测器 |
| CN108476294A (zh) * | 2016-01-06 | 2018-08-31 | 东芝电子管器件株式会社 | 放射线检测器 |
| CN106169484A (zh) * | 2016-08-18 | 2016-11-30 | 上海箩箕技术有限公司 | 自发光显示阵列基板及其使用方法 |
| KR101843284B1 (ko) * | 2016-09-30 | 2018-03-28 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출장치 및 그 제조방법 |
| CN113406832A (zh) * | 2021-06-24 | 2021-09-17 | 昆山龙腾光电股份有限公司 | Tft阵列基板及其驱动方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117321782A (zh) | 2023-12-29 |
| WO2023208149A9 (zh) | 2023-11-30 |
| GB2629699A (en) | 2024-11-06 |
| US20240302543A1 (en) | 2024-09-12 |
| WO2023208149A1 (zh) | 2023-11-02 |
| WO2023206185A1 (zh) | 2023-11-02 |
| JP2025512221A (ja) | 2025-04-17 |
| GB202410422D0 (en) | 2024-08-28 |
| US12461254B2 (en) | 2025-11-04 |
| JP2025513151A (ja) | 2025-04-24 |
| CN117321769A (zh) | 2023-12-29 |
| GB202409833D0 (en) | 2024-08-21 |
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