JP2024544194A - タングステン化学機械研磨スラリー - Google Patents
タングステン化学機械研磨スラリー Download PDFInfo
- Publication number
- JP2024544194A JP2024544194A JP2024532741A JP2024532741A JP2024544194A JP 2024544194 A JP2024544194 A JP 2024544194A JP 2024532741 A JP2024532741 A JP 2024532741A JP 2024532741 A JP2024532741 A JP 2024532741A JP 2024544194 A JP2024544194 A JP 2024544194A
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- polishing
- tungsten
- acid
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163264801P | 2021-12-02 | 2021-12-02 | |
| US63/264,801 | 2021-12-02 | ||
| PCT/US2022/080603 WO2023102392A1 (en) | 2021-12-02 | 2022-11-29 | Tungsten chemical mechanical polishing slurries |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024544194A true JP2024544194A (ja) | 2024-11-28 |
| JP2024544194A5 JP2024544194A5 (https=) | 2024-12-13 |
Family
ID=86613087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024532741A Pending JP2024544194A (ja) | 2021-12-02 | 2022-11-29 | タングステン化学機械研磨スラリー |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250019568A1 (https=) |
| EP (1) | EP4441158A4 (https=) |
| JP (1) | JP2024544194A (https=) |
| KR (1) | KR20240113825A (https=) |
| CN (1) | CN118510855A (https=) |
| TW (1) | TW202338026A (https=) |
| WO (1) | WO2023102392A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20250107435A (ko) * | 2024-01-05 | 2025-07-14 | 삼성에스디아이 주식회사 | 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐의 연마 방법 |
| CN118422206B (zh) * | 2024-04-02 | 2025-02-07 | 深圳前海榕达创途化工科技股份有限公司 | 一种用于铜面退锡的护铜剂以及实现尾水全循环回用的工艺 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200714696A (en) * | 2005-08-05 | 2007-04-16 | Advanced Tech Materials | High throughput chemical mechanical polishing composition for metal film planarization |
| CN102766407B (zh) * | 2008-04-23 | 2016-04-27 | 日立化成株式会社 | 研磨剂及使用该研磨剂的基板研磨方法 |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US11339308B2 (en) * | 2016-03-01 | 2022-05-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| US10815392B2 (en) * | 2018-05-03 | 2020-10-27 | Rohm and Haas Electronic CMP Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| US11111435B2 (en) * | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
| TWI785550B (zh) * | 2020-03-31 | 2022-12-01 | 美商Cmc材料股份有限公司 | 含新穎磨料之cmp組合物及方法 |
-
2022
- 2022-11-29 WO PCT/US2022/080603 patent/WO2023102392A1/en not_active Ceased
- 2022-11-29 EP EP22902344.5A patent/EP4441158A4/en active Pending
- 2022-11-29 JP JP2024532741A patent/JP2024544194A/ja active Pending
- 2022-11-29 CN CN202280088361.9A patent/CN118510855A/zh active Pending
- 2022-11-29 KR KR1020247021487A patent/KR20240113825A/ko active Pending
- 2022-11-29 US US18/713,260 patent/US20250019568A1/en active Pending
- 2022-11-30 TW TW111145989A patent/TW202338026A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202338026A (zh) | 2023-10-01 |
| US20250019568A1 (en) | 2025-01-16 |
| CN118510855A (zh) | 2024-08-16 |
| EP4441158A4 (en) | 2025-11-12 |
| WO2023102392A1 (en) | 2023-06-08 |
| KR20240113825A (ko) | 2024-07-23 |
| EP4441158A1 (en) | 2024-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6940557B2 (ja) | 酸化物エロージョン低減のためのタングステン化学機械研磨 | |
| TWI597356B (zh) | 於鎢化學機械硏磨降低淺盤效應 | |
| CN110776829B (zh) | 具有低凹陷和低侵蚀形貌的钨化学机械平面化(cmp) | |
| JP2008512871A (ja) | メタレート変性シリカ粒子を含有する水性スラリー | |
| JPWO2008132983A1 (ja) | 研磨剤組成物および半導体集積回路装置の製造方法 | |
| JP2024544194A (ja) | タングステン化学機械研磨スラリー | |
| JP2025061943A (ja) | 研磨用組成物、その製造方法、研磨方法および半導体基板の製造方法 | |
| JP6936316B2 (ja) | タングステンのための化学機械研磨法 | |
| JP7697781B2 (ja) | 研磨用組成物、その製造方法、研磨方法および半導体基板の製造方法 | |
| KR20220123295A (ko) | 유도체화된 폴리아미노산 | |
| JP4231950B2 (ja) | 金属膜用研磨剤 | |
| JP2025077018A (ja) | 半導体工程用研磨組成物及びこれを用いた基板の製造方法 | |
| HK1028843A (en) | A polishing composition including an inhibitor of tungsten etching |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240801 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241205 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250925 |