JP2024543081A5 - - Google Patents

Info

Publication number
JP2024543081A5
JP2024543081A5 JP2024529232A JP2024529232A JP2024543081A5 JP 2024543081 A5 JP2024543081 A5 JP 2024543081A5 JP 2024529232 A JP2024529232 A JP 2024529232A JP 2024529232 A JP2024529232 A JP 2024529232A JP 2024543081 A5 JP2024543081 A5 JP 2024543081A5
Authority
JP
Japan
Prior art keywords
recess
stacked
stack
pad
structure according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024529232A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024543081A (ja
Filing date
Publication date
Priority claimed from US17/455,576 external-priority patent/US12230552B2/en
Application filed filed Critical
Publication of JP2024543081A publication Critical patent/JP2024543081A/ja
Publication of JP2024543081A5 publication Critical patent/JP2024543081A5/ja
Pending legal-status Critical Current

Links

JP2024529232A 2021-11-18 2022-10-25 パッドレススタックビアのための凹部構造体 Pending JP2024543081A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/455,576 2021-11-18
US17/455,576 US12230552B2 (en) 2021-11-18 2021-11-18 Recess structure for padless stack via
PCT/US2022/078641 WO2023091846A1 (en) 2021-11-18 2022-10-25 Recess structure for padless stack via

Publications (2)

Publication Number Publication Date
JP2024543081A JP2024543081A (ja) 2024-11-19
JP2024543081A5 true JP2024543081A5 (https=) 2025-10-27

Family

ID=84389276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024529232A Pending JP2024543081A (ja) 2021-11-18 2022-10-25 パッドレススタックビアのための凹部構造体

Country Status (7)

Country Link
US (1) US12230552B2 (https=)
EP (1) EP4434083A1 (https=)
JP (1) JP2024543081A (https=)
KR (1) KR20240101566A (https=)
CN (1) CN118215994A (https=)
TW (1) TW202339155A (https=)
WO (1) WO2023091846A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12198977B2 (en) * 2022-05-24 2025-01-14 Nanya Technology Corporation Manufacturing method of semiconductor structure having elastic member within via
US20250248034A1 (en) * 2024-01-29 2025-07-31 Sandisk Technologies Llc Three-dimensional memory device with a staircase isolation ridge and methods of forming the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6689985B2 (en) * 2001-01-17 2004-02-10 Orbotech, Ltd. Laser drill for use in electrical circuit fabrication
JP2007042662A (ja) 2003-10-20 2007-02-15 Renesas Technology Corp 半導体装置
JP5014632B2 (ja) 2006-01-13 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR101412225B1 (ko) * 2012-08-10 2014-06-25 이비덴 가부시키가이샤 배선판 및 그 제조 방법
US9281242B2 (en) * 2012-10-25 2016-03-08 Nanya Technology Corp. Through silicon via stacked structure and a method of manufacturing the same
US9627318B2 (en) 2014-06-16 2017-04-18 Taiwan Semiconductor Manufacturing Company Ltd. Interconnect structure with footing region
US10325855B2 (en) 2016-03-18 2019-06-18 Qualcomm Incorporated Backside drill embedded die substrate
KR102681797B1 (ko) 2018-12-04 2024-07-03 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
US11362035B2 (en) 2020-03-10 2022-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Diffusion barrier layer for conductive via to decrease contact resistance

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